• 건축역사연구
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• 제20권1호
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• pp.23-39
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• 2011

The Sungnyemun roofing tiles were twice disassembled for maintenance work, in 1963 and 1997, and modern tiles were applied in 1997. However, besides differing in visual appearance, the modern tiles had distinctly different physical properties. A study has been carried out on 22 different tiles, including original Sungnyemun tiles, modern tiles applied during maintenance, traditional tiles made by tile-makers, and others, to examine their physical properties, such as bending strength, frost resistance, absorption, whole-rock magnetic susceptibility, chromaticity, differential thermal analysis, and other characteristics. Since the method of making modern tiles involves compressing clay in a vacuum, modern tiles showed relatively greater bending strength and specific gravity, while Sungnyemun tiles and those made by tile-makers, in comparison, demonstrated less bending strength and specific gravity owing to their production method of 'treading,' in which clay is mixed by having someone tread upon it repeatedly. Over time, the absorption rate of the original tile used for Sungyemun gradually decreased from 21% to 14.7%; traditional tiles from tile-makers showed absorption rates of 17%, while the absorption rate of modern tiles was just 1%, which is significantly low. As for frost resistance, Sungnyemun tiles and traditional tiles from tile-makers showed cracking and exfoliation after being subjected to testing 4 or 5 times, while slight cracking was seen on the surface for modern tiles after 1ngy, or 3 times. In other words, no significant difference from influence by frost was found. According to the results of differential thermal analysis, the plastic temperature was shown to have been no less than 1, $on^{\circ}C$ for all types of tile, and cristobalite was measuredthrough XRD analysis from a Sungnyemun female tile applied during maintenance in 1963, which appeared to have been plasticized at between $1,200^{\circ}C{\sim}1,300^{\circ}C$. Based on these research results on the physical properties of tiles from the Sungnyemun roof, a fundamental production method for tiles to be applied in the restoration of Sungnyemun has been identified.

• 한국지형학회지
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• 제25권4호
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• pp.89-101
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• 2018

In Mt. Halla, an arctic-alpine plant Diapensia lapponica var. obovata largely clings to rock surfaces. We observed the rock-surface temperatures of a rocky ridge on the summit area of the mountain from late April 2009 to early May 2010 in order to examine the diurnal and annual temperature variations and the thermal amplitude. We also investigated temperature regimes such as the frequency of freeze-thaw cycles and the temperature change, which might endanger the habitat through frost weathering. For comparison of slope aspects, temperature monitoring was carried out on the north and south faces of the same rocky ridge. The south face experiences the high daily maximum rock-surface temperatures and the high thermal amplitudes during the unfreezing season of May to November 2009. The temperature regimes are considered to exert physiological stress to the arctic-alpine plant. In addition, the south face shows the high frequency of freeze-thaw cycles during the seasonal freezing period of December 2009 to April 2010. This indicates that the south face is susceptible the exfoliation and granular disintegration of rock surfaces, which results in habitat destruction. As a consequence, the south face is believed to be less favorable for the establishment and growth of the arctic-alpine plant than the north face on the summit area of Mt. Halla.

• 청정기술
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• 제15권2호
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• pp.102-108
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• 2009

본 연구에서는 폴리락틱산(PLA)의 용융강도를 향상시키기 위하여 몬모릴로나이트(MMT), 기능성 단량체인 글리시딜 메타크릴레이트(GMA)와 반응개시제를 함유한 PLA를 이축압출기로 개질한 후 열적 특성과 및 유변학적 특성을 조사하였으며, X선 회절장치(XRD) 및 투과전자현미경(TEM) 사진을 이용하여 MMT의 분산도를 측정하였다. 이 나노복합체의 $T_g$는 GMA 함량이 증가하면 감소하는 경향을 보였으나, MMT의 양에는 크게 영향을 받지 않았다. 또한 표면분석에 의해 MMT의 양이 증가할수록 박리형(exfoliation) 보다는 삽입형(intercalation)에 가까운 나노복합체가 형성된 것을 확인하였다. 복합점도 및 저장탄성률은 MMT의 첨가에 의해 크게 증가되었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• 폴리머
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• 제29권3호
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• pp.248-252
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• 2005

다양한 조성을 갖는 폴리프로필렌(PP)/몬모릴로나이트(MMT) 나노복합체를 이축압출기를 이용하여 용융혼합 법으로 제조하였다. 본 연구에서는 MMT의 박리를 위하여 MAH-g-PP를 상용화제로 사용하였고, 제조된 나노복합체를 X-ray 회절(X-ray diffraction, XRD)과 투과전자현미경(Transmission Electron Microscope, TEM)을 통해 MMT가 박리된 것을 확인하였다. PP/MMT 나노복합체의 제조에 사용한 MMT는 난연제와 상승효과를 발휘하여 난연제의 양을 절반가까이 줄였을 경우에도 우수한 난연효과를 나타내었다. PP/MMT 나노복합체는 순수 PP보다 기계적 물성과 열적 물성이 증가하였고, 난연성은 UL 94 V-0로 매우 우수하였다.

