• Title/Summary/Keyword: Thin-Film

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Electrical Properties of Al3+ and Y3+ Co-doped SnO2 Transparent Conducting Films (Al3+와 Y3+ 동시치환 SnO2 투명전극 박막의 전기적 특성)

  • Kim, Geun-Woo;Seo, Yong-Jun;Sung, Chang-Hoon;Park, Keun-Young;Cho, Ho-Je;Heo, Si-Nae;Koo, Bon-Heun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.10
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    • pp.805-810
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    • 2012
  • Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

Regional Differences of Entry Rate of Freely Diffusible Substances from Peritoneal Cavity (복강내 확산성 물질의 부위별 흡수속도)

  • Cho, Byeong-Deuck;Shin, Dong-Hoon
    • The Korean Journal of Physiology
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    • v.1 no.2
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    • pp.157-168
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    • 1967
  • The entry of antipyrine and urea from the peritoneal cavity of rabbit into organ tissue and blood plasma was studied. Two hundred mg of antipyrine plus 300 mg of urea in 10 ml Ringer's solution was injected into the peritoneal cavity of anesthetized rabbit. The injection was made from above of a rabbit kept tying right side down and it enabled part of the abdominal organs (liver, intestine, kidney) was immersed in the injected solution and kept high concentration gradient throughout the experimental period. The remaining part of the organs was revered only by a thin film of the test solution. Subsequently, in this part of the organs the concentration gradient of the diffusible substances during entry was presumed to decrease as time elapsed. Four pieces of the liver tissue were taken namely, the right superficial, right deep, left superficial and left deep portions. Two were taken from the small intestine, one from the portion which was immersed in. the fluid and the other from that above the fluid mass. Both kidneys were separately analyzed. As a remote organ the gastrocnemius muscle was taken from the right leg of the animal. The intervals which were the time periods elapsed after injections were 5,7,10,15 or 30 minutes. At each point 5 animals were sacrificed and the concentrations of the test substances in the tissue water were measured. The results obtained were as follows. 1. In the liver the right portion which was immersed in the fluid showed higher concentration if the test substances than the left portion and the superficial region exceeded the deep region. The concentrations diminished as the time elapsed after infusion, particulary in the case of antipyrine, suggesting circulatory removal of the substances. In urea such decreasing tendency of the concentration was not obvious, and suggested slower removal rate of it as compared with that of antipyrine. 2. In the small intestine there was no regional difference in the concentration of the test substances. Because of the intestinal motility different portions of the intestine were seemed to have bathed in the fluid of the same concentration. In general the concentrations in the intestinal wall exceeded those of the liver, suggesting a slower removal rate than in the latter. 3. In the kidney the accumulation of the endogenous urea was predominant, and the accumulating mechanism in the renal tissue went on during the period of the experiment. Therefore it revealed increasing tendencies as the time elapsed. The penetration of the test substances in this organ from the peritoneal cavity seemed to be slower than in other abdominal organs, namely liver or small intestine. Part of the test substances in the kidney were obviously brought by the blood stream. 4. Rapid exponential decay of the concentration of antipyrine and of the osmolality of the peritoneal fluid was attributed to the extensive removal through the whole dimension of the peritoneal surface, and the remote organ such as the gastrocnemius muscle attained a fairly close value to that of the abdominal organs in less than 30 minutes. The factors which related to the absorption rate were discussed. They were the concentration gradient, permeability and the regional perfusion rate.

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Effect of X-ray Irradiation on the Pulmonary Surfactant in Rabbits (흉부(胸部) X-선조사(線照射)가 가토폐포(家兎肺胞) 표면활성물질(表面活性物質)에 미치는 영향(影響))

