• Title/Summary/Keyword: Thermal mechanism

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Solution-Processed Inorganic Thin Film Transistors Fabricated from Butylamine-Capped Indium-Doped Zinc Oxide Nanocrystals

  • Pham, Hien Thu;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.35 no.2
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    • pp.494-500
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    • 2014
  • Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide ($SiO_2$) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: $350^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, and $600^{\circ}C$. All samples showed semiconducting behavior and exhibited n-channel TFT. Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.

Epitaxial Cobalt Silicide Formation using Co/Ti/(100) Si Structure (Co/Ti(100)Si 이중층을 이용한 에피텍셜 Co 실리사이드의 형성)

  • Kwon, Young-Jae;Lee, Chong-Mu;Bae, Dae-Lok;Kang, Ho-Kyu
    • Korean Journal of Materials Research
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    • v.8 no.6
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    • pp.484-492
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    • 1998
  • The formation mechanism of the epitaxial cobalt silicide from Co/Ti/OOO) Si structure has been investigated. The transition temperature of CoSi to CoSi, was found to increase with increasing the Ti interlayer thickness, which may be owing to the occupation of the tetrahedral sites by Ti atoms in the CoSi crystal structure as well as the blocking effect of the Ti interlayer on the diffusion of Co. Also, the Co- Ti-O ternary compound formed at the metal! Si interface at the begining of silicidation, which seems to play an important role in epitaxial growth of Co silicide. The final layer structures obtained after a rapid thermal annealing of the Cot Ti/( 100) Si bi-layer structure turned out to be Ti oxide/Co- Ti-Si/epi-$CoSi_2$/OOO)

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Microstructure and Electrical Resistivity of Ink-Jet Printed Nanoparticle Silver Films under Isothermal Annealing (잉크젯 프린팅된 은(Ag) 박막의 등온 열처리에 따른 미세조직과 전기 비저항 특성 평가)

  • Choi, Soo-Hong;Jung, Jung-Kyu;Kim, In-Young;Jung, Hyun-Chul;Joung, Jae-Woo;Joo, Young-Chang
    • Korean Journal of Materials Research
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    • v.17 no.9
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    • pp.453-457
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    • 2007
  • Interest in use of ink-jet printing for pattern-on-demand fabrication of metal interconnects without complicated and wasteful etching process has been on rapid increase. However, ink-jet printing is a wet process and needs an additional thermal treatment such as an annealing process. Since a metal ink is a suspension containing metal nanoparticles and organic capping molecules to prevent aggregation of them, the microstructure of an ink-jet printed metal interconnect 'as dried' can be characterized as a stack of loosely packed nanoparticles. Therefore, during being treated thermally, an inkjet-printed interconnect is likely to evolve a characteristic microstructure, different from that of the conventionally vacuum-deposited metal films. Microstructure characteristics can significantly affect the corresponding electrical and mechanical properties. The characteristics of change in microstructure and electrical resistivity of inkjet-printed silver (Ag) films when annealed isothermally at a temperature between 170 and $240^{\circ}C$ were analyzed. The change in electrical resistivity was described using the first-order exponential decay kinetics. The corresponding activation energy of 0.44 eV was explained in terms of a thermally-activated mechanism, i.e., migration of point defects such as vacancy-oxygen pairs, rather than microstructure evolution such as grain growth or change in porosity.

Synthesis and Biodegradation Behavior of Poly(ethylene terephthalate) Oligomers (폴리(에틸렌 테레프탈레이트)(PET) 올리고머의 합성과 생분해 거동)

  • Lee, Chan-Woo;Chung, Jin-Do
    • Polymer(Korea)
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    • v.33 no.3
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    • pp.198-202
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    • 2009
  • Oligo(ethylene terephthalate)(OET), oligo(ethylene succinate-co-terephthalate)(OEST) and oligo(butylene succinate-co-terephthalate)(OBST), which are part of the poly(ethylene terephthalate)(PET) oligomer, were synthesized. Degradation test of oligomers carried out by the presence of lipase PS. There were two objectives in the experiment: first, to measure the weight remaining of the PET oligomer as increasing degradation time, and second to examine the degradation mechanism by analyzing the resulting degraded product. In the synthesis of OEST and OBST, by controlling the feed ratio of both OEST and OBST, we were able to obtain oligomer of different composition ratios. The various composition ratios resulted in oligomer of vastly different thermal properties. We observed that both OEST and OBST were degraded using lipase PS, but as the composition of terephthalic acid was increased, the lipase PS became less effective. We confirmed that the lipase PS easily decomposed polyester of the aliphatic compound.

