• Korean Journal of Materials Research
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• v.14 no.9
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• pp.607-613
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• 2004

This study was to investigate the surface properties of electrochemically oxidized Ti-6Al-7Nb alloy by anodic spark discharge technique. Anodizing was performed at current density 30 $mA/cm^2$ up to 300 V in electrolyte solutions containing $DL-{\alpha}$-glycerophosphate disodium salt hydrate($DL-{\alpha}$-GP) and calcium acetate (CA). Hydrothermal treatment was done at $300^{\circ}C$ for 2 hrs to produce a thin outermost layer of hydroxyapatite (HA). The bioactivity was evaluated from HA formation on the surfaces in a Hanks' solution with pH 7.4 at $36.5^{\circ}C$ for 30 days. The size of micropores and the thickness of oxide film increased and complicated multilayer by increasing the spark forming voltage. Needle-like HA crystals were observed on anodic oxide film after the hydrothermal treatment at $300^{\circ}C$ for 2 hrs. When increasing $DL-{\alpha}$-GP in electrolyte composition, the precipitated HA crystals showed the shape of thick and shorter rod. However, when increasing CA, the more fine needle shape HA crystals were appeared. The bioactivity in Hanks' solution was accelerated when the oxide films composed with strong anatase peak with presence of rutile peak. The increase of amount of Ca and P was observed in groups having bioactivity in Hanks' solution. The Ca/P ratio of the precipitated HA layer was equivalent to that of HA crystal and it was closer to 1.67 as increasing the immersion time in Hanks' solution.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.81-89
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• 1994

Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.1
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• pp.78-84
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• 2009

In this paper, ZnO:Al thin film was deposited on polyethylene terephthalate(PET) substrate by capacitively coupled r. f. magnetron sputtering method from a ZnO target mixed with 2wt[%] Al2O3 to investigate the possible application of ZnO:Al film as a transparent conducting electrode for film typed DSCs. The effect of substrate bias on the electrical properties and film structure were studied. The results showed that a positive bias applied to the substrate during sputtering contributed to an improvement of electrical properties of the film by attracting electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO:Al film on the substrate, resulting in significant variations in film structure and electrical properties. Electrical resistivity of the film decreases significantly as the positive bias increases up to +30[V] However, as the positive bias increases over +30[V], the resistivity decreases. The transmittance varies little as the substrate bias is increased from 0 to +60[V], and as r. f. powers increases from 160[W] to 240[W]. The film with electrical resistivity as low as $1.8{\times}10^{-3}[{\Omega}-cm]$ and optical transmittance of about 87.8[%] were obtained for 1,012[nm] thick film deposited with a substrate bias of +30[V].

• Korean Journal of Crystallography
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• v.12 no.2
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• pp.70-75
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• 2001

The purpose of this study is to investigate the effect of V₂O/sub 5/ addition on physical and magnetic properties of NiCuZn ferrite for multi-layer chip inductors. NiCuZn ferrite pastes doped with 0, 0.1, 0.3 and 0.5 wt% V₂O/sub 5/ were prepared and samples of ferrite sheets were prepared by the screen printing method. They were sintered at 870, 880, 890 and 900℃, and then their physical and magnetic properties were analyzed. After sintering at 870℃, the sintered density of the ferrite sheet doped with 0.5wt% V₂O/sub 5/ showed the highest value to 5.08g/cm³due to the best densification by the liquid phase sintering, while the microstructures of ferrite sheets doped with 0.1 and 0.3 wt% V₂O/sub 5/ showed and inhibited grain growth. Irrespective of the sintering temperature, the initial permeability of ferrite sheet doped with 0.5 wt% V₂O/sub 5/ was highest and after sintering beyond 880℃, the quality factor of 0.3 wt% V₂O/sub 5/-doped sample appeared to be highest.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.7-11
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• 2014

