• Journal of the Korea Institute of Military Science and Technology
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• v.19 no.4
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• pp.483-491
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• 2016

A simple aerodynamic calculation program for high Mach number flow is developed by combining the modified Newtonian method with Tannehill's curve fits for the thermodynamic properties of air in equilibrium state. Aerodynamic characteristics for a parabolic nose are predicted and compared with CFD(Computational Fluid Dynamics) analysis results. Comparison shows good agreements, and the developed program is expected to be a practical tool for slender body aerodynamic calculation for high Mach number flow.

• Journal of the Korean Institute of Navigation
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• v.15 no.3
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• pp.99-106
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• 1991

In order to grow InGaAsP epitaxial layer on GaAs by LPE, an accurate phase diagram for In-Ga-As-P quarternary compounds is required. But the short wavelength InGaAsP/GaAs phase diagram for full wavelength range was not yet reported. In this study, therefore, a theoretical calculation has been carried out by using thermodynamic's equation for InGaAsP/GaAs in order to get the relation between the mole fraction of the sloute and solid phase compounds. And the calculation being compared with the dta of Kawanishi et. al, the result has been shown that his phase diagram obtained by the calculation can apply to growing InGaAsP/GaAs by LPE.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.621-624
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• 2011

In order to deposit a homogeneous and uniform ${\beta}$-SiC films by chemical vapor deposition, we constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure(P), temperature(T) and gas composition(C) as variables in $C_3H_8-SiCl_4-H_2$ system. During the calculation, the ratio of Cl/Si and C/Si is maintained to be 4 and 1, respectively, and H/Si ratio is varied from 2.67 to 15,000. The P-T-C diagram showed very steep phase boundary between SiC+C and SiC region perpendicular to H/Si axis and also showed SiC+Si region with very large H/Si value of ~6700. The diagram can be applied not only to the prediction of the deposited phase composition but to compositional variation due to the temperature distribution in the reactor. The P-T-C diagram could provide the better understanding of chemical vapor deposition of silicon carbide.

• Journal of the Korean Chemical Society
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• v.15 no.3
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• pp.133-145
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• 1971

A method of theoretical calculation of the thermodynamic properties for liquid-vapor interface of binary solution is developed according to the transient state theory of significant liquid structure. The surface tensions, the adsorbed amounts at the liquid-vapor interface and the activity coefficients of the components for the solutions of $C_6H_{12}-C_6H_6$ $CCI_4-C_6H_6$, $CHCl_3-C_6H_6$, $CHCl_3-CCl_4$, $CCl_4-CS_2$ are calculated through the full ranges of the compositions.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.173-176
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• 1998

Epitaxial Si layers were deposited on n- or p-type Si(100) substrates by hot-wall chemical vapor deposition (CVD) technique using the {{{{ {SiH }_{ 2} {Cl }_{2 } - {H }_{ 2} }}}}chemistry. Thermodynamic calculations if the Si-H-Cl system were carried out to predict the window of actual Si deposition procedd and to investigate the effects of process variables(i.e., the deposition temperature, the reactor pressure, and the source gas molar ratios) on the growth of epitaxial layers. The calculated optimum process conditions were applied to the actual growth runs, and the results were in good agreement with the calculation. The expermentally determined optimum process conditions were found to be the deposition temperature between 900 and 9$25^{\circ}C$, the reactor pressure between 2 and 5 Torr, and source gad molar ration({{{{ {H }_{2 }/ {SiH }_{ 2} {Cl }_{2 } }}}}) between 30 and 70, achieving high-quality epitaxial layers.

• Journal of Energy Engineering
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• v.23 no.4
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• pp.215-222
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• 2014

A theory-based methodology for describing the thermodynamic properties of molecular nitrogen is presented. The results obtained indicate a successful application of a fully consistent statistical method for the description of a molecular system in different phase states. The method employs a density of states equation for solid nitrogen and a perturbation potential for gaseous and liquid nitrogen. The main characteristics of the calculation method include the need for a minimal number of initial data and the absence of fitting parameters. The adequacy of the physical model that is the basis for the method allows a description of existing experimental data and the peculiarities of the thermodynamic properties.

• Journal of The Korean Association For Science Education
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• v.9 no.2
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• pp.13-27
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• 1989

A curriculum for teaching materials in Science Education was studied as a model for modified experiment on fundamental courses. Conscious effort can be made to desingn experiments that require minimum apparatus: that require low-cost equipment that can be made from cheap locally available materials. Computer-aided instruction programs at high school, freshman course level have been developed. The software package was consist of five programs: The program contains explanation and problems for the calculation of resonance energy, molecular structure, mole concept. Rutherford's experiment. thermodynamic processes. Special course equipment package explanation mole concept, Rutherford's experiment, thermodynamic processes. Special course were designed in Science Education with the understanding that to a certain extent science values would be covered in all of the modified experiments and program models.

• Resources Recycling
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• v.27 no.2
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• pp.63-67
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• 2018

Gibbs free energy is a measure of relative stability among substances. Since the nature of the ions in aqueous solution is diverse, their thermodynamic data at extensive experimental conditions is scarce. In this work, the calculation procedure was introduced to obtain the absolute and conventional standard molar enthalpies and entropies of hydration of ions from the standard enthalpies and entropies of formation of hydrated ions. The application of correspondence principle to estimate thermodynamic data at high temperature was explained.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.47-51
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• 1998

The GaN thick films were deposited on sapphire substrates by the chloride vapor phase epitaxy (CVPE) technique suing the GaCl3-NH3-N2 chemistry. Thermodynamic simulations were carried out to predict the optimum process windows, and the results were compared with the experiments. A large difference in the growth temperature was observed between the calculation an the experiment, and it indicated that the growth of GaN by the CVPE technique is kinetically limited.

• Journal of the Korean earth science society
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• v.25 no.1
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• pp.39-47
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• 2004

In the FMAS system the effect of iron on alumina solubility in orthopyroxene has been determined by experiments with crystalline starting mixtures of garnet and orthopyroxene of known initial compositions at 20 kb, 975$^{\circ}C$ and 25 kb, 1,200$^{\circ}C$. These data have been modeled to develop a thermodynamic method for the calculation of Al$_{2}$O$_{3}$ in orthopyroxene as a function of P, T and composition. The direct application of the alumina solubility data in the MAS system to natural assemblages could lead to significant overestimation of pressure, probably by about 5kb for the relatively common garnet-lherzolites with abot 25 mol per cent Ca + Fe$^{2+}$ in garnet and about 1 wt. per cent Al$_{2}$O$_{3}$ in orthopyroxene since the effect of Fe is similar to that of Ca and Cr$^{3+}$in reducing the alumina solubility in orthopyroxene in equilibrum with garnet relative to that in the MAS system.