• Composites Research
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• 제33권2호
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• pp.81-89
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• 2020

본 리뷰 논문에서는 최근에 연구된 평균장 균질화법을 이용한 다양한 물성치 예측 연구의 동향에 대해 소개한다. 유효 강성 예측에 사용되는 기존의 균질화법을 소개하고 이를 확장하여 유효 열/전기 전도성 및 유전 상수를 예측하는 방법을 소개한다. 압전 및 열전과 같이 2개의 물리현상이 중첩된 다중 물리 현상의 구성방정식은 훅 법칙과 같이 단순한 선형 형태로 변환하여 복합재의 유효 물성치를 예측하는 연구를 소개하고 마지막으로 복합 재료의 유효 물성치를 예측하기 위한 일반화된 식을 제시하고 유한 요소 해석과 비교한 검증/연구를 소개한다.

• 세라미스트
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• 제22권2호
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• pp.133-145
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• 2019

Thermoelectric energy conversion has attracted much attention because it can convert heat into electric power directly through solid state device and vice versa. Current research is aimed at increasing the thermoelectric figure of merit (ZT ) by improving the power factor and reducing the thermal conductivity. Although there have been significant progresses in increasing ZT of material systems composed of Bi, Te, Ge, Pb, and etc. over the last few decades, their relatively high cost, toxicity, and the scarcity have hindered further development of thermoelectrics to expand practical applications. In this paper, we review the current status of research in the fields of nanostructured thermoelectric materials with eco-friendly and low cost elements, such as skutterudites and oxides, for mid-high temperature applications, highlighting the strategies to improve thermoelectric performance.

• 대한의용생체공학회:의공학회지
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• 제29권1호
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• pp.82-87
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• 2008

In this paper, the study was carried out to design and implement the medical compound stimulator based on the preexisting individual medical stimulators with Low frequency, High frequency and cooling stimulation. The proposed equipment is designed to compound all the functions including a cooling stimulation with a range of $0{\sim}20^{\circ}C$ and the verified low and high frequencies of 250Hz, 500Hz, 1KHz and 1MHz respectively from the previous clinical experiment with a consideration of its credibility and efficiency. Also, it was constructed by using a new technique, thermoelectricity semiconductor with a consideration of miniaturization and stability. In accordance with patients' treatment purpose, the hand piece of low frequency/cooling stimulation and High frequency/cooling stimulation were separately designed for convenience. The frequency, accuracy and other factors of implemented medical compound stimulator was satisfied according to its measurement. It was also tested by Korean Testing Laboratory (KTL) for its stability and efficacy and it confirmed that the medical compound stimulator is suitable for use as it fits in with the medical equipment standards.

• Composites Research
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• 제29권4호
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• pp.156-160
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• 2016

유리상 탄소는 열적으로 안정하고, 화학적 반응성이 매우 낮으며, 다양한 크기로 제작이 가능하고, 전기적 저항 또한 낮아서 다양한 극한 환경에서 사용 가능하다. 이 논문에서는 전자빔 조사가 유리상 탄소 박막의 구조 변화에 미치는 영향과 그에 따른 열전효과 변화에 대해 연구하였다. 라만 분광 특성 분석을 바탕으로 유리상 탄소 박막에 전자빔 조사에 따라 결정화 또는 비정질화가 일어나는 것을 확인하였다. 또한, 이러한 결정변화가 유리상 탄소 박막의 자유전자 도핑 농도의 변화시키며 그에 따른 제백 상수나 전기적 전도도의 변화도 확인하였다. 전자빔 조사로 인하여 유리상 탄소의 열전파워 펙터가 최대 200%까지 향상되는 것을 보여 주었다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.