Studies on the Sorption and Fixation of Cesium by Vermiculite (II)

  • Lee, Sang-Hoon
    • Nuclear Engineering and Technology
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    • v.6 no.2
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    • pp.97-111
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    • 1974
  • The adsorption mechanism of Cs-137 in low level radioactive solution by vermiculite treated with Na ion is studied in order to investigate its effective utilization for the radioactive effluent treatment. The beneficial role of Na-vermiculite is that Na ion can induce the wider c-axis spacing in which Cs ion can be sorbed in vermiculite. Cation exchange capacity and distribution coefficient of cesium seems to be influenced by the variation of c-axis spacing of vermiculite. Comparative identification and detection with the characteristic analyses of X-ray diffraction and electron diffraction patterns, diffrential thermal analysis and electron microscopy of Na-, K- and Cs-vermiculite are studied for the phemomena of Cs adsorption by vermiculite. This importance of the utilization in terms of adsorption and fixation of cesium involving vermiculite is discussed. It is found that the Na-vermiculite is valuable outside charging material for high level radioactive liquid waste storage tank of underground to protect the pollution of the underground water.

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Research Trend of Organic/Inorganic Composite Membrane for Polymer Electrolyte Membrane Fuel Cell (고분자 전해질 연료전지용 유.무기 복합막의 연구개발동향)

  • Kim, Deuk Ju;Nam, Sang Yong
    • Membrane Journal
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    • v.22 no.3
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    • pp.155-170
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    • 2012
  • Fuel cells have been considered as alternative power generation system in the twenty-first century because of eco-friendly system, high power density and efficiency compare with petroleum engine system. Proton exchange membranes (PEMs) are the key components in fuel cell system. Currently, Nafion has been used in fuel cell system. However, Nafion has disadvantages such as low conductivity at high temperature and high cost. The researchers have focused to reach the high properties such as high proton conductivity, low permeability to fuel, good chemical/thermal stability, good mechanical properties and low manufacturing cost. Various methods have been developed for preparation of proton exchange membrane with high performance and commercialization of fuel cell system. The hybrid organic/inorganic membrane has the potentials to provide a unique combination of organic and inorganic properties with improved proton conductivity and mechanical property at high temperatures. So, this paper presents an overview of research trend for the composite membranes prepared by organic/inorganic system using various inorganic materials.

Synthesis, Characterization and in Vitro Identification of $N^7-Guanine$ Adduct of 2-Bromopropane

  • Zhao, Long-Xuan;Kim, Eun-Kyung;Lim, Hyun-Tae;Moon, Yoon-Soo;Kim, Nam-Hee;Kim, Tae-Hyung;Choi, Heesung;Chae, Whigun;Jeong, Tae-Cheon;Lee, Eung-Seok
    • Archives of Pharmacal Research
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    • v.25 no.1
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    • pp.39-44
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    • 2002
  • Recently, we have reported that 2-bromopropane might have an immunotoxic potential in rats when exposed for 28 days. In the present studies, the possibility of 2i-deoxyguanosine abduct formation by 2- bromopropane was investigated in vitro to elucidate molecular mechanism of 2-bromopropane-induced immunosuppression. $N^7-Guanine adduct$ of 2'-bromopropane (i.e., $N^7-isopropyl$ guanine) was chemically synthesized and structurally characterized by analysis of UV,$^1H-NMR,{\;}^{13}C-NMR$, COSY and fast atom bombardment mass spectrometry to use as a reference material. Incubation of 2'-deoxyguanosine with an excess amount of 2-bromopropane in PBS buffer solution, pH 7.4, at $37^{\circ}C$ for 16 h, followed by a thermal hydrolysis, produced a detectable amount of $N^7-isopropyl$ guanine by an HPLC and UV analysis. The present results suggest that 2-bromopropane might form a DNA adduct in $N^7-position$ of 2'-deoxyguanosine at 3 Physiological condition.