Recently, the buffer layers consisting of poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT-PSS) are extensively used to improve power conversion efficiency (PCE) of organic solar cells. However, PEDOT-PSS is not suitable for mass production of organic solar cells due to its intrinsic acid and hygroscopic properties. Moreover, because of chemical reactions between indium tin oxide (ITO) layer and PEDOT-PSS layer, the interface is not stable. For these reasons, alternative materials such as $V_2O_5$ have been developed to be an effective buffer layer. In this work, we used $V_2O_5$/Ag/ITO multilayer structure for the anode buffer layer. With variation of thickness of Ag layer, we investigated the optical and electrical properties of $V_2O_5$/Ag/ITO multi-layer films. As a result, we found that the electrical properties were improved with increasing Ag thickness while optical transmittance decreases in visible wavelength region. From the calculation of figure of merit (FOM) which is used to evaluate proper structure for transparent of optoelectronic, $V_2O_5$/Ag/ITO multilayer electrode was optimized with 4 nm thick Ag layer in optical (88% in transmittance) and electrical ($4{\times}10^{-4}{\Omega}cm$) properties. This indicates that $V_2O_5$/Ag/ITO multilayer electrode could be a candidate for the anode of optoelectronic devices.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.5
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• pp.471-478
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• 2010

Thin films play an important role in many technological applications including microelectronic devices, magnetic storage media, MEMS and surface coatings. It is well known that a thin film's material properties can be very different from the corresponding bulk properties and thus there has been a strong need for the development of a reliable test method to measure the mechanical properties of a thin film. We have developed an alternative and convenient test method to overcome the limitations of previous membrane deflection experiment and uniaxial tensile test by adopting a white light interferometer having sub-nanometer out-of-plane displacement resolution. The freestanding aluminium specimens are tested to verity the effectiveness of the test method developed and get the tensile properties. The specimens are 0.5 rum wide, $1{\mu}m$ thick and fabricated through MEMS processes including sputtering. 1 to 5 specimens are fabricated on Si dies. The membrane deflection experiments are carried out by using a homemade tester consisted of a motor-driven loading tip, a load cell, and 6 DOF alignment stages. The test system is compact enough to set it up beneath a commercial white light interferometric microscope. The white light fringes are utilized to align a specimen with the tester. The Young's modulus and yield point stress of the aluminium film are 62 GPa and 247 MPa, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Korean Journal of Materials Research
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• v.9 no.9
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• pp.896-899
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• 1999

A carbon dioxide gas sensor was studied as a function of temperature and $CO_2$concentration in the Li$_2$ZrO$_3$ system. Lithium zirconate(Li$_2$ZrO$_3$) was synthesized by the heat-treatment of zirconia(ZrO$_2$)and Lithium carbonate(Li$_2$CO$_3$). The specimens were prepared both as bulk disk, 10mm in diameter and 1.0mm thickness, and thick films on an alumina substrate. Lithium zirconate readily responded to $CO_2$concentration from 0.1% to 100% in the range of 45$0^{\circ}C$ to $650^{\circ}C$. The sensitivity to $CO_2$ was dependent on the measuring temperature. Lithium zirconate(Li$_2$ZrO$_3$) decomposes into Li$_2$CO$_3$ and ZrO$_2$after the reaction with $CO_2$in the range of 45$0^{\circ}C$ to $650^{\circ}C$. Li$_2$CO$_3$ changes into Li$_2$O and $CO_2$ above $650^{\circ}C$. The material showed difficulty with reversibility and recovery. The optimum temperature for the highest sensitivity is around 55$0^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.27-36
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• 2006

We fabricated thermally evaporated 10 nm-Ni/(poly)Si, 10 nm-Ni/l nm-Ir/(poly)Si and 10 nm-Ni/l nm-Pt/(poly)Si films to investigate the thermal stability of nickel monosilicides at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides of 50 nm-thick were formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to examine sheet resistance. A scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An X-ray diffractometer and an Auger depth profiler were used for phase and composition analysis, respectively. Nickel silicides with platinum have no effect on widening the NiSi stabilization temperature region. Nickel silicides with iridium farmed on single crystal silicon showed a low resistance up to $1200^{\circ}C$ while the ones formed on polycrystalline silicon substrate showed low resistance up to $850^{\circ}C$. The grain boundary diffusion and agglomeration of silicides lowered the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.445-449
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• 1997

The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.