• Title/Summary/Keyword: Thin Ring

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Coverlayer Fabrication of Small Form Factor Optical Disks

  • Kim, Jin-Hong;Kim, Jong-Hwan
    • Transactions of the Society of Information Storage Systems
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    • v.1 no.2
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    • pp.188-191
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    • 2005
  • Two different coverlayers which is useful for an optical buffer and a mechanical protection made of not only UV resin but also polycarbonate coversheet were prepared on small form factor optical disks. Thin coverlayer of 10 ${\mu}m$ and thick coverlayer of 80 ${\mu}m$ were fabricated. 10 ${\mu}m$-thick coverlayer was coated using UV resin material by spin coating method for the flying optical head application. On the other hand, 80 ${\mu}m$-thick coverlayer using coversheet with the resin bonding material was prepared for the non-flying optical head application. Both cases, the thickness uniformity seem to be the primary prerequisite factor, and it was analyzed. Thickness of 10 ${\mu}m$-thick UV resin coverlayer could be controlled within ${\pm}0.2m$ range and 80 ${\mu}m$-thick coversheet could be controlled within ${\pm}3{\mu}m$ range. However, the yield of such thickness tolerance was not good. New design of metal housing holder and polycarbonate outer ring was adopted to diminish the ski-jump phenomenon. Specifically, the polycarbonate outer ring was very effective to reduce the ski-jump. However, it should be careful to maintain uniform edge between disk and ring for the perfect coverlayer.

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Gas Dynamical Evolution of Central Regions of Barred Galaxies

  • Seo, U-Yeong;Kim, Ung-Tae
    • The Bulletin of The Korean Astronomical Society
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    • v.36 no.1
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    • pp.55.1-55.1
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    • 2011
  • We investigate dynamical evolution of gas in barred galaxies using a high-resolution, grid-based hydrodynamic simulations on two-dimensional cylindrical geometry. Non-axisymmetric gravitational potential of the bar is represented by the Ferrers ellipsoids independent of time. Previous studies on this subject used either particle approaches or treated the bar potential in an incorrect way. The gaseous medium is assumed to be infinitesimally-thin, isothermal, unmagnetized, and initially uniform. To study the effects of various environments on the gas evolution, we vary the gas sound speed as well as the mass of a SMBH located at the center of a galaxy. An introduction of the bar potential produces bar substructure including a pair of dust lane shocks, a nuclear ring, and nuclear spirals. The sound speed affects the position and strength of the bar substructure significantly. As the sound speed increases, the dust lane shocks tend to move closer to the bar major axis, resulting in a smaller-size nuclear ring at the galactocentric radius of about 1 kpc. Nuclear spirals that develop inside a nuclear ring can persist only when either sound speed is low or in the presence of a SMBH; they would otherwise be destroyed by the ring material with eccentric orbits. The mass inflow rates of gas toward the galactic center is also found to be proportional to the sound speed. We find that the sound speed should be 15 km/s or larger if the mass inflow rate is to explain nuclear activities in Seyfert galaxies.

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Preparation of ATO Thin Films by DC Magnetron Sputtering (I) Deposition Characteristics (DC Magnetron Sputtering에 의한 ATO 박막의 제조 (I)증착특성)

  • Yoon, C.;Lee, H.Y.;Chung, Y.J.
    • Journal of the Korean Ceramic Society
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    • v.33 no.4
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    • pp.441-447
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    • 1996
  • Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

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The Effect of Gas Pressure on the c-axis Orientation Properties of Co-Cr Thin Film prepared by Sputtering Method (스퍼터링법으로 제작된 Co-Cr 박막에서 가스 압력이 c-축 배향성에 미치는 영향)

  • Choi, Sung-Min;Son, In-Hwan;Kim, Jae-Hwan;Kim, Kyung-Hwan
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.761-763
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    • 1998
  • In this paper, Co-Cr thin films which are known for a excellent perpendicular magnetic recording media were prepared. Changing target- substrate distance, Ar gas pressure and arriving atoms, the incident angle and c-axis orientation properties by using the facing targets sputtering system. We evaluated the c-axis dispersion angle by measu ring half-height width with Micro area X-Ray Diffractometer, measured the thickness of thin film with Ellipsometer. The magnetic properties were compared measuring in-plane squareness and perpendicular coercivity with vibrating sample Magnetometer.

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Processing and Characterization of a Direct Bonded SOI using SiO$_2$ Thin Film (SiO$_2$ 박막을 이용한 SOI 직접접합공정 및 특성)

  • 신동운;최두진;김긍호
    • Journal of the Korean Ceramic Society
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    • v.35 no.6
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    • pp.535-542
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    • 1998
  • SOI(silicon oninsulator) was fabricated through the direct bonding of a hydrophilized single crystal Si wafer and a thermally oxidized SiO2 thin film to investigate the stacking faults in silicon at the Si/SiO2 in-terface. At first the oxidation kinetics of SiO2 thin film and the stacking fault distribution at the oxidation interface were investigated. The stacking faults could be divided into two groups by their size and the small-er ones were incorporated into the larger ones as the oxidation time and temperature increased. The den-sity of the smaller ones based critically lower eventually. The SOI wafers directly bonded at the room temperature were annealed at 120$0^{\circ}C$ for 1 hour. The stacking faults at the bonding and oxidation interface were examined and there were anomalies in the distributions of the stacking faults of the bonded region to arrange in ordered ring-like fashion.

