• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.2.1-2.1
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• 2011

Electrospray deposition (ESD) technique is fast finding its applicability in the field of thin film device manufacturing processes and the ease and cost efficiency attached to ESD process with possible integration with batch manufacturing technologies is the potential future of thin film device manufacturing. As the name suggests, the deposition phenomenon should solely be a spray achieved through electrostatic forces. In fact it is an imbalance between the surface forces arising because of the surface tension of the liquid to be sprayed and Maxwell stresses which are induced because of the electric field, that pull the liquid downwards from the capillary into a stable jet which further disintegrates into smaller droplets because of coulomb forces and hence a cloud of charged, mono-dispersed and extremely diminutive (sometimes up to femtolitres) droplets is achieved. The present talk is going to be exclusively about the electrospray process concepts, generation and possible applications.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 1999년도 가을 학술발표회 논문집
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• pp.437-443
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• 1999

This paper deals with the stress singularity induced at the interface corner between the viscoelastic thin film and the rigid substrate subjected to uniform temperature change. The viscoelastic film has been assumed to be thermorheologically simple. The time-domain boundary element method(BEM) has been employed to investigate the behavior of interface stresses. The order of the free-edge singularity has been obtained numerically for a given viscoelastic model. It is shown that the free-edge stress intensity factor is relaxed with time, while the order of the singularity increases with time for the viscoelastic model considered.

• 한국재료학회지
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• 제6권7호
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• pp.678-683
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• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

• Journal of Mechanical Science and Technology
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• 제18권1호
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• pp.12-19
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• 2004

Using LSM (laser scanning method) , the radius of curvature due to thermal deformation in polyimide film coated on Si substrate is measured. Since the polyimide film shows viscoelastic behavior, i.e., the modulus and deformation of the film vary with time and temperature, we estimate the relaxation modulus and the residual stresses of the polyimide film by measuring the radius of curvature and subsequently by performing viscoelastic analysis. The residual stresses relax by an amount of 10％ at 100$^{\circ}C$ and 20% at 150$^{\circ}C$ for two hours.

• 한국산학기술학회논문지
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• 제21권1호
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• pp.8-13
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• 2020

IC 패키지와 같이 두께가 수백 마이크로미터 정도로 매우 얇은 기판에서 뒤틀림 불량을 일으키는 가장 큰 원인은 응력이다. 일반적으로 응력은 기판 위에 서로 다른 물질을 적층할 때, 결정구조 및 그에 따른 열팽창 계수의 차이로 인해 발생한다. 본 연구에서는 사각형의 박막 패턴이 적층된 기판에 발생하는 응력의 거동을 수치적으로 분석하였다. 먼저 기판 변위를 구하고, 이를 이용하여 기판 변형률과 응력을 구하였다. 박막 패턴의 가장자리에 인장력이 집중된 경우, 박막 패턴의 가장자리를 중심으로 수직 응력과 전단 응력이 발생한다. 수직 응력은 박막 패턴의 가장자리와 꼭짓점 부근에 발생한다. 전단 응력도 박막 패턴의 가장자리를 중심으로 발생하나 수직 응력과는 달리 꼭짓점 부근에는 나타나지 않는다. 또한 가장자리를 중심으로 전단 응력의 크기와 방향이 바뀌는 것을 확인할 수 있었다. 박막패턴 가장자리 힘이 동일할 때, 수직 응력은 전단 응력에 비해 10배 정도의 값을 나타내었다. 이는 뒤틀림 불량을 일으키는 가장 큰 원인이 수직 응력임을 나타낸다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.239-244
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• 2017

We experimentally investigate the physical mechanism for asymmetrical degradation in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under simultaneous gate and drain bias stresses. The transfer curves exhibit an asymmetrical negative shift after the application of gate-to-source ($V_{GS}$) and drain-to-source ($V_{DS}$) bias stresses of ($V_{GS}=24V$, $V_{DS}=15.9V$) and ($V_{GS}=22V$, $V_{DS}=20V$), but the asymmetrical degradation is more significant after the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20 V) nevertheless the vertical electric field at the source is higher under the bias stress ($V_{GS}$, $V_{DS}$) of (24 V, 15.9 V) than (22 V, 20 V). By using the modified external load resistance method, we extract the source contact resistance ($R_S$) and the voltage drop at $R_S$ ($V_{S,\;drop}$) in the fabricated a-IGZO TFT under both bias stresses. A significantly higher RS and $V_{S,\;drop}$ are extracted under the bias stress ($V_{GS}$, $V_{DS}$) of (22 V, 20V) than (24 V, 15.9 V), which implies that the high horizontal electric field across the source contact due to the large voltage drop at the reverse biased Schottky junction is the dominant physical mechanism causing the asymmetrical degradation of a-IGZO TFTs under simultaneous gate and drain bias stresses.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1498-1499
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• 1998

Thin film inductors of 10 mm ${\times}$ 10 mm with spiral pattern of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their impedence characteristics and annealing after effects were investigated. After magnetic annealing, the impedence characteristics of the inductors were improved at comparatively low frequencies, but the tendencies of it for thr frequency changes were almost same. These improvement was caused by the annihilation of the internal stresses of films, Uniaxial field annealed thin film inductor had an inductance of 1000 nH, resistance of 6 $\Omega$, and quality factor of 1 at 2 MHz.

• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.35-39
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• 2010

Interfacial stress singularity induced in an analysis model consisting of the polymeric thin film and the elastic substrate has been investigated using the boundary element method. The interfacial singular stresses between the viscoelastic thin film and the elastic substrate subjected to a uniform moisture ingression are investigated for the case of a small interfacial edge crack. It is assumed that moisture effects are assumed to be analogous to thermal effects. Then, the overall stress intensity factor for the case of a small interfacial edge crack is computed. The numerical procedure does not permit calculation of the limiting case for which the edge crack length vanishes.

• 마이크로전자및패키징학회지
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• 제10권1호
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• pp.25-29
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• 2003

이 논문은 고분자 박막이 주변으로부터 수분을 흡수하게 될 때, 탄성 기판과 점탄성 박막의 계면 모서리에서 발생하는 응력 특이성을 다루고 있다. 계면에서 발생하는 응력을 조사하기 위해서 경계 요소법이 사용되고 있다. 주어진 점탄성 모델에 대해서 특이 차수가 수치적으로 계산된다. 이 논문에서 고려하고 있는 점탄성 모델에 대해서, 응력특이계수는 시간이 경과함에 따라 이완되고 있으나 특이 차수는 증가되고 있음을 보여준다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.962-965
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• 2004

In this work, thin films of amorphous silicon (a-Si) were formed on plastic substrates by sputtering deposition and crystallized using excimer laser irradiation. As the entire process is conducted at room temperature, and the laser irradiation-induced heating is confined to the thin film, the plastic substrate is not subjected to thermal stresses. The microstructure resulting from the laser irradiation was dependent on the laser irradiation energy density and the composition of the underlying buffer layers. It was found that a layer of AlN deposited as a buffer between the plastic and the a-Si film increased the endurance of the a-Si film under laser irradiation, and resulted in polycrystalline Si grains up to 100nm in diameter.