• 한국재료학회지
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• 제17권2호
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• pp.121-123
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• 2007

Energy harvesting from the vibration through the piezoelectric effect has been studied for powering the wireless sensor node. As piezoelectric unimorph cantilever structure can transfer low vibration to large displacement, this structure was commonly deployed to harvest electric energy from vibrations. Piezoelectric unimorph structure was composed of small stiff piezoelectric ceramic on the large flexible substrate. As there is the large Young's modulus difference between the flexible substrate and stiff piezoelectric ceramic, flexible substrate could not homogeneously transfer the vibration to stiff piezoelectric ceramic. As a result, most piezoelectric ceramics had been broken at the certain point. We measured and analyzed the stress distribution on the piezoelectric ceramic on the cantilever.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• 센서학회지
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• 제17권3호
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• pp.178-182
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• 2008

Planar type micro catalytic combustible gas sensor was developed by using nano crystalline $SnO_2$ Pt thin film as micro heater was deposited by thermal evaporation method on the alumina substrate. The thickness of the Pt heater was around 160 nm. The sensor showed high reliability with prominent selectivity against various gases(Co, $C_3H_8,\;CH_4$) at low operating temperature($156^{\circ}C$). The sensor with nano crystalline $SnO_2$ showed higher sensitivity than that without nano crystalline $SnO_2$. This can be explained by more active adsorption and oxidation of hydrogen by nano crystalline $SnO_2$ particles. The present planar-type catalytic combustible hydrogen sensor with nano crystalline $SnO_2$ is a good candidate for detection of hydrogen leaks.

• 한국정밀공학회지
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• 제29권11호
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• pp.1164-1169
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• 2012

This paper presents a study of an integrated infrared (IR) photo sensor for display application. We fabricated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and hydrogenated amorphous silicon germanium thin film transistor (a-SiGe:H TFT) which were bottom gate structure. We investigated the dependence of a-SiGe:H TFT characteristics on incident wavelengths. We proposed photo sensor which responded to wavelengths of IR region. Proposed pixel circuit of photo sensor was consists of switch TFT and photo TFT, and one capacitor. We developed integrated photo sensor circuit and investigated the performance of the proposed sensor circuit according to the input wavelengths. The developed photo sensor circuit with a-SiGe:H TFT was suitable for IR.

• 센서학회지
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• 제17권5호
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• pp.329-337
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• 2008

Simple, small and portable oxygen sensors were fabricated by tape casting technique. Yttria stabilized zirconia containing cordierite ceramics (YSZC) were used as a porous diffused layer of oxygen in pumping cell. Yttria stabilized zirconia (YSZ) solid electrolyte, YSZC porous diffusion layer and heater-patterned ceramic sheets were prepared by co- firing method. Limit current characteristics and the linear relationship of current to oxygen concentration were observed. Viscosity variation of the slurries both YSZ and YSZC showed a similar behavior, but micro pores in the fired sheet were increased with increasing of the cordierite amount. Molecular diffusion was dominated due to the formation of large pores in porous diffusion layer. The plateau range of limit current in porous-type oxygen sensor was narrow than the one of aperture-type oxygen sensor. However limit current curve was appeared in porous-type oxygen sensor even at the lower applied voltage. The plateau range of limit-current was widen as increasing the thickness of porous diffusion layer of the YSZ containing cordierite. Measuring temperature of $600{\sim}650^{\circ}C$ was recommended for limit-current oxygen sensor. Porous diffusion layer-type oxygen sensor showed faster response than the aperture-type one and was stable up to 30 days running without any crack at interface between the layers.

