• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.228-231
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• 2006

This paper briefly introduces silicon based thin film solar cells: amorphous (a-Si:H), microcrystalline ${\mu}c-Si:H$ single junction and $a-Si:H/{\mu}c-Si:H$ tandem solar cells. The major difference of a-Si:H and ${\mu}c-Si:H$ cells comes from electro-optical properties of intrinsic Si-films (active layer) that absorb incident photon and generate electron-hole pairs. The a-Si:H film has energy band-gap (Eg) of 1.7-1.8eV and solar cells incorporating this wide Eg a-Si:H material as active layer commonly give high voltage and low current, when illuminated, compared to ${\mu}c-Si:H$ solar cells that employ low Eg (1.1eV) material. This Eg difference of two materials make possible tandem configuration in order to effectively use incident photon energy. The $a-Si:H/{\mu}c-Si:H$ tandem solar cells, therefore, have a great potential for low cost photovoltaic device by its various advantages such as low material cost by thin-film structure on low cost substrate instead of expensive c-Si wafer and high conversion efficiency by tandem structure. In this paper, the structure, process and operation properties of Si-based thin-film solar cells are discussed.

• Journal of Magnetics
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• 제5권1호
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• pp.19-22
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• 2000

The effects of a hard-biased Held on the magnetic and magnetoresistive properties of a crossed spin-valve head are investigated by computer simulation with particular emphasis on the asymmetry of the output signal. The spin-valve considered in this work is NiMn (25 nm)/NiFe (2.5 m)/Cu (3 nm)/NiFe (5.5 m), with a length of 1500 m and a width of 600 nm. A simple model is used where each magnetic layer consists of a single domain, and the magnetoresistance is a function of the angle between the magnetization directions of the two magnetic layers. The ideal crossed spin-valve structure is not realized with the present model and magnetic parameters, but the deviation from ideality is decreased by the hard-biased field. This results in the improvement of the linearity of the output signal with the use of the bias field. The magnetoresistance ratio and magnetoresistive sensitivity, however are reduced. The magnetic properties including the magnetoresistance are found to be strongly affected by magnetostatic interactions, particularly the inter-layer magnetostatic field.

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.463-473
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• 2023

In recent years, the transparent amorphous oxide thin film transistor represented by indium-gallium-zinc-oxide (IGZO) has become the first choice of the next generation of integrated circuit control components. This article contributes an overview of IGZO thin-film transistors (TFTs), including their fundamental principles and recent advancements. The paper outlines various TFT structures and places emphasis on the fabrication process of the active layer. The result showed that the size of the active layer including the length-to-width ratio and the width could have a significant effect on the mobility. And the process of TFT could influence the crystal structure of IGZO thin film. Furthermore, the article presents an overview of recent applications of IGZO TFTs, such as their use in display drivers and TFT memories. At last, the future development of IGZO TFT is forecasted in this paper.

• 멤브레인
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• 제28권1호
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• pp.75-82
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• 2018

정삼투법을 이용한 해수담수화는 역삼투 공정에 비해 에너지 절감이 가능하여 해수담수화 차세대 기술로 주목받고 있다. 막을 기반으로 하는 수처리 분야에서 분리 성능을 향상시키고 새로운 기능을 부여하기 위해, 고분자 매트릭스에 필러인 나노물질을 삽입하는 박막 나노복합체 분리막(thin film nanocomposite, TFN) 개발에 대한 연구가 요구되고 있다. 본 연구에서는 딥 코팅(dip coating) 방법을 기반으로 한 다층박막적층법(Layer-by-layer, LBL)을 이용하여 산화그래핀(graphene oxide, GO)의 나노 적층구조를 제어하여, 정삼투 공정에서의 높은 안정성 및 높은 수투과도 및 염 제거, 낮은 염 역확산을 갖는 그래핀 나노복합체 분리막을 개발하고자 하였다. 정삼투 공정의 성능 향상을 위한 산화그래핀의 환원 반응시간과 LBL 딥코팅 적층 수의 최적화를 통해, 수투과도 2.51 LMH/bar, 물분자 선택성 8.3 L/g, 염 제거율 99.5%를 갖는 나노복합체 분리막을 개발하였다. 이는 상용화된 CTA FO 분리막보다 수투과도는 10배, 물분자 선택성은 4배 높게 향상되었으며, 염 제거율은 비슷한 수준으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.413-413
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• 2012

Lead sulfide (PbS) Colloidal quantum dots (CQDs) are promising material for the photovoltaic device due to its various outstanding properties such as tunable band-gap, solution processability, and infrared absorption. More importantly, PbS CQDs have large exciton Bohr radius of 20 nm due to the uniquely large dielectric constants that result in the strong quantum confinement. To exploit desirable properties in photovoltaic device, it is essential to fabricate a device exhibiting stable performance. Unfortunately, the performance of PbS NQDs based Schottky solar cell is considerably degraded according to the exposure in the air. The air-exposed degradation originates on the oxidation of interface between PbS NQDS layer and metal electrode. Therefore, it is necessary to enhance the stability of Schottky junction device by inserting a passivation layer. We investigate the effect of insertion of passivation layer on the performance of Schottky junction solar cells using PbS NQDs with band-gap of 1.3 eV. Schottky solar cell is the simple photovoltaic device with junction between semiconducting layer and metal electrode which a significant built-in-potential is established due to the workfunction difference between two materials. Although the device without passivation layer significantly degraded in several hours, considerable enhancement of stability can be obtained by inserting the very thin LiF layer (<1 nm) as a passivation layer. In this study, LiF layer is inserted between PbS NQDs layer and metal as an interface passivation layer. From the results, we can conclude that employment of very thin LiF layer is effective to enhance the stability of Schottky junction solar cells. We believe that this passivation layer is applicable not only to the PbS NQDs based solar cell, but also the various NQDs materials in order to enhance the stability of the device.

