• Title/Summary/Keyword: Thickness of the soldered layer

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A Study for Joining of Silicon Nitride with Crystallized Glass Solder of $SiO_2-Al_2O_3-MgO$ System ($SiO_2-Al_2O_3-MgO$계 결정화 유리 솔더에 의한 질화규소의 접합에 관한 연구)

  • 안병국
    • Journal of Welding and Joining
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    • v.21 no.1
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    • pp.107-113
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    • 2003
  • Joining of $Si_3N_4$ to $Si_3N_4$ with crystallized glass solder was studied. $SiO_2-Al_2O_3-MgO$ glass with $P_2O_5$ as a crystallizing reagent was used as a solder. To improve the hish temperature toughness of joined specimen, two stage heat treatment was applied to Joined sample for the crystallization of joined layer, Two factors, i.e. thickness of soldered layer and crystallization were taken and thier effects on joining strength were investigated by a SEM-EDX observation of joined interface and bending strength both at room and elevated temperatures. Obtained results are summarized as follows: (1) Nitrogen diffused from $Si_3N_4$ to solder during the Joining process. Average amount of nitrogen in soldered layer depended on the thickness of the soldered layer and increased with decrease of the thickness. (2) Joining strength of the specimen having a thinner soldered layer was stronger than that of thicker layer. This can be mainly attributed to the difference of the nitrogen content in the soldered layer. (3) Higher content of nitrogen in solder brought forth higher viscosity of the solder. Hence the crystallization of the solder become more difficult in thinner layer of the solder than thicker one. (4) Thus, the effect of crystallization was evaluated mostly by the thicker layer specimen. Crystallization of soldered layer improved markedly the fracure strength of joining at higher temperatures than the softening temperature of glass solder.

A Study on the Fluxless Bonding of Si-wafer/Solder/Glass Substrate (Si 웨이퍼/솔더/유리기판의 무플럭스 접합에 관한 연구)

  • ;;;N.N. Ekere
    • Journal of Welding and Joining
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    • v.19 no.3
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    • pp.305-310
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    • 2001
  • UBM-coated Si-wafer was fluxlessly soldered with glass substrate in $N_2$ atmosphere using plasma cleaning method. The bulk Sn-37wt.%Pb solder was rolled to the sheet of $100\mu\textrm{m}$ thickness in order to bond a solder disk by fluxless 1st reflow process. The oxide layer on the solder surface was analysed by AES(Auger Electron Spectroscopy). Through rolling, the oxide layer on the solder surface became thin, and it was possible to bond a solder disk on the Si-wafer with fluxless process in $N_2$ gas. The Si-wafer with a solder disk was plasma-cleaned in order to remove oxide layer formed during 1st reflow and soldered to glass by 2nd reflow process without flux in $N_2$ atmosphere. The thickness of oxide layer decreased with increasing plasma power and cleaning time. The optimum plasma cleaning condition for soldering was 500W 12min. The joint was sound and the thicknesses of intermetallic compounds were less than $1\mu\textrm{m}$.

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Effect of Fe, Mn Contents of Al-9wt%Si-0.3wt%Mg Alloys on the Thickness of Die Soldering Reaction Layer for SKD61 Die Steel (SKD61 금형강의 소착 반응층 두께에 미치는 Al-9wt%Si-0.3wt%Mg 합금의 Fe, Mn 영향)

  • Kim, Heon-Joo;Cho, Chi-Man;Jeong, Chang-Yeol
    • Journal of Korea Foundry Society
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    • v.29 no.4
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    • pp.169-175
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    • 2009
  • Effect of iron and manganese contents on die soldering reaction has been studied in Al-9wt.%Si-0.3wt.%Mg alloy. Ternary ${\alpha}_{hcp}-Al_8Fe_2Si$ and ${\alpha}_{bcc}-Al_8Fe_2Si$ intermetallic compounds formed by interaction diffusion between Al-Si-Mg system alloy melt and SKD61 die steel surface. Thickness of soldering reaction layer in die steel surface decreased as Fe and Mn contents of the melts increased : When Fe content of Al-9wt.%Si-0.3wt.%Mg melts at constant 0.5wt%Mn content was 0.15wt.%, 0.45wt.% and 0.6wt.%, thickness of soldered layer of each alloy was $64.5{\mu}m,\;57.3{\mu}m$ and $46.9{\mu}m$ respectively. For Mn content of the alloy melts at constant 0.45wt.%Fe content was 0.30wt.%, 0.50wt.% and 0.70wt.%, thickness of soldered layer of each alloy was $66.1{\mu}m,\;57.3{\mu}m$ and $48.3{\mu}m$ respectively.

