• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.315-315
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• 2016

The hydrogenated amorphous silicon (a-Si:H) thin film solar cells using n/Al or n/Ag/Al back reflector have low short circuit current (Jsc) due to high absorption coefficients of Al or work function difference between n-layer and the metal. In this article, we utilized aluminum doped zinc oxide (AZO) to raise the internal reflectance for the improvement of short current density (Jsc) in a-Si:H thin film solar cells. It was found that there was a slight increase in the reflectance in the long wavelength range at the process temperature of 125oC due to improved crystalline quality of the AZO back reflector. The optical band gap (Eg) and work function were affected by the temperature and so did the internal reflectance. The increased internal reflectance within the solar cell resulted in Jsc of 14.94 mA/cm2 and the efficiency of 8.84%. Jsc for the cell without back reflector was 12.29 mA/cm2.

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.68-73
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• 2020

Due to its favorable optical properties, Cu₂SnS₃ (CTS) is a promising material for thin film solar cells. Doping, which modifies the absorber properties, is one way to improve the conversion efficiency of CTS solar cells. In this work, CTS solar cells with selenium doping were fabricated on a flexible substrate using sputtering method and the effect of doping on the properties of CTS solar cells was investigated. In XRD analysis, a shift in the CTS peaks can be observed due to the doped selenium. XRF analysis confirmed the different ratios of Cu/Sn and (S+Se)/(Cu+Sn) depending on the amount of selenium doping. Selenium doping can help to lower the chemical potential of sulfur. This effectively reduces the point defects of CTS thin films. Overall improved electrical properties were observed in the CTS solar cell with a small amount of selenium doping, and a notable conversion efficiency of 1.02 % was achieved in the CTS solar cell doped with 1 at% of selenium.

• Journal of the Korean Electrochemical Society
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• v.14 no.2
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• pp.61-70
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• 2011

Thin film solar cells with chalcopyrite $CuInSe_2/Cu(In,Ga)Se_2$ absorber materials, commonly known as "CIS/CIGS solar cells" have recently attracted significant research interest as a potential alternative energy-harvesting system for the next generation. Among the different deposition techniques available for the CIGS absorber layer, electrodeposition is an effective and low cost alternative to vacuum based deposition methods. This article reviews progress in the area of CIGS solar cells with an emphasis on electrodeposited absorber layer. Existing challenges in fabrication of stoichiometric absorber layer are highlighted.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.11
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• pp.104-108
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• 2012

Flexible organic thin film solar cell device with Bulk Hetero-Junction (BHJ) structure was fabricated with blended conjugated polymer of PCDTBT : $PC_{71}BM$ as active layer. Surface of ITO anode for the organic solar cell device was treated with ozone. The organic solar cell device with bare ITO showed short circuit current density ($J_{sc}$) of $8.2mA/cm^2$, open-circuit voltage ($V_{oc}$) of 0.73V, fill factor (FF) of 0.36, and power conversion efficiency (PCE) of 2.16%, respectively. The organic solar cell device with ozone treated ITO anode revealed distinctively improved performance parameters:$J_{sc}$ of $9.8mA/cm^2$, $V_{oc}$ of 0.82V, FF of 0.43, PCE(${\eta}$) of 3.42%.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.43-46
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• 2012

Organic solar cell devices were fabricated using poly[9-(1-octylnonyl)-9H-carbazole-2.7-diyl]-2.5-thiophenediyl-2.1.3-benzothiadiazole-4.7-diyl-2.5-thiophenediyl] PCDTBT/ [6,6]-phenyl $C_{71}$ butyric acid methyl ester (PC71BM) active layer deposited by spin coating. Moreover, the relationship between solar cell performance and buffer layer thickness was investigated by spin coating speed and AFM imaging of the buffer layer surface. The performance of the organic solar cell with spin-coated active layer was then evaluated, and the power conversion efficiency of the solar cell was determined to be > 5%.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.67-72
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• 2023

