• 제목/요약/키워드: Thickness dependence

검색결과 499건 처리시간 0.029초

Photocatalytic Behavior of TiO2 Films : Thickness and Roughness Dependence

  • Kim, Hark Jin;Yoo, Seon Mi;Yu, Sora;Lee, Wan In
    • Rapid Communication in Photoscience
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    • 제2권1호
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    • pp.1-8
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    • 2013
  • Transparent $TiO_2$ films in various thicknesses were prepared by sol-gel and MOCVD method, respectively, and their photocatalytic activities in decomposing gaseous 2-propanol were evaluated. The surfaces and grain structures of the prepared films were characterized by FESEM, XRD, and AFM. It was found that the photocatalytic activities of $TiO_2$ films were greatly dependent on the film thickness and surface roughness: The photocatalytic activity increases with the increase of film thickness, while it decreases with the increase of surface roughness. We have proposed that these phenomena originate from the transfer of photogenerated electron and hole pairs from the bulk to the surface of $TiO_2$ film. Several experimental evidences supporting this mechanism have also been provided.

PZT/Epoxy (1-3형) 복합재료의 두께변화에 따른 압전특성 (Piezoelectric Properties on the Thickness of Specimens with PZT/Epoxy Composite Materials of 1-3 Connectivity)

  • 김용혁;김호기;김진수;이덕출
    • 한국세라믹학회지
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    • 제25권1호
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    • pp.7-14
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    • 1988
  • In this paper, piezoelectric composite materials of 1-3 connectivity were prepared by using "dicing-filling" technique with PZT ceramics and epoxy polymers, and the dependence of piezoelectric properties on the thickness of specimens was investigated. In case that the PZT volume percent is 18.1%, according to an increment of thickness, the dielectric constant of composites( 33) is unchangeable, which is about 200, the piezoelectric coefficient (d33) is somewhat increased, which is about 240-280 (PC/N) and the electromechanical coupling factor of thickness mode(kt) is proportioned, but radial mode(kp) is constant.

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반사방지막 태양전지의 I-V특성에 대한 인공신경망 모델링 (I-V Modeling Based on Artificial Neural Network in Anti-Reflective Coated Solar Cells)

  • 홍다인;이종환
    • 반도체디스플레이기술학회지
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    • 제21권3호
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    • pp.130-134
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    • 2022
  • An anti-reflective coating is used to improve the performance of the solar cell. The anti-reflective coating changes the value of the short-circuit current about the thickness. However, the current-voltage characteristics about the anti-reflective coating are difficult to calculate without simulation tool. In this paper, a modeling technique to determine the short-circuit current value and the current-voltage characteristics in accordance with the thickness is proposed. In addition, artificial neural network is used to predict the short-circuit current with the dependence of temperature and thickness. Simulation results incorporating the artificial neural network model are obtained using MATLAB/Simulink and show the current-voltage characteristic according to the thickness of the anti-reflective coating.

Coating 렌즈에서 박막의 균일성 평가 방법 및 적용 (Uniformity estimation mathod and application of thin film in Coating lenses)

  • 김용근;박상안
    • 한국안광학회지
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    • 제7권2호
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    • pp.175-180
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    • 2002
  • 렌즈의 thin film 균일성을 평가하기 위하여 spctrophotometer를 이용한다. 렌즈의 중심 중간, edge 등의 지점에서 파장의존상의 반사율을 측정하여 반사율 spectrum의 두 peak를 선택하여 비교하여, 박막 균일성 여부를 분석한다. 반사율의 두 peak의 파장 영역(${\lambda}_1,{\lambda}_2$)으로부터 thin film의 thickness(t)를 구한다. $$t=\frac{1}{2(n^2-\sin^2{\theta})^{1/2}}{\times}\frac{{\lambda}_1{\lambda}_2}{{\lambda}_2-{\lambda}_1}$$ 렌즈의 중심 중간, edge 등의 지점에서 반사율 pattern이 동일 값이면 coating 렌즈의 박막은 균일성 갖는다. coating 렌즈의 박막 균일성 평가 방법을 단층막 $MgF_2$(n=1.38) coating 렌즈에 적용하였다. 박막의 thickness 차이는 360nm 정도였다. 파장의존성에 대한 광반사율의 측정으로부터 coating 렌즈의 박막 균일성을 쉽게 분석할 수 있다.

