• 제목/요약/키워드: Thin-film multilayer

검색결과 234건 처리시간 0.021초

C60 및 Si 초미립자 박막의 Laser 반응에 의한 가시광선발광 (Visible light emission from $C_60$ and Si nanoparticle film by laser process)

  • 김민성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.598-601
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    • 2000
  • We investigated the fabrication of Si nanoparticle and $C_{60}$ thin films by pulsed laser ablation. As a result, we observed visible green photoluminescence spectra in the Si/C$_{60}$ multilayer films after laser annealing. It is considered that this green photoluminescence is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ via laser annealing.ing.

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FeCo/Pd 초격자 다층박막의 자기 및 자기광학적 특성 (Magnetic and Magneto-Optical Properties of FeCo/Pd Multilayers)

  • 김진홍;신성철
    • 한국자기학회지
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    • 제3권1호
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    • pp.56-60
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    • 1993
  • FeCo/Pd 초격자 다층박막의 FeCo 와 Pd sublayer 두께를 각각 $2.5\;{\AA}$$10.5\;{\AA}$으로 유지시키면서 FeCo sublayer 의 Fe 조성이 0에서 100% 까지 변화함에따른 포화자화값, 수직 자기이방성에너지, 보자력 및 Kerr 회전각의 파장 의존성을 조사 하였다. 포화자화값은 Fe 조성이 48 at.%부근에서 최 고치를 보였고, 수직 자기이방성에너 및 조자력은 Fe조성의 증가에따라 단조감소 하였다. Kerr 회전각은 Fe 조성의 증가에따라 감소하였는데 그 크기 및 변화의 폭은 단파장으로 갈수록 증가하였다.

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Barix Multilayer Barriers; a key enabler for protecting OLED displays and flexible organic devices

  • Moro, L.L.M.;Rutherford, N.;Chu, X.;Visser, R.J.;Graf, G.C.;Gross, M.E.;Bennet, W.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.616-619
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    • 2005
  • OLED display are extremely sensitive to water and oxygen. Developing a thin film encapsulation for this technology has for a long time been elusive. Vitex has developed a multilayer barrier consisting of alternating inorganic and organic layers which can meet the requirements for a successful protection for such displays. In this paper we will discuss the basic process, the model, the results on top and bottom emission OLED displays as well as the application of Barix layers on plastic to create flexible OLED displays. We will show that for displays all the requirement for the telecommunication industry can be met and that the we can scale up to a mass manufacturing process.

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여러 분위기에서의 저온 열처리와 폴리머 기판의 표면 morphology가 비정질 $Ta_2O_5$ 박막 커패시터의 특성에 미치는 영향 (Effects of Low Temperature Annealing at Various Atmospheres and Substrate Surface Morphology on the Characteristics of the Amorphous $Ta_2O_5$ Thin Film Capacitors)

  • 조성동;백경욱
    • 한국재료학회지
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    • 제9권5호
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    • pp.509-514
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    • 1999
  • Interest in the integrated capacitors, which make it possible to reduce the size of and to obtain improved electrical performance of an electronic system, is expanding. In this study, $Ta_2$O\ulcorner thin film capacitors for MCM integrated capacitors were fabricated on a Upilex-S polymer film by DC magnetron reactive sputtering and the effects of low temperature annealing at various atmospheres and substrate surface morphology on the capacitor characteristics were discussed. The low temperature($150^{\circ}C$) annealing produced improved capacitor yield irrespective of the annealing at mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably due to the change of the $Ta_2$O\ulcorner film surface by oxygen, which was explained by conduction mechanism study. Leakage current and breakdown field strength of the capacitors fabricated on the Upilex-S film were 7.27$\times$10\ulcornerA/$\textrm{cm}^2$ and 1.0 MV/cm respectively. These capacitor characteristics were inferior to those of the capacitors fabricated on the Si substrate but enough to be used for decoupling capacitors in multilayer package. Roughness Analysis of each layer by AFM demonstrated that the properties of the capacitors fabricated on the polymer film were affected by the surface morphology of the substrate. This substrate effect could be classified into two factors. One is the surface morphology of the polymer film and the other is the surface morphology of the metal bottom electrode determined by the deposition process. Therefore, the control of the two factors is important to obtain improved electrical of capacitors deposited on a polymer film.