A Numerical Study of the Residual Hydrogen Concentration in the Weld Metal (용접금속 잔류수소농도의 수치해석 연구)

  • Yoo, Jinsun;Ha, Yunsok;S.R., Rajesh
    • Journal of Welding and Joining
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    • v.34 no.6
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    • pp.42-46
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    • 2016
  • Hydrogen assisted cracking (HAC) is one of the most complicated problem in welding. Huge amount of studies have been done for decades. Based on them, various standards have been established to avoid HAC. But it is still a chronic problem in industrial field. It is well known that the main causes of the hydrogen crack are residual stress, crack susceptible micro structures and a certain critical level of hydrogen concentration. Even though the exact generating mechanism is unclear till today, it has been reported that the hydrogen level in the weld metal should be managed less than a certain amount to prevent it. Matsuda studied that the residual hydrogen level in the weld metal can be varied even if the initial hydrogen content is same. It is also insisted in this report that the residual hydrogen concentration is in stronger correlation with hydrogen crack than the initial hydrogen content. But, in practical point of view, the residual hydrogen is still hard to consider because measuring hydrogen level is time and cost consuming process. In this regard, numerical analysis is the only solution for considering the residual hydrogen content. Meanwhile, Takahashi showed the possibility of predicting the residual hydrogen by a rigorous FE analysis. But, few commercial software suitable for solving the weld metal hydrogen has been reported yet. In this study, two dimensional thermal - hydrogen coupled analysis was developed by using the commercial FE software MARC. Since the governing equation of the hydrogen diffusion is similar to the heat transfer, it is shown that the heat transfer FE analysis in association with hydrogen diffusion property can be used for hydrogen diffusion analysis. A series of simulation was performed to verify the accuracy of the model. For BOP (Bead-On-Plate) and the multi-pass butt welding simulations, remaining hydrogen contents in the weld metal is well matched with measurements which are referred from Kim and Masamitsu.

AN INTRODUCTION TO SEMICONDUCTOR INITIATION OF ELECTROEXPLOSIVE DEVICES

  • Willis K. E.;Whang, D. S.;Chang, S. T.
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 1994.11a
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    • pp.21-26
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    • 1994
  • Conventional electroexplosive devices (EED) commonly use a very small metal bridgewire to ignite explosive materials i.e. pyrotechnics, primary and secondary explosives. The use of semiconductor devices to replace “hot-wire” resistance heating elements in automotive safety systems pyrotechnic devices has been under development for several years. In a typical 1 amp/1 watt electroexplosive devices, ignition takes place a few milliseconds after a current pulse of at least 25 mJ is applied to the bridgewire. In contrast, as for a SCB devices, ignition takes place in a few tens of microseconds and only require approximately one-tenth the input energy of a conventional electroexplosive devices. Typically, when SCB device is driven by a short (20 $\mu\textrm{s}$), low energy pulse (less than 5 mJ), the SCB produces a hot plasma that ignites explosive materials. The advantages and disadvantages of this technology are strongly dependent upon the particular technology selected. To date, three distinct technologies have evolved, each of which utilizes a hot, silicon plasma as the pyrotechnic initiation element. These technologies are 1.) Heavily doped silicon as the resistive heating initiation mechanism, 2.) Tungsten enhanced silicon which utilizes a chemically vapor deposited layer of tungsten as the initiation element, and 3.) a junction diode, fabricated with standard CMOS processes, which creates the initial thermal environment by avalanche breakdown of the diode. This paper describes the three technologies, discusses the advantages and disadvantages of each as they apply to electroexplosive devises, and recommends a methodology for selection of the best device for a particular system environment. The important parameters in this analysis are: All-Fire energy, All-Fire voltage, response time, ease of integration with other semiconductor devices, cost (overall system cost), and reliability. The potential for significant cost savings by integrating several safety functions into the initiator makes this technology worthy of attention by the safety system designer.

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Bonding Mechanism of Direct Copper to Glass Seal in an Evacuated Tube Solar Collector (태양열 집열기에 사용되는 구리-유리관 접합기구)

  • 김철영;남명식;곽희열
    • Journal of the Korean Ceramic Society
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    • v.38 no.11
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    • pp.1000-1007
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    • 2001
  • In an evacuated tube solar collector, the stable sealing of the heat pipe to the glass tube is important for the collector to use for a long period of time. The sealing of copper tube to the glass is quite difficult because of the large differences in the physical and chemical properties of the two materials. In this study, therefore, a proper copper oxide layer was induced to improve the chemical bonding of the two materials, and the oxidation state of copper and the interface between copper and glass were examined by XRD, SEM and EDS. Its bonding strength was also measured. Cu$_2$O was formed when the bare copper was heat-treated under 600$^{\circ}C$, while CuO oxide layer was formed above that temperature. The bonding state of CuO to the copper was very poor. The borate treatment of the copper, however, extend the stable forming of Cu$_2$O layer to 800$^{\circ}C$. Borosilicate glass tube was sealed to a copper tube by Housekeeper method only when the sealing part was covered with Cu$_2$O layer. The bonding strength at the interface was measured 354.4N, its thermal shock resistance was acceptable.

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