• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.494-500
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• 2014

Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide ($SiO_2$) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: $350^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, and $600^{\circ}C$. All samples showed semiconducting behavior and exhibited n-channel TFT. Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.

• 한국재료학회지
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• 제8권6호
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• pp.484-492
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• 1998

단결정 Si기판위의 Co/Ti 이중층으로부터 형성된 Co 실리사이드의 에피텍셜 성장기구에 대하여 조사하였다. 실리사이드화 과정중 Ti원자들이 저온상의 CoSi결정구조의 tetrahedral site들을 미리 점유해 있음으로 인하여, $CoSi_{2}$ 결정구조로 바뀌는 과정에서 Si원자들이 나중에 제위치를 차지하기 어렵게 되는 효과 때문이다. 그리고 Ti중간층은 반응의 초기단계에 Co-Ti-O 삼원계 화합물을 형성하는데, 이 화합물은 실리사이드화 과정중 반응 제어층으로 작용하여 에피텍셜 실리사이드 형성에 중요한 역할을 한다. 최종 열처리 층구조 Ti oxide/Co-Ti-Si/epi/$Cosi_{2}$(100) Si 이었다.

• 한국재료학회지
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• 제17권9호
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• pp.453-457
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• 2007

Interest in use of ink-jet printing for pattern-on-demand fabrication of metal interconnects without complicated and wasteful etching process has been on rapid increase. However, ink-jet printing is a wet process and needs an additional thermal treatment such as an annealing process. Since a metal ink is a suspension containing metal nanoparticles and organic capping molecules to prevent aggregation of them, the microstructure of an ink-jet printed metal interconnect 'as dried' can be characterized as a stack of loosely packed nanoparticles. Therefore, during being treated thermally, an inkjet-printed interconnect is likely to evolve a characteristic microstructure, different from that of the conventionally vacuum-deposited metal films. Microstructure characteristics can significantly affect the corresponding electrical and mechanical properties. The characteristics of change in microstructure and electrical resistivity of inkjet-printed silver (Ag) films when annealed isothermally at a temperature between 170 and $240^{\circ}C$ were analyzed. The change in electrical resistivity was described using the first-order exponential decay kinetics. The corresponding activation energy of 0.44 eV was explained in terms of a thermally-activated mechanism, i.e., migration of point defects such as vacancy-oxygen pairs, rather than microstructure evolution such as grain growth or change in porosity.

• 폴리머
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• 제33권3호
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• pp.198-202
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• 2009

Poly(ethylene terephthalate)(PET)의 올리고머인 oligo(ethylene terephthalate)(OET), oligo(ethylene succinate-co-terephthalate)(OEST) 및 oligo(butylene succinate-co-terephthalate)(OBST)를 각각 합성한 후, Pseudomonas cepacia 유래의 lipase PS를 사용하여, 올리고머의 분해실험을 실시, 분해시간에 의한 잔존중량 및 분해생성물의 분석에 의한 생분해기구를 해명함을 목적으로 하였다. OEST와 OBST의 합성에서는 배합 몰비에 대한 조성비의 조절이 가능한 올리고머를 얻을 수 있었으며, 조성비의 상이함에 의해 열적 성질이 현저한 차이가 있음을 확인하였다. 분해실험에서는 OEST, OBST 모두 lipase PS에 의해 분해가 발생되나, terephthalic acid의 조성이 높아질수록 분해능력이 저하됨을 확인하였고, lipase PS는 지방족에 가까운 조성을 가진 polyester를 쉽게 분해시킴을 확인하였다.

