• 한국산업보건학회지
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• 제15권3호
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• pp.221-231
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• 2005

In this study, occupational exposures to man-made mineral fibers (MMMFs) including glass wool, rock wool, and continuous glass filament fibers were determined and evaluated on the American Conference of Governmental Industrial Hygienists (ACGIH) Threshold Limit Value (TLV). A total of 171 personal samples collected from 4 glass wool fiber, 2 rock wool fibers, 4 continuous filament glass fiber products manufacturing and a glass fiber and rock wool insulations using industries, and determined respirable fibers concentrations using the National Institute for Occupational Safety and Health (NIOSH) Method 7400, "B counting rule. The fiber concentrations of samples from workers installing thermal insulations in a MMMF using industry showed the highest value: geometric mean (GM) = 0.73 f/cc and maximum = 2.9 f/cc, 70% of them were above the TLV, 1 f/cc. Workers' exposure level (GM= 0.032 f/cc) in the rock wool manufacturing industries was significantly higher than those of glass wool (GM=0.012 f/cc) and continuous filament glass fibers (GM=0.010 f/cc) manufacturing industries (p<0.01). No samples were more than the TLV in the MMMF manufacturing industries. There was a significant difference among companies in airborne fiber levels.

• Progress in Superconductivity
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• 제3권1호
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• pp.5-12
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• 2001

Our experimental research focuses on manipulating pinning deflects to alter the phase diagram of vortex matter, creating new vortex phases. Vortex matter offers a unique opportunity for creating and studying these novel phase transitions through precise control of thermal, pinning and elastic energies. The vortex melting transition in untwinned YB $a_2$C $u_3$ $O_{7-}$ $\delta$/ crystals is investigated in the presence of disorder induced by particle irradiation. We focus on the low disorder regime, where a glassy state and a lattice state can be realized in the same phase diagram. We follow the evolution of the first order vortex melting transition line into a continuous transition line as disorder is increased by irradiation. The transformation is marked by an upward shift in the lower critical point on the melting line. With columnar deflects induced by heavy ion irradiation, we find a second order Bose glass transition line separating the vortex liquid from a Bose glass below the lower critical point. Furthermore, we find an upper threshold of columnar defect concentration beyond which the lower critical point and the first order melting line disappear together. With point deflect clusters induced by proton irradiation, we find evidence for a continuous thermodynamic transition below the lower critical point..

• 한국염색가공학회지
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• 제29권3호
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• pp.155-161
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• 2017

In CPB(Cold-Pad-Batch) dyeing, the rubber of the padder roll is influenced by the heat, chemical and mechanical influences and thus aging of the padder roll rubber occurs. This study presents an accelerated thermal aging test of the CPB padder roll rubber with strong alkali conditions. Using Arrhenius formula of the various property values for the various aging temperatures($80^{\circ}C$, $90^{\circ}C$, $100^{\circ}C$) of the padder roll, the accelerated life predictions could be calculated. The threshold value of the property was set at different values. The hardness was set at the point where 5% degradation occurs based on the actual use conditions, and the tensile strength was set at the point where 50% degradation occurs based on the general life prediction standards. From the results of the different physical properties at differing temperatures, the Arrhenius plot could be obtained. Through the usage of the Arrhenius Equation, significant duration expectation could be predicted, and the chemical aging behavior of the CPB padder roll could be found at the arbitrary and actual temperatures.

• 한국광학회지
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• 제3권4호
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• pp.222-226
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• 1992

$Ar^{+}$레이저로 펌핑되는 Nd:glass레이저를 제작하여 그 특성을 조사하였다. 레이저 공진기는 오목거울 두 개와 98% 고반사 평면경, 그리고 Brewster 각도로 놓인 Nd:glass 의 이득 매질로 구성되었으며, 효율적인 펌핑을 위해서 $Ar^{+}$레이저 광선을 공진기 길이 방향으로 입사하여 공진모우드의 beam waist에서 초점이 맺히도록 하였다. Nd:glass의 열존도도가 작아서 흡수된 펌핑빔에 의해 생성된 잔열로 인한 매질의 손상이 우려되기 때문에 mechanical chopper 로 펌핑빔을 100Hz로 끊어서 입사하여 잔열의 생성을 줄였다. 1.5W로 펌핑될 때 Nd:glass 레이저의 출력은 70mW이었고 발진이 되는 문턱에서의 펌핑파워는 520mW이었으며 slope efficiency는 7.4%이었다.