  • Lee, Chull
    • The Korean Journal of Physiology
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    • v.2 no.2
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    • pp.63-73
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    • 1968
  • It is well known that mammalian alveolar membrane is covered with a very thin layer of surfactant film which characteristically reduces surface tension of alveolar membrane, and maintains alveolar stability. Since Clements in 1957 demonstrated that the surfactant is extractable by mincing the lung tissue in saline, various studies on the subject have been succeeded by many workers. However, the effect of radiation on the surfactant is not well clarified. Present study was attempted to observe the effect of x-irradiation on the activity of surfactant in rabbits. X-ray in dose of 300 r, 600 r or 900 r was irradiated to the chest of rabbits. The lung was removed from normal or irradiated rabbits sacrificed by arterial blood shedding, and lung-saline extract, adding 3 grams of lung tissue to 50 mili-liters of saline, was prepared by means of Vertis homogenizer. Tension-area diagram of lung extract was recorded automatically by a modified Langmuir-Wilhelmy balance with a synchronized recording system designed in this department. The surface tension of lung extract was measured at 1st, 2 nd, 3 rd, 7 th and 15 th post-radiation day in 300 r irradiated group, at 3 rd, 7 th and 15 th post-radiation day in 600 r irradiated group, 3 rd and 7 th post-radiation day in 900 r irradiated group respectively. For the histo-pathological study, lung tissue preparations were made in all irradiatiated groups on the day of experiment and in normal group. The results obtained are summarized as follows: 1. The minimal surface tension, maximal surface tension and stability index of normal rabbits lung extracts were 7.68 dynes/cm, 38.84 dynes/cm, and 1.39 respectively. 2. The activity of surfactant was depressed prominently by x-irradiation. However, increase in the dose of x-irradiation did not show any significant change in the degree of surfactant activity suppression. The most marked depression in surfactant was observed at the third post-radiation day in all irradiated groups. 3. Activity of surfactant depressed by x-irradiation showed a tendency of recovering to normal on 15 th post-radiation day. 4. The tendency of change in activity of surfactant following x-irradiation was somewhat correlative with histo-pathological changes. But the degree of depression of surfactant by x-irradiation did not correspond to the degree of histo-pathological changes, and recovery of lung tissue from radiation damage, tissue edema and congestion, seemed to be followed by restoration of surfactant activity. 5. The width of the tension-area diagram was measured at the surface area of 40% in lung extract of normal and x-irradiated rabbits. And it was found that the changes of the width corresponded well with that of minimum surface tension and of stability index in all normal and x-irradiated groups.

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Characteristics of Constructed SPR (Surface Plasmon Resonance) Sensor System for the Detection of Salmonella and hIgG Antigen-Antibody Reaction. (살모넬라와 면역글로블린(hIgG)의 항원-항체반응 감지를 위한 표면 플라즈몬 공명형 센서시스템의 특성)

  • Um, N.S.;Koh, K.N.;Hahm, S.H.;Kim, J.H.;Lee, S.H.;Kang, S.W.
    • Journal of Sensor Science and Technology
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    • v.7 no.4
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    • pp.263-270
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    • 1998
  • Surface Plasmon Resonance (SPR) sensor system, has rapid response and high sensitivity, can be applicable for detecting reaction times of many biospecific interactions. A SPR sensor system was constructed to detect the antigen-antibody reactions of salmonella and hIgG (human immunoglobulin G). Sensor chips made of gold thin film were used for detecting biological bindings of antigen and antibody reactions. The antigen and antibody reactions for salmonella and hIgG were carried out with various time intervals to observed characteristics of these reactions using SPR sensor system. The resonance angle shift changes were clearly observed at the time of salmonella or hIgG antibody injection into sample cell since each antibody was self-assembled on gold chip surface of the sensor. It was found that the antibodies of salmonella and hIgG reacted with its sensor chip surface in 10 minutes and 60 minutes respectively. And the antigens of both salmonella and hIgG were bound to its antibody within 1 minute.

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Characteristics of the Leaf Fiber Plants Cultivated in Korea (국내 재배 엽맥섬유의 특성에 관한 연구)

  • Lee, Hye-Ja;Kim, Nam-Eun;Yoo, Hye-Ja;Han, Young-Sook
    • Journal of the Korean Society of Clothing and Textiles
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    • v.33 no.5
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    • pp.711-720
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    • 2009
  • Leaf fibers have many good properties; they are strong, long, cheap, abundant and bio-degradable. Since they, however, contain a great quantity of non-cellulose components, they have been used for the materials of mats, ropes, bags and nets rather than those of clothing. In this study, we investigated the characteristics of leaf fibers in order to promote the use of leaf fibers for the materials of clothing as well as develop the high value-added textile fibers. Leaf fiber plants including New Zealand Flax, Henequen and Banana plant, which have various nature and shape, were used. New Zealand Flax and Henequen leaves were cut from lower part of plants. Banana leaves and pseudo-stems were peeled and cut from the stem of Banana plants. First, the thin outer skins like film of leaves, veins and stems were removed before retting. The chemical retting had been processed for 1hour, at 100 in 0.4% $H_2SO_4$ aqueous solution(liquid ratio 50:1). Then, the retted leaf fibers had been soaked for 1hour, at room temperature in 0.5% NaClO solution(v/v) to remove the miscellaneous materials. We investigated the physical characteristics of three leaf fibers including the transversal and longitudinal morphology, the contents(%) of pectin, lignin and hemicellulose, the length and diameter of fibers, the tensile strength of the fiber bundles, and the fiber crystallinity and the moisture regain(%). The lengths of fiber from three leaf fibers were similar to their leaf lengths. The fiber bundles were composed of the cellulose paralleled to the fiber axis and the non-cellulose intersecting at right angle with the fiber axis. The diameters of New Zealand Flax, Henequen and Banana fibers were $25.13{\mu}m$, $18.16{\mu}m$ and $14.01{\mu}m$, respectively and their tensile strengths were 19.40 Mpa, 32.16 Mpa and 8.45 Mpa, respective. The non-cellulose contents of three leaf fibers were relatively as high as 40%. If the non-cellulose contents of leaf fibers might be controlled, leaf fibers could be used for the materials of textile fiber, non-wovens and Korean traditional paper, Hanjee.

