• Title/Summary/Keyword: Thickness dependence

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Growth and Optical Properties of SnSe/BaF2 Single-Crystal Epilayers (SnSe/BaF2 단결정 박막의 성장과 광학적 특성)

  • Lee, II Hoon;Doo, Ha Young
    • Journal of Korean Ophthalmic Optics Society
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    • v.7 no.2
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    • pp.209-215
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    • 2002
  • This study investigated the crystal growth, crystalline structure and the basic optical properties of $SnSe/BaF_2$ epilayers. The SnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy(HWE) technique. It was found from the analysis of X-ray diffraction patterns that $SnSe/BaF_2$ epilayer was growing to single crystal with orthorhombic structure oriented [111] along the growth direction. Using Rutherford back scattering(RBS), the atomic ratios of the SnSe was found to be stoichiometric, almost 50 : 50. The best values for the full width at half maximum (FWHM) of the DCXRD was 163 arcsec for SnSe epilarer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $SnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}$(E) of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points in the optical spectra. The real and imaginary parts(${\varepsilon}_1$ and ${\varepsilon}_2$) of the dielectric function ${\varepsilon}$ of SnSe were measured. These data are analyzed using a theoretical model known as the model dielectric function(MDF). The optical constants related to dielectric function such as the complex refractive index(n*-n+ik), absorption coefficient (${\alpha}$) and normal- incidence reflectivity (R) are also presented for $SnSe/BaF_2$.

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Electrochemical and Optical Studies on the Passivation of Nickel (니켈의 부동화에 관한 전기화학적 및 광학적 연구)

  • Dong Jin Kim;Woon-Kie Paik
    • Journal of the Korean Chemical Society
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    • v.26 no.6
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    • pp.369-377
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    • 1982
  • The technique of combined-measurement of reflectance and ellipsometric parameters was used for studying the anodic film formed on nickel surface in basic solutions. An ellipsometer was automated for transient measurements by way of modulating the plane-polarized light with the Faraday effect. Surface film was formed electrochemically by applying a potential step from the reduction potential range to the passivation range on a polished, high-purity, polycrystalline nickel specimen. From that instant, the changes in the reflectance(r) and the ellipsometric parameters(${\Delta},{\Psi}$) of the surface film were recorded by the automatic ellipsometer. Three exact simultaneous equations including these optical signals, ${\Delta},{\Psi}$ and r were solved numerically with a computer in order to determine the optical properties, n, k, and the thickness, ${\tau}$, of the surface film. From the computed results which showed dependence on pH and time, it was found that passivation of nickel can be effectively attained by surface film thinner than $15{\AA}$ and this passivation film has a small optical absorption coefficient. It seemed that a high pH environment enhances the rate of passivation and is favorable for a denser structure of the surface film. The experimental evidence is in accordance with the hypothesis that the composition of the passive film can be approximated by $Ni(OH)_2$ in the early stage of passivation and that as time passes the composition changes partially toward that of NiO through dehydration.

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Microwave hybrid sintering of NTC themistor (마이크로파 하이브리드 소결법에 의한 NTC 서미스터의 제조)

  • 최영락;안진용;안주삼;백동규;최승철
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.3
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    • pp.508-512
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    • 1998
  • The NTC thermistors were sintered by using microwave hybrid heating method at $1100^{\circ}C$~$1300^{\circ}C$ and those electrical properties were investigated. The obtained $B_{25^{\circ}C/85^{\circ}C}$ values from temperature dependence of electrical resisitivity were around 3100~3200 K which were almost the same values as conventionally sintered ones. Compared with conventional sintering process, this process could complete whole sintering process within 20 minutes. This the processing time and energy consumption could be reduced through this rapid heating by using microwave hybrid heating.t there were showed only two peaks, glycolide melting peak and lower molecular weight melting peak without lauryl alcohol. Conversion increased slowly with the reaction time up to 50 minutes, and then gave a sudden increase above that. The reaction time to disappear in glycolide melting peak during polymerization was shortened with the increase of lauryl alcohol content. Zero-shear viscosity of polyglycolic acid decreased with the increase of free acid content in glycolide.ssional energy and bending hysteresis increased. \circled3 Surface characteristics such as friction coefficient and thickness variation of highly shrinkage fabrics became relatively roughened state. \circled4 Since stiffened and roughened characteristics of highly shrinkage fabrics, drapabilities of them were significantly lowered. Additionally thermal insulation property of high shrinkage fabric was higher than that of low shrinkage fabric due to bulky and thickened feature. From the results, it is considered that the silk fabrics with high filling shrinkage have the good bulkiness and heat keeping properties and thus they have the suitable characteristics for high quality men's and women's formal garments.

