• 센서학회지
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• 제20권5호
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• pp.329-335
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• 2011

We demonstrated that high-stability thermistors can be calibrated with an uncertainty less than 1 mK, if the error due to the heat conduction is minimized. We first investigated the effect of the self-heating of typical thermistor probes to see how accurate we need to determine the effect of self-heating. We, then, calibrated thermistors and fitted the results using various modeling equations. We found out that the heat conduction is an important factor in achieving the calibration uncertainty under 1 mK for thermistors when the diameter of the probe is as thick as 10 mm. Therefore, we controlled the room temperature within $0.5^{\circ}C$ to minimize the heat conduction error during the calibration. The calibration with an uncertainty below 1 mK was possible when the stabilization time for each calibration was long enough to obtain a good thermal equilibrium.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1463-1464
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• 2011

An indium thin oxide(ITO) is used as a substrate material for organic light-emitting diodes(OLEDs) and organic photovoltaic cells. This study examined the effects of an $O_2$ plasma treatment on the electrical properties of an organic photovoltaic cell. The four probe method and Atomic force microscope(AFM) revealed the lowest surface resistance at the plasma treatment intensity of 250 [W] and the lowest average surface roughness of 2.0 [nm] at 250 [W]. The lowest average resistance of 17 [${\Omega}$/sq] was also observed at 250 [W] 40 [sec]. The $O_2$ plasma treatment device and a basic device in a structure of CuPc/C60/BCP/Al on ITO glass were fabricated by thermal evaporation, respectively. When the $O_2$ plasma treatment was used to the ITO, The experimental results revealed that the power conversion efficiency(PCE) indicated 65 [%] higher in the PCE than that without the plasma treatment.

• 전자공학회논문지D
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• 제34D권1호
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• pp.23-29
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• 1997

Effects of Co thickness on the formation of epitaxial $CoSi_2$ from the Co/Ti bilayer have been investigated. Ti and Co were sequentially deposited with the Ti thickness fixed at 5 or 10nm, while the Co thickness was varied from 5 to 30nm. The metal-deposited samples were then rapidly thermal-annealed in $N_2$ at $900^{\circ}C$ for 20 sec. Material properties of $CoSi_2$ thin films were analyzed by the 4-point probe, XRD, AES, andXTEM. When the as-deposited Co thickness was below 15nm, the $CoSi_2$ with high resistivity and rough interface was formed. On the other hand, when the Co thickness was above 15 nm, the epitaxial $CoSi_2$ with the resistivity of about 16 ~ 19 $\mu\Omega.cm$, uniform composition and thickness and flat interface was formed. Initial Ti thickness has sizable effect on the formation of $CoSi_2$, when the Co layer was very thin (~ 5 nm). But there was no significant effect of the Ti thickness for the initial Co thickness of above 15 nm.

• Advances in nano research
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• 제9권2호
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• pp.123-131
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• 2020

Conventional fabrics that have modified in to conductive fabrics using conductive nanomaterials have novel applications in different fields. These of fabrics can be used as heat generators with the help of the Joule heating mechanism, which is applicable in thermal therapy and to maintain the warmth in cold weather conditions in a wearable manner. A modified fabric can also be used as a sensor for body temperature measurements using the variation of resistance with respect to the body temperature deviations. In this study, polyol synthesized silver nanowires (Ag NWs) are incorporated to commercially available cotton fabrics by using drop casting method to modify the fabric as a thermogenic temperature sensor. The variation of sheet resistance of the fabrics with respect to the incorporated mass of Ag NWs was measured by four probe technique while the bulk resistance variation with respect to the temperature was measured using a standard ohm meter. Heat generation profiles of the fabrics were investigated using thermo graphic camera. Electrically conductive fabrics, fabricated by incorporating 30 mg of Ag NWs in 25 ㎠ area of cotton fabric can be heated up to a maximum steady state temperature of 45℃, using a commercially available 9 V battery.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1010-1013
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• 2001

