• 한국결정성장학회지
• /
• 제12권4호
• /
• pp.202-209
• /
• 2002

$CuInSe_2$ 단결정 박막은 수평 전기로에서 합성한 다결정을 증발원으로 하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연-GaAs(100))의 온도를 각각 $620^{\circ}C$, $410^{\circ}C$로 고정하여 단결정 박막을 성장하였다. 단결정 박막의 결정성은 광발광과 이중결정 X-선 요동곡선(DCRC)으로 연구하였다. $CuInSe_2$ 단결정 박막의 운반자 농도와 이동도는 van der Pauw 방법으로 측정되었다. 또한 $CuInSe_2$ 단결정 박막의 C축에 수직하게 빛을 쬐었을 때 측정되여진 단파장대의 광전류 봉우리 갈라짐으로부터 결정장 갈라짐 $\Delta$Cr과 스핀 궤도 갈라짐 $\Delta$So(spin orbit splitting) 값을 구하였다. 광발광 측정으로부터 고품질의 결정에서 볼 수 있는 free exciton($E_x$)와 매우 강한 세기의 중성 받게 bound exciton($A^{\circ}$, X) 피크가 관찰되었다. 이때 중성 받게 bound exciton의 반치폭과 결합 에너지는 각각 7meV와 5.9meV였다. 또한 Haynes nile에 의해 구한 불순물의 활성화 에너지는 59meV였다.

• 한국재료학회지
• /
• 제23권12호
• /
• pp.714-721
• /
• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• 대한두개안면성형외과학회지
• /
• 제20권6호
• /
• pp.347-353
• /
• 2019

Most orbital surgeons believe that it's difficult to restore the primary orbital wall to its previous position and that the orbital wall is so thin that cannot be firmly its primary position. Therefore, orbital wall fractures generally have been reconstructed by replacing the bony defect with a synthetic implant. Although synthetic implants have sufficient strength to maintain their shape and position in the orbital cavity, replacement surgery has some drawbacks due to the residual permanent implants. In previous studies, the author has reported an orbital wall restoring technique in which the primary orbital wall fragment was restored to its prior position through a combination of the transorbital and transantral approaches. Simple straight and curved elevators were introduced transnasally to restore the orbital wall and to maintain temporary extraorbital support in the maxillary and ethmoid sinus. A transconjunctival approach provided sufficient space for implant insertion, while the transnasal approach enabled restoration of the herniated soft tissue back into the orbit. Fracture defect was reduced by restoring the primary orbital wall fragment to its primary position, making it possible to use relatively small size implant, furthermore, extraorbital support from both sinuses decreased the incidence of implant displacement. The author could recreate a natural shape of the orbit with the patient's own orbital bone fragments with this dual approach and effectively restored the orbital volume and shape. This procedure has the advantages for retrieving the orbital contents and restoring the primary orbital wall to its prior position.

• Steel and Composite Structures
• /
• 제41권6호
• /
• pp.861-871
• /
• 2021

This study aims at investigating the hysteretic performance of a novel composite wall panel fabricated by infilling aerated concrete blocks into a novel light-steel frame used for low-rise residential buildings. The novel light-steel frame is consisted of two thin-wall rectangular hollow section columns and a truss-beam assembled using patented U-shape connectors. Two bare light-steel frames and two composite wall panels have been tested to failure under horizontal cyclic loading. Hysteretic curves, lateral resistance and stiffness of four specimens have been investigated and analyzed. Based on the testing results, it is found that the masonry infill can significantly increase the lateral resistance and stiffness of the novel light-steel frame, about 2.3~3 and 21.2~31.5 times, respectively. Failure mode of the light-steel frame is local yielding of the column. For the composite wall panel, firstly, masonry infill is crushed, subsequently, local yielding may occur at the column if loading continues. Hysteretic curve of the composite wall panel obtained is not plump, implying a poor energy dissipation capacity. However, the light-steel frame of the composite wall panel can dissipate more energy after the masonry infill is crushed. Therefore, the composite wall panel has a much higher energy dissipation capacity compared to the bare light-steel frame.