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The Dependence of the Wedge Factor with the Variation of High Energy Photon Beam Fluences (고에너지 광자선의 선속 변화에 따른 쐬기인자의 의존성)

  • 오영기;윤상모;김재철;박인규;김성규
    • Progress in Medical Physics
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    • v.11 no.1
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    • pp.1-18
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    • 2000
  • For wedged photon beams, the variation of the wedge factor with field size was reported by several authors. However, until now such variation with field size had not been explained quantitatively. Therefore, the variation of the wedge factor was investigated by measuring outputs with field sizes increasing from 4 cm $\times$ 4 cm to 25 cm $\times$ 25 cm for open and wedged 6 and 10MV X-ray beams. The relative outputs for wedged fields to 10 cm $\times$ 10 cm have been obtained. The results show the Increase of the wedge factor caused by the change in fluence of high energy Photon beam with field size, up to 8.0% for KD77-6MV X-ray beam. This increase could be explained as a linear function of the irradiated wedge volume except small field size up to about 10 cm. In the cases of the narrow rectangular beam parallel to the wedge direction, the wedge factor decreases slightly with increasing field size up to about 10-15 cm due to a relatively reduced photon fluence from the change of the wedge thickness. We could explain the causes of a wedge factor variation with field size as the fluences of primary photon passed throughout the wedge, contributing to the dose at the central beam axis and that the fluences were affected by the gradient of the wedge with the change of field size. For clinical use, the formula developed to describe the wedge factor variation with field size has been corrected.

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Growth and Optical Properties of PbSnSe Epilayers Grown on BaF2(111) (PbSnSe 단결정 박막의 성장과 광학적 특성)

  • Lee, Il-Hoon
    • Journal of Korean Ophthalmic Optics Society
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    • v.9 no.1
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    • pp.35-41
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    • 2004
  • This study investigated the crystal growth, crystalline structure and the basic optical properties of $PbSnSe/BaF_2$ epilayers. The PbSnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy (HWE) technique. It was found from the analysis of X-ray diffraction patterns that $PbSnSe/BaF_2$ epilayer was grown single crystal with a rock-salt structure oriented along [111] the growth direction. Using Rutherford back scattering, the atomic ratios of the PbSnSe was found to be proper stoichiometric. The best values for the full width at half maximum (FWHM) of the DCXRD was 162 arcsec for PbSnSe epilayer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $PbSnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}(E)$ of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points(CPs) in the optical spectra. The real and imaginary parts(${\varepsilon}1$ and ${\varepsilon}2$) of the dielectric function ${\varepsilon}$ of PbSe were measured, and the observed spectra reveal distinct structures at energies of the E1, E2 and E3 CPs. These data are analyzed using a theoretical model known as the model dielectric function (MDF). The optical constants related to dielectric function such as the complex refractive index ($n^*=n+ik$), absorption coefficient (${\alpha}$) and normal-incidence reflectivity (R) are also presented for $PbSnSe/BaF_2$.

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Influence of Layer-thickness and Annealing on Magnetic Properties of CoSiB/Pd Multilayer with Perpendicular Magnetic Anisotropy (박막 두께 및 열처리가 수직자기이방성을 갖는 CoSiB/Pd 다층박막의 자기적 특성에 미치는 영향)

  • Jung, Sol;Yim, Haein
    • Journal of the Korean Magnetics Society
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    • v.26 no.3
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    • pp.76-80
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    • 2016
  • CoSiB is the amorphous ferromagnetic material and multilayer consisting of CoSiB and Pd has perpendicular magnetic anisotropic property. PMA has strong advantages for STT-MRAM. Moreover, amorphous materials have two advantages more than crystalline materials: no grain boundary and good thermal stability. Therefore, we studied the magnetic properties of multilayers consisting of the $Co_{75}Si_{15}B_{10}$ with PMA. In this study, we investigated the magnetic property of the [CoSiB (3, 4, 5, and 6) ${\AA}$/Pd(11, 13, 15, 17, 19,and $24{\AA})]_5$ multilayers and found the annealing temperature dependence of the magnetic property. The annealing temperature range is from room temperature to $500^{\circ}C$. The coercivity and the saturation magnetization of the CoSiB/Pd multilayer system have a close association with the annealing temperature. Moreover, the coercivity especially shows a sudden increasing at the specific annealing temperature.

A Study on the Directional Dependence of Scatter Ray in Radiography (X선 촬영시 산란선 방향 의존성에 관한 연구)

