• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.450-453
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• 2020

In this study, ZnO:Ga thin films were fabricated on a glass substrate using various Ar flows by an RF magnetron sputter system at room temperature. The dependencies of Ar flow on different properties were investigated. An appropriate control over the Ar flow led to the formation of a high-quality thin film. The ZnO:Ga films were formed as a hexagonal wurtzite structure with high (002) preferential orientation. The films exhibited a typical columnar microstructure and a smooth top face. The average transmittance was 85~89% within the visible area. By decreasing the Ar flow, the sheet resistance was decreased due to an increase in the grain size and a decrease in the root mean square roughness. The lowest sheet resistance of 86 Ω/□ was obtained at room temperature for the 40 sccm Ar flow.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.217-217
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• 2016

The amorphous InGaZnO (a-IGZO) is widely accepted as a promising channel material for thin-film transistor (TFT) applications owing to their outstanding electrical properties [1, 2]. However, a-IGZO TFTs have still suffered from their bias instability with illumination [1-4]. Up to now, many researchers have studied the sub-gap density of states (DOS) as the root cause of instability. It is well known that defect states can influence on the performances and stabilities of a-IGZO TFTs. The defects states should be closely related with the deposition condition, including sputtering power, and pressure. Nevertheless, it has not been reported how these defects are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOIs) can be generated by electron attachment in oxygen atom near target surface and then accelerated up to few hundreds eV by a self-bias; at this time, the high energy bombardment of NOIs induce defects in oxide thin films. Recently, we have reported that the properties of IGZO thin films are strongly related with effects of NOIs which are generated during the sputtering process [5]. From our previous results, the electrical characteristics and the chemical bonding states of a-IGZO thin films were depended with the bombardment energy of NOIs. And also, we suggest that the deep sub-gap states in a-IGZO as well as thin film properties would be influenced by the bombardment of high energetic NOIs during the sputtering process.In this study, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process to prevent the NOIs bombardment effects and present how much to be improved the properties of a-IGZO thin film by this new deposition method. We deposited a-IGZO thin films by MFSS on SiO2/p-Si and glass substrate at various process conditions, after which we investigated the morphology, optical and electrical properties of the a-IGZO thin films.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권10호
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• pp.461-466
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• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

• 한국작물학회지
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• 제32권4호
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• pp.425-430
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• 1987

남부지방에서 황금의 직파재배와 육묘이직 재배시 적정 파종기와 정식기를 구명하고자 시험을 실시한 결과는 다음과 같다. 1. 출현은 황금의 파종기나 정식기가 빠를수록 늦어지고 늦어질수록 단축되는 경향으로 출현일수와 파종기 및 정식기간에는 고도의 부의 상관이 인정되었다. 2. 생육은 직파재배에 있어서 4월 15 일의 파종이 초장과 경태가 크고 분지수가 많아서 가장 양호하였으며, 육묘이식재배는 4월 1일 정식이 가장 좋은 경향이었다. 3 수량은 직파담배에서는 4월 15일 파종, 육묘 이식재배는 4월 1일 정식에서 근장이 가장 크고, 건근중이 무거워 수량이 증수되었다. 4 주요 형질간 상관을 보면 수량은 초장과 분지수, 그리고 근장과 정의 상관 관계를 나타내었고, 근장은 건근중과 건경중에 고도의 정의 상관 관계가 인정되었다.

• Journal of Biosystems Engineering
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• 제27권3호
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• pp.219-226
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• 2002

Desorption equilibrium moisture contents of oak mushroom were measured by the static method using salt solutions at flour temperature levels of 35$\^{C}$, 45$\^{C}$, 55$\^{C}$ and 6$\^{C}$ and five relative humidity levels in the range from 11.0% to 90.8%. EMC data were fitted to the modified Henderson, Chung-Pfost, modified Halsey and modified Oswin models using nonlinear regression analysis. Drying tests far oak mushroom were conducted in an experimental dryer equipped with air conditioning unit. The drying test were performed in triplicate at flour air temperatures of 35$\^{C}$, 45$\^{C}$, 55$\^{C}$ and 65$\^{C}$ and three relative humidities of 30%, 50% and 70% respectively. Measured moisture ratio data were fitted to the selected four drying models(Lewis, Page, simplified diffusion and Thompson models) using stepwise multiple regression analysis. The results of comparing root mean square errors for EMC models showed that modified Halsey was the best model, and modified Oswin models could be available far oak mushroom. The results of comparing coefficients of determination and root mean square errors of moisture ratio for four drying models showed that Page model were found to fit adequately to all drying test data with a coefficient of determination of 0.9990 and root mean square error of moisture ratio of 0.00739.

