• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.9
• /
• pp.856-862
• /
• 2005

A flux-lock type SFCL consists of two coils, which are wound in parallel each other through an iron core, and a HTSC thin film connected in series with coil 2. If the current of the HTSC thin film exceeds its critical current by the fault accident, the resistance generated of the HTSC thin film, and thereby the fault current can be limited by the impedance of the flux-lock type SFCL. The amplitude of fault current can be set by the impedance of the flux-lock type SFCL. In this paper, we investigated the variance of the limiting current due to the ratio of inductances between coil 1 and coil 2 in the flux-lock type SFCL through the computer simulations and short circuit tests. In addition, both the simulation results and experimental ones were compared each other. From the comparison of both the results, the simulation results agreed well with the experimental ones.

• Proceedings of the KIEE Conference
• /
• 2004.04a
• /
• pp.83-85
• /
• 2004

We proposed the bridge type fault current limiter(FCL) using switching operation of high-Tc superconducting(HTSC) thin film. The proposed bridge type FCL consists of HTSC thin film, a diode bridge and a dc reactor. The controller for the operation of an interrupter is required in the conventional bridge type FCL to prevent the continuous increase of fault current after a fault happens. On the other hand, the proposed bridge type FCL can limit the fault current without the interrupter and the controller for its operation by the resistance generated when the gradually increased fault current exceeds HTSC thin film's critical current. We calculated the time when the gradually increased fault current started to be limited by the resistance generated in HTSC thin film after a fault happened and confirmed that it could be dependent on the amplitude of source voltage. The experimental results well agreed with the calculated ones from simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.199-202
• /
• 2003

We have investigated the generation of pretilt angle for a nematic liquid crystal (NLC) alignment with rubbing alignment method on two kinds of polyimide (PI) surfaces using thin plastic substrates. The generated NLC pretilt angles on the pre-imidized type PI are about $3.8^{\circ}$ by the rubbing alignment method with thin plastic substrates, However, the pretilt angle measured at about $2.8^{\circ}$ lower on the polyamic acid type PI than by pre-imidized type PI surface with thin polymer film. The tilt angle increases as increasing curring temperature for making polyimide layer using polyamic acid type PI. It was concluded that pretilt angle in the polyimide surface is attributable to the increasing of imide rato.

• Transactions on Electrical and Electronic Materials
• /
• v.9 no.2
• /
• pp.67-72
• /
• 2008

Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-2}$, mobilities from 0.194 to $198\;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4\;{\Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{\circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.289-289
• /
• 2008

We investigated the operational characteristics of the separated three-phase flux-lock type superconducting fault current limiter (SFCL). The single-phase lock type SFCL consist of two coils, which are wound in parallel through an iron core. The high-$T_c$ superconducting(HSTC) thin film connected in series with secondary coil. The separated three-phase flux-lock type SFCL consist of three single-phase flux-lock type SFCL. In a normal condition, the SFCL is not operate. When a fault occurs, the current of a HSTC thin film exceeds its critical current by fault current, the resistance of the HSTC thin film generated. Therefore fault current was limited by SFCL. The separated three-phase flux-lock type SFCL are operated in fault condition such as the the single line-to-ground fault, the double line-to-ground fault and the triple line-to-ground fault. The experimental results, the SFCL operational characteristics was dependent on fault condition.

• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.1
• /
• pp.33-38
• /
• 2012

An in-plane thermoelectric sensor was processed on a glass substrate by evaporation of the n-type Bi-Te and p-type Sb-Te thin films, and its sensing characteristics were evaluated. The n-type Bi-Te thins film used to fabricate the inplane sensor exhibited a Seebeck coefficient of -165 ${\mu}V$/K and a power factor of $80{\times}10^{-4}W/K^2-m$. The p-type Sb-Te thin film used to fabricate the in-plane sensor exhibited a Seebeck coefficient of 142 ${\mu}V$/K and a power factor of $51.7{\times}10^{-4}W/K^2-m$. The in-plane thermoelectric sensor consisting of 15 pairs of the n-type Bi-Te and the p-type Sb-Te evaporated thin films exhibited a sensitivity of 2.8 mV/K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.10
• /
• pp.814-820
• /
• 2009

Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.

• Journal of Information Technology Services
• /
• v.2 no.1
• /
• pp.99-110
• /
• 2003

Because thin-client technology is introduction stage, some company has many problems. To reduce the problems, this paper presents the application areas and the introduction strategy of thin-client technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.97-98
• /
• 2005

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. Phosphorus (P) and arsenic (As) were diffused into about 2.1${\mu}m$ ZnO thin films sputtered by RF magnetron sputtering system mn ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and 700$^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is 700$^{\circ}C$, 3hr Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

• Korean Journal of Materials Research
• /
• v.6 no.7
• /
• pp.678-683
• /
• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.