• 대한기계학회논문집B
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• 제28권5호
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• pp.501-509
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• 2004

Unipolar diffusion charging of non-spherical particles was investigated for various particle shapes. We researched with TiO$_2$agglomerates produced by the thermal decomposition of titanium tetraisopropoxide (TTIP) vapor. TTIP was converted into TiO$_2$, in the furnace reactor and was subsequently introduced into the sintering furnace. Increasing the temperature in the sintering furnace, aggregates were restructured into higher fractal dimensions. The aggregates were classified according to their mobility using a differential mobility analyzer. The projection area and the mass fractal dimension of particles were measured with an image processing technique performed by using transmission electron microscope (TEM) photograph. The selected aggregates were charged by the indirect photoelectric-charger and the average number of charges per particle was measured by an aerosol electrometer and a condensation particle counter. For the particles of same mobility diameter, our results showed that the particle charge quantity decreases as the sintering temperature increases. This result is understandable because particles with lower fractal dimension have larger capacitance and geometric surface area.

• 전기학회논문지
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• 제57권7호
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• pp.1229-1234
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• 2008

In this work, ultra high-voltage (17 - 50 kV AC), reliable 80 pF mica capacitors for partial discharge system application were investigated. Mica was used as the dielectric of the capacitors. Using the conservative design rule, over 3 individual $50\;{\mu}m$ thick mica sheets with a size of 30mm{\times}35mm were used with lead foils to form a parallel capacitor element and 20 mica sheets were interleaved with lead foils to form a series stack of parallel capacitor element to meet the requirements of the capacitors. The dimensions of the fabricated 80 pF capacitors for 17 kV AC and 50 kV AC were $90\;mm{\times}90\;mm$ and $95\;mm{\times}180\;mm$, respectively. The high-frequency characteristics of the capacitance (C) and dissipation factor (D) of the developed capacitors were measured using a capacitance meter. The developed capacitors exhibited C of 79.5 - 87.5 pF, had D of 0.001% over the frequency ranges of 150 kHz to 50 MHz, had a self-resonant frequency of 65 MHz, and showed results comparable to those measured for the capacitors prepared recently by $Adwel^{Tm}$. The developed capacitors also showed excellent characteristics for thermal shock test and temperature cycling test.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.187-190
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• 1987

This paper is for the charge storage effect and C-V characteristics of MIS type diode which is the basic structural unit of charge-coupled device after growing the $Pb_{1-x}Sn_xTe$ crystal. $Pb_{1-x}Sn_xTe$ singlecrystal dbtained from the horizental furnace using Bridgman method. To judge whether the grown singlecrystal is suitable for specimen or not, it was investigated by X-ray diffraction analysis, thermogravimetry and differential thermal analysis. The C-V characteristics of the specimen caused to anodic oxidation was the best when the insulator film's depth was 250[$\AA$]. Measuring the C-V characteristics aftermanufacturing MIS type diode resulted that the whole capacitance was the largest when the supply voltage was low, 0.3[V] and the capacitance also varied according to the variance frequence when the supply voltage is over 0.5[V]. From the above result, even if the supply voltage is low, the $Pb_{1-x}Sn_xTe$ also have a good charge storage effect.

• 공업화학
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• 제30권3호
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• pp.324-330
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• 2019

Petal-like nickel cobaltite ($NiCo_2O_4$)/reduced graphene oxide (rGO) composites with different $rGO-to-NiCo_2O_4$ weight ratios were synthesized using a simple hydrothermal method and subsequent thermal treatment. In the $NiCo_2O_4/rGO$ composite, the $NiCo_2O_4$ 3-dimensional nanomaterials contributed to the improvement of electrochemical properties of the final composite material by preventing the restacking of the rGO sheet and securing ion movement passages. The composite structure was examined by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and Fourier-transform infrared (FT-IR) spectroscopy. The FE-SEM and TEM images showed that petal-like $NiCo_2O_4$ was supported on the rGO surface. Cyclic voltammetry (CV), galvanostatic charge-discharge (GCD), and electrochemical impedance spectroscopy (EIS) were used for the electrochemical analysis of composites. Among the prepared composites, $0.075g\;rGO/NiCo_2O_4$ composite showed the highest specific capacitance of $1,755Fg^{-1}$ at a current density of $2Ag^{-1}$. The cycle performance and rate capability of the composite material were higher than those of using the single $NiCo_2O_4$ material. These nano-structured composites could be regarded as valuable electrode materials for supercapacitors that require superior performance.

• 대한전기학회논문지
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• 제43권3호
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• pp.381-387
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• 1994

In this paper, we found the improved SPICE heat transfer modeling of impulsed magnetizing fixture system and investigated temperature characteristics using the proposed model. As the detailed thermal characteristics of magnetizing fixture can be obtained, the efficient design of the impulsed magnetizing fixture which produce desired magnet will be possible using our heat transfer modeling. The knowledge of the temperature of the magnetizing fixture is very important of forecast the characteristics of the magnetizing fixture which produce desired magnet will be possible using our heat transfer modeling. The knowledge of the temperature of the magnetizing fixture is very important to forecast the characteristics of the magnetizing circuits under different conditions. The capacitor voltage was not raised above 810[V] to protect the magnetizing fixture from excessive heating. The purpose of this work is to compute the temperature increasing for different magnetizing conditions. The method uses multi-lumped model with equivalent thermal resistance and thermal capacitance. The reliable results are obtained by using iron core fixture (stator magnet of air cleaner DC motor) coupled to a low-voltage magnetizer(charging voltage : 1000[V], capacitor : 3825[$\mu$F]. The modeling and experimental results are in close aggrement.