• Nuclear Engineering and Technology
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• 제6권2호
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• pp.97-111
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• 1974

천연 점토 광물질의 ion교환능은 비교적 낮지만, 여러가지 황성화법에 의하여 교환능의 개설이 기대된다. 본 연구에 있어서는 점토 광물질 중에서도 교환 흡착능이 비교적 큰 vermiculite를 사용하여 저준위 방사성 액체 폐기물을 처리하는데 있어서 효과적인 이용 방법을 검토하기 위하여 vermiculite의 이온교환 기능에 관한 기초 연구를 실험하였다. Cs 이온의 교환능 및 분배계수는 Cs-l37의 방사능도를 Scintillation counter로 측정하였고, 천연 및 활성화된 vermiculite에 대한 특성은 X-ray회절과 전자회절에 의한 분석 및 열시차 분석과 아울러 전자 현미경에 의한 검사에 의거 해석하였다. Na-vermiculite에 의한 Cs이온의 교환 및 흡착에 있어서는 결정격자의 C-axis spacing의 수축을 초래하게 되고, Cs이온의 교환능은 주로 C-axis spacing의 크기에 좌우된다고 본다. Na-vermiculite에 의한 Cs이온의 교환 및 흡착 연구를 수행함으로서 저준위 방사성 핵종의 처리 분만 아니라, 고 방사성 폐액 저장 tank의 외각 충진 물질로서 Cs-137과 같이 반감기가 긴 핵종의 leakage로 인한 지하수 오염을 방지할 수 있는 재질로서도 적합하다.

• 멤브레인
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• 제22권3호
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• pp.155-170
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• 2012

연료전지는 석유엔진과 비교하여 높은 전류밀도와 효율성, 그리고 친환경적이기 때문에 21세기 들어 대체 발전시스템으로서 각광받아왔다. 연료전지 시스템에서 고분자 전해질 막은 핵심부품으로써 현재 Nafion막이 연료전지시스템에서 사용 중이지만 높은 제조단가와 고온에서 낮은 전도도를 가지는 단점을 가지고 있다. 그러므로 많은 학자들이 낮은 제조단가, 높은 물리적 특성들을 달성하기 위한 연구를 진행하여 왔으며 연료전지의 상용화와 동시에 고성능의 연료전지의 개발을 위하여 많은 방법들이 개발되어 왔다. 그중, 유무기 복합막은 유기물과 무기물의 물성을 균일하게 조합할 수 있으므로 잠재성을 가지고 있는 제조방법이다. 본고에서는 다양한 무기물이 사용되어 제조된 유무기 복합막의 연구동향에 대하여 조사하였다.

• Archives of Pharmacal Research
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• 제25권1호
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• pp.39-44
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• 2002

Recently, we have reported that 2-bromopropane might have an immunotoxic potential in rats when exposed for 28 days. In the present studies, the possibility of 2i-deoxyguanosine abduct formation by 2- bromopropane was investigated in vitro to elucidate molecular mechanism of 2-bromopropane-induced immunosuppression. $N^7-Guanine adduct$ of 2'-bromopropane (i.e., $N^7-isopropyl$ guanine) was chemically synthesized and structurally characterized by analysis of UV,$^1H-NMR,{\;}^{13}C-NMR$, COSY and fast atom bombardment mass spectrometry to use as a reference material. Incubation of 2'-deoxyguanosine with an excess amount of 2-bromopropane in PBS buffer solution, pH 7.4, at $37^{\circ}C$ for 16 h, followed by a thermal hydrolysis, produced a detectable amount of $N^7-isopropyl$ guanine by an HPLC and UV analysis. The present results suggest that 2-bromopropane might form a DNA adduct in $N^7-position$ of 2'-deoxyguanosine at 3 Physiological condition.

• Journal of Welding and Joining
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• 제34권6호
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• pp.42-46
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• 2016