• 한국정밀공학회지
• /
• 제22권9호
• /
• pp.188-193
• /
• 2005

To provide the various machining materials with excellent quality and dimensional accuracy, high -speed machining is very useful tool as one of the most effective rapid manufacturing processes. However, high-speed machining is not suitable for microscale thin-walled structures because of the lack of the structure stiffness to resist the cutting force. A new method which is able to make a very thin-walled structure rapidly will be proposed in this paper. This method is composed two processes, high-speed machining and filling process. Strong workholding force comes out of the solidification of filling materials. Low-melting point metal alloys are used in order to minimize the thermal effect during phase change and to hold arbitrary shape thin-walled structures quickly during high-speed machining. To verify the usefulness of this method, we will show some applications, for examples thin -wall cylinders and hemispherical shells, and compare the experimental results to analyze the dimensional accuracy of typical parts of the structures.

• 소성∙가공
• /
• 제24권5호
• /
• pp.368-374
• /
• 2015

Hydroforming of a non-axisymmetric thin-walled tubular component with variable cross sections was analyzed. In order to solve the sealing problem which occurred due to the thin and non-axisymmetric shape, the use of a lead patch on the punch, which had been successful in hydroforming of thin tubes, was evaluated. A lead patch was attached to the punch to solve the sealing problem, which was caused by the stress gradient in the non-axisymmetric shape. FEM and experiments were also performed to analyze these sealing problems associated with the punch shape and non-axisymmetric shape. Finally, the lead patch was attached at tube surface where intensive local strain concentration would occur to enhance the hydroformability. These methods were successfully used to fabricate non-axisymmetric thin-walled tubular component with variable cross sections that had previously failed during traditional hydroforming.

• 한국강구조학회 논문집
• /
• 제16권6호통권73호
• /
• pp.781-792
• /
• 2004

스티프너가 없는 얇은 강판을 사용한 골조강판벽 시스템에 대한 실험연구를 실시하였다. 1경간 3층의 골조강판벽에 주기횡하중을 재하하였으며, 주요한 실험 변수는 강판의 두께, 기둥의 강도이다. 실험결과를 이용하여 강판벽의 강도, 변형능력, 에너지 소산능력을 연구하였으며, 이를 토대로 골조강판벽의 파괴메카니즘을 분석하였다. 실험결과, 얇은 강판을 사용하는 골조강판벽은, 높은 강도, 낮은 연성능력, 캔틸레버거동특성을 나타내는 일반적인 가새골조나 스티프너 보강된 강판벽과는 여러 면에서 다른 거동특성을 나타낸다. 골조강판벽에서는 강판의 조기국부좌굴과 인장응력장 작용이 발생하면서, 전 층에 고르게 항복변형이 분포된다. 이로 인하여 변형형태는 휨변형과 전단변형의 복합형태를 나타내며, 우수한 강도 및 에너지 소산능력과 연성모멘트 골조에 버금가는 변형능력을 나타내었다. 그러나 일반적인 가새골조와는 달리 보, 기둥 등의 골조부재는 강판의 인장응력장을 지지할 수 있도록 설계되어야 하며, 따라서 기둥의 강도가 작고 콤팩트 단면을 사용하지 않은 경우에는 약층현상이 발생하며 강도가 급격히 저하되었다. 얇은 강판을 사용하는 골조강판벽은 일반적인 가새골조나 스티프너 보강 강판벽과는 차별되는 우수한 변형능력을 갖고 있으므로 연성내진구조시스템으로 활용할 수 있다.

• 한국결정학회지
• /
• 제12권4호
• /
• pp.197-206
• /
• 2001

수평 전기로에서 AgInS₂ 다결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 AgInS₂ 단결정 박막을 반절연성 GaAs(100)기판에 성장시켰다. AgInS₂ 단결정 박막의 성장 조건은 증발원의 온도 680℃, 기판의 온도 410℃였고 성장 속도는 0.5㎛/hr였다. AgInS₂ 단결정 박막의 결정성의 조사에서 10 K에서 광발광(photoluminescence)스펙트럼이 597.8 nm(2.0741 eV)에서 exciton emission스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 박폭치(FWHM)도 121 arcsec로 가장 작아 최적 성장 조건임을 알수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 9.35×10/sup 16/㎤, 294㎠/V·s 였다. AgInS₂ /SI(SEmi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap E/sub g/(T)는 Varshni 공식에 따라 계산한 결과 2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K)이었으며 광전류 스펙트럼으로부터 Hamiltopn matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting Δcr값이 0.1541eV이며 spin-orbit Δso 값은 0.0129eV임을 확인하였다. 10K일때 광전류 봉우리들은 n=1 일때 A₁-, B-₁와 C₁-exction 봉우림을 알았다.

• 한국결정학회지
• /
• 제11권4호
• /
• pp.212-223
• /
• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.226-229
• /
• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.