• Title/Summary/Keyword: Thick hybrid IC

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Thick Film Hybrid IC 설계 및 공정

  • 김상만
    • The Magazine of the IEIE
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    • v.17 no.6
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    • pp.53-60
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    • 1990
  • 본 글은 완성된 circuit를 thick-film hybrid IC화 하기 위하여 고려하여야 할 사항인 설계의 기본개념, 기판 재질의 소개 및 특성, 도체, 저항, 유전체 paste를 소개하고 제조 기술 분야에서는 기본공정인 인쇄, 소성, 트리밍, packaging에 대하여 기술하였다.

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Optimization of Plasma Spray Coating Parameters of Alumina Ceramic by Taguchi Experimental Method (실험계획법에 의한 알루미나 세라믹의 플라즈마 용사코팅 최적화)

  • 이형근;김대훈;윤충섭
    • Journal of Welding and Joining
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    • v.18 no.6
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    • pp.96-101
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    • 2000
  • Sintered alumina ceramic substrate has been used for the insulating substrate for thick Hybrid IC owing to its cheapness and good insulating properties. Some of thick HIC's are important to eliminate the heat emitted from the parts that are mounted on the ceramic substrate. Sintered ceramic substrate can not transfer and emit the heat efficiently. It's been tried to do plasma spray coating of alumina ceramic on the metal substrates that have a good heat emission property. The most important properties to commercialize this ceramic coated metal substrate are surface roughness and deposition efficiency. In this study, plasma spray coating parameters are optimized to minimize the surface roughness and to maximize the deposition efficiency using Taguchi experimental method. By this optimization, the deposition efficiency was greatly improved from 35% at the frist time to 75% finally.

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A Study on Reliability of Solder Joint in Different Electronic Materials (이종 전자재료 JO1NT 부위의 신뢰성에 관한 연구)

  • 신영의;김경섭;김형호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.49-54
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    • 1993
  • This paper discusses the reliability of solder joints of electronic devices on printed circuit board. Solder application is usually done by screen printing method for the bonding between outer leads of devices and thick film(Ag/Pd) pattern on Hybrid IC as wel1 as Cu lands on PCB. As result of thermal stresses generated at the solder joints due to the differences of thermal expansion coefficients between packge body and PCB, Micro cracking often occurs due to thermal fatigue failure at solder joints. The initiation and the propagate of solder joint crack depends on the environmental conditions, such as storage temperature and thermal cycling. The principal mechanisms of the cracking pheno- mana are the formation of kirkendal void caused by the differences in diffusion rate of materials, ant the thermal fatigue effect due to the differences of thermal expansion coefficient between package body and PCB. Finally, This paper experimentally shows a way to supress solder joints cracks by using low-${\alpha}$ PCB and the packages with thin lead frame, and investigates the phenomena of diffusion near the bonding interfaces.

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High Q High Gain VHF Active Filters and Their Application to FM Receivers (고Q고이득 VHF 능동필터와 그 FM 수신기에의 응용)

  • 박송배
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.9 no.5
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    • pp.27-33
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    • 1972
  • This paper describes the computer-aided design, fabrication and performance of high Q and high gain active filters suitable for microminiaturization in the frequency range of 10-800MHz, based on the negative resistance operation of a transistor. 48 as high as 1000 and a transducer gain as high as 35dB can readily be obtained with a single-transistor amplifier and with an inductance as small as a few nH at higher frequencies and 150 nH at lower frequencies in tile above frequency range. The gain of the proposed active filter can be stoabilized within $\pm$ 1.5 dB over the temperature range -1$0^{\circ}C$ to +5$0^{\circ}C$ and the temperature dependence of the center frequency is tapicalla 50ppm/$^{\circ}C$. An experimental FM receiver utilizing these fitters and operating at a carrier frequency of 92 MH3 was built. The whole circuit was fabricated on eight alumina substrates of by the thick-film hybrid IC technique and the coils are constructed, for miniaturization, in a spiral form of 3 or 4 turns of enamel copper wire with an overall diameter of about 5mm. The test results are also reported in this paper.

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Silicon Capacitive Pressure Sensor for Low Pressure Measurements (저 압력 측정을 위한 실리콘 용량형 압력센서)

  • Seo, Hee-Don;Lee, Youn-Hee;Park, Jong-Dae;Choi, Se-Gon
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.19-27
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    • 1993
  • Capacitive pressure sensor for low pressure measurements has been fabricated by using $n^{+}$ epitaxial layer electrochemical etching stop and glass-to-silicon electrostatic bonding technique. The sensor had hybrid configuration of a sensor chip, which consists of sensor capacitor and reference capacitor, and two output signal detection IC chips. A fabricated sensor, with a $1.0{\times}1.0 mm^{2}$ square size and a $10{\mu}m$ thick flat diaphragm, showed a 7.1 pF zero pressure capacitance, and 5.2 % F.S, sensitivity in 10 KPa pressure range. By using a capacitance to voltage converter, the thermal zero shift of 0.051 %F.S./$^{\circ}C$ and the thermal sensitivity shift of 0.12 %F.S./$^{\circ}C$ for temperature range of $5{\sim}45^{\circ}C$ were obtained.

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