• Title/Summary/Keyword: Thermoelectricity

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A Review of Mean-Field Homogenization for Effective Physical Properties of Particle-Reinforced Composites (평균장 균질화를 이용한 입자 강화 복합재의 유효 물성치 예측 연구 동향)

  • Lee, Sangryun;Ryu, Seunghwa
    • Composites Research
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    • v.33 no.2
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    • pp.81-89
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    • 2020
  • In this review paper, we introduce recent research studied effective physical properties of the reinforced composite using mean-field homogenization. We address homogenization for effective stiffness and expand it to effective thermal/electrical conductivity and dielectric constant. Multiphysics problems like piezoelectricity and thermoelectricity are considered by simplifying the constitutive equation into the linear equations like Hooke's law. We present a generalized theoretical formula for predicting effective physical properties of composite and validation by against finite element analysis.

Current Status of Nanostructured Thermoelectric Materials for Mid-High Temperature Applications (나노구조 기반 중·고온용 열전소재 연구 동향)

  • Nam, Woo Hyun;Shin, Weon Ho;Cho, Jung Young;Seo, Won-Seon
    • Ceramist
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    • v.22 no.2
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    • pp.133-145
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    • 2019
  • Thermoelectric energy conversion has attracted much attention because it can convert heat into electric power directly through solid state device and vice versa. Current research is aimed at increasing the thermoelectric figure of merit (ZT ) by improving the power factor and reducing the thermal conductivity. Although there have been significant progresses in increasing ZT of material systems composed of Bi, Te, Ge, Pb, and etc. over the last few decades, their relatively high cost, toxicity, and the scarcity have hindered further development of thermoelectrics to expand practical applications. In this paper, we review the current status of research in the fields of nanostructured thermoelectric materials with eco-friendly and low cost elements, such as skutterudites and oxides, for mid-high temperature applications, highlighting the strategies to improve thermoelectric performance.

Design and Implementation of Medical Compound Stimulator Using Low/High Frequency and Cooling Stimulation (저주파/고주파와 냉자극을 이용한 의료용 조합 자극기의 설계 및 구현)

  • Yoon, Wan-Oh;Kang, Suk-Youb;Jung, Jin-Ha;Choi, Sang-Bang
    • Journal of Biomedical Engineering Research
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    • v.29 no.1
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    • pp.82-87
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    • 2008
  • In this paper, the study was carried out to design and implement the medical compound stimulator based on the preexisting individual medical stimulators with Low frequency, High frequency and cooling stimulation. The proposed equipment is designed to compound all the functions including a cooling stimulation with a range of $0{\sim}20^{\circ}C$ and the verified low and high frequencies of 250Hz, 500Hz, 1KHz and 1MHz respectively from the previous clinical experiment with a consideration of its credibility and efficiency. Also, it was constructed by using a new technique, thermoelectricity semiconductor with a consideration of miniaturization and stability. In accordance with patients' treatment purpose, the hand piece of low frequency/cooling stimulation and High frequency/cooling stimulation were separately designed for convenience. The frequency, accuracy and other factors of implemented medical compound stimulator was satisfied according to its measurement. It was also tested by Korean Testing Laboratory (KTL) for its stability and efficacy and it confirmed that the medical compound stimulator is suitable for use as it fits in with the medical equipment standards.

Correlation between a Structural Change and a Thermoelectric Performance of a Glassy Carbon Thin Film Induced by Electron Beam Irradiation (전자빔 조사에 의한 유리상 탄소에서의 구조적 변화와 열전 성능의 상관관계)

  • Oh, Inseon;Jo, Junhyeon;An, Ki-Seok;Yoo, Jung-woo
    • Composites Research
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    • v.29 no.4
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    • pp.156-160
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    • 2016
  • Glassy carbon can be utilized in a variety of harsh environment due to exceptional thermal stability and chemically impermeability along with scalability and low electrical resistance. In this work, we studied effects of electron(e)-beam irradiation on thermoelectric properties of the glassy carbon film. E-beam irradiation triggered local crystallization and/or amorphization of glassy carbon thin films, which was determined by a Raman spectroscopy. The structural change by e-beam irradiation leads to the change in the doping level of the glassy carbon, which can be inferred from the change of a Seebeck coefficient and an electric conductivity. The optimal power factor we obtained for the irradiated glassy carbon film was ~200% higher than that of the non-irradiated sample.

Magnetoresistance of Bi Nanowires Grown by On-Film Formation of Nanowires for In-situ Self-assembled Interconnection

  • Ham, Jin-Hee;Kang, Joo-Hoon;Noh, Jin-Seo;Lee, Woo-Young
    • Proceedings of the Korean Magnestics Society Conference
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    • 2010.06a
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    • pp.79-79
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    • 2010
  • Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

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