• 한국전산구조공학회논문집
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• 제20권4호
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• pp.477-483
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• 2007

본 연구에서는 전력구나 공동구와 같은 지하 콘크리트박스구조물의 화재발생시 온도분포와 박리거동에 대한 수치해석을 수행하였다. 해석에 사용된 온도장은 터널화재에 사용하는 화재곡선을 기본으로 하고 화재시 내부공간에 대한 열유체해석을 수행하여 온도분포를 결정하였다. 박리거동은 탈수화도를 따라 콘크리트의 온도가 기준값에 도달하였을때 발생하는 것으로 하였다. 이때 박리가 일어난 요소를 제거하고 경계조건과 요소망을 재생성하여 해석을 반복수행하였다. 3개의 화재 시나리오에 따라 해석을 수행하였고, 해석결과는 각 시나리오별로 타당한 박리거동을 보여주었다. 각 시나리오에 따른 구조물의 내하력은 본 논문의 2편에서 산정되었다.

• 전기학회논문지
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• 제57권12호
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• pp.2263-2268
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• 2008

We investigated the malfunction and destruction characteristics of microcontroller devices under high power electromagnetic(HPEM) wave by magnetron. HPEM was rated at a microwave output of 0 to 1,000 W, at a frequency of 2,450${\pm}$50 MHz and was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The variation of the line length was done with flat cables. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects. The obtained results are expected to provide fundamental data for interpreting the combined mechanism of microcontroller devices in an intentional microwave environment.

• 반도체디스플레이기술학회지
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• 제7권1호
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• pp.47-51
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• 2008

The Al:Au double-layer metal electrode for use in transparent, dual emission of organic light-emitting diode (OLED) was fabricated. The electrode of Al:Au metals with various thicknesses was deposited by the vacuum thermal evaporation technique. For Al thickness of 1 nm, a bottom luminance of $4880\;cd/m^2$ was observed at 8 V. Otherwise, top luminance of $2020\;cd/m^2$ were observed at 8 V. In addition, the threshold voltages of the electrodes were 2.2 V. It was forward that the inserting 1 nm Al between LiF and Au enhanced electron injection with tunneling effect.

• 전자공학회논문지D
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• 제35D권12호
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• pp.68-74
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• 1998

본 논문에서는 electron cyclotron resonance (ECR) N₂O-플라즈마 산화막을 게이트 산화막으로 사용한 다결정 실리콘 박막 트랜지스터 (TFT)의 성능과 단채널 특성에 대하여 연구하였다. ECR NE₂O-플라즈마 게이트 산화막을 사용한 소자는 열산화막을 이용한 경우에 비해 우수한 성능과 억제된 단채널 효과를 나타낸다. 얇은 ECR N2O-플라즈마 산화막을 사용하여 n채널 TFT의 경우 3 ㎛, p채널 TFT의 경우 1㎛ 게이트 길이까지 문턱 전압 감소가 없는 소자를 얻었다. 이러한 특성 향상은 부드러운 계면, passivation 효과, 그리고 계면과 박막 내부에 존재하는 강한 Si ≡ N 결합 등에 기인한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.114-115
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• 2007

In this paper, it was demonstrated that organic thin-film transistors (OTFTs) were fabricated with the organic passivation layer by vapor deposition polymerization (VDP) processing, In order to form polymeric film as an passivation layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing, Field effect mobility, threshold voltage, and on-off current ratio with 450-nm-thick organic passivation layer were about $0.21\;cm^2/Vs$, IV, and $1\;{\times}\;10^5$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.