• 한국표면공학회지
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• 제52권3호
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• pp.123-129
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• 2019

With recent demand for the renewable energy resources, we conducted a research on the energy conversion and storage device of supercapacitor. The hybrid graphene-zinc oxide(GZO) electrodes for the supercapacitors (SCs) were fabricated and investigated. To increase the electrical conductivity of the GZO electrode, the rapid thermal annealing(RTA) in $Ar/H_2$(10%) atmosphere was applied and the effect was examined by comparing it with RTA at Ar atmosphere. In Raman spectroscopy, the electrodes annealed at 400? in $Ar/H_2$ atmosphere showed a lower ratio of D/G peak than that of annealed at Ar atmosphere, and had a larger specific capacitance(Sc) in the cyclic voltammetry(CV), and a lower the equivalent series resistance(ESR) in the electrochemical impedance spectroscopy(EIS). The reason seems to come from the better mixing of the graphene and zinc oxide by the RTA in $Ar/H_2$(10%).

• 전기학회논문지
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• 제66권5호
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• pp.800-805
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• 2017

The accelerated thermal ageing of CSPE (chlorosulfonated polyethylene) was carried out for 16.82, 50.45, and 84.09 days at $110^{\circ}C$, equivalent to 20, 60, and 100 years of ageing at $50^{\circ}C$ in nuclear power plants, respectively. As the accelerated thermally aged years increase, the insulation resistance and resistivity of the CSPE decrease, and the capacitance, relative permittivity and dissipation factor of those increase at the measured frequency, respectively. As the accelerated thermally aged years and the measured frequency increase, the phase degree of response voltage vs excitation voltage of the CSPE increase but the phase degree of response current vs excitation voltage decrease, respectively. As the accelerated thermally aged years increase, the apparent density, glass transition temperature and the melting temperature of the CSPE increase but the percent elongation and % crystallinity decrease, respectively. The differential temperatures of those are $0.013-0.037^{\circ}C$ and, $0.034-0.061^{\circ}C$ after the AC and DC voltages are applied to CSPE-0y and CSPE-20y, respectively; the differential temperatures of those are $0.011-0.038^{\circ}C$ and $0.002-0.028^{\circ}C$ after the AC and DC voltages are applied to CSPE-60y and CSPE-100y, respectively. The variations in temperature for the AC voltage are higher than those for the DC voltage when an AC voltage is applied to CSPE. It is found that the dielectric loss owing to the dissipation factor($tan{\delta}$) is related to the electric dipole conduction current. It is ascertained that the ionic (electron or hole) leakage current is increased by the partial separation of the branch chain of CSPE polymer as a result of thermal stress due to accelerated thermal ageing.

• 한국재료학회지
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• 제27권6호
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• pp.295-300
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• 2017

Aluminum-oxide($Al_2O_3$) thin films were deposited by electron cyclotron resonance plasma-enhanced atomic layer deposition at room temperature using trimethylaluminum(TMA) as the Al source and $O_2$ plasma as the oxidant. In order to compare our results with those obtained using the conventional thermal ALD method, $Al_2O_3$ films were also deposited with TMA and $H_2O$ as reactants at $280^{\circ}C$. The chemical composition and microstructure of the as-deposited $Al_2O_3$ films were characterized by X-ray diffraction(XRD), X-ray photo-electric spectroscopy(XPS), atomic force microscopy(AFM) and transmission electron microscopy(TEM). Optical properties of the $Al_2O_3$ films were characterized using UV-vis and ellipsometry measurements. Electrical properties were characterized by capacitance-frequency and current-voltage measurements. Using the ECR method, a growth rate of 0.18 nm/cycle was achieved, which is much higher than the growth rate of 0.14 nm/cycle obtained using thermal ALD. Excellent dielectric and insulating properties were demonstrated for both $Al_2O_3$ films.

• 열처리공학회지
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• 제14권3호
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• pp.151-154
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• 2001

$TiO_2$ thin film has wide application because of its high capacitanca, reflection, and good transmissivity in visible range. $TiO_2$ thin film can be made by thermal deposition method, reactive evaporation method, activated reactive evaporation(ARE) method. In the case of thermal deposition, the oxygen deficiency can occur because the melting point of Ti is very high. While in the case of reactive evaporation, high density $TiO_2$ can not be made, because reactive gas($O_2$) and evaporated material(Ti) are not fully combined, activated reactive evaporation, $TiO_2$ is easily deposited at lower gas pressure compared with reactive evaporation because the ionized reactive gas is made by plasma. Therefore, activated reactive evaporation is very useful to deposit the material having the high melting point. In this work, we formed $TiO_2$ thin film by activated reactive evaporation method. The surface of $TiO_2$ thin film was analyzed by X-ray photoelectron spectroscopy. The surface morphology which was analyzed by atomic force microscopy(AFM) shows that feature of the film surface is uniform. The dielectric capacitance, withstanding voltage were $600{\mu}F/cm^2$, 0.4V respectively. In further work, we can increase the withstanding voltage by improving the deposition parameter of substrates.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권12호
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• pp.768-772
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• 1999

A new TFT-LCD panel with air-bridge type gate to data line inter-crossing has been proposed and its characteristics have been measured. The proposed structure has air-gap between gate and data line inter-crossing. This air-bridge TFT-LCD panel has very small capacitance between gate and data line. The new panes structure achieves 9 times fast signal propagation compared with conventional panel, which enables to have enough design margin for 20-inch diagonal and larger size UXGA panel. We have examined thermal and mechanical durability of new panel to verify applicability for commercial AMLCD production. After TEOS and polyimide passivation, this panel withstood a thermal stress at $250^{\circ}C$ and a mechanical stress during the rubbing process.