• Fibers and Polymers
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• 제3권1호
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• pp.38-42
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• 2002

Polypropylene filaments were spun from a mixture of PP chips of two different Melt Flow Index (MFI) (3 MFI and 35 MFI). A significant difference was observed in the melting characteristics of the resultant filaments from either of the individual components as observed from the DSC. The main difference being in the degree of melting achieved at any temperature in the initial stages of the melting range, which was found to be higher in case of the filaments spun from the b]end. These filaments were then thermally bonded using silicon oil bath and heated roller method. Subsequently the bond strength of the filaments was measured on the Instron Tensile Tester using the loop technique. The values of the world strengths obtained from the blend were compared with those made from the individual component. It was found that the bond strength of the bonds obtained from the blended filament at a given temperature was higher than that of the bonds made from the filaments of either of the individual components, which is also suggested by the DSC curves. The difference in the bond strength was found to be as high as 25% in case of the blend with 60:40 composition ratios of the 3 MFI and 35 MFI components respectively.

• 대한기계학회논문집A
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• 제28권9호
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• pp.1408-1414
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• 2004

The use of flip-chip technology has many advantages over other approaches for high-density electronic packaging. ACF (anisotropic conductive film) is one of the major flip-chip technologies, which has short chip-to-chip interconnection length, high productivity, and miniaturization of package. In this study, thermal fatigue lift of ACF bonding flip-chip package has been predicted. Elastic and thermal properties of ACF were measured by using DMA and TMA. Temperature dependent nonlinear hi-thermal analysis was conducted and the result was compared with Moire interferometer experiment. Calculated displacement field was well matched with experimental result. Thermal fatigue analysis was also conducted. The maximum shear strain occurs at the outmost located bump. Shear stress-strain curve was obtained to calculate fatigue life. Fatigue model for electronic adhesives was used to predict thermal fatigue life of ACF bonding flip-chip packaging. DOE (Design of Experiment) technique was used to find important design factors. The results show that PCB CTE (Coefficient of Thermal Expansion) and elastic modulus of ACF material are important material parameters. And as important design parameters, chip width, bump pitch and bump width were chose. 2$^{nd}$ DOE was conducted to obtain RSM equation far the choose 3 design parameter. The coefficient of determination ($R^2$) for the calculated RSM equation is 0.99934. Optimum design is conducted using the RSM equation. MMFD (Modified Method for feasible Direction) algorithm is used to optimum design. The optimum value for chip width, bump pitch and bump width were 7.87mm, 430$\mu$m, and 78$\mu$m, respectively. Approximately, 1400 cycles have been expected under optimum conditions. Reliability analysis was conducted to find out guideline for control range of design parameter. Sigma value was calculated with changing standard deviation of design variable. To acquire 6 sigma level thermal fatigue reliability, the Std. Deviation of design parameter should be controlled within 3% of average value.

• 한국표면공학회지
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• 제33권2호
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• pp.101-106
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• 2000

SOI (Silicon-On-Insulator) substrates were fabricated with varying annealing temperature of $25-660^{\circ}C$ by a linear annealing method, which was modified RTA process using a linear shape heat source. The annealing method was applied to Si ∥ $SiO_2$/Si pair pre-contacted at room temperature after wet cleaning process. The bonding strength of SOI substrates was measured by two methods of Razor-blade crack opening and direct tensile test. The fractured surfaces after direct tensile test were also investigated by the optical microscope as well as $\alpha$-STEP gauge. The interface bonding energy was 1140mJ/m$^2$ at the annealing temperature of $430^{\circ}C$. The fracture strength was about 21MPa at the temperature of $430^{\circ}C$. These mechanical properties were not reported with the conventional furnace annealing or rapid thermal annealing method at the temperature below $500^{\circ}C$. Our results imply that the bonded wafer pair could endure CMP (Chemo-Mechanical Polishing) or Lapping process without debonding, fracture or dopant redistribution.