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Solution-Processed Zinc-Tin Oxide Thin-Film Transistors for Integrated Circuits

  • Kim, Kwang-Ho;Park, Sung-Kyu;Kim, Yong-Hoon;Kim, Hyun-Soo;Oh, Min-Suk;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.534-536
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    • 2009
  • We have fabricated solution-processed zinc-tin oxide thin film transistors (TFTs) and simple circuits on glass substrates. We report a solutionprocessed zinc-tin oxide TFTs on silicon wafer with mobility greater than 9 $cm^2/V{\cdot}s$ (W/L = 100/5 ${\mu}m$) and threshold voltage variation of less than 1 V after bias-stressing. Also, we fabricated solution-processed zinc-tin oxide circuits including inverters and 7-stage ring oscillators fabricated on glass substrates using the developed zinc-tin oxide TFTs.

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Extraction of Effective Permittivity and Permeability of Periodic Metamaterial Cells (주기 구조 Metamaterial의 유효 유전율과 투자율 추출)

  • Lee, Dong-Hyun;Park, Wee-Sang
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.8
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    • pp.60-68
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    • 2008
  • The complex permittivity and permeability of various periodic metamaterial (MTM) cells are extracted by simulating a fictitious rectangular waveguide consisting of PEC and PMC walls. The shapes of the MTM cells include a thin wire (TW), a single split-ring resonator (SSRR), a double SRR (DSRR), a modified SRR, and a combined structure of the TW and the DSRR. The TW falls on a negative-$\varepsilon$/positive-$\mu$ region, the SRRs on a positive-$\varepsilon$/negative-$\mu$ region, and the combined structure on a negative-$\varepsilon$/negative-$\mu$ region. We also investigate how the permeability and permeability are affected by the dimension parameters of the MTM cells. Another extraction technique utilizing time domain signals is developed overcoming some limitations that the waveguide technique can not handle.

First Report of Waitea Ring Patch caused by Waitea circinata on Zoysiagrass (Zoysiagrass에 Waitea circinata에 의한 Waitea Ring Patch 발생)

  • Kim, Kyung-Duck;Hong, Sung-Chul;Jang, Kong-Man;Han, Muho;Pyee, Jae-Ho;Park, Dae-Sup
    • Weed & Turfgrass Science
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    • v.3 no.4
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    • pp.378-381
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    • 2014
  • A new pathogen was isolated from zoysiagrass-planted park of Jeju island in 2014. Symptoms appeared a type of irregular patches occurring brownish leaf blight, followed by stem and crown rot. The symptom was very similar to that of large patch caused by Rhizoctonia solani, a well-known devastating zoysiagrass disease. The isolate showed thin orange-colored mycelia and screlotia were formed on the medium based on cultural characteristics. The causal agent of the disease was finally identified as Waitea circinata by analysis of ribosomal DNA. On the inoculation test, Waitea circinatae showed strong pathogenicity to the zoysiagrass. The mycelia were obviously observed in the inoculated tissues. This is the first report of Waitea ring patch caused by Waitea circinata on zoysiagrass.

Three-dimensional Vibration Analysis of Circular Rings with an Elliptical or Circular Cross-section (타원형 또는 원형 단면을 가진 원형 링의 3차원적 진동해석)

  • Shim, Hyun-Ju;Woo, Ha-Young;Kang, Jae-Hoon
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.16 no.10 s.115
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    • pp.1024-1035
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    • 2006
  • A three-dimensional (3-D) method of analysis is presented for determining the free vibration frequencies and mode shapes of thick, complete (circumferentially closed), circular rings with an elliptical or circular cross-section. Displacement components $u_r,\;u_\theta\;and\;u_z$ in the radial, circumferential, and axial directions, respectively, are taken to be periodic in ${\theta}$ and in time, and algebraic polynomials in the r and z directions. Potential (strain) and kinetic energies of the circular rings are formulated, and upper bound values of the frequencies are obtained by minimizing the frequencies. As the degree of the polynomials is increased, frequencies converge to the exact values. Convergence to four-digit exactitude is demonstrated for the first five frequencies of the rings. Novel numerical results are presented for the circular rings having an elliptical cross-section based upon 3-D theory. Comparisons are also made between the frequencies from the present 3-D Ritz method and ones obtained from thin and thick ring theories, experiments, and another 3-D method.

A Study on the Electrical Characteristics of Organic Thin Film Transistor using Photoacryl as Gate Dielectric Layer (Photoacryl을 게이트 절연층으로 사용한 유기 박막트랜지스터의 전기적 특성에 관한 연구)

  • 김윤명;표상우;김준호;신재훈;김영관;김정수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.2
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    • pp.110-118
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    • 2002
  • Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active eletronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039∼0.17 ㎠/Vs, on-off current ratio is 10$\^$6/, and threshold voltage is -7V. And here we report the study of driving emitting, Ir(ppy)$_3$, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ooy)$_3$ doped in BCP/BCP/Alq$_3$/Li:Al/Al and OTFT with a structure of inverted-stagged Al(gate electrode)/photoacry(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITP patterned glass substrate. The electrical characteristics are turn-on voltage of -10V, and maximum luminance of about 90 cd/㎡. Device characteristics were quite different with that of only OELD.