• Transactions on Electrical and Electronic Materials
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• 제1권4호
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• pp.20-24
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• 2000

This study aimed to develop ITO(Indium Tim Oxide) tin films ablation with a pulsed type KrF excimer laser required for the electrode patterning application in flat panel display into small geometry on a large substrate are. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/㎠. And its value is much smaller than that using 3 .sup rd/ harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the ablated ITO is changed into dark brown due to increase of surface roughness and transformation of chemical composition by the laser light. The laser-irradiated regions were all found to be electrically isolating from the original surroundings. The XPS analysis showed that the relative surface concentration of Sn and In was essentially unchanged (In:Sn=5:1)after irradiating the KrF excimer laser. Using Al foil made by 2$\^$nd/ harmonic Na:YAG laser, the various ITO patterning is carried out.

• Journal of Photoscience
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• 제11권3호
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• pp.89-94
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• 2004

Motile cyanobacterium Synechocystis sp. PCC 6803 cells show photomovement with respect to the light stimulus. Under lateral irradiation, Synechocystis displays a phototactic gliding movement toward the light source by a twodimensional random biased walk. Under vertical irradiation, Synechocystis decreased the frequency of mean vectorial gliding speed dependent on the applied fluence rate, whereas the deviation distribution width of the speed increased. This strongly suggests the involvement of photokinesis. Evidence for the cyanobacterial photokinesis was discussed in the previous report (Choi et al., 1999. Photochem. Photobiol. 70, 95-102) demonstrating that the gross scalar speed of vertically irradiating cells increased by about 50% compared with that of dark-adapted cells. In the visible wavelength range, Synechocystis cells showed a maximal photokinetic activity at 420 nm and a second maximal activity at 680 nm. The threshold action spectrum for the photokinesis resembles the absorption spectrum of chlorophyll with major differences in the phototaxis action spectrum at 560 nm and 660 nm. We postulate that the cyanobacterial photokinesis is powered by the energy-generating chlorophyll pigments.

• 전기학회논문지
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• 제66권9호
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• pp.1351-1358
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• 2017

In this work, we investigated radiation hardness of GaN-based transistors which are strong candidates for next-generation power electronics. Field effect transistors with three types of gate structures including metal Schottky gate, recessed gate, and p-AlGaN layer gate were fabricated on AlGaN/GaN heterostructure on Si substrate. The devices were irradiated with energetic protons and alpha-particles. The irradiated transistors exhibited the reduction of on-current and the shift of threshold voltage which were attributed to displacement damage by incident energetic particles at high fluence. However, FET operation was still maintained and leakage characteristics were not degraded, suggesting that GaN-based FETs possess high potential for radiation-hardened electronics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.886-888
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• 1998

By irradiating photoresist on Si or glass with $Ar^+$ (${\lambda}$=514 nm, CW) and Nd:YAG (${\lambda}$=266 and 532nm, pulse) laser beam, the photoresist was etched masklessly in air. Using a fourth harmonic Nd:YAG laser beam, the etching threshold of energy fluence was $25\;J/cm^2$ and the damage of substrate was appeared over $40\;J/cm^2$.

• Journal of Photoscience
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• 제6권3호
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• pp.103-108
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• 1999

We present recent results on ablation mechanism, single-pulse laser micropatterning , pulsed-laser deposition(PLD) and particulates formation accompanying laser ablation, with special emplasis on polymers, in particular polymide, (PI), and polytetrafluoroethylene, (PTFE). Ablation of polymers is described on the basis of photothermal bond breaking within the bulk material. Here, we assume a first order chemical reaction, which can be described by an Arrhenius law. Ablation starts when the density of broken bonds at the surface reaches a certain critical value. Single-pulse laser ablation of polyimide shows a clear-length dependence of the threshold fluence. This experimental result strongly supports a thermal ablation model. We discuss the various possibilities and drawbacks of PLD and describe the morphology, physical properties and applications of PTFE films.

• Bulletin of the Korean Chemical Society
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• 제5권5호
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• pp.194-198
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• 1984

The UV action spectra and quantum yields for photodestruction of tryptophan (Trp) in peptide such as N-acetylphenylalanyl-L-tryptophan (NAPT) and 3-methyl indole (scatole) were determined in aerated aqueous and organic solvents. The photodestruction of aqueous NAPT was shown to be initiated by photoionization without requirement of threshold energy, as demonstrated by the similarity of fluence effect curves obtained for the action at various wavelengths and the wavelength dependence of quantum yield comparable to that reported for the photoionization of L-Trp. N-formylkynurenine (NFK)-type photoproduct, which is a photodynamic sensitizer, was not found to be involved in the photodestruction of Trp in NAPT in aqueous solution. In contrast, the action spectra of NAPT and scatole in organic solvents have revealed evidences for the significant role of internal photosensitization by NFK-type photoproduct in photolysis of Trp in peptide.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.80-80
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• 1999