Effect of Cu Containing Solders on Shear Strength of As-soldered BGA Solder Joints (BGA 솔더 조인트의 전단강도에 미치는 Cu 첨가 솔더의 영향)

  • 신창근;정재필;허주열
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.2
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    • pp.13-19
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    • 2000
  • Shear strengths of BGA solder joints on Cu pads were studied for Cu-containing Sn (0, 1.5, and 2.5 wt.% Cu) and Sn-40Pb (0 and 0.5wt.% Cu) solders, with emphasis on the roles of the Cu-Sn intermetallic layer thickness and the roughness of the interface between the intermetalic layer and solder. The shear strength test was performed for as-soldered solder joints with various soldering reaction times up to 4 min. The addition of Cu to the pure Sn solder results in an enhanced growth of the intermetallic layer whereas the effect of Cu addition to the Sn-40Pb solder is primarily on the reduction of the roughness of the intermetallic/solder interface. The critical thickness of the intermetallic layer for a maximum shear strength depends on the solder materials, which was measured to be ~ 2.3 $\mu\textrm{m}$ for Sn-Cu solders and ~ 1.2 $\mu\textrm{m}$ for Sn-Pb-Cu solders. The shear strength at the critical intermetallic layer thickness seems to increase as the intermetallic/solder interface becomes rougher. This is in accordance with the observation that the sheared fracture occurred initially within the solder tends to shift towards the intermetallic/solder interface as the intermetallic layer grows above the critical thickness.

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Effect of Cu-contained solders on shear strength of BGA solder joints

  • Shin, Chang-Keun;Huh, Joo-Youl
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.04a
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    • pp.73-73
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    • 2000
  • Shear strength of BGA solder joints on Cu pad was studied for Cu-contained Sn n.5 a and 2.5wt.% Cu) and Sn-Pb (o.5wt.% Cu) solders, with emphasis on the roles of the C Cu-Sn intermetallic layer thickness and the roughness of the interface between the i intermetallic layer and solder. The shear strength test was performed both for a as-soldered s이der joints with soldering reaction times of 1, 2, 4 min and for aged s이der j joints at 170 C up to 16 days. The Cu addition to both pure Sn and eutectic Sn-Pb s solders increased the intermetallic layer thickness at both soldering and aging t temperatures. The Cu addition also resulted in changes in the roughness of the interface b between the intermetallic layer and solder at as-soldered states. With increasing Cu c content. the interface roughened for Sn-Cu solders whereas it flattened for Sn-Pb-Cu s solders. The shear fractures in all solder joints investigated were confined in the bulk s solder rather than through the intermetallic layer. Therefore, the effect of Cu content in s solders on the shear strength of the solder joints was primarily attributed to its i influence on the micros$\sigma$ucture of bulk solder, such as the size and spatial distributions of CU6Sn5 precipitates. In addition, the critical intermetallic layer thickness for a m maximum shear strength seemed to depend on the Cu content in bulk solder.older.

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A Study on the Relationship between Factors Affecting Soldering Characteristics and Efficiency of Half-cell Soldering Process with Multi-wires (Half-cell 기반 multi-wires 접합 공정에서 접합 특성에 영향을 주는 요인과 효율의 상관관계 연구)

  • Kim, Jae Hun;Son, Hyoung Jin;Kim, Sung Hyun
    • Current Photovoltaic Research
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    • v.7 no.3
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    • pp.65-70
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    • 2019
  • As a demand of higher power photovoltaic modules, shingled, multi-busbar, half-cell, and bifacial techniques are developed. Multi-busbar module has advantage for large amount of light havesting. And, half-cell is high power module for reducing resistive losses and higher shade tolerance. Recently, researches on multi-busbar is focused on reliability according to adhesion and intermetallic compound between Sn-Pb solder and Ag electrode. And half-cell module is researched to comparing with full-sized cell module for structure difference. In this study, we investigated the factors affecting to efficiency and adhesion of multi-wires half-cell module according to wire thickness, solder thickness, and flux. The results of solar simulator and peel test was that peel strength and efficiency of soldered cell is not related. But samples with flux including high solid material showed high efficiency. The results of FE-SEM and EDX line scan on cross-section between wire and Ag electrode for different flux showed thickness of solder joint between wire and Ag electrode is increasing through solid material increasing. Flux including high solid material would affect to solder behavior on Ag electrode. Higher solid material occurred lower growth of IMC layer because solder permeate to sider of wire ribbon than Ag electrode. And it increased fill factor for high efficiency. In soldering process, amount of solid material in flux and solder thickness are the factor related with characteristic of soldered photovoltaic cell.