In this paper, a dye-sensitized solar cell (DSSC), one of the representative third-generation solar cells with eco-friendly materials and processes compared to other solar cells, was modeled using MATLAB/Simulink. The simulation was conducted by designating values of series resistance, parallel resistance, light absorption coefficient, and thin film electrode thickness, which are directly related to the efficiency of dye-sensitized solar cells, as arbitrary experimental values. In order to analyze the performance of dye-sensitized solar cells, the optimal value among each parameter experimental value related to efficiency was found using formulas for fill factor (FF) and conversion efficiency.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.108-113
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• 2016

III-V compound semiconductor based thin film solar cells promise relatively higher power conversion efficiencies and better device reliability. In general, the thin film III-V solar cells are fabricated by an epitaxial lift-off process, which requires an $Al_xGa_{1-x}As$ ($x{\geq}0.8$) sacrificial layer and an inverted solar cell structure. However, the device performance of the inversely grown solar cell could be degraded due to the different internal diffusion conditions. In this study, InGaP/GaAs double-junction solar cells are inversely grown by MOCVD on GaAs (100) substrates. The thickness of the GaAs base layer is reduced to minimize the thermal budget during the growth. A wide band gap p-AlGaAs/n-InGaP tunnel junction structure is employed to connect the two subcells with minimal electrical loss. The solar cell structures are transferred on to thin metal films formed by Au electroplating. An AlAs layer with a thickness of 20 nm is used as a sacrificial layer, which is removed by a HF:Acetone (1:1) solution during the epitaxial lift-off process. As a result, the flexible InGaP/GaAs solar cell was fabricated successfully with an efficiency of 27.79% under AM1.5G illumination. The efficiency was kept at almost the same value after bending tests of 1,000 cycles with a radius of curvature of 10 mm.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.171-171
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• 2012

We have studied the effects of plasma treatments on CdS buffer layers in CIGS thin film solar cells. The CdS layers were deposited on CIGS films by chemical bath deposition (CBD) method. The RF plasma treatments of the CdS thin films were performed with Ar, $O_2 and $N_2 gases, respectively. After plasma treatments, the solar cells with Al:ZnO/i-ZnO/CdS/CIGS structures were fabricated. The surface properties of the CdS/CIGS thin films after plasma treatments were investigated with SEM, EDX and AFM measurements. The electrical properties of manufactured solar cell were discussed with the results of current-voltage measurements. The plasma treatments have a strong influence on the open circuit voltage (VOC) and the fill factor of the solar cells. Finally, a correlation between the surface properties of CdS layer and the efficiencies of the CIGS thin film solar cells is discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.465-466
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• 2009

Dye-sensitized Solar Cell (DSC) is a new type of solar cell by using photocatalytic properties of $TiO_2$. The electric potential distribution in DSCs has played a major role in the operation of such cells. $TiO_2$ thin films were deposited on the ITO substrate by Nd:YAG Pulsed Laser Deposition(PLD) at room temperature and post-deposition annealing at $500^{\circ}C$ in flowing $O_2$ atmosphere for 1hour. The structural properties of $TiO_2$ thin films have investigated by X-ray diffraction(XRD). We manufactured DSC unit cells then I-V and efficiency were tested by solar simulator.

• Journal of the Korean Vacuum Society
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• v.22 no.4
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• pp.211-217
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• 2013

Two types of organic thin film solar cell devices with bulk hetero-junction (BHJ) structure were fabricated on plastic substrates using conjugated polymers of $PCDTBT:PC_{71}BM$ and $PTB7:PC_{71}BM$ blended as active channel layer. Time-variant characteristics of the organic thin film solar cell devices were investigated: short circuit current density ($J_{SC}$); open circuit voltage ($V_{OC}$); ; fill factor (FF); power conversion efficiency (PCE, ŋ). All the performance parameters were degraded by progress of the measurement time, while $V_{OC}$ showed the most drastic decrease with time. Possible factors to cause the time-variant alteration of performance parameters were discussed to be clarified.