• The Transactions of the Korean Institute of Electrical Engineers A
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• v.54 no.7
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• pp.328-336
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• 2005

Power quality has become concern both utilities and their customers with wide spread use of electronic and power electronic equipment. The poor quality of electric power causes malfunctions, instabilities and shorter lifetime of the load. In power system operation, power system disturbances such as faults, overvoltage, capacitor switching transients, harmonic distortion and impulses affects power quality. For diagnosing power quality problem, the causes of the disturbances should be understood before appropriate actions can be taken. In this paper we present a new approach to detect, localize, and investigate the feasibility of classifying various types of power quality disturbances. This paper deals with the use of a multi-resolution analysis by a discrete wavelet transform to detect power system disturbances such as interruption, sag, swell, transients, etc. We also proposed do-noising and threshold technique to detect power system disturbances in a noisy environment. To find the better mother wavelet for detecting disturbances, we compared the performance of the disturbance detection with the several mother wavelets such as Daubechies, Symlets, Coiflets and Biorthogonals wavelets. In our analysis, we adopt db4 wavelet as mother wavelet because it shows better results for detecting several disturbances than other mother wavelets. To show the effectiveness of the proposed method, a various case studies are simulated for the example system which is constructed by using PSCAD/EMTDC. From the simulation results. proposed method detects time Points of the start and end time of the disturbances.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.154-154
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• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

• Journal of Institute of Control, Robotics and Systems
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• v.15 no.5
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• pp.457-464
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• 2009

The weak classifier of AdaBoost algorithm is a central classification element that uses a single criterion separating positive and negative learning candidates. Finding the best criterion to separate two feature distributions influences learning capacity of the algorithm. A common way to classify the distributions is to use the mean value of the features. However, positive and negative distributions of Haar-like feature as an image descriptor are hard to classify by a single threshold. The poor classification ability of the single threshold also increases the number of boosting operations, and finally results in a poor classifier. This paper proposes a weak classifier that uses multiple criterions by adding a probabilistic criterion of the positive candidate distribution with the conventional mean classifier: the positive distribution has low variation and the values are closer to the mean while the negative distribution has large variation and values are widely spread. The difference in the variance for the positive and negative distributions is used as an additional criterion. In the learning procedure, we use a new classifier that provides a better classifier between them by selective switching between the mean and standard deviation. We call this new type of combined classifier the "Mixed Weak Classifier". The proposed weak classifier is more robust than the mean classifier alone and decreases the number of boosting operations to be converged.

• Journal of IKEEE
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• v.14 no.2
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• pp.82-89
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• 2010

In this paper, a buck-boost converter using three DTMOS(Dynamic Threshold Voltage MOSFET) switching devices is presented. The efficiency of the proposed converter is higher than that of conventional buck-boost converter. DTMOS with low on-resistance is designed to decrease conduction loss. The threshold voltage of DTMOS drops as the gate voltage increases, resulting in a much higher current handling capability than standard MOSFET. In order to improve the power efficiency at the high current level, the proposed converter is controlled with PWM(pulse width modulation) method. The converter has maximum output current 300mA, input voltage 3.3V, output voltage from 700mV to 12V, 1.2MHz oscillation frequency, and maximum efficiency 90%. Moreover, the LDO(low drop-out) is designed to increase the converting efficiency at the standby mode below 1mA.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.7
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• pp.1489-1496
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• 2009

Amorphous indium-gallium-zinc-oxide thin-film-transistors (TFTs) were modeled successfully. Dependence of TFT characteristics on structure, thickness, and equilibrium electron-density of the active layer was studied. For mono-active-layer TFTs, a thinner active layer had higher field-effect mobility. Threshold voltage showed the smallest absolute value for the 20 nm active-layer. Subthreshold swing showed almost no dependence on active-layer thickness. For the double-active-layer case, better switching performances were obtained for TFTs with bottom active layers with higher equilibrium electron density. TFTs with thinner active layers had higher mobility. Threshold voltage shifted in the minus direction as a function of the increase in the thickness of the layer with higher equilibrium electron-density. Subthreshold swing showed almost no dependence on active-layer structure. These data will be useful in optimizing the structure, the thickness, and the doping ratio of the active layers of oxide-semiconductor TFTs.

• Current Optics and Photonics
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• v.7 no.6
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• pp.721-731
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• 2023

This paper studies various roughness parameters, besides waviness, texture, and nonlinear parameters of Bismarck brown Y (BBY)-doped Poly(methyl methacrylate) (PMMA) films based on the computed values of optical limiting (OL) threshold power and nonlinear refractive index. The films' morphology, grain size, and absorption spectra were investigated using atomic force microscopy in conjunction with ultraviolet-visible (UV-Vis) spectrophotometer. The particle size of the films ranged between 4.11-4.51 mm and polymer films showed good homogeneity and medium roughness, ranging from 1.11-4.58 mm. A polymer film's third-order nonlinear optical features were carried out using the Z-scan methodology. The measurements were obtained by a continuous wave produced from a solid-state laser with a 532 nm wavelength. According to the results, BBY has a nonlinear refractive index of 10^-6 cm²/W that is significantly negative and nonlinear. The optical limiting thresholds are roughly 10.29, 13.52, and 18.71 mW, respectively. The shift of nonlinear optical features with the film's concentration was found throughout the experiment Additionally, we found that the polymer samples have outstanding capabilities for restricting the amount of optical power that may be transmitted through them. We propose that these films have the potential to be used in a wide variety of optoelectronic applications, including optical photodetectors and optical switching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.186-186
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• 2009