Fluxless Plasma Soldering with Different Thickness of UBM Layers on Si-Wafer (Si 웨이퍼의 UBM층 도금두께에 따른 무플럭스 플라즈마 솔더링)

  • 문준권;강경인;이재식;정재필;주운홍
    • Journal of the Korean institute of surface engineering
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    • v.36 no.5
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    • pp.373-378
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    • 2003
  • With increasing environmental concerns, application of lead-free solder and fluxless soldering process have been taken attention from the electronic packaging industry. Plasma treatment is one of the soldering methods for the fluxless soldering, and it can prevent environmental pollution cased by flux. On this study fluxless soldering process under $Ar-H_2$plasma using lead free solders such as Sn-3.5 wt%Ag, Sn-3.5 wt%Ag-0.7 wt%Cu and Sn-37%Pb for a reference was investigated. As the plasma reflow has higher soldering temperature than normal air reflow, the effects of UBM(Under Bump Metallization) thickness on the interfacial reaction and bonding strength can be critical. Experimental results showed in case of the thin UBM, Au(20 nm)/Cu(0.3 $\mu\textrm{m}$)/Ni(0.4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), shear strength of the soldered joint was relatively low as 19-27㎫, and it's caused by the crack observed along the bonded interface. The crack was believed to be produced by the exhaustion of the thin UBM-layer due to the excessive reaction with solder under plasma. However, in case of thick UBM, Au(20 nm)/Cu(4 $\mu\textrm{m}$)/Ni(4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), the bonded interface was sound without any crack and shear strength gives 32∼42㎫. Thus, by increasing UBM thickness in this study the shear strength can be improved to 50∼70%. Fluxed reflow soldering under hot air was also carried out for a reference, and the shear strength was 48∼52㎫. Consequently the fluxless soldering with plasma showed around 65∼80% as those of fluxed air reflow, and the possibility of the $Ar-H_2$ plasma reflow was evaluated.

Influence of Ag Precoating of $Bi_{2212}$ Superconductor-In Base Solder Soldering ($Bi_{2212}$ 초전도체와 In 계열 solder의 soldering에서 Ag precoating의 영향)

  • Jang Ji-Hoon;Kim Sang-Hyun;Shin Seung-Yong;Lee Yong-Chul;Kim Chan-Joong;Hyun Ok-Bae;Park Hae-Woong
    • Journal of the Korean institute of surface engineering
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    • v.39 no.2
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    • pp.57-63
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    • 2006
  • In this study, In-base solder was applied to the interface between $Bi_2Sr_2Ca_1Cu_2O_x(Bi_{2212})$ superconductor and Cu-Ni shunt metal at the temperature lower than $150^{\circ}C$. Most of the cases, $Bi_{2212}$ superconductor was precoated with Ag by electroplating in order to improve the contact properties of the solder layer. When the superconductor was directly soldered on to the superconductor, the solder was easily separated without external force. The shear strength of the contact between superconductor and shunt metal increased from 69.2 kgf to 74.4 kgf and 80.1 kgf, as the current density of the Ag electroplating was changed from 63 mA to 96 mA and 126 mA, respectively. The contact strength also increased to 49.9 kgf and 69.2 kgf when thickness of the electroplated Ag layer increased to $5{\mu}m$ and $10{\mu}m$, reapectively.

Behavior of Vibration Fracture for Sn-Ag-Cu-X Solders by Soldering (Sn-Ag-Cu-X 무연솔더로 솔더링 된 접합부의 진동파괴 거동)

  • Jin, Sang-Hun;Kang, Nam-Hyun;Cho, Kyung-Mox;Lee, Chang-Woo;Hong, Won-Sik
    • Journal of Welding and Joining
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    • v.30 no.2
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    • pp.65-69
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    • 2012
  • Environmental and health concerns over the lead have led to investigation of the alternative Pb-free solders to replace commonly used Pb-Sn solders in microelectronic packaging application. The leading candidates for lead-free solder alloys are presently the near eutectic Sn-Ag-Cu alloys. Therefore, extensive studies on reliability related with the composition have been reported. However, the insufficient drop property of the near eutectic Sn-Ag-Cu alloys has demanded solder compositions of low Ag content. In addition, the solder interconnections in automobile applications like a smart box require significantly improved vibration resistance. Therefore, this study investigated the effect of alloying elements (Ag, Bi, In) on the vibration fatigue strength. The vibration fatigue was conducted in 10~1000Hz frequency and 20Grms. The interface of the as-soldered cross section close to the Cu pad indicated the intermetallic compound ($Cu_6Sn_5$) regardless of solder composition. The type and thickness of IMC was not significantly changed after the vibration test. It indicates that no thermal activities occurred significantly during vibration. Furthermore, as a function of alloying composition, the vibration crack path was investigated with a focus on the IMCs. Vibration crack was initiated from the fillet surface of the heel for QFP parts and from the plating layer of chip parts. Regardless of the solder composition, the crack during a vibration test was propagated as same as that during a thermal fatigue test.