Hydrogen assisted cracking (HAC) is one of the most complicated problem in welding. Huge amount of studies have been done for decades. Based on them, various standards have been established to avoid HAC. But it is still a chronic problem in industrial field. It is well known that the main causes of the hydrogen crack are residual stress, crack susceptible micro structures and a certain critical level of hydrogen concentration. Even though the exact generating mechanism is unclear till today, it has been reported that the hydrogen level in the weld metal should be managed less than a certain amount to prevent it. Matsuda studied that the residual hydrogen level in the weld metal can be varied even if the initial hydrogen content is same. It is also insisted in this report that the residual hydrogen concentration is in stronger correlation with hydrogen crack than the initial hydrogen content. But, in practical point of view, the residual hydrogen is still hard to consider because measuring hydrogen level is time and cost consuming process. In this regard, numerical analysis is the only solution for considering the residual hydrogen content. Meanwhile, Takahashi showed the possibility of predicting the residual hydrogen by a rigorous FE analysis. But, few commercial software suitable for solving the weld metal hydrogen has been reported yet. In this study, two dimensional thermal - hydrogen coupled analysis was developed by using the commercial FE software MARC. Since the governing equation of the hydrogen diffusion is similar to the heat transfer, it is shown that the heat transfer FE analysis in association with hydrogen diffusion property can be used for hydrogen diffusion analysis. A series of simulation was performed to verify the accuracy of the model. For BOP (Bead-On-Plate) and the multi-pass butt welding simulations, remaining hydrogen contents in the weld metal is well matched with measurements which are referred from Kim and Masamitsu.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 1994년도 제3회 학술강연회논문집
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• pp.21-26
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• 1994

Conventional electroexplosive devices (EED) commonly use a very small metal bridgewire to ignite explosive materials i.e. pyrotechnics, primary and secondary explosives. The use of semiconductor devices to replace “hot-wire” resistance heating elements in automotive safety systems pyrotechnic devices has been under development for several years. In a typical 1 amp/1 watt electroexplosive devices, ignition takes place a few milliseconds after a current pulse of at least 25 mJ is applied to the bridgewire. In contrast, as for a SCB devices, ignition takes place in a few tens of microseconds and only require approximately one-tenth the input energy of a conventional electroexplosive devices. Typically, when SCB device is driven by a short (20 $\mu\textrm{s}$), low energy pulse (less than 5 mJ), the SCB produces a hot plasma that ignites explosive materials. The advantages and disadvantages of this technology are strongly dependent upon the particular technology selected. To date, three distinct technologies have evolved, each of which utilizes a hot, silicon plasma as the pyrotechnic initiation element. These technologies are 1.) Heavily doped silicon as the resistive heating initiation mechanism, 2.) Tungsten enhanced silicon which utilizes a chemically vapor deposited layer of tungsten as the initiation element, and 3.) a junction diode, fabricated with standard CMOS processes, which creates the initial thermal environment by avalanche breakdown of the diode. This paper describes the three technologies, discusses the advantages and disadvantages of each as they apply to electroexplosive devises, and recommends a methodology for selection of the best device for a particular system environment. The important parameters in this analysis are: All-Fire energy, All-Fire voltage, response time, ease of integration with other semiconductor devices, cost (overall system cost), and reliability. The potential for significant cost savings by integrating several safety functions into the initiator makes this technology worthy of attention by the safety system designer.

• 한국세라믹학회지
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• 제38권11호
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• pp.1000-1007
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• 2001

진공관형 태양열 집열기에서는 열관(heat pipe)과 붕규산염 유리관의 안정된 접합이 이를 장시간 사용하는데 매우 중요하다. 구리와 유리는 그 물리.화학적 성질에 큰 차이가 있어 접합하기가 어려움으로 구리관 표면에 유리와 화학적 결합이 용이한 산화막을 생성시켜 접합하도록 구리의 산화상태, 접합계면 및 접합강도를 XRD, SEM, EDS 및 인정시험기로 측정하였다. 순수 구리는 $600^{\circ}C$ 이하로 열처리하였을 때 Cu$_2$O 산화막을 생성하였으나 그 이상의 온도에서는 CuO 산화막을 형성하였으며 후자의 산화막은 구리와의 접합력이 매우 불량하였다. 그러나 붕사로 표면 처리를 하였을 경우에는 80$0^{\circ}C$에서도 Cu$_2$O 산화막 만이 발견되었다. Cu$_2$O 산화막을 생성시킨 구리관과 붕규산염 유리관을 Housekeeper법으로 접합하였을 경우 354.4N의 접합강도를 얻을 수 있었으며 열충격 저항성도 매우 뛰어났다.