• 고려인삼학회:학술대회논문집
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• 고려인삼학회 1978년도 학술대회지
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• pp.43-49
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• 1978

This study was devised to observe the cytotoxic activity of extracts of Panax ginseng root against some cancer cells and to purify the crude extract. Three kinds of cancer cells(leukemic cells L5178Y, HeLa cells and Sarcoma 180 cells) and mouse embryo cells (as normal cells) were used for this study. The ginseng roots were extracted with petroleum ether in soxhlet apparatus, and the crude extracts were purified by the silicic acid column chromatography and thin-layer chromatography methods. The results obtained are summarized as follows; 1. Eight to ten mg of the petroleum ether extract (crude extract) were obtained from 1 g of Panax ginseng root, and its activities per mg were about 1,000 units. 2. Doubling time of the L5178Y cells was increased to two fold by 24 hours incubation in culture medium containing about one ${\mu}g$ of extract per ml, and eight and ten folds higher concentration of ginseng extract were required for the Sarcoma 180 cells and HeLa cells, respectively, than for the leukemic cells(L5178Y) to inhibit the cellular growth to the same degree. 3. When the L5178Y cells were exposed to medium containing various concentration of the extract for 24 hours before initiation of the soft agar cloning procedure, about $99\%$ of the L5178Y cells were killed at concentration of 8 units per ml. 4. The growth rate of mouse embryo cell (as normal cell) was not affected by the culture with media containing various amounts (1.45 to 30.0 ${\mu}g/ml$) of the extract. 5. The crude extract could be purified about four times by silicic acid column chromatography using several solvent systems, and one spot of active compound could be obtained on the thin-layer chromatogram. 6. In the Swiss mice inoculated with Sarcoma 180 cells, a survival time of the experimental group (injection group of active compound) was extended more. 1.5 to 2.0 times than the control group's(no injection group).

• 구강회복응용과학지
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• 제35권4호
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• pp.253-259
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• 2019

본 증례 보고는 하악 전치에 발생한 치은 퇴축을 laterally closed tunnel technique을 이용하여 처치하였다. 환자는 모두 과거 교정 치료 시 하악 전치의 경사도를 변화시켰으며 치주 적으로 얇은 생체형을 가지고 있었다. 터널링법으로 수여 부를 형성하고 구개 측에서 채득한 결합조직이식편을 터널내에 위치시킨 후 판막의 변연을 치근 중앙부를 향해 측방으로 이동시켜 봉합하여 이식편을 피개 하였다. 얇은 치주 생체형에도 불구하고 치근 피개를 성공적으로 얻을 수 있었으며 각화 치은의 획득과 주변 조직과의 색, 형태 조화로 심미성을 달성할 수 있었다.

• 접착 및 계면
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• 제10권1호
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• pp.17-22
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• 2009

Polymer thin films were prepared by radio frequency (RF) plasma polymerization of phthalic anhydride (PA). First, monomer vaporization temperature ($100{\sim}160^{\circ}C$) was optimized by evaluating the thermal properties of thin films using differential scanning calorimeter (DSC) and measuring the root-mean-square (RMS) roughness with atomic force microscope (AFM) at the fixed plasma power of 10 W and time of 5 min in a continuous-wave (CW) mode. Plasma power (5~20 W) was then optimized by measuring the film solubility in solvents such as toluene, acetone, dimethylsulfoxide (DMSO) and 1 methylpyrrolidine (NMP). Next, pulsed mode plasma polymerization was also studied by varying the duty cycle of on-time (5, 20%) under optimized conditions of continuous-wave (CW) mode ($120^{\circ}C$, 10 W) in order to increase the anhydride functional groups. Finally, polymer thin films were characterized by Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analyzer (TGA) and ${\alpha}$-step.

• Journal of Biosystems Engineering
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• 제31권5호
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• pp.410-415
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• 2006

This study was performed to develop thin layer drying equations for green rice. Thin layer drying tests of green rice were conducted at three temperature levels of 30, 40, $50^{\circ}C$ and two relative humidity levels of 30, 50% respectively. The measured moisture ratio were fitted to the selected four drying models (Page, Thompson, Simplified diffusion and Lewis model) using stepwise multiple regression analysis. The overall drying rate increased as the drying air temperature and as relative humidity was increased, but the effect of temperature increase was dominant. Half response time (Moisture ratio=0.5) of drying was affected by both drying temperature and relative humidity Drying rate was mainly affected by relative humidity at drying temperature of $50^{\circ}C$. The results of comparing coefficients of determination and root mean square error of moisture ratio for four drying models showed the Page model was found to ft adequately to all drying test data.

• Journal of Biosystems Engineering
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• 제29권6호
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• pp.495-500
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• 2004

This study was performed to develop thin layer drying equations for low temperature. Thin layer drying tests of short grain rough rice were conducted at three low temperature levels of 15, 25, $35^{\circ}C$ and two relative humidity levels of 30, $50\%$, respectively. The measured moisture ratios were fitted to the selected four drying models (Page, Thompson, Simplified diffusion and Lewis model) using stepwise multiple regression analysis. The overall drying rate increased as the drying air temperature was increased and as relative humidity was decreased, but the effect of temperature increase was dominant. Half response time (Moisture ratio=0.5) of drying was affected by both drying temperature and relative humidity at drying temperature of below $25^{\circ}C$, but at $35^{\circ}C$ was mainly affected by drying temperature. The results of comparing coefficients of determination and root mean square error of moisture ratio for low drying models showed that Page model was found to fit adequately to all drying test data.