• Journal of Applied Reliability
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• v.6 no.2
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• pp.135-150
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• 2006

Rubber material properties and lifetime evaluation are very important in design procedure to assure the safety and reliability of the rubber components. This paper discusses the failure mechanism and material tests were carried out to predict the useful lifetime of NBR and EPDM for compression motor, which is used in refrigerator component. The heat-aging process leads not only to mechanical properties change but also to chemical structure change so called degradation. In order to investigate the aging effects on the material properties, the accelerated test were carried out. The stress-strain curves were plotted from the results of the tensile test for virgin and heat-aged rubber specimens. The rubber specimens were heat-aged in an oven at the temperature ranging from $70^{\circ}C\;to\;100^{\circ}C$ for a period ranging from 1 to 180 days. Compression set results changes as the threshold are used for assessment of the useful life and time to threshold value were plotted against reciprocal of absolute temperature to give the Arrhenius plot. By using the compression set test, several useful lifetime prediction equations for rubber material were proposed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.366-370
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• 2019

In this paper, a single N+ emitter trench gate-type insulated gate bipolar transistor (IGBT) device was studied using T-CAD, in order to achieve a low on-state voltage drop (Vce-sat) and high breakdown voltage, which would reduce power loss and device reliability. Using the simulation, the threshold voltage, breakdown voltage, and on-state voltage drop were studied as a function of the temperature, the length of time in the diffusion process (drive-in) after implant, and the trench gate depth. During the drive-in process, a $20^{\circ}C$ change in temperature from 1,000 to $1,160^{\circ}C$ over a 150 minute time frame resulted in a 1 to 4 V change in the threshold voltage and a 24 to 2.6 V change in the on-state voltage drop. As a result, a 0.5 um change in the trench depth of 3.5 to 7.5 um resulted in the breakdown voltage decreasing from 802 to 692 V.

• Journal of Environmental Science International
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• v.30 no.1
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• pp.45-55
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• 2021

In this study, the odor of the parts and the odor of the surrounding environment were classified and verified. In order to increase the reliability of odor quantitative/qualitative analysis, the selection criteria for 5 sensory evaluators were established, and the n-Butanol control solution for each odor intensity was periodically trained to recognize the odor intensity before sensory evaluation. In addition, although various odor thresholds have been used through several studies, verification of whether the odor intensity value obtained through GC/MSD analysis is similar to the degree to which a person directly smells and feels it. It is important to select the odor threshold that has the best correlation with the odor intensity calculated by the person smelling the odor. Finally, sampling and measuring flowing airflow and temporary odors such as odor component analysis was experimentally difficult due to limited collection space and differences in concentration of generated components. In this study, a quantitative analysis was made possible by using the low temperature concentration (cooling) trap method. Through this, it was confirmed that the correlation with the actual odor intensity was not caused by the product itself, but by the environmental factor discharged from the product after creating the odor environment.

• Current Optics and Photonics
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• v.7 no.6
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• pp.714-720
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• 2023

Laser cleaning has the advantages of environmental protection, precision, and high efficiency, and has good prospects for application in removing oxide films on the surface of aluminum alloy. This paper discusses the cleaning threshold and cleaning mechanism of aluminum alloy surface oxide film. A nanosecond pulsed laser was used to remove a 5-㎛-thick oxide film from the surface of 7A04 aluminum alloy, and the target surface temperature and cleaning depth were simulated. The effects of different laser energy densities on the surface morphology of the aluminum alloy were analyzed, and the plasma motion process was recorded using a high-speed camera. The temperature measurement results of the experiment are close to the simulation results. The results show that the laser cleaning of aluminum alloy oxide film is mainly based on the vaporization mechanism and the shock wave generated by the explosion.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.2
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• pp.8-14
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• 1968

A linear current-pulse discriminator consisting: of a transistor monostable multivibrator and a Si tunnel diode is described. The input currant pulse range is about 50$\mu$A~5.23mA. The measured maximum linearity deviation is $\pm$0.75% in the input current pulse range mentioned above. The pulse resolving ability of the discriminator measured depends upon the bias current through the T, D. ; and, under the reverse bias current of 3mA, the resolving time is 2rs if allow the excess pulse amplitude of 5%. The threshold stability of the discriminator depends mainly upon the stability of the peak current Ip of the T. D. ; and, under the ambient temperature variation from $0^{\circ}C$ to 5$0^{\circ}C$, no bigger threshold variation than the maximum linearity deviation, i. e. $\pm$ 0.75%, was observed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.163-168
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• 2014

