• Journal of Biosystems Engineering
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• v.41 no.3
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• pp.263-272
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• 2016

Purpose: Pulse crop damage due to wild birds is a serious problem, to the extent that the rate of damage during the period of time between seeding and the stage of cotyledon reaches 45.4% on average. This study investigated a method of fundamentally blocking birds from eating crops by conducting vinyl mulching after seeding and identifying the growing locations for beans to perform punching. Methods: Infrared (IR) sensors that could measure the temperature without contact were used to recognize the locations of soybean cotyledons below vinyl mulch. To expand the measurable range, 10 IR sensors were arranged in a linear array. A sliding mechanical device was used to reconstruct the two-dimensional spatial variance information of targets. Spatial interpolation was applied to the two-dimensional temperature distribution information measured in real time to improve the resolution of the bean coleoptile locations. The temperature distributions above the vinyl mulch for five species of soybeans over a period of six days from the appearance of the cotyledon stage were analyzed. Results: During the experimental period, cases where bean cotyledons did and did not come into contact with the bottom of the vinyl mulch were both observed, and depended on the degree of growth of the bean cotyledons. Although the locations of bean cotyledons could be estimated through temperature distribution analyses in cases where they came into contact with the bottom of the vinyl mulch, this estimation showed somewhat large errors according to the time that had passed after the cotyledon stage. The detection results were similar for similar types of crops. Thus, this method could be applied to crops with similar growth patterns. According to the results of 360 experiments that were conducted (five species of bean ${\times}$ six days ${\times}$ four speed levels ${\times}$ three repetitions), the location detection performance had an accuracy of 36.9%, and the range of location errors was 0-4.9 cm (RMSE = 3.1 cm). During a period of 3-5 days after the cotyledon stage, the location detection performance had an accuracy of 59% (RMSE = 3.9 cm). Conclusions: In the present study, to fundamentally solve the problem of damage to beans from birds in the early stage after seeding, a working method was proposed in which punching is carried out after seeding, thereby breaking away from the existing method in which seeding is carried out after punching. Methods for the accurate detection of soybean growing locations were studied to allow punching to promote the continuous growth of soybeans that had reached the cotyledon stage. Through experiments using multiple IR sensors and a sliding mechanical device, it was found that the locations of the crop could be partially identified 3-5 days after reaching the cotyledon stage regardless of the kind of pulse crop. It can be concluded that additional studies of robust detection methods considering environmental factors and factors for crop growth are necessary.

• Journal of Sensor Science and Technology
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• v.24 no.4
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• pp.264-269
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• 2015

An infrared (IR) bolometer measures the change of resistance by absorbing incident IR radiation and generates a signal as a function of the radiation intensity. Since a bolometer requires temperature stabilization and light filtering except for the infrared rays, it is essential for the device to be packaged meeting conditions that above mentioned. Minimization of heat loss is needed in order to stabilize temperature of bolometer. Heat loss by conduction or convection requires a medium, so the heat loss will be minimized if the medium is a vacuum. Therefore, vacuum packaging for bolometer is necessary. Another important element in bolometer packaging is germanium (Ge) window, which transmits IR radiation to heat the bolometer. To ensure a complete transmittance of IR light, anti-reflection (AR) coatings are deposited on both sides of the window. Although the transmittance of Ge window is high for IR rays, it is difficult to use frequently in low-price IR bolometer because of its high price. In this paper, we fabricated IR window by utilizing silicon (Si) substrate instead of Ge in order to reduce the cost of bolometer packaging. To enhance the IR transmittance through Si substrate, it is textured using Reactive Ion Etching (RIE). The texturing process of Si substrate is performed along with the change of experimental conditions such as gas ratio, pressure, etching time and RF power.

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.279-285
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• 2001

The capnograph system for determining the partial pressure of carbon dioxide in the blood of a patient was developed based on the NDIR(non-dispersive infrared) absorption technology. NDIR gas analyzing method requires an optical absorption chamber and signal processing hardware. In this paper, we have designed and implemented NDIR type $CO_2$ gas chamber in consideration of the time response characteristics and lamp chopping frequency. And we have implemented signal processing hardware using two infrared sources to reduce the thermal background effect. The implemented gas chamber and signal processing hardware were tested in the temperature variation experiment and human expiratory experiment. The results showed that the system could produce a stable output signal and a good $CO_2$ gas concentration curve like a typical capnogram.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.103-110
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• 1998

