• Title/Summary/Keyword: Thermal Plasmas

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Effects of Post Annealing and Oxidation Processes on the Shallow Trench Etch Process (Shallow Trench 식각공정시 발생하는 결함의 후속열처리 및 산화곤정에 따른 거동에 관한 연구)

  • 이영준;황원순;김현수;이주옥;이정용;염근영
    • Journal of the Korean institute of surface engineering
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    • v.31 no.5
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    • pp.237-244
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    • 1998
  • In this stydy, submicron shallow trenches applied to STI(shallow tench isolation) were etched using inductively coupled $CI_2$/HBr and $CI_2/N_2$plasmas and the physical and electrical defects remaining on the etched silicon trench surfaces and the effects of various annealing and oxidation on the removal of the defects were studied. Using high resolution electron microscopy(HRTEM), Physical defects were investigated on the silicon trench surfaces etched in both 90%$CI_2$/ 10%$N_2$ and 50%$CI_2$/50%HBr. Among the areas in the tench such as trench bottom, bottom edge, and sidewall, the most dense defects were found near the trench bottom edge, and the least dense defects were found near the trench bottom edge, and least dense defects compared to that etched with ment as well as hydrogen permeation. Thermal oxidation of 200$\AA$ atthe temperature up to $1100^{\circ}C$apprars not to remove the defects formed on the etched silicon trenches for both of the etch conditions. To remove the physicall defects, an annealing treatment at the temperature high than $1000^{\circ}C$ in N for30minutes was required. Electrical defects measured using a capacitance-voltage technique showed the reduction of the defects with increasing annealing temperature, and the trends were similar to the results on the physical defects obtained using transmission electron microscopy.

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ACCELERATION OF COSMIC RAYS AT LARGE SCALE COSMIC SHOCKS IN THE UNIVERSE

  • KANG HYESUNG;JONES T. W.
    • Journal of The Korean Astronomical Society
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    • v.35 no.4
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    • pp.159-174
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    • 2002
  • Cosmological hydrodynamic simulations of large scale structure in the universe have shown that accretion shocks and merger shocks form due to flow motions associated with the gravitational collapse of nonlinear structures. Estimated speed and curvature radius of these shocks could be as large as a few 1000 km/s and several Mpc, respectively. According to the diffusive shock acceleration theory, populations of cosmic-ray particles can be injected and accelerated to very high energy by astrophysical shocks in tenuous plasmas. In order to explore the cosmic ray acceleration at the cosmic shocks, we have performed nonlinear numerical simulations of cosmic ray (CR) modified shocks with the newly developed CRASH (Cosmic Ray Amr SHock) numerical code. We adopted the Bohm diffusion model for CRs, based on the hypothesis that strong Alfven waves are self-generated by streaming CRs. The shock formation simulation includes a plasma-physics-based 'injection' model that transfers a small proportion of the thermal proton flux through the shock into low energy CRs for acceleration there. We found that, for strong accretion shocks, CRs can absorb most of shock kinetic energy and the accretion shock speed is reduced up to $20\%$, compared to pure gas dynamic shocks. For merger shocks with small Mach numbers, however, the energy transfer to CRs is only about $10-20\%$ with an associated CR particle fraction of $10^{-3}$. Nonlinear feedback due to the CR pressure is insignificant in the latter shocks. Although detailed results depend on models for the particle diffusion and injection, these calculations show that cosmic shocks in large scale structure could provide acceleration sites of extragalactic cosmic rays of the highest energy.

The effects of non-thermal plasma and conventional treatments on the bond strength of fiber posts to resin cement