• 한국정보통신학회논문지
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• 제10권1호
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• pp.111-116
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• 2006

본 연구에서는 비정질 실리콘 박막 트랜지스터를 스위칭소자로 포토센서를 구동 하는 방식의 이미지 센서를 구현하고자 한다. 먼저 PECVD(Plasma Enhanced Chemical Vapor Deposition) 진공 증착장비로 최적의 비정질실리콘 박막을 형성하고, 이 박막을 이용하여 스위칭소자인 박막트랜지스터와 광전변환소자인 광다이오드를 제조한다. 또한 이들을 결합하여 이미지 센서를 형성하고 그 특성 및 동작을 분석하고 최적의 동작특성을 이끌 수 있는 밀착이미지 센서를 제조한다. 제작한 이미지 센서를 측정한 결과 광전변환소자인 photodiode는 암전류의 경우 $\~10^{-l2}A$정도였으며, 광전류 $\~10^{-9}A$정도로서 Iphoto/Idark ${\ge}10^3$ 이상을 이루어 좋은 광전변환 특성을 갖고 있었다. 또한 a-Si:H TFT의 경우 Ioff ${\le}10^{-l2}A$, Ion ${\le}10^{-6}A$ 으로서 Ion/Ioff ${le}10^6$ 이상을 나타냈으며 Vth는 $2\~4$ volts였고, Id는 수 ${\mu}A$ 정도로 photodiode를 스위치하기에 충분한 전류-전압특성을 나타내고 있다. 이미지 센서 전체 동작 특성을 측정하기 위하여 photodiode의 ITO쪽에 -5volts의 역 bias를 가한 상태에서 TFT의 gate에 $70\;{\mu}sec$의 pulse를 가하여 photodiode에서 생성된 광전류 와 암전류를 측정하였다. 이렇게 하여 측정된 전압은 암상태에서 수십 mvolts이고, 광상태에서는 수백 mvolts로 나타나 우수한 이미지센서 특성을 갖고 있음을 확인하였다.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1060-1064
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• 2002

We have studied the effect of crystallization temperature, composition and film thickness, which are the fundamental processing parameters of lead zirconate titanate(PZT) thin film fabrication, in the respect of the piezoelectric properties by our pneumatic loading method(PLM). A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. Even though the piezoelectric properties of thin films are very critical factors in the micro-electro mechanical system(MEMS) and thin film sensor devices, a few reports for the piezoelectric characterization are provided for the last decade unlikely the bulk piezoelectric devices. We have found that the piezoelectric properties of thin films are improved as the increase of crystallization temperature up to 750$\^{C}$ and this behavior can be also explained by the analysis of dielectric polarization hysteresis loop, X-ray diffraction and scanning electron microscopy. The effect of Zr/Ti composition has been also studied. This gives us the fact that the maximum piezoelectricity is found near Morphotropic Phase Boundary(MPB) as bulk PZT system does.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.470-474
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pressure sensors, in which the sensing elements were deposited on SuS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition(300$\^{C}$, 3 hr) in Ar-10%N$_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, ρ=1147.65 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=186ppm/$\^{C}$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20nA and the maximum non-linearity is 0.4%FS and hysteresis is less than 0.2%FS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.737-740
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pessure sensors, which the sensing elements were deposited on SUS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500${\AA}$ and annealing condition(300$^{\circ}C$, 3 hr) in Ar-10 %N$_2$deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20 mA and the maximum non-linearity is 0.4 %FS and hysteresis is less than 0.2 %FS.

• 한국항공우주학회지
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• 제31권2호
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• pp.51-56
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• 2003

압전필름센서는 우수한 동적 감지 특성을 갖고 있어 복합재 구조의 저속충격을 모니터링하는데 유용하게 사용될 수 있다. 복합재 샌드위치 보에 대한 충격응답함수를 유도하였으며, 이를 충격시험와 비교하였따. 충격시험은 손상이 발생하지 않는 저에너지 조건에서 계측장치가 부착된 낙하식 충격시험기를 이용하여 수행하였다. 충격하중에 으한 샌드위치보의 거동을 예측하는 정방향 문제와 압전필름센서 신호로부터 충격력을 복원하는 역방향 문제에서 시험과 해석의 결과는 잘 일치하였다. 본 연구를 통하여 압전필름센서를 이용한 복합재 샌드위치 구조의 저속충격 모니터링 가능성을 확인하였다.