  • Oh, Hyun-Joo;Kim, Sung-Soo;Kim, Young-Il;Lim, Han-Young;Kim, Heung-Tae;Lee, Who-Min;Kim, Hak-Sung;Lee, Sang-Suk
    • Journal of radiological science and technology
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    • v.18 no.1
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    • pp.63-70
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    • 1995
  • In this pauper, the back, forward, side and $45^{\circ}$ oblique scatter dose were measured the X-ray exposure conditions 60, 80, 100, 120kV, FFD 100cm, FS $20\times20cm$, toward the $25\times25cm\times10\sim20cm$ of solid water, paraffin and MiX-DP phantom, and Pb, Cu, Al, and styrofoam meterials, by the electrometer and 5.3 cc ionization chamber. The obtained results are summarized as following. 1. The percentage depth dose(PDD) at the range of the diagnostic x-ray energy were appeared 50 % depth dose at the 2 cm depth with 60 kV, and 5 cm depth with 120 kV X-ray, 10 % depth dose at the 10 cm depth with 60 kV and 14 cm depth with 120 kV X-ray, 5 % below depth dose at the 20 cm depth. 2. The back scatter dose which were generated the surface of Pb, Cu and Al metal plates were 10 % below, and than the back scatter dose at the Pb plate were a most amount of these which were about 10 %, and were appeared the order of Cu and Al. 3. The percentage forward scatter were appeared from 50 % to 65 %, and the more phantom thicknees become, the more forward scatter were increased with the ratio of 5 % per 5 cm thickness. 4. The percentage back scatter which were generated the tissue equivalence meterials solid water, paraffin and MiX-DP were from 20 % to 40 %, and than the back scatter dose at the solid water were a mest amount of those, and paraffin and MiX-DP were appeared with the next values. 5. The percentage $90^{\circ}$ lateral and $45^{\circ}$ oblique side scatter dose were measured from 4 % to 12 %. a most amount of scatter dose which were generated from the patient in radiography were the forward scatter, the next values were the back scatter, the third values were the $90^{\circ}$ lateral scatter.

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Analysis of Growth Condition and Some Suggestions for Its Maintenance of Legally Protected Trees Grown in Pyungtack City, Kunggi Province, Korea (경기도 평택시 보호수의 생육실태와 관리방안 연구)

  • Lee, Jong-Bum;Doo, Chul-Eon;Lee, Jae-Keun
    • Journal of the Korean Society of Environmental Restoration Technology
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    • v.15 no.3
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    • pp.45-54
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    • 2012
  • This study intended to analyze growth condition of each object by protected tree's ground for 45 places registered to Pyeongtaek protected tree list in locational characteristics, conduct exchange analysis for impediment extent rate in crown area and tree type to the result and suggest the measures to manage artificial impediment which is an effect on protected tree condition. In this study, the tree whose area of impediment for crown area is less than 21% is tree condition of grade 1~2, less than 21~50% is grade 2~3 and more than 50% is grade 3~5. The more impediment is, the more inconvenience causes on growth and development. So, it verified that the area rate must maintain less than 21% for the root system management of protected tree. For the standard of managing artificial impediment which is an effect on the tree condition of protected trees, the below matters intend to be suggested. The first, the impediment in crown area should be less than 21%. But, if there is not artificial impediment out of crown area, the rate of impediment area is considered to increase somewhat. The second, growth space of protected tree should be maintained by crown area at least and impediment should be established out of the crown area. The third, during the national project and land development, surroundings of protected tree must be applied as park, resting place, etc. and the establishment area of impediment (artificial impediment and natural impediment) in crown area must be limited. The forth, publicity for regional people (especially, land owner) is necessary for the protection of natural inheritance and the value of dependence on local government and village which are the subject of management must be announced widely through the internet media, etc, so its importance must be recognized. The fifth, the matters related to protected tree management must be able to limit artificial damage which is for surroundings of protected tree through the mutual connection among the local governments; construction, civil engineering, architecture, water and sewage, agriculture and forest and others. Also, following studies on the effects of kinds, thickness, etc. of impediment around the protected tree on trees should be continued.

Prevention of P-i Interface Contamination Using In-situ Plasma Process in Single-chamber VHF-PECVD Process for a-Si:H Solar Cells

  • Han, Seung-Hee;Jeon, Jun-Hong;Choi, Jin-Young;Park, Won-Woong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.204-205
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    • 2011
  • In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

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Magneto-impedance and Magnetic Relaxation in Electrodeposited Cu/Ni80Fe20 Core/Shell Composite Wire (전기도금 된 Cu/Ni80Fe20 코어/쉘 복합 와이어에서 자기임피던스 및 자기완화)

  • Yoon, Seok Soo;Cho, Seong Eon;Kim, Dong Young
    • Journal of the Korean Magnetics Society
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    • v.25 no.1
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    • pp.10-15
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    • 2015
  • The model for the magneto-impedance of composite wires composed of highly conductive nonmagnetic metal core and soft magnetic shell was derived based on the Maxwell's equations. The Cu($100{\mu}m$ diameter)/$Ni_{80}Fe_{20}$($15{\mu}m$ thickness) core/shell composite wire was fabricated by electrodeposition. The impedance spectra for the $Cu/Ni_{80}Fe_{20}$ core/shell composite wire were measured in the frequency range of 10 kHz~10 MHz under longitudinal dc magnetic field in 0 Oe~200 Oe. The spectra of complex permeability in circumferential direction were extracted from the impedance spectra by using the derived model. The extracted spectra of complex permeability showed relaxation-type dispersion which is well curve-fitted with Debye equation with single relaxation frequency. By analyzing the magnetic field dependence of the complex permeability spectra, it has been verified that the composite wire has magnetic anisotropy in longitudinal direction and the origin of the single relaxation process is the magnetization rotation in circumferential direction.