플라즈마 디스플레이 패널(PDP)의 공정을 간단히 하기 위하여 포토레지스트, ITO, 격벽재료를 Ar+ laser(λ-514 nm, CW)와 Nd:YAG laser(λ=532, 266nm, pulse)로 직접 패터닝 하였다. 레이저에 의한 포토레지스트의 패턴결과, 아르곤 이온 레이저의 포토레지스트 가공의 반응 메카니즘은 레이저 빔의 열에 의한 시료 표면의 국부적인 온도상승에 의한 용융작용이며, 그 결과 식각 후 형성된 패턴의 단면 모양도 레이저빔의 profile과 같은 가우시안 형태를 나타낸다. Nd:YAG 레이저의 4고조파(532nm)를 이용한 경우 200$\mu\textrm{m}$/sce의 주사속도에서 포토레지스트를 패턴하기 위한 임계에너지(threshold energy fluence) 값은 25J/cm2이며, 약 40J/cm2의 에너지 밀도에서 하부기판의 손상이 발생하기 시작하였다. 글미 1은 Nd:YAG 레이저 4고조파를 이용하여 포토레지스트를 식각한 경우 SEM 표면사진(위)과 단차특정기에 의한 단면형상(아래)이다. ITO 막의 레이저에 의한 직접 패턴 결과, ITO 막은 레이저 펄스에 의한 급속 가열 및 증발에 의한 메커니즘으로 식각이 이루어지며, 레이저 파장에 따른 광흡수 정도의 차이에 의해 2고조파 (532nm)에서 ITO 막의 가공 품질이 4고조파(266nm)에 비해 우수하며 패턴의 폭도 출력에 따라 제어가 용이하였다. 그림 2는 Nd:YAG 레이저 2고조파를 이용하여 ITO를 식각한 경우 SEM표면 사진(위)과 단차측정기에 의한 단면형상(아래)이다. 격벽 재료의 레이저에 의한 직접 패턴 결과, Ar+ 레이저(514nm)는 출력 밀도 32NW/cm2에서 격벽을 유리 기판의 경계면까지 식각하였다. Nd:YAG 레이저(532nm)는 laser fluence가 6.5mJ/cm2에서 격벽을 식각하기 시작하였으며, 19.5J/cm2에서 유리기판의 rudraus(격벽 두께 130$\mu\textrm{m}$)까지 식각하였다.

• Corrosion Science and Technology
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• 제20권4호
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• pp.210-229
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• 2021

To safely operate domestic nuclear power plants approaching the end of their design life, the material degradation management strategy of the components is important. Among studies conducted to improve the soundness of nuclear reactor components, research methods for understanding the degradation of reactor internals and preparing management strategies were surveyed. Since the IGSCC (Intergranular Stress Corrosion Cracking) initiation and propagation process is associated with metal dissolution at the crack tip, crack initiation sensitivity was decreased in the hydrogenated water with decreased crack sensitivity but occurrence of small surface cracks increased. A stress of 50 to 55% of the yield strength of the irradiated materials was required to cause IASCC (Irradiation Assisted Stress Corrosion Cracking) failure at the end of the reactor operating life. In the threshold-stress analysis, IASCC cracks were not expected to occur until the end of life at a stress of less than 62% of the investigated yield strength, and the IASCC critical dose was determined to be 4 dpa (Displacement Per Atom). The stainless steel surface oxide was composed of an internal Cr-rich spinel oxide and an external Fe and Ni-rich oxide, regardless of the dose and applied strain level.

• Journal of Photoscience
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• 제10권1호
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• pp.97-104
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• 2003

The excitation wavelength dependence of laser ablation dynamics of an azobenzene-containing urethane-urea copolymer film was investigated by measuring the laser fluence dependence of etch depth, transient absorbance change at each excitation wavelength, and transient absorption spectra. Moreover expansion/contraction dynamics was studied by applying nanosecond time-resolved interferometry. The threshold was determined at several excitation wavelengths from etch depth measurement, while time-integrated absorbance was obtained under excitation conditions. The photon energy required to remove the topmost of surface layer of the film did not .depend on excitation wavelength, and the penetration depth of excitation pulse dominated the etch depth. When the excitation wavelength was longer than 500 nm, permanent swelling was clearly observed but not for shorter wavelength excitation. In the latter case, photoisomerization occurred during excitation and the following photoreduction may play an important role. On the basis of the observations made in this study, a photochemical and photothermal mechanisms can explain mostly the short and long wavelength excitation results, respectively.

• 한국연소학회지
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• 제1권1호
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• pp.75-82
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• 1996

Laser induced incandescence, LII, recently developed technique for measuring soot concentration in flames, can overcome most of limitations of conventional laser extinction measurement. In this study, experiments were performed to investigate the effect of laser intensity, detection wavelength, and also laser beam quality on both LII signal at a particular position and peak-to-centerline LII signal ratio. The results of LII signal with increasing laser intensity shows its near-independence of laser intensity once threshold level of laser intensity has been reached. However, this near-independence depends on laser beam quality and the incident optical setup. The peak-to-centerline LII signal ratio slowly but continuously increases with laser power. This fact is due to the dependence of LII signal on particle mean diameter. LII signal is attenuated during it passes through the flame containing soot particles. The attenuation rate is inversely proportional to detection wavelength. In this study, LII signal at 680 nm band is 10% greater than the signal at 400 nm band.