• Bulletin of the Korean Chemical Society
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• v.28 no.11
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• pp.1945-1950
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• 2007

Two fluorene-based conjugated copolymers containing hexyl-thiophene derivatives, PF-1T and PF-4T, were synthesized via the palladium-catalyzed Suzuki coupling reaction. The number-average molecular weights (Mn) of PF-1T and PF-4T were found to be 19,100 and 13,200, respectively. These polymers were soluble in common organic solvents such as chloroform, chlorobenzene, toluene, etc. The UV-vis absorption maximum peaks of PF-1T and PF-4T in the film state were found to be 410 nm and 431 nm, respectively. Electrochemical characterization revealed that these polymers have low highest occupied molecular orbital (HOMO) levels, indicating good resistance against oxidative doping. Thin film transistor devices were fabricated using the top contact geometry. PF-1T showed much better thin-film transistor performance than PF-4T. A thin film of PF- 1T gave a saturation mobility of 0.001-0.003 cm2 V?1 s?1, an on/off ratio of 1.0 × 105, and a small threshold voltage of ?8.3 V. To support TFT performance, we carried out DSC, AFM, and XRD measurements.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.98-98
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• 1999

Highly transparent and conducting tin-doped indium oxide (ITO) films were deposited on polycarbonate substrate by ion-assited deposition. Low substrate temperature (<10$0^{\circ}C$) was maintained during deposition to prevent the polycarbonate substrate from be deformed. The influence of ion beam energy, ion current density, and tin doping, on the structural, electrical and optical properties of deposited films was investigated. Indium oxide and tin-doped indium oxide (9 wt% SnO2) sources were evaporated with assisting ionized oxygen in high vacuum chamber at a pressure of 2$\times$10-5 torr and deposition temperature was varied from room temperature to 10$0^{\circ}C$. Oxygen gas was ionized and accelerated by cold hallow-cathode type ion gun at oxygen flow rate of 1 sccm(ml/min). Ion bea potential and ion current of oxygen ions was changed from 0 to 700 V and from 0.54 to 1.62 $\mu$A. The change of microstructure of deposited films was examined by XRD and SEM. The electrical resistivity and optical transmittance were measured by four-point porbe and conventional spectrophotometer. From the results of spectrophotometer, both the refractive index and the extinction coefficient were derived.

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.249-253
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• 1998

The influence of PbO additive on dielectric properties and sintering behavior of $(Pb_{0.46}Ca_{0.55})$ {$(Fe__1/2}Nb_{1/2}){0.9}Sn_{{0.1}$}$O_3$ ceramics has been investigated. The incorporation of a limited excess PbO ($\leq$2.0 wt. %) in the starting materials is quite beneficial for densification in the temperature range of 1150~$1175^{\circ}C$ in air. At a small doping level (0.8 wt. %) the ceramics prepared from powders calcined at $900^{\circ}C$ showed the best dielectric properties. The dielectric constants ($\varepsilon_r$) and Q.f were found to be 85.8~85.6 and 8530~8600 GHz, respectively. The temperature coefficient of resonant frequency ($\tau_f$) varied in the range of -2~4 $ppm/^{\circ}C$. Examination of the microstructure as well as analysis of the second phases in these materials revealed the presence of the pyrochlore-type phase which is detrimental to the dielectrics.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.614-617
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• 1995

Thin CoCrTa/Cr films were deposited on glass substrates at $280^{\circ}C$ with or without Al underlayer. The coercivity of CoCrTa increased considerably by introducing an Al underlayer. The grain size of Cr thin film deposited on Al underlayer became smaller than that of Cr thin film deposited on glass substrate. The grain size of CoCrTa thin film was determined by Cr grain size. The cause of the coercivity increase seems to be associated with the refinement and uniform distribution of CoCrTa grains.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.12-16
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• 2022

We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H₂ flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 1.0sccm in order to see how the hydrogen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 0.379×10^-5 Ωcm when the IGZO film was deposited at 300℃ and set up at 1.0sccm. As the oxygen vacancy rate increased, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.96-100
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• 2023

