• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.75-75
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.92-93
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.80-81
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• 1993

• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• Polymer(Korea)
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• v.38 no.4
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• pp.525-529
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• 2014

PEDOT-$TiO_2$ hybrid conductive thin film including semiconductive metal oxide was successfully prepared via simultaneous vapor phase polymerization (VPP). The mechanical properties such as pencil hardness and anti-scratch property as well as optoelectrical properties of PEDOT-$TiO_2$ hybrid thin film could be improved as compared with pristine PEDOT thin film. Physicochemically stable crosslinked $TiO_2$ layer derived from a sol-gel process by FTS was generated in the PEDOT thin film layer by simultaneous VPP, resulting in improving mechanical properties of the hybrid thin films without any deterioration of their original optoelectrical properties. PEDOT-$TiO_2$ hybrid thin film showed better electrical conductivity as compared with PEDOT film. It might be due to the fact that the surface morphology of hybrid thin film prepared by simultaneous VPP showed smoother than that of pristine PEDOT thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.120-123
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• 2002

In this study it had an excellent optical characteristic, it followed in the creation rate and the refractive index regulation to the ease. Chalcogenide produced the $As_{45}Se_{45}Te_{10}$ thin film and the $MgF_{2}$ thin film. It measured thin film plan simulation, and the thin film has a 1 -dimensional photonic band gap. The chalcogenide $As_{45}Se_{45}Te_{10}$ thin film was measured with the fact that it has a high refractive index (2.6~2.9). The $As_{45}Se_{45}Te_{10}$ and $MgF_{2}$ thin film, have a high refractive index and a low refractive index, it used a simulation and planed period 5-pairs structure, the result was from 500nm to 800nm. It will be able to confirm the characteristic which most of the incidence light reflects, the He-Ne (632.8nm) laser was irradiated in the thin film which stabilized the thin film. $As_{45}Se_{45}Te_{10}$ (high refractive index layer: H) and $MgF_{2}$ (low refractive index layer: L) results which plans the thin film with glass/LHLHLLHLHL/air structure, 632.8nm against transmitance, increased a lot. An application possibility with the filter against a specific wave length was confirmed.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.45-49
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• 1999

A flammable gas sensor based on the $SnO_2$thin film deposited by the reactive ion assisted deposition was fabricated and ultra-thin Pd layer as catalyst was adsorbed at surface by ion beam sputtering. The initial oxidation states of Pd catalyst were controlled to investigate the role of Pd in the sensing process of inflammale gas sensor through annealing in air and vacuum respectively. The Pd catalyst existing in pure metallic state showed the sensitivity higher than that of PdO. The result might be closely related to the fact that PdO as a surface acceptor would receive electrons via Pd sub-channel from $SnO_2$, and thus which reduces the sensitivity and delay the response time.

• Journal of the Korean Magnetics Society
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• v.11 no.6
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• pp.262-266
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• 2001

The magnetic switching volume is known as an important parameter to understand the magnetization reversal process, thermal stability of the written information and media noise. This parameter is influenced significantly by the microstructure of the magnetic layer as well as underlayer. Therefore, we fabricated CoSm/Cr thin films with varying magnetic layer thickness under constant sputtering by using a dc magnetic sputtering machine. The magnetic layer thickness effect on the magnetic switching volume have been studied by the means of magnetic viscosity and dc demagnetization remanence curve mesurements. From these measurements, we found that the switching volumes increased with increasing the magnetic layer thickness, whereas the coercivity showed different behavior. These may be a result of the increased intergranular coupling and the larger volume fraction of the magnetic layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.418.2-418.2
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• 2016

$Al_2O_3$ passivation layer has excellent passivation properties at p-type Si surface. This $Al_2O_3$ layer forms thin $SiO_2$ layer at the interface. There were some studies about inserting thermal oxidation process to replace naturally grown oxide during $Al_2O_3$ deposition. They showed improving passivation properties. However, thermal oxidation process has disadvantage of expensive equipment and difficult control of thin layer formation. Wet chemical oxidation has advantages of low cost and easy thin oxide formation. In this study, $Al_2O_3$/$SiO_2/Si(100)$ interface was formed by wet chemical oxidation and PA-ALD process. $SiO_2$ layer at Si wafer was formed by $HCl/H_2O_2$, $H_2SO_4/H_2O_2$ and $HNO_3$, respectively. 20nm $Al_2O_3$ layer on $SiO_2/Si$ was deposited by PA-ALD. This $Al_2O_3/SiO_2/Si(100)$ interface were characterized by capacitance-voltage characteristics and quasi-steady-state photoconductance decay method.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.