• 대한금속재료학회지
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• 제48권11호
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• pp.1041-1046
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• 2010

The reactions between a Sn-3.0Ag-0.5Cu solder alloy and electroless Ni/electroless Pd/immersion Au (ENEPIG) surface finishes with various Pd layer thicknesses (0, 0.05, 0.1, 0.2, $0.4{\mu}m$) were examined for the effect of the Pd layer on the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow at $235^{\circ}C$. The thin layer deposition of an electroless Pd (EP) between the electroless Ni ($7{\mu}m$) and immersion Au ($0.06{\mu}m$) plating on the Cu substrate significantly retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow. Its retarding effect increased with an increasing EP layer thickness. When the EP layer was thin (${\leq}0.1{\mu}m$), the retardation of the massive spalling was attributed to a reduced growth rate of the $(Cu,Ni)_6Sn_5$ layer and thus to a lowered consumption rate of Cu in the bulk solder during reflow. However, when the EP layer was thick (${\geq}0.2{\mu}m$), the initially dissolved Pd atoms in the molten solder resettled as $(Pd,Ni)Sn_4$ precipitates near the solder/$(Cu,Ni)_6Sn_5$ interface with an increasing reflow time. Since the Pd resettlement requires a continuous Ni supply across the $(Cu,Ni)_6Sn_5$ layer from the Ni(P) substrate, it suppressed the formation of $(Ni,Cu)_3Sn_4$ at the $(Cu,Ni)_6Sn_5/Ni(P)$ interface and retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer.

• Journal of Electrical Engineering and Technology
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• 제2권4호
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• 지구물리와물리탐사
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• 제15권1호
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• pp.39-46
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• 2012

최근에는 지금까지 주로 탐사개발이 이루어진 구조적 저류층보다 층서적 저류층에 대한 관심이 높아지고 있다. 하지만 얇은 두께의 가스 저류층의 경우 동조효과로 인해 겹쌓기 단면도에서 탐지가 어렵다. 게다가 얇은 저류층 내 염수가 있는 부분과 가스로 치환된 부분으로부터의 반사파가 동일한 극성을 갖는 경우 일반적인 자료 처리 기술을 이용해서 가스가 있는 부분을 규명하는 것이 쉽지 않다. 본 연구에서는 빛띠 분해를 이용해서 얇은 저류층 내 가스로 치환된 부분을 나타내는 방법을 소개하고자 한다. 먼저, Class 1, Class 3 그리고 Class 4의 AVO 반응을 가지는 매질의 물성을 이용하여 다양한 입사각과 진동수에 따른 진폭 빛띠를 분석하였다. 그 결과 입사각과 AVO 종류에 무관하게 최대 진폭 빛띠 값을 갖는 꼭지 진동수 근처에서 염수와 가스로 치환된 얇은 층의 진폭 빛띠 값이 가장 크게 차이가 나는 것을 확인하였다. 또한 Class 3와 Class 4의 성질을 가지는 매질에서는 가스로 치환된 부분의 진폭 빛띠가 꼭지 진동수에서 염수로 치환된 부분의 진폭 빛띠보다 크게 나타나는 것을 확인하였고 이러한 현상은 Class 1에서는 반대로 일어나는 것을 확인하였다. 위의 결과를 토대로 얇은 저류층내에서 가스로 치환된 부분을 염수로 치환된 부분과 구분하기 위해서 겹쌓기 단면에 빛띠 분해법을 적용하였다. 위 방법에 대한 타당성을 검증하기 위해서 동일한 반사 극성을 가지면서 염수와 가스로 치환된 부분이 모두 있는 하나의 얇은 저류층 속도 모델을 설정하였다. 결과적으로 Wigner-Ville distribution을 사용해서 얻은 꼭지 진동수 근처에서의 빛띠 분해 단면도를 통해 겹쌓기 단면에서는 구분이 어려웠던 얇은 저류층 내에서의 염수와 가스로 치환된 부분을 구분할 수 있었다.

• 한국전기전자재료학회논문지
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• 제27권7호
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• pp.472-476
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• 2014

We report the characteristics of thin-film transistor (TFT) to make the bi-channel structure with stacked $Mg_{0.1}Zn_{0.9}O$ (Mg= 10 at.%) and ZnO. The ZnO and $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited by radio frequency (RF) co-sputter system onto the thermally oxidized silicon substrate. A total thickness of active layer was 50 nm. Firstly, the ZnO thin films were deposited to control the thickness from 5 nm to 30 nm. Sequentially, the $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited to change from 45 nm to 20 nm. The bi-layer TFT shows more improved properties than the single layer TFT. The field effect mobility and subthreshold slope for $Mg_{0.1}ZnO_{0.9}O$/ZnO-TFT are $7.40cm^2V^{-1}s^{-1}$ and 0.24 V/decade at the ZnO thickness of 10 nm, respectively.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.193-196
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• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.