• 한국군사과학기술학회지
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• 제19권4호
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• pp.483-491
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• 2016

A simple aerodynamic calculation program for high Mach number flow is developed by combining the modified Newtonian method with Tannehill's curve fits for the thermodynamic properties of air in equilibrium state. Aerodynamic characteristics for a parabolic nose are predicted and compared with CFD(Computational Fluid Dynamics) analysis results. Comparison shows good agreements, and the developed program is expected to be a practical tool for slender body aerodynamic calculation for high Mach number flow.

• 한국항해학회지
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• 제15권3호
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• pp.99-106
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• 1991

In order to grow InGaAsP epitaxial layer on GaAs by LPE, an accurate phase diagram for In-Ga-As-P quarternary compounds is required. But the short wavelength InGaAsP/GaAs phase diagram for full wavelength range was not yet reported. In this study, therefore, a theoretical calculation has been carried out by using thermodynamic's equation for InGaAsP/GaAs in order to get the relation between the mole fraction of the sloute and solid phase compounds. And the calculation being compared with the dta of Kawanishi et. al, the result has been shown that his phase diagram obtained by the calculation can apply to growing InGaAsP/GaAs by LPE.

• 한국세라믹학회지
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• 제48권6호
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• pp.621-624
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• 2011

In order to deposit a homogeneous and uniform ${\beta}$-SiC films by chemical vapor deposition, we constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure(P), temperature(T) and gas composition(C) as variables in $C_3H_8-SiCl_4-H_2$ system. During the calculation, the ratio of Cl/Si and C/Si is maintained to be 4 and 1, respectively, and H/Si ratio is varied from 2.67 to 15,000. The P-T-C diagram showed very steep phase boundary between SiC+C and SiC region perpendicular to H/Si axis and also showed SiC+Si region with very large H/Si value of ~6700. The diagram can be applied not only to the prediction of the deposited phase composition but to compositional variation due to the temperature distribution in the reactor. The P-T-C diagram could provide the better understanding of chemical vapor deposition of silicon carbide.

• 대한화학회지
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• 제15권3호
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• pp.133-145
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• 1971

액체구조의 천이상태이론을 이성분용액의 액체-증기 계면에 적용하여, $C_6H_{12}-C_6H_6$ $CCI_4-C_6H_6$, $CHCl_3-C_6H_6$, $CHCl_3-CCl_4$, $CCl_4-CS_2$계의 표면장력, 표면흡착량, 표면에서의 활동도 계수들을 계산하였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.173-176
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• 1998

Epitaxial Si layers were deposited on n- or p-type Si(100) substrates by hot-wall chemical vapor deposition (CVD) technique using the {{{{ {SiH }_{ 2} {Cl }_{2 } - {H }_{ 2} }}}}chemistry. Thermodynamic calculations if the Si-H-Cl system were carried out to predict the window of actual Si deposition procedd and to investigate the effects of process variables(i.e., the deposition temperature, the reactor pressure, and the source gas molar ratios) on the growth of epitaxial layers. The calculated optimum process conditions were applied to the actual growth runs, and the results were in good agreement with the calculation. The expermentally determined optimum process conditions were found to be the deposition temperature between 900 and 9$25^{\circ}C$, the reactor pressure between 2 and 5 Torr, and source gad molar ration({{{{ {H }_{2 }/ {SiH }_{ 2} {Cl }_{2 } }}}}) between 30 and 70, achieving high-quality epitaxial layers.

• 에너지공학
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• 제23권4호
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• pp.215-222
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• 2014

A theory-based methodology for describing the thermodynamic properties of molecular nitrogen is presented. The results obtained indicate a successful application of a fully consistent statistical method for the description of a molecular system in different phase states. The method employs a density of states equation for solid nitrogen and a perturbation potential for gaseous and liquid nitrogen. The main characteristics of the calculation method include the need for a minimal number of initial data and the absence of fitting parameters. The adequacy of the physical model that is the basis for the method allows a description of existing experimental data and the peculiarities of the thermodynamic properties.

• 한국과학교육학회지
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• 제9권2호
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• pp.13-27
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• 1989

A curriculum for teaching materials in Science Education was studied as a model for modified experiment on fundamental courses. Conscious effort can be made to desingn experiments that require minimum apparatus: that require low-cost equipment that can be made from cheap locally available materials. Computer-aided instruction programs at high school, freshman course level have been developed. The software package was consist of five programs: The program contains explanation and problems for the calculation of resonance energy, molecular structure, mole concept. Rutherford's experiment. thermodynamic processes. Special course equipment package explanation mole concept, Rutherford's experiment, thermodynamic processes. Special course were designed in Science Education with the understanding that to a certain extent science values would be covered in all of the modified experiments and program models.

• 자원리싸이클링
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• 제27권2호
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• pp.63-67
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• 2018

자유에너지는 물질의 상대적인 안정도를 나타낸다. 수용액에 존재하는 이온의 종류는 다양하고 실험조건이 광범위하므로 열역학 자료가 부족하다. 이온의 표준생성엔탈피와 엔트로피로부터 표준수화엔탈피와 표준수화엔트로피의 절대값과 상대값을 구하는 방법을 설명하였다. 또한 대응원리를 이용하여 고온에서 열역학 자료를 추산하는 방법을 설명하였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.47-51
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• 1998

The GaN thick films were deposited on sapphire substrates by the chloride vapor phase epitaxy (CVPE) technique suing the GaCl3-NH3-N2 chemistry. Thermodynamic simulations were carried out to predict the optimum process windows, and the results were compared with the experiments. A large difference in the growth temperature was observed between the calculation an the experiment, and it indicated that the growth of GaN by the CVPE technique is kinetically limited.

• 한국지구과학회지
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• 제25권1호
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• pp.39-47
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• 2004

In the FMAS system the effect of iron on alumina solubility in orthopyroxene has been determined by experiments with crystalline starting mixtures of garnet and orthopyroxene of known initial compositions at 20 kb, 975$^{\circ}C$ and 25 kb, 1,200$^{\circ}C$. These data have been modeled to develop a thermodynamic method for the calculation of Al$_{2}$O$_{3}$ in orthopyroxene as a function of P, T and composition. The direct application of the alumina solubility data in the MAS system to natural assemblages could lead to significant overestimation of pressure, probably by about 5kb for the relatively common garnet-lherzolites with abot 25 mol per cent Ca + Fe$^{2+}$ in garnet and about 1 wt. per cent Al$_{2}$O$_{3}$ in orthopyroxene since the effect of Fe is similar to that of Ca and Cr$^{3+}$in reducing the alumina solubility in orthopyroxene in equilibrum with garnet relative to that in the MAS system.