Most liquid crystal display modes, including the twisted nematic (TN) $mode^1$, the in-plane switching (IPS) $mode^2$, the fringe field switching (FFS) $mode^3$, and the vertically aligned (VA) $mode^4$ are based on either a horizontal or a vertical alignment. However, for some applications, such as no-bias-bend (NBB) pi cell or bistable bend-splay display, an intermediate pretilt angle is essential$^5$. NBB pi cells have been a focus of interest because of their fast response time; however, the reliable control of the intermediate pretilt angle of liquid crystals that is required for the fabrication of NBB pi cells is challenging. The controllable pre-tilt angle of liquid crystals was investigated using a blend of horizontal and vertical polyimide prepared by a rubbing method. Various pretilt angles in the range from 0^{\circ}$ to 90^{\circ}$ were achieved as a function of the vertical polyimide content. We observed uniform liquid crystal alignment on the rubbing-treated blended polyimide layer. A NBB pi cell with an intermediate pretilt angle of 47.8^{\circ}$ was manufactured. This cell had no initial bias voltage and a low threshold voltage, which indicates that it has low power consumption. In addition, the response time of the NBB pi cell was rapid.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.3B
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• pp.72-84
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• 2005

Optical burst switching networks usually employ one-way reservation by sending a burst control packet with a specific offset time, before transmitting each data burst Same. Due to such a Property, burst-contentions occur when multiple bursts contend for the same wavelength in the same output link simultaneously in a node, leading to burst losses, eventually degrading the quality of service. Therefore, in this paper, we propose a dynamic routing algorithm using minimum local state information in order to decrease burst-contentions. In this proposed scheme, if burst loss rate exceeds a threshold value at a certain node, a new alternative routing path is chosen according to burst priority and location of burst generation, which enables the contending bursts to detour around the congested link. Moreover, for reducing the effect of sending bursts on the primary path due to the alternative path, we also apply a minimum path-cost based routing on link-cost concept. Our simulation results show that proposed scheme improves the network performance in terms of burst loss probability and throughput by comparing with conventional one.

• Journal of Broadcast Engineering
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• v.20 no.5
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• pp.748-755
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• 2015

In this paper, sharing based admission control scheme is suggested for both service differentiation and improvement of wavelength utilization efficiency in burst switching networks. To provide service differentiation and high wavelength utilization efficiency, some of the wavelengths on a output link are shared with all classes and the others are used for the highest class exclusively. Markov based analysis is applied to the suggested scheme for the performance analysis and the numerical results are derived. The results are: The performance of lower traffic is more improved by the more number of shared wavelengths in case that the higher traffic or lower traffic is arrived equally or that the input rate of lower traffic is low. Another result is that the sharing effect of wavelengths is a little bit lowered when lower traffic passes the threshold.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.307-307
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• 2014

정보화 시대로 접어들면서 동일한 공간에 더 많은 정보를 저장할 수 있고, 보다 빠른 동작이 가능한 비휘발성 메모리 소자에 대한 요구가 증가하고 있다. 하지만, 최근 비휘발성 메모리 소자 관련 연구보고에 따르면, 메모리 소자의 소형화 및 직접화 측면에서, 전하 저장을 기반으로 하는 기존의 Floating-Gate(FG) Flash 메모리는 20 nm 이하 공정에서 한계가 예측 되고 있다. 따라서, 이러한 FG Flash 메모리의 한계를 해결하기 위해, 기존에 FET 기반의 FG Flash 구조와 같은 3 terminal이 아닌, Diode와 같은 2 terminal로 동작이 가능한 ReRAM, PRAM, STT-MRAM, PoRAM 등 저항변화를 기반으로 하는 다양한 종류의 차세대 메모리 소자가 연구되고 있다. 그 중, 저항 변화 메모리(ReRAM)는 CMOS 공정 호환성, 3D 직접도, 낮은 소비전력과 빠른 동작 속도 등의 우수한 동작 특성을 가져 차세대 비휘발성 메모리로 주목을 받고 있다. 또한, 상하부 전극의 2 terminal 만으로 소자 구동이 가능하기 때문에 Passive Crossbar-Array(CBA)로 적용하여 플래시 메모리를 대체할 수 있는 유력한 차세대 메모리 소자이다. 하지만, 이를 현실화하기 위해서는 Passive CBA 구조에서 발생할 수 있는 Read Disturb 현상, 즉 Word-Line과 Bit-Line을 통해 선택된 소자를 제외하고 주변의 다른 소자를 통해 흐르는 Sneak Leakage Current(SLC)를 차단하여 소자의 메모리 State를 정확히 sensing하기 위한 연구가 선행 되어야 한다. 따라서, 현재 이러한 이슈를 해결하기 위해서, 많은 연구 그룹에서 Diodes, Threshold Switches와 같은 ReRAM에 Selector 소자를 추가하는 방법, 또는 Self-Rectifying 특성 및 CRS 특성을 보이는 ReRAM 구조를 제안 하여 SLC를 차단하고자 하는 연구가 시도 되고 있지만, 아직까지 기초연구 단계로서 아이디어에 대한 가능성 정도만 보고되고 있는 현실 이다. 이에 본 논문은 Passive CBA구조에서 발생하는 SLC를 해결하기 위한 새로운 아이디어로써, 본 연구 그룹에서 선행 연구로 확보된 안정적인 저항변화 물질인 SiN를 정류 특성을 가지는 n-Si/Ti 기반의 Schottky Diode와 결합함으로써 기존의 CBA 메모리의 Read 동작에서 발생하는 SLC를 차단 할 수 있는 1SD-1R 구조의 메모리 구조를 제작 하였으며, 본 연구 결과 기존에 문제가 되었던 SLC를 차단 할 수 있었다.