Zinc oxide(ZnO) films were prepared by ultrasonic spray pyrolysis on indium (In) films deposited by evaporation and subsequently submitted to rapid thermal annealing (RTA). The RTA was processed in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were characterized before and after the RTA by X-ray diffraction (XRD) and scanning electron microscopy(SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy(AES) was carried out to figure out the distribution of indium atoms in the ZnO films. The resistivity of the ZnO on In(ZnO/In) films decreased to 2${\times}$10$\^$-3/ $\Omega$cm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of the ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800$^{\circ}C$, which disappeared by the RTA at 1000$^{\circ}C$. The effects of temperature, time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.828-834
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• 2001

Zinc oxide (ZnO) films deposited on indium (In) films were post-annealed in a rapid thermal anealing (RTA) system. The ZnO/In films were RTA-treated in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were studied before and after the RTA by X-ray diffraction(XRD) and scanning electron microscopy (SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy (AES) was carried out to figure out the redistribution of indium atoms in the ZnO films. The resistivity of the ZnO/In films decreased to 2$\times$10$\^$-3/ Ωcm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800 $\^{C}$. The effects of temperature time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.

• Journal of Welding and Joining
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• 제33권3호
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• pp.47-53
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• 2015

By the trends of electronic package to be more integrative, the fine Cu trace pitch of organic PCB is required to be a robust design. In this study, the short circuit failure mechanism of PCB with a Cl element under the Temperature humidity bias test ($85^{\circ}C$/85%RH/3.5V) was examined by micro-structural study. A focused ion beam (FIB) and an electron probe micro analysis (EPMA) were used to polish the cross sections to reveal details of the microstructure of the failure mode. It is found that $CuCl_x$ were formed and grown on Cu trace during the $170^{\circ}C$/3hrs and that $CuCl_x$ was decomposed into Cu dendrite and $Cl_2$ gas during the $85^{\circ}C$/85%RH/3.5V. It is suggested that Cu dendrites formed on Cu trace lead to a short circuit failure between a pair of Cu traces.

• Carbon letters
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• 제12권4호
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• pp.223-228
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• 2011

In this present work, the effect of additional heat-treatment (AHT) in the range from $1800^{\circ}C$ to $2400^{\circ}C$ on the chemical composition, morphology, microstructure, tensile properties, electrical resistivity, and thermal stability of commercial polyacrylonitrile (PAN)-based carbon fibers was explored by means of elemental analysis, electron microscopy, X-ray diffraction analysis, single fiber tensile testing, two-probe electrical resistivity testing, and thermogravimetric analysis (TGA). The characterization results were in agreement with each other. The results clearly demonstrated that AHTs up to $2400^{\circ}C$ played a significant role in further contributing not only to the enhancement of carbon content, fiber morphology, and tensile modulus, but also to the reduction of fiber diameter, inter-graphene layer distance, and electrical resistivity of "as-received" carbon fibers without AHT. The present study suggests that key properties of commercial PAN-based carbon fibers of an intermediate grade can be further improved by proprietarily adding heat-treatment without applying tension in a batch process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.247-247
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• 2008

In this work, VOx thin films have been deposited by DC magnetron sputtering method on glass substrate using argon and oxygen gases. We examined the effects of the post annealing temperature on the structural, optical, and electrical variations of VOx films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using RTA equipment in air ambient. The thickness of the film and interface between film and substrate were observed by field emission scanning electron microscopy (FESEM). To analysis the structural properties of VOx with various annealng temperatures, we used XRD method. Also, we investigated the electrical and optical properties of VOx thin films using hall measurement, 4-point probe, and UV-visible methods.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.419-420
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• 2008

In this work, we report several experimental data capable of evaluating the phase transition characteristics of (InTe)x(GeTe)y (x = 0.1, 0.3, y =1) pseudo-binary thin films. (InTe)x(GeTe)y phase change thin films have been prepared by thermal evaporator. The crystallization characteristics of amorphous (InTe)x(GeTe)y thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration : 10~460 ns) and XRD measurement. It was found that the crystalline speed of In-Ge-Te thin films are faster than $Ge_2Sb_2Te_5$[1] and also the crystalline temperature is higher. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheeresistance of InGeTe films annealed at different temperature.