Microstructure and Electrical Properties of $(Bi,La)_4Ti_3O_{12}$ Thin Film Fabricated by Pulsed Laser Deposition Method (펄스 레이저 증착법으로 제작한 $(Bi,La)_4Ti_3O_{12}$ 박막의 미세구조 및 전기적 특성)

  • Kim, Young-Min;Yoo, Hyo-Sun;Kang, Il;Kim, Nam-Je;Jang, Gun-Eik;Kweon, Soon-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.277-277
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    • 2007
  • $(Bi,La)_4Ti_3O_{12}$ (BLT) 물질은 결정 방향에 따른 강한 이방성의 강유전 특성을 나타낸다. 따라서 BLT 박막을 이용하여 FeRAM 소자 등을 제작하기 위해서는 결정의 방향성을 세심하게 제어하는 것이 매우 중요하다. 현재까지 연구된 BLT 박막의 방향성 조절 결과를 보면, BLT 박막을 스핀 코팅 법 (spin coating method)으로 중착하고, 핵생성 열처리 단계를 조절하여 무작위 방향성 (random orientation)을 갖는 박막을 제조하는 방법이 일반적이었다. 그런데 이러한 스핀 코팅법에서의 핵생성 단계의 제어는 공정 조건 확보가 너무 어려운 단점이 있다. 이러한 어려움을 극복할 수 있는 대안은 스퍼터링 증착법 (sputtering deposition method), PLD법 (pulsed laser deposition method) 등과 같은 PVD (physical vapor deposition) 법의 증착방법을 적용하는 것이다. PVD 법으로 증착하는 경우에는 이미 박막 내에 무수한 결정핵이 존재하기 때문에 핵생성 단계가 필요 없게 된다. PVD 증착법의 적용을 위해서는 타겟 (target)의 제조 및 평가 실험이 선행되어야 한다. 그런데 벌크 BLT 재료의 소결공정 조건과 전기적 특성에 관한 연구 결과는 거의 발표 되지 않고 있다. 본 실험에서는 $Bi_2O_3$, $TiO_2$ and $La_2O_3$ 분말을 이용하여 최적의 조성을 구하기 위하여 Bi양을 변화시키며 타겟을 제조 하였다. 혼합된 분말을 하소 후 pallet 형태로 성형하여 소결을 실시하였다. 시편을 1mm 두께로 연마하고, 표면에 silver 전극을 인쇄하여 전기적 특성을 측정하였다. Bi양이 3.28몰 첨가된 조성에서 최대의 잔류분극 (2Pr) 값을 얻었고, 이때의 값은 약 $18{\mu}C/cm^2$ 정도였다. 최적화된 조성 ($Bi_{3.28}La_{0.75}Ti_3O_{12}$)으로 BLT 타겟을 제조하여 PLD법으로 박막을 제조하였다. 박막 제조 시 압력은 $1{\times}10^{-1}\;{\sim}\;1{\times}10^{-4}\;Torr$ 범위에서 변화시켰다. $1{\times}10^{-1}\;Torr$ 압력을 제외하고는 모든 압력에서 BLT 박막이 증착되었다. 중착된 박막을 $650\;{\sim}\;800^{\circ}C$에서 30분간 열처리를 실시하고 전기적 특성을 평가한 결과, $1{\times}10^{-2}\;Torr$에서 증착한 박막에서 양호한 P-V (polarization-voltage) 이력곡선을 얻을 수 있었고, 이때의 잔류분극 (2Pr) 값은 약 $6\;{\mu}C/cm^2$ 이었다. 주사전자현미경 (SEM)을 이용하여 BLT 박막 표면의 미세구조도 관찰하였는데, 스핀코팅 법으로 증착한 경우에 관찰되었던 조대화된 입자들은 관찰되지 않았고, 상당히 양호한 입자 크기 균일도를 나타내었다.