Pyroelectric infrared detectors based on La-modified $PbTiO_{3}$ (PLT) thin films have been fabricated by RF magnetron sputtering and rnicrornachining technology. The detectors form $Pb_{l-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.05) thin film ferroelectric capacitors epitaxially grown by RF magnetron sputtering on Pt/MgO (100) substrate. The sputtered PLT thin film exhibits highly c-axis oriented crystal structure that no poling treatment for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency. Polymide is coated on top of the sensing elements to support the fragile structure and the backside of the MgO substrate is selectively etched to reduce the heat loss. The sensing element exhibited a very high detectivity D* of $8.5{\times}10^{8}cm{\cdot}\sqrt{Hz}/W$ at room temperature and it is about 100 times higher than the case of micromachining technology is not used. A sensing system that detects the position as well as the existence of a human body is realized using the array sensor.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.379-384
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• 2015

An infrared image sensor is a core device in a thermal imaging system. The fabrication method of a focal plane array (FPA) is a key technology for a high resolution infrared image sensor. Each pixels in the FPA have $Si_3N_4/SiO_2$ membranes including legs to deposit bolometric materials and electrodes on Si readout circuits (ROIC). Instead of polyimide used to form a sacrificial layer, the feasibility of an amorphous silicon (${\alpha}-Si$) was verified experimentally in a $8{\times}8$ micro-bolometer array with a $50{\mu}m$ pitch. The elimination of the polyimide sacrificial layer hardened by a following plasma assisted deposition process is sometimes far from perfect, and thus requires longer plasma ashing times leading to the deformation of the membrane and leg. Since the amorphous Si could be removed in $XeF_2$ gas at room temperature, however, the fabricated micro-bolomertic structure was not damaged seriously. A radio frequency (RF) sputtered nickel oxide film was grown on a $Si_3N_4/SiO_2$ membrane fabricated using a low stress silicon nitride (LSSiN) technology with a LPCVD system. The deformation of the membrane was effectively reduced by a combining the ${\alpha}-Si$ and LSSiN process for a nickel oxide micro-bolometer.

• Journal of Satellite, Information and Communications
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• v.12 no.3
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• pp.15-21
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• 2017

Following the successful launch of KOMPSAT-3 in May 2012, KOMPSAT-5 in August 2013, and KOMPSAT-3A in March 2015 have succeeded in launching the integrated operation of optical, radar and thermal infrared sensors in Korea. We have established a foundation to utilize the characteristics of each sensors. In order to overcome limitations in the range of application and accuracy of the application of a single sensor, multi-sensor image fusion techniques have been developed which take advantage of multiple sensors and complement each other. In this paper, we introduce the development of software (InFusion) for multi-sensor image fusion and valued-added product generation using KOMPSAT series. First, we describe the characteristics of each sensor and the necessity of fusion software development, and describe the entire development process. It aims to increase the data utilization of KOMPSAT series and to inform the superiority of domestic software through creation of high value-added products.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.239-246
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• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• Applied Chemistry for Engineering
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• v.34 no.3
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• pp.207-212
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• 2023

Near-infrared (NIR) absorbing dyes have been applied to various applications such as optical filters, biotechnology, energy storage and conversion, coating additive, and traditionally information-storage materials. Because image sensors used in cellphones and digital cameras have sensitivity in the NIR region, the NIR cut-off filter is essential to achieving more clear images. As energy storage and conversion have been important, diverse NIR absorbing materials have been developed to extend the absorption region to the NIR region, and NIR absorbing materials-based research has proceeded to improve device performances. Adding NIR-absorbing dye with a photo-thermal effect to a self-healable coating system has been attractive for future mobility technology, and more effective self-healing properties have been reported. In this report, the chemical structures of representative NIR-absorbing dyes and state of the art research based on NIR-absorbing dyes are introduced.

• Journal of Sensor Science and Technology
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• v.3 no.2
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• pp.74-80
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• 1994

Silicon direct bonding technology is very attractive for both silicon-on-insulator devices and sensor fabrication because of its thermal stress free structure and stability. The process of SDB includes hydration of silicon wafer and heat treatment in a wet oxidation furnace. After hydration process, hydroxyl groups of silicon wafer were analyzed by using Fourier transformation-infrared spectroscopy. In case of hydrophilic treatment using a ($H_{2}O_{2}\;:\;H_{2}SO_{4}$) solution, hydroxyl groups are observed in a broad band around the 3474 $cm^{-1}$ region. However, hydroxyl groups do not appear in case of diluted HF solution. The bonded wafer was etched by using tetramethylammonium hydroxide etchant. The surface of the self etch-stopped silicon dioxide is completely flat, so that it can be used as sensor applications such as pressure, flow and acceleration, etc..

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.