  • do Prado, Maira;da Silva, Eduardo Moreira;Marques, Juliana das Neves;Gonzalez, Caroline Brum;Simao, Renata Antoun
    • Restorative Dentistry and Endodontics
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    • v.42 no.2
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    • pp.125-133
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    • 2017
  • Objectives: This study compared the effect of hexamethyldisiloxane (HMDSO) and ammonia ($NH_3$) plasmas on the bond strength of resin cement to fiber posts with conventional treatments. Materials and Methods: Sixty-five fiber posts were divided into 5 groups: Control (no surface treatment); $H_2O_2$ (24% hydrogen peroxide for 1 min); Blasting (blasting with aluminum oxide for 30 sec); $NH_3$ ($NH_3$ plasma treatment for 3 min); HMDSO (HMDSO plasma treatment for 15 min). After the treatments, the Ambar adhesive (FGM Dental Products) was applied to the post surface (n = 10). The fiber post was inserted into a silicon matrix that was filled with the conventional resin cement Allcem Core (FGM). Afterwards, the post/cement specimens were cut into discs and subjected to a push-out bond strength (POBS) test. Additionally, 3 posts in each group were evaluated using scanning electron microscopy. The POBS data were analyzed by one-way analysis of variance and the Tukey's honest significant difference post hoc test (${\alpha}=0.05$). Results: The Blasting and $NH_3$ groups showed the highest POBS values. The HMDSO group showed intermediate POBS values, whereas the Control and $H_2O_2$ groups showed the lowest POBS values. Conclusion: Blasting and $NH_3$ plasma treatments were associated with stronger bonding of the conventional resin cement Allcem to fiber posts, in a procedure in which the Ambar adhesive was used.

Effects of DBD-bio-plasma on the HSP70 of Fibroblasts: A New Approach on Change of Molecular Level by Heat Shock in the Cell (Fibroblasts 세포주의 HSP70에 대한 DBD-bio-plasma의 effects: Cell에서 Heat Shock에 의한 Molecular Level 변화로의 새로운 접근법)

  • Kim, Kyoung-Yeon;Yi, Junyeong;Nam, Min-Kyung;Choi, Eun Ha;Rhim, Hyangshuk
    • KSBB Journal
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    • v.30 no.1
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    • pp.21-26
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    • 2015
  • Plasma is an ionized gas mixture, consisting of neutral particles, positive ions, negative electrons, electronically excited atoms and molecules, radicals, UV photons, and various reactive species. Also, plasma has unique physical properties distinct from gases, liquids, and solids. Until now, non-thermal plasmas have been widely utilized in bio-medical applications (called bio-plasma) and have been developed for the plasma-related devices that are used in the medical field. Although numerous bio-plasma studies have been performed in biomedicine, there is no confirmation of the nonthermal effect induced by bio-plasma. Standardization of the biological application of plasma has not been evaluated at the molecular level in living cells. In this context, we investigated the biological effect of bio-plasma on living cells. Hence, we treated the fibroblasts with Dielectric Bauvier Discharge bio-plasma (DBD), and assessed the characteristic change at the molecular level, one of the typical cellular responses. Heat shock protein 70 (HSP70) regulates its own protein level in response to stimuli. HSP70 responds to heat shock by increasing its own expression at the molecular level in cells. Hence, we confirmed the level of HSP70 after treatment of mouse embryonic fibroblasts (MEFs) with DBD. Interestingly, DBD-plasma induced cell death, but there was no difference in the level of HSP70, which is induced by heat shock stimuli, in DBD-treated MEFs. Our data provide the basic information on the interaction between MEFs and DBD, and can help to design a molecular approach in this field.

Copper Filling to TSV (Through-Si-Via) and Simplification of Bumping Process (비아 홀(TSV)의 Cu 충전 및 범핑 공정 단순화)

  • Hong, Sung-Jun;Hong, Sung-Chul;Kim, Won-Joong;Jung, Jae-Pil
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.3
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    • pp.79-84
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    • 2010
  • Formation of TSV (Through-Si-Via) with an Au seed layer and Cu filling to the via, simplification of bumping process for three dimensional stacking of Si dice were investigated. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process using $SF_6$ and $C_4F_8$ plasmas alternately. The vias were 40 ${\mu}m$ in diameter, 80 ${\mu}m$ in depth, and were produced by etching for 1.92 ks. On the via side wall, a dielectric layer of $SiO_2$ was formed by thermal oxidation, and an adhesion layer of Ti, and a seed layer of Au were applied by sputtering. Electroplating with pulsed DC was applied to fill the via holes with Cu. The plating condition was at a forward pulse current density of 1000 mA/$dm^2$ for 5 s and a reverse pulse current density of 190 mA/$dm^2$ for 25 s. By using these parameters, sound Cu filling was obtained in the vias with a total plating time of 57.6 ks. Sn bumping was performed on the Cu plugs without lithography process. The bumps were produced on the Si die successfully by the simplified process without serious defect.