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Etching properties of $Na_{0.5}K_{0.5}NbO_2$ thin film using inductively coupled plasma (유도결합 플라즈마를 이용한 $Na_{0.5}K_{0.5}NbO_2$ 박막의 식각 특성)

  • Kim, Gwan-Ha;Kim, Kyoung-Tae;Kim, Jong-Gyu;Woo, Jong-Chang;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.116-116
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    • 2007
  • 21 세기에 접어들면서 인터넷을 통한 정보 통신의 발달과 개인 휴대용 이동 통신기기의 활발한 보급에 따라 휴대형 전자기기들의 소형화와 고성능화로 나아가고 있다. 이러한 전자기기에 사용될 IC의 내장 메모리 또한 집적화 및 고속화, 저 전력화가 이루어져야 한다. 이러한 전자기기들에 필수적인 압전 세라믹스 부품 중 압전 부저 및 기타 음향 부품등을 각종 전자기기와 무선 전화기에 채택함으로써 압전 부품에 대한 수요와 생산이 계속 증가할 것으로 전망된다. 이처럼 압전 세라믹스를 이용한 그 응용 범위는 대단히 방대하며, 현재 모든 압전 부품들은 PZT 계열 재료로 만들어지고 있고, 차후 모두 비납계열 재료로 대체될 것이 확실시된다. Pb의 환경오염은 이미 오래전부터 큰 문제점으로 인식되고 있었으며 그 일례로 미국의 캘리포니아 주에서는 1986년부터 약 800종의 유해물질, 그 중에서도 Pb 사용을 300ppm 이하로 규제하는 Proposition 65를 제정하여 실행하고 있다. 그리고 2003년 2월에 EU (European Union) 에서 발표한 전자산업에 관한 규제 사항중 하나인 위험물질 사용에 관한 지칭 (Restriction of Hazardous Substance, RoHS) 에 의하면, 2006 년 7월부터 전기 전자 제품에 있어서 위험 물질인 Pb을 포함한 중금속 물질(카드늄, 수은, 6가 크롬, 브롬계 난연재)의 사용을 금지한다고 발표하였다. 비록 전자세라믹 부품에 함유된 Pb는 예외 사항으로 두었지만 대체 가능한 물질이 개발되면 전자세라믹 부품에서도 Pb의 사용을 금지한다고 규정하였다. 더욱이 일본은 2005 년부터 Pb 사용을 금지시켰다. 이와 같이 Pb가 환경에 미치는 영향 때문에 비납계 강유전 물질 및 압전 세라믹스 재료에 대한 연구가 전 세계적으로 활발히 진행되고 있다. 본 연구에서는 비납계 강유전체의 patterning을 위해서, NKN 박막을 고밀도 플라즈마원인 ICP를 이용하여 식각 mechanism을 연구하고, 식각변수에 따른 식각 공정을 최적화에 대하여 연구하였다. 가스 혼합비에 따라 식각 할때 700 W의 RF 전력과 - 150 V의 직류 바이어스 전압을 인가하였고, 공정 압력은 2 Pa, 기판 온도는 $23^{\circ}C$로 고정하였다. 식각 속도는 Tencor사의 Alpha-step 500을 이용하여 측정되었으며 식각 시 NKN 박막 표면과 라디칼과의 화학적인 반응을 분석하고 식각 메커니즘을 규명하기 위하여 XPS(x-ray photoelectron spectroscopy)를 사용하였다.