Bottom gate thin-film transistors were fabricated using solution processed IGZO channel layers with various gallium composition ratios that were annealed on a hot plate. Increasing the gallium ratio from 0.1 to 0.6 induced a threshold voltage shift in the electrical characteristics, whereas the molar ratio of In:Zn was fixed to 1:1. Among the devices, the IGZO-TFTs with gallium ratios of 0.4 and 0.5 exhibited suitable switching characteristics with low off-current and low SS values. The IGZO-TFTs prepared from IGZO films with a gallium ratio of 0.4 showed a mobility, on/off current ratio, threshold voltage, and subthreshold swing value of $0.1135cm^2/V{\cdot}s$, ${\sim}10^6$, 0.8 V, and 0.69 V/dec, respectively. IGZO-TFTs annealed at $300^{\circ}C$, $350^{\circ}C$, and $400^{\circ}C$ were also fabricated. Annealing at lower temperatures induced a positive shift in the threshold voltage and produced inferior electrical properties.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.3
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• pp.158-166
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• 2001

Based on uniform hot carrier injection (optically assisted electron injection) across the $Si-SiO_2$ interface into the gate insulator of n-channel IGFETs, the threshold voltage shifts associated with electron injection of $1.25{\times}l0^{16}{\;}e/\textrm{cm}^2 between 0.5 and 7 MV/cm were found to decrease from positive to negative values, indicating both a decrease in trap cross section ($E_{ox}{\geq}1.5 MV/cm$) and the generation of FPC $E_{ox}{\geq}5{\;}MV/cm$). It was also found that FNC and large cross section NETs were generated for $E_{ox}{\geq}5{\;}MV/cm$. Continuous, uniform low-field (1MV/cm) electron injection up to $l0^{19}{\;}e/\textrm{cm}^2 is accompanied by a monatomic increase in threshold voltage. It was found that the data could be modeled more effectively by assuming that most of the threshold voltage shift could be ascribed to generated bulk defects which are generated and filled, or more likely, generated in a charged state. The injection method and conditions used in terms of injection fluence, injection density, and temperature, can have a dramatic impact on what is measured, and may have important implications on accelerated lifetime measurements.

• Progress in Superconductivity and Cryogenics
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• v.11 no.3
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• pp.20-25
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• 2009

The quench detection system of the KSTAR (Korea Superconducting Tokamak Advanced Research) primarily uses the resistive voltage measurement due to a quench. This method is to detect the resistive voltage generated by a quench, which is continuously maintained above the preset voltage threshold for a given holding time. As the KSTAR PF (Poloidal Field) coils are operated in the pulse current mode, the large inductive voltages are generated. Therefore the voltage threshold and the quench holding time should be determined by considering both the inductive voltages measured during the operation, and the maximum conductor temperature rise through the quench analysis. In this paper, the compensation methods for minimizing the inductive voltages are presented for the KSTAR PF coils. The quench hot spot analysis of the PF coils was carried out by the analytical and numerical methods for determining the proper values of the quench voltage threshold and the allowable quench protection delay time.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2001.11a
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• pp.65-70
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• 2001

In this study, CT specimens were prepared from spring steel(SUP9) processed shot peening which was room temperature, low temperature and high temperature experiment. And we got the following characteristics from fatigue crack growth test carried out in the environment of room, low temperature and high temperature at $25^{\circ}C$, -3$0^{\circ}C$, -5$0^{\circ}C$, -7$0^{\circ}C$, -10$0^{\circ}C$ and 5$0^{\circ}C$, 10$0^{\circ}C$ , 15$0^{\circ}C$, 18$0^{\circ}C$ and in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range $\DeltaK_{th}$ in the early stage of fatigue crack growth (Region I ) and stress intensity factor range ΔK in the stable of fatigue crack growth (Region II) was decreased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature and high temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• Korean journal of applied entomology
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• v.43 no.2
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• pp.111-116
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• 2004

The development of Aphis gossypii was studied at various constant temperatures ranging from 15 to 35$^{\circ}C$, with 60-70％ RH, and photoperiod of 16：8 (L：D h). Mortality of A. gossypii was high in the early developmental stages, and at high temperatures. The total immature developmental period ranged from 4.6 to 11.5 days. The lower developmental threshold temperature and effective cumulated temperature for all immature stages were 5.0$^{\circ}C$ and 106.8 degree-day, respective. The nonlinear shape of temperature-dependent development was well described by the modified Sharpe and DeMichele model. The normalized cumulative frequency distributions of developmental period for each life stage were fitted to the three-parameter Weibull function.