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칼코게나이트 $As_{40}Ge_{10}Se_{15}S_{35}$ 박막에서 두께에 따른 광유기 스칼라 현상 (Photo-Induced Scalar Phenomena according to Thickness Dependence of Chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ Thin Film)

  • 이현용;박수호;정홍배
    • E2M - 전기 전자와 첨단 소재
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    • 제10권5호
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    • pp.467-472
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    • 1997
  • In this study, we investigated the thickness dependence of thermal bleaching(TB) effect as well as photo-induced scalar phenomena, such as photodrakening(PD) effect and photorefraction(PR) change, in chalcogenide A $s_{40}$ G $e_{10}$S $e_{15}$ $S_{35}$ thin films. We found that when these films were exposed for 15 minutes using blue-pass filtered Hg lamp(~4300$\AA$) after annealing for 30 minutes around the glass transition temperature Tg(20$0^{\circ}C$), the refractive index change ($\Delta$n) was varied up to 0.02~0.46 according to each thickness condition and the optical energy gap ($\Delta$ $E_{op}$ ) was shifted to a longer wavelength of approximately 0.67eV, especially for 1000$\AA$-thickness. Also, the TB PD effects have been understood by the results related to optical absorption characteristics. The TB effect could be estimated as increasing the stabilization of amorphous chalcogenide films since absorption slope of extended regions(U) was not changed by annealing. On the other hand, the PD effect could be understood as due to the enhancement of disorder since U and the slope of Urbachs tail(1/F) around an absorption edge were decreased by exposing.ing.n edge were decreased by exposing.

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$La_{2/3}Sr_{1/3}MnO_3SiO_2/Si(100)$ 박막의 저-자장 터널형 자기저항변화의 두께 의존성 (Thickness Dependence of Low-Field Tunnel-Type Magnetoresistance in$La_{2/3}Sr_{1/3}MnO_3SiO_2/Si(100)$ Thin Films)

  • 심인보;안성용;김철성
    • 한국자기학회지
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    • 제11권3호
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    • pp.97-103
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    • 2001
  • Water-based 졸겔 증착법을 이용하여 디결정체 La$_{2}$3/Sr$_{1}$3/MnO$_3$(LSMO) 박막을 2000$\AA$ 두께의 열 산화층을 갖는 Si(100) 기판상에 제조하여 상온에서 LSMO박막의 두께변화 따른 저 자장영역(120 Oe)에서의 터널형 자기저항 변화를 연구하였다. XRD 회절분석 결과 단일상의 페롭스카이트 결정구조임을 알 수 있었으며 RBS 스펙트럼 분석결과 박막의 조성비 La:Sr:Mn:O는 0.67:0.33:1.0:3.0임을 알 수 있었다. LSMO 박막의 자성특성 측정결과 두께 증가에 따라 포화자화는 750$\AA$까지 급격한 증가현상을 보이다 150$\AA$을 기점으로 점차 감소하는 경향을 나타내고 있으며, 보자력은 800 $\AA$ 까지 급격한 증가를 보이다 일정해지는 경향을 볼 수 있었다. 저 자장영역에서의 터널형 자기저항 변화비는 약 1500 $\AA$의 두께 영역에서 최대값을 나타냄을 알 수 있었다. 이러한 저 자장 영역에서 LSMO 박막의 터널형 자기저항 변화비의 두께 의존성은 LSMO 박막과 Si 기판의 계면에 존재하는 상호확산 현상에 의한 dead layer의 존재 및 LSMO 박막의 열처리시 발생되는 열 격자 변형 효과로 설명하였다.

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