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Polymer Optical Microring Resonator Using Nanoimprint Technique (나노 임프린트 기술을 이용한 폴리머 링 광공진기)

  • Kim, Do-Hwan;Im, Jung-Gyu;Lee, Sang-Shin;Ahn, Seh-Won;Lee, Ki-Dong
    • Korean Journal of Optics and Photonics
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    • v.16 no.4
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    • pp.384-391
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    • 2005
  • A polymer optical microring resonator, which is laterally coupled to a straight bus waveguide, has been proposed and demonstrated using a nanoimprint technique. The propagation loss of the ring waveguide and the optical power coupling between the ring and bus waveguides was calculated by using a beam propagation method, then the dependence of the device performance on them was investigated using a transfer matrix method. We have especially introduced an imprint stamp incorporating a smoothing buffer layer made of a silicon nitride thin film. This layer played an efficient role in improving the sidewall roughness of the waveguide pattern engraved on the stamp and thus reducing the scattering loss. As a result the overall Q factor of the resonator was greatly increased. Also it reduced the gap between the ring and bus waveguides effectively to enhance the coupling between them, without relying on the direct writing method based on an e-beam writer. As for the achieved device performance at the wavelength of 1550 nm, the quality factor, the extinction ratio, and the free spectral range were ~103800, ~11 dB, and 1.16 m, respectively.

CMOS 소자 응용을 위한 Plasma doping과 Silicide 형성

  • Choe, Jang-Hun;Do, Seung-U;Seo, Yeong-Ho;Lee, Yong-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.456-456
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    • 2010
  • CMOS 소자가 서브마이크론($0.1\;{\mu}m$) 이하로 스케일다운 되면서 단채널 효과(short channel effect), 게이트 산화막(gate oxide)의 누설전류(leakage current)의 증가와 높은 직렬저항(series resistance) 등의 문제가 발생한다. CMOS 소자의 구동전류(drive current)를 높이고, 단채널 효과를 줄이기 위한 가장 효율적인 방법은 소스 및 드레인의 얕은 접합(shallow junction) 형성과 직렬 저항을 줄이는 것이다. 플라즈마 도핑 방법은 플라즈마 밀도 컨트롤, 주입 바이어스 전압 조절 등을 통해 저 에너지 이온주입법보다 기판 손상 및 표면 결함의 생성을 억제하면서 고농도로 얕은 접합을 형성할 수 있다. 그리고 얕은 접합을 형성하기 위해 주입된 불순물의 활성화와 확산을 위해 후속 열처리 공정은 높은 온도에서 짧은 시간 열처리하여 불순물 물질의 활성화를 높여주면서 열처리로 인한 접합 깊이를 얕게 해야 한다. 그러나 접합의 깊이가 줄어듦에 따라서 소스 및 드레인의 표면 저항(sheet resistance)과 접촉저항(contact resistance)이 급격하게 증가하는 문제점이 있다. 이러한 표면저항과 접촉저항을 줄이기 위한 방안으로 실리사이드 박막(silicide thin film)을 형성하는 방법이 사용되고 있다. 본 논문에서는 (100) p-type 웨이퍼 He(90 %) 가스로 희석된 $PH_3$(10 %) 가스를 사용하여 플라즈마 도핑을 실시하였다. 10 mTorr의 압력에서 200 W RF 파워를 인가하여 플라즈마를 생성하였고 도핑은 바이어스 전압 -1 kV에서 60 초 동안 실시하였다. 얕은 접합을 형성하기 위한 불순물의 활성화는 ArF(193 nm) excimer laser를 통해 $460\;mJ/cm^2$의 에니지로 열처리를 실시하였다. 그리고 낮은 접촉비저항과 표면저항을 얻기 위해 metal sputter를 통해 TiN/Ti를 $800/400\;{\AA}$ 증착하고 metal RTP를 사용하여 실리사이드 형성 온도를 $650{\sim}800^{\circ}C$까지 60 초 동안 열처리를 실시하여 $TiSi_2$ 박막을 형성하였다. 그리고 $TiSi_2$의 두께를 측정하기 위해 TEM(Transmission Electron Microscopy)을 측정하였다. 화학적 결합상태를 분석하기 위해 XPS(X-ray photoelectronic)와 XRD(X-ray diffraction)를 측정하였다. 접촉비저항, 접촉저항과 표면저항을 분석하기 위해 TLM(Transfer Length Method) 패턴을 제작하여 I-V 특성을 측정하였다. TEM 측정결과 $TiSi_2$의 두께는 약 $580{\AA}$ 정도이고 morphology는 안정적이고 실리사이드 집괴 현상은 발견되지 않았다. XPS와 XRD 분석결과 실리사이드 형성 온도가 $700^{\circ}C$에서 C54 형태의 $TiSi_2$ 박막이 형성되었고 가장 낮은 접촉비저항과 접촉저항 값을 가진다.

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Direct Imaging of Polarization-induced Charge Distribution and Domain Switching using TEM

  • O, Sang-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.99-99
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    • 2013
  • In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

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