• 한국주조공학회지
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• 제19권5호
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• pp.410-418
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• 1999

To overcome the undesirable deformation, peeling off and geometrical restrictions which were mainly caused by differences in thermal expansion coefficients during the cladding of aluminum strip and stainless strip, new processing method based on vacuum die casting is designed and implemented in fabricating Fe-17wt%Cr steel (stainless steel). To increase cast-bonding ability, the surface of Fe-17wt%Cr steel is electrochemical etched to have optimum pit size (above 0.2 mm) and pit density (above 30%). The implementation of vacuum die casting by using surface treated stainless steel (Fe-17wt%Cr Steel) produces good trial products having acceptable cast-bonding ability. The enabling conditions for cast-bonding are pouring temperature $690^{\circ}C$, filling speed 30 m/sec and casting pressure $800\;kg/cm^2$. The microscopic observation of cast-bonded Al/Fe-17wt%Cr steel does not show any evidence of intermetallic compounds. The bonding strength of trial products is $150-400\;kg/cm^2$ and this is stronger than conventionally cladded metal having $30-70\;kg/cm^2$.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2015년도 춘계 학술논문 발표대회
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• pp.144-145
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• 2015

In this study, it is contemporaneously understood that tile attachment on CRC board do not have a regulated standard on quality control and construction. Furthermore, there is also a definite lack of standardization on nondestructive inspection of tiles. This thesis investigates a diagnosis method of spot bonding tile attachment using infrared thermal camera as a way to propose a systematic nondestructive inspection method after tile construction.

• 한국기계가공학회지
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• 제19권5호
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• pp.67-74
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• 2020

To predict the thermal deformation of an oven cabinet during the enamel process, we propose a simple finite element analysis method comprising two steps: heating and cooling. To this end, the basic mechanical and thermal properties such as thermal expansion of the enamel and steel plate were experimentally studied, and the mechanical properties of four different stainless steel (SUS) plates were evaluated to select the target material for the oven at high temperature conditions from 400 ℃ to 700 ℃. In the first analysis step of the enamel process, the SUS plate was heated to 850 ℃ and was then thermally expanded without considering the enamel coating. Next, assuming the perfect bonding of two materials (enamel coating and metal plate), the enamel plate was allowed to cool to room temperature till 22 ℃. From the results of comparing the experimental and analytical data, we can make a conclusion that the proposed method can be applied to evaluate the thermal deformation of enamel products. Especially, the thermal deformation of the oven can be predicted with different enamel coating conditions, such as uniform and nonuniform coating thickness.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.815-819
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• 1998

The silicon-nirtide membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PRO($PbTiO_3$ ) layer for a IR detection was coated on the membrane and its characteristics were measured. The a attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer were eliminated through the method of bonding/etching of silicon wafer. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by the PTO layer were measured, too.

• 한국주조공학회지
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• 제25권3호
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• pp.134-141
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• 2005

To overcome the undesirable deformation, peeling off and geometrical restrictions which were mainly caused by differences in thermal expansion coefficients during the cladding of aluminum strip and stainless strip, new processing method based on vacuum die casting is designed and implemented in fabricating Al/Fe-17wt%Cr steel(stainless steel). To increase cast-bonding ability, the surface of Fe-17wt%Cr steel is electrochemically etched to have optimum pit size and density. The optimum conditions to generate best pit are as follows: Solution: 1 M $Fecl_{3}$+1 M Nacl, Addition: $CuCl_{2}+HCl$, Current density: 80 $mA/cm^{2}$, Total current: 400 $coulomb/cm^{2}$, AC frequency :60 Hz.

• Macromolecular Research
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• 제12권5호
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• pp.466-473
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• 2004

We have used FT-IR spectra to explain the effects of hydrogen bonding between chitosan and polycaprolactam (PA6). A dynamic mechanical analysis study suggested that the optimum chitosan and PA6 miscibility under the conditions of this experiment were obtained at a blending ratio of 40:60. We studied the thermal degradation of chitosan blended with PA6 (chitosan/PA6) by thermogravimetric analysis and kinetic analysis (by the Ozawa method). Dry chitosan and PA6 exhibited a single stage of thermal degradation and chitosan/PA6 blends having> 20 wt% PA6 exhibited at least two stages of degradation. In chitosan/PA6 blends, chitosan underwent the first stage of thermal degradation; the second stage proceeded at a temperature lower than that of PA6, because the decomposition product of chitosan accelerated the degradation of PA6. The activation energies of the blends were between 130 and 165 kJ/mol, which are also lower than that of PA6.

• 동력기계공학회지
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• 제5권4호
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• pp.11-17
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• 2001

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor, the size of the pressure sensor diaphragm have become smaller year by year, and a microaccelerometer with a size less than $200{\sim}300{\mu}m$ has been realized, In this paper, we study some of the bonding processes of SCS(single crystal silicon) insulator wafer for the microaccelerometer. and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in micro structural engineering discipline for design of SCS insulator wafers. Successful temperature distribution analysis and design of the SCS insulator wafers based on the tunneling current concept using microaccelerometer depend on the knowledge about normal mechanical properties of the SCS and $SiO_2$ layer and their control through manufacturing processes.