• Journal of Mechanical Science and Technology
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• 제19권4호
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• pp.985-992
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• 2005

Vehicle Stability Control (VSC) system prevents vehicle from spinning or drifting out mainly by braking intervention. Although a control threshold of conventional VSC is designed by vehicle characteristics and centered on average drivers, it can be a redundancy to expert drivers in critical driving conditions. In this study, a manual adaptation of VSC is investigated by changing the control threshold. A control threshold can be determined by phase plane analysis of side slip angle and angular velocity which is established with various vehicle speeds and steering angles. Since vehicle side slip angle is impossible to be obtained by commercially available sensors, a side slip angle is designed and evaluated with test results. By using the estimated value, phase plane analysis is applied to determine control threshold. To evaluate an effect of control threshold, we applied a 23-DOF vehicle nonlinear model with a vehicle planar motion model based sliding controller. Controller gains are tuned as the control threshold changed. A VSC with various control thresholds makes VSC more flexible with respect to individual driver characteristics.

• 말소리와 음성과학
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• 제5권1호
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• pp.63-69
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• 2013

This study attempted to investigate the characteristics of Phonation Threshold Pressure and Phonation Threshold Airflow of Patients who have Functional voice disorder. 50 subjects participated in study (32 subjects were patients who had functional voice disorders and 20 subjects were normal adults). The PAS (Phonatory aerodynamic system, model 6600, KAY electronics, Inc.) was used to measure the data and to do the analysis. Data from the Phonation Threshold Pressure was measured using voicing efficiency of the PAS protocol. Data from the Phonation Threshold Airflow was measured using Maximum Sustained Phonation of the PAS protocol. Those were used because of the ease of phonation. The results of this study showed that the differences in Phonation Threshold Pressure and Phonation Threshold Airflow between patients who had functional voice disorder and normal adults could be significant index. Patients who had functional voice disorder showed more higher figures than normal adults. These results suggest that Phonation Threshold Pressure and Phonation Threshold Airflow are very useful in diagnosing the voice disorder. The measured data also provided useful information for diagnosing patients with vocal fold diseases.

• Journal of information and communication convergence engineering
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• 제7권3호
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• pp.361-365
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• 2009

This paper has been presented the transport characteristics of FinFET using the analytical potential model based on the Poisson's equation in subthreshold and threshold region. The threshold voltage is the most important factor of device design since threshold voltage decides ON/OFF of transistor. We have investigated the variations of threshold voltage and drain induced barrier lowing according to the variation of geometry such as the length, width and thickness of channel. The analytical potential model derived from the three dimensional Poisson's equation has been used since the channel electrostatics under threshold and subthreshold region is governed by the Poisson's equation. The appropriate boundary conditions for source/drain and gates has been also used to solve analytically the three dimensional Poisson's equation. Since the model is validated by comparing with the three dimensional numerical simulation, the subthreshold current is derived from this potential model. The threshold voltage is obtained from calculating the front gate bias when the drain current is $10^{-6}A$.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.813-818
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• 1996

Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

• 한국자동차공학회논문집
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• 제13권5호
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• pp.195-201
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• 2005

In conventional Vehicle Stability Control (VSC) System, a control threshold is designed by average driver characteristics. Despite the stabilizing effort, VSC causes redundancy to an expert driver. An advanced VSC which has flexibility on its control property is proposed in this study. By using lateral velocity estimator, a control threshold is determined on side slip angle and angular velocity phase plane. Vehicle planar motion model based sliding controller is modified with respect to various control thresholds. The performance of the proposed VSC algorithm has been investigated by human-in-the-loop simulation using a vehicle simulator. The simulation results show that the control threshold has to be determined with respect to the driver steering characteristics. A VSC with variable control thresholds would provide an improvement compared to a VSC with a constant threshold.

• 한국산학기술학회논문지
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• 제7권3호
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• pp.398-403
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• 2006

본 논문에서는 컬러 디지털 영상에서의 특징점 추출을 위한 퍼지 임계치 설정기법을 제안한다. 이를 위하여 두 가지 종류의 퍼지 측정자를 사용하여 임계치를 계산하는 퍼지추론 시스템을 구성한다. 퍼지추론 시스템에 사용된 측정자들은 디지털 영상에서의 국부영역 밝기를 매우 잘 반영할 뿐만 아니라 특징점 추출 성능이 매우 우수함을 보여준다. 또한, 퍼지측정자로 사용되는 비선형 스케치 특징점 추출 필터의 특성을 도식적으로 해석하였고 특징점들의 특성이 반영된 퍼지추론 시스템을 설계하였다. 이와 같이 설계된 퍼지추론 시스템을 통해 디지털 영상에 포함된 특징점의 특성이 반영된 임계치를 선택하였다. 실험결과를 통해 제안된 퍼지 임계치 추론 방법이 매우 유용성을 증명할 수 있었다.

• Journal of information and communication convergence engineering
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• 제13권4호
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• pp.257-263
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• 2015

In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO₂ as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current-voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15-20 V at V_DS = -80 V.

• Journal of Electrical Engineering and information Science
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• 제2권3호
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• pp.132-138
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• 1997

Electrical characteristics of split-gate flash EEPROM with triple polysilicon is investigated in terms of effects of floating gate and offset gate. In order to search for t the effects of offset gate on programming characteristics, threshold voltage and drain current are studied with variation of control gate voltage. The programming process is believed to depend on vertical and horizontal electric field as well as offset gate length. The erase and program threshold voltage are found to be almost constant with variation of control gate voltage above 12V, while endurance test indicates degradation of program threshold voltage. With increase of offset gate length, program threshold voltage becomes smaller and the drain source voltage just after program under constant control gate voltage becomes higher.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2022년도 춘계학술대회
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• pp.560-561
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• 2022

본 논문은 Nanosheet FET(NSFET)와 FinFET의 소자 성능을 3차원 소자 시뮬레이션을 통하여 다양한 구조의 NSFET와 FinFET의 소자 시뮬레이션을 한다. NSFET와 FinFET의 전류-전압 특성을 시뮬레이션하였고, 그 전류-전압 특성으로부터 추출한 문턱전압, 문턱전압이하 기울기 등의 성능을 비교하였다. NSFET이 FinFET보다 전류-전압 특성에서 드레인 전류가 더 많이 흐르며 더 높은 문턱전압을 갖는다. 문턱전압이하 기울기는 NSFET와이 FinFET보다 더 가파른 기울기를 갖는다.

• Journal of information and communication convergence engineering
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• 제9권6호
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• pp.733-737
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• 2011

This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson's equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec, and threshold voltage roll-off small in short channel devices. These models are used to obtain the change of subthreshold swings and threshold voltage for DGMOSFET according to channel doping profiles. Also subthreshold swings and threshold voltages have been analyzed for device parameters such as channel length, channel thickness and channel doping profiles.