• Journal of Korea Foundry Society
• /
• v.18 no.3
• /
• pp.234-239
• /
• 1998

Unidirectional solidification of $Al-CuAl_2$ eutectic composites was studied under the condition of forced convection by vibration. It has been shown that thermal gradient for solid is different from that for liquid during solidification under force convection by vibration. With increase of vibration, mobility of liquid increases, but decreases with decreasing vibration. The rate of solidification is very high initially, and decreases suddenly. For further solidification, the rate of solidification decrceases slowly, and shows a L-type behavior. The mechanical vibration during solidification effects efficiently on nucleation, and induces a forced convection in liquid. By the forced convection, great thermal gradient of liquid interface between solid and liquid can be obtained. The amount of solute near the interface also decreases as solute distribution is improved by the forced convection.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.5
• /
• pp.454-458
• /
• 1999

Hydrodynamic Thermal Capilary Model developed previously has been modified to study the transport phenomena in the Czochralski process. Our analysis is focused on the heat transfer in the system, convection in the melt phase, and the meniscus and interface shape. Four major forces drive melt flow in the crucible, which include thermal buoyancy force in the melt, thermocapillary force along the curved meniscus, crucible rotation and crystal rotation. Individual flow mechanism due to each driving force has been examined to determine its interaction with the meniscus and interface shape. A nominal 4-inch-diameter silicon crystal growth process is chosen as a subject for analysis. Heater temperature profile for constant diameter crystal is also present as a function of crystal height or fraction solidified.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.16 no.1
• /
• pp.104-111
• /
• 1992

In this study, the heat transfer characteristics of the evaporative transpiration cooled system is analytically investigated considering the occurrence of the two-phase evaporation zone. Under the condition of the external heat input, analytical solutions of the three regions (i.e., vapor, liquid and two-phase evaporation zone) are respectively obtained using the matching conditions for the steady-state problem where properties are constant. As results, the length of the evaporation zone increases with increasing heat input and with decreasing mass flow rate. It also increases with increasing particle size, system porosity, thermal conductivity of material, inlet temperature and latent heat of coolant. The position of the lower interface of the evaporation zone have a lot of efforts on the evaporation zone length, the position of the upper interface penetrates deeper into the porous layer with lower thermal conductivity of porous material, higher system porosity and larger particle size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.2
• /
• pp.106-110
• /
• 1998

The $LiNbO_3$ thin films were prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. RTA(Rapid Thermal Annealing) treatment was performed for as-deposited films in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric $LiNbO_3$ film was increased from a typical value of $1{\sim}2{\times}10^8{\Omega}{\cdot}cm$ before the annealing to about $1{\times}10^{13}{\Omega}{\cdot}cm$ at 500 kV/cm and reduced the interface state density of the $LiNbO_3/Si$ (100) interface to about $1{\times}10^{11}/cm^2{\cdot}eV$. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization ($P_r$) and coercive field ($E_c$) values of about 1.2 ${\mu}C/cm^2$ and 120 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.21-24
• /
• 1997

Ferroeletric LiNbO$_3$ thin films hale been prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. As-deposited films were performed RTA(Rapid Thermal Annealing) treatment in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric LiNbO$_3$ film was increased from a typical vague of 1~2$\times$10$^{8}$ $\Omega$.cm before the annealing to about 1$\times$10$^{13}$ $\Omega$.cm at 500 kV/cm and reduce the interface state density of the LiNbO$_3$/Si(100) interface to about 1$\times$10$^{11}$ cm$^2$ . eV. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization (Pr) and coercive field (Ec) values of about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.326-329
• /
• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.37-40
• /
• 1999

For the first time, charge trapping nonvolatile semiconductor memories with the deoxidized oxynitride gate dielectric is proposed and demonstrated. Gate dielectric wit thickness of less than 1 nm have been grown by postnitridation of pregrown thermal silicon oxides in NO ambient and then reoxidation. The nitrogen distribution and chemical state due to NO anneal/reoxidation were investigated by M-SIMS, TOF-SIMS, AES depth profiles. When the NO anneal oxynitride film was reoxidized on the nitride film, the nitrogen at initial oxide interface not only moved toward initial oxide interface, but also diffused through the newly formed tunnel oxide by exchange for oxygen. The results of reoxidized oxynitride(ONO) film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/N-rich SiON interface/Si-rich SiON(nitrogen diffused tunnel oxide)/Si substrate. In addition, the SiON and the S1$_2$NO Phase is distributed mainly near the tunnel oxide, and SiN phase is distributed mainly at tunnel oxide/Si substrate interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.12
• /
• pp.1091-1098
• /
• 1998

Thermal stability of the electroless deposited Cu thin film was investigated. Cu/TaN/Si multilayer was fabricated by electroless-depositing Cu thin layer on TaN diffusion barrier layer which was deposited by MOCVD on the Si substrate, and was annealed in $H_2$ ambient to investigate the microstructure of Cu film with a post heat-treatment. Cu thin film with good adhesion was successfully deposited on the surface of the TaN film by electroless deposition with a proper activation treatment and solution control. Microstructural property of the electroless-deposited Cu layer was improved by a post-annealing in the reduced atmosphere of $H_2$ gas up to $600^{\circ}C$. Thermal stability of Cu/TaN/Si system was maintained up to $600^{\circ}C$ annealing temperature, but the intermediate compounds of Cu-Si were formed above $650^{\circ}C$ because Cu element passed through the TaN layer. On the other hand, thermal stability of the Cu/TaN/Si system in Ar ambient was maintained below $550^{\circ}C$ annealing temperature due to the minimal impurity of $O_2$ in Ar gas.

• Proceedings of the Korean Society For Composite Materials Conference
• /
• 2000.04a
• /
• pp.175-183
• /
• 2000

The internal residual stresses within the multilayered structure with shan interface induced by the difference in thermal expansion coefficient between the materials of adjacent layers often provide the source of failure such as delamination of interfaces and etc. Recent development of the multilayered structure with functionally graded interface would be the solution to prevent this kind of failure. However a systematic thermo-mechanical analysis is needed fur the customized structural design of multilayered structure. In this study, theoretical model for the thermo-mechanical analysis is developed for multilayered structures of the Al-$SiC_p$ functionally graded composite for electronic packaging. The evolution of curvature and internal stresses in response to temperature variations is presented for the different combinations of geometry. The resultant analytical solutions are used for the optimal design of the multilayered structures with functionally graded interface as well as with sharp interface.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2002.05a
• /
• pp.820-823
• /
• 2002

MEMS structures Generally have been fabricated using surface-machining, but the interface failure between silicon substrate and evaporated thin film frequently takes place due to difference of linear coefficient of thermal expansion. Therefore this paper studied the effect of the residual stress caused by variable external loads. This study did not analyzed accurate quantity of the residual stress but trend for the effect of residual stress. Several specimens were fabricated using other material(Al, Au and Cu) and thermal load was applied. The residual stress was measured by nano-indentation using AFM. The results showed the existence of the residual stress due to thermal load. The indentation area of the thermal loaded thin film reduced about 3.5% comparing with the virgin thin film caused by residual stress. The finite element analysis results are similar to indentation test.