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Effect of the multilayer structure on electrical and mechanical properties fo thin film yttria stabilized zirconia electrolyte

  • Jung, In-Ho;Lee, You-Kee;Park, Jong-Wan
    • Journal of Korean Vacuum Science & Technology
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    • 제2권1호
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    • pp.43-48
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    • 1998
  • The effect of mcirostructure on the electrical properties of yttria stabilized zirconia (YSZ) was analyzed by modeling layer arrangements and mixed phase structure. The YSZ thin films were deposited by RF magnetron sputtering using 30mol% YSZ and 8 mol% YSZ targets with yttrium pellets on porous alumina substrates. The structure, composition and electricla properties of the YSZ films were investigated as functions of sputtering conditons and layer arrangements by XRD, TEM, XPS and acimpedance spectroscopy. The results showed that the triple palyered YSZ films had highermicrohardness, lower compressive stress state and higher ionic conductivity by one order than single and double layered YSZ films. However, sputtered YSZ films have low conductivity compared to YSZ pellets or doctor bladed YSZ thin plates. These results were probably due to the influence of insulating alumina substrates, impractical for most stacking geometries and inductance induced by relatively long platinum, lead wire on YSZ conductivity.

AZO/Ag/AZO 다층박막의 Ag두께에 따른 특성 연구 (Influence of Ag thickness on properties of AZO/Ag/AZO Multi-layer Thin Films)

  • 연제호;김홍배
    • 반도체디스플레이기술학회지
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    • 제16권2호
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    • pp.27-31
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    • 2017
  • AZO/Ag/AZO multi-layer films deposited on glass substrate by RF magnetron sputtering and thermal evaporator have a much better electrical properties than Al-doped ZnO thin films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. The optimum thickness of Ag layers was determined to be $90{\AA}$ for high optical transmittance and good electrical conductivity. The Ag layers thickness $90{\AA}$ is an optical transmittance greater than 80% of visible light and the obtained multilayer thin film with the low resistivity of $8.05{\times}10-3{\Omega}cm$ and the low sheet resistance $5.331{\Omega}/sq$. Applying to TCO and Solar electrode will improve efficiency.

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나노 다층 TiAlSiN 박막의 고온 산화 (High-temperature Oxidation of Nano-multilayered TiAlSiN Filems)

  • 이동복;김민정
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2016년도 추계학술대회 논문집
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    • pp.189-189
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    • 2016
  • In this study, the Al-rich AlTiSiN thin films that consisted of TiN/AlSiN nano-multilayers were deposited on the steel substrate by magnetron sputtering, and their high-temperature oxidation behavior was investigated, which has not yet been adequately studied to date. Since the oxidation behavior of the films depends sensitively on the deposition method and deposition parameters which affect their crystallinity, composition, stoichiometry, thickness, surface roughness, grain size and orientation, the oxidation studies under various conditions are imperative. AlTiSiN nano-multilayer thin films were deposited on a tool steel substrate, and their oxidation behavior of was investigated between 600 and $1000^{\circ}C$ in air. Since the amount of Al which had a high affinity for oxygen was the largest in the film, an ${\alpha}-Al_2O_3-rich$ scale formed, which provided good oxidation resistance. The outer surface scale consisted of ${\alpha}-Al_2O_3$ incoporated with a small amount of Ti, Si, and Fe. Below this outer surface scale, a thin ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale formed by the inwardly diffusing oxygen. The film oxidized slower than the $TiO_2-forming$ kinetics and TiN films, but faster than ${\alpha}-Al_2O_3-forming$ kinetics. During oxidation, oxygen from the atmosphere diffused inwardly toward the reaction front, whereas nitrogen and the substrate element of iron diffused outwardly to a certain extent.

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전착법으로 제작한 ZnO 다층박막 제작과 특성 분석 (Characteristics of ZnO Multi-Layer Film Fabricated by Electrodeposition Method)

  • 이행자;박경희;김종민;장상목
    • 한국전기전자재료학회논문지
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    • 제30권11호
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    • pp.705-709
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    • 2017
  • Effective surface area and morphology of a sensitive thin film are important factors for its applications in sensor systems for the analysis of physical properties. In this study, we investigated the morphologies, electrochemical properties, and applicability of zinc oxide multilayer thin films fabricated by electrodeposition and annealing. The microstructure and electrochemical properties of the zinc oxide films were dependent on temperature and applied voltage. The best characteristics were obtained at an applied voltage of -1.4 V and a temperature of $50^{\circ}C$. The morphologies also changed upon annealing. The results suggest that the zinc oxide films fabricated by electrodeposition and annealing can be applied as various sensor materials.

전력 소자용 유기박막의 전기적 특성 (Electrical Properties of Organic Thin Film for Power Device)

  • 송진원;최용성;문종대;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.20-22
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    • 2006
  • Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed and the molecular area Am. Compression speed was about 30, 40, 50mm/min. Langmuir-Blodgett(LB)layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 9~21. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

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