• 폴리머
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• 제25권3호
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• pp.421-426
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• 2001

Montmorillonite (MMT)의 층간에 poly(${varepsilon}-caprolactone$) diol과 반응할 수 있는 -COOH기를 삽입하기 위하여 11-aminododecanoic acid를, 그리고 MMT의 층간거리를 넓혀주기 위하여 세칠트리메칠암모늄 브로마이드(CTMA)를 각각 삽입시켰다. 이렇게 개질된 MMT를 THF 용액상태에서 poly(${varepsilon}-caprolactone$) diol ($M_n{=2000}$)와 $80^{\circ}C$에서 4시간 동안 반응하였다. 반응 후, poly(${varepsilon}-caprolactone$) ($A_n{=80000}$)을 이 용액에 삽입하여 같은 온도에서 12시간 동안 혼합하였다. 이 용액을 실리콘 몰드에 부어 6$0^{\circ}C$ 진공 오븐에서 6시간 동안 건조하여 poly(${varepsilon}-caprolactone$) (PCL)/clay 나노복합재료 필름을 제조하였다. XRD와 TEM으로 확인한 결과 실리케이트 층이 완전히 박리된 박리형 나노복합재료임을 확인하였다. 그리고 MMT의 양에 따른 PCL/clay 나노복합재료의 기계적 성질과 열적 성질을 tensile tester와 DSC로 확인하였다. MMT가 PCL 매트릭스에 균일하게 분산되어 있어 복합재료의 영율이 향상되었으나, 인장강도에는 영향이 거의 없었다. 그리고 MMT의 양이 PCL에 대하여 3wt%까지 증가함에 따라 PCL의 결정화 온도가 증가하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.376.1-376.1
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• 2014

그래핀은 차세대 2차원 물질로서 지금까지 활발히 연구되어 왔으나 밴드갭이 없기 때문에 전자소자로서의 응용이 매우 제한적이다. 최근에 그래핀을 대체할 수 있는 물질로서 Transition Metal Dichalcogenides (TMDs)가 주목을 받고 있다. 특히, TMDs 중에서 $MoS_2$는 bulk일 때 indirect한 1.2 eV인 밴드 갭을 갖고 있으나, layer가 줄어들면서 direct한 1.8 eV인 밴드갭을 가진다. 국내외 여러 연구 그룹에서 $MoS_2$를 이용하여 제작한 Field Effect Transistor (FET)는 high-$\small{K}$ gate가 산입되지 않은 경우에 on-off ratio와 mobility가 각각 $10^6$와 약 $3cm^2/Vs$로 나타나고 있다. 이와 같이 아주 우수한 전기적, 광학적 특성을 갖는 소자 응용성을 가지고 있다. 최근까지의 연구결과들은 대부분 mechanical exfoliation method (MEM) 로 제작된 $MoS_2$ monolayer를 이용하였으나, 이 방법은 large scale 및 layer controllable에는 적합하지 않다. 본 연구에서는 대면적의 집적회로 응용에 적합한 chemical vapor deposition법을 이용하여 $MoS_2$를 성장하였다. 높은 결정성을 위해 sulphur (powder purity 99.99%)와 molybdenum trioxide(powder purity 99.9%)를 이용하고, Ar 가스 분위기에서 sulphur powder 및 molybdenum trioxide powder를 각각 $130^{\circ}C$ 및 $1000^{\circ}C$로 유지하며 $MoS_2$ 박막을 성장하였다. 성장된 $MoS_2$ 박막은 Atomic force Microscopy (AFM)을 통해 박막의 단차와 roughness을 확인하였다. 또한, X-ray Diffraction (XRD) pattern 분석으로 박막의 결정성을 확인하였으며, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Photoluminescence (PL) 측정으로 광학적 특성을 분석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.356.1-356.1
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• 2014

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reduction-sulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of mono-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.110-113
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• 2017

The two-dimensional layered $MoS_2$ has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. $MoS_2$ is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-$MoS_2$ and $MoS_2-MoS_2$ heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, $MoS_2$ can easily be exfoliated physically or chemically. During the $MoS_2$ field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-$MoS_2$ gap, and leads to the problem of a rapid decline in the material's yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic $MoS_2$ field effect transistor (FET) was fabricated on a hydrophilic $SiO_2$ substrate via chemical vapor deposition CVD. To solve the problem of $MoS_2$ exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a $MoS_2$ film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.287.1-287.1
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• 2013

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reductionsulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of single-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.