We have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various O₂ flow rate. Experiments were carried out while varying the oxygen gas flow rate from 0sccm to 1.0sccm to see how the oxygen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 2125x10^-3 Ωcm when the IGZO film was deposited at RT and set up at 0.1sccm. As the oxygen vacancy rate decreased, the resistivity intended to increase. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.817-821
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• 2011

We have proposed an optical thin film and micro lens to improve the luminance of organic light emitting device. The first method, optical thin film was calculated refractive index of dielectric layer material that was modulated refractive index of organic material, ITO (indium tin oxide)and glass. The second method, microlens was applied with lenses on the organic device. Optical thin films were designed with Macleod Simulator and Micro Lenses were calculated by FDTD (finite-difference time-domain) solution. The structure of thin film was designed in organic material/ITO/dielectric layer/glass. The lenses size, height and distance were 5 ${\mu}m$, 1 ${\mu}m$, 1 ${\mu}m$, respectively. The material of micro lenses used silicon dioxide. Result, The highest luminance of OLED which applied with microlens was 11,185 $cd/m^2$, when approval voltage was 14.5 V, applied thin film was 5,857 $cd/m^2$. The device efficiency applying microlens increased 3 times than the device which does not apply microlens.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.9
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• pp.1347-1356
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• 2022

In this paper, we investigate the properties of CoGe thin film-based galvanic cells as a function of their dimension (cell length, width, etc.) and show their application as sensors to Arduino-based IoT sensor networks to detect water contact. Because these CoGe thin film-based galvanic cells do not require mechanical strains or temperature gradients unlike piezoelectric and thermoelectric energy harvesters, we think that these thin film-based galvanic cells are more suitable for self-powered sensor networks demanding sustainable and robust energy harvesters. In the past, a sputter-deposited CoGe thin film has not been intensively investigated for energy harvesting appilcations. Thus, in this study, we perform a feasibility study of galvanic cells composed of a sputter-deposited CoGe thin film to see if they can be applied as potential self-powered sensors. We believe that this paper will be of great help in developing even more enhanced sensor networks.

• Advances in nano research
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• v.15 no.2
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• pp.91-104
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• 2023

Development of thin carbon nanotubes (CNTs) nanoliquid film over the rough surface of a horizontal rotating disk is investigated by considering symmetric roughness either along the azimuthal or radial directions. The disk surface is either heated or cooled axisymmetrically from below. The effects of single-walled carbon nanotubes (SWCNTs), multi-walled carbon nanotubes (MWCNTs) are analyzed on the film thinning process with different types of base liquids. Closed form solutions for velocity and temperature field are obtained for small values of Reynolds number whereas the numerical solution is derived for moderate values of Reynolds number. It is found that fluid retention / depletion takes place when the roughness is symmetric along the azimuthal / radial directions. It is also seen that the film thinning rate enhances for MWCNTs compare to SWCNTs. Further it is found that two different heat transfer regions exits within the flow domain depending on the fact that heat is transferred from disk to liquid film and vice-versa.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.335-340
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• 2001

$Ga_2O_3$(1 wt%)-doped ZnO(GZO) thin films were grown on ${\alpha}-Al_2O_3$ (0001) by rf magnetron sputtering at $510^{\circ}C$, whose crystal structure was polycrystalline. As-grown GZO thin film shows poor electrical properties and photoluminescence (PL) spectra. To improve these properties, GZO thin films were annealed at 800-$900^{\circ}C$ in $N_2$atmosphere for 3 min. After the rapid thermal annealing(RTA), deep defect-level emission disappears and near-band emission is greatly enhanced. Annealed GZO thin films show very low resisitivity of $2.6\times10^{-4}\Omega$/cm with $3.9\times10^{20}/\textrm{cm}^3$ carrier concentration and exceptionally high mobility of 60 $\textrm{cm}^2$/V.s. These improved physical properties are explained in terms of translation of doped-Ga atoms from interstitial to substitutional site.