• Journal of architectural history
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• v.20 no.1
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• pp.23-39
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• 2011

The Sungnyemun roofing tiles were twice disassembled for maintenance work, in 1963 and 1997, and modern tiles were applied in 1997. However, besides differing in visual appearance, the modern tiles had distinctly different physical properties. A study has been carried out on 22 different tiles, including original Sungnyemun tiles, modern tiles applied during maintenance, traditional tiles made by tile-makers, and others, to examine their physical properties, such as bending strength, frost resistance, absorption, whole-rock magnetic susceptibility, chromaticity, differential thermal analysis, and other characteristics. Since the method of making modern tiles involves compressing clay in a vacuum, modern tiles showed relatively greater bending strength and specific gravity, while Sungnyemun tiles and those made by tile-makers, in comparison, demonstrated less bending strength and specific gravity owing to their production method of 'treading,' in which clay is mixed by having someone tread upon it repeatedly. Over time, the absorption rate of the original tile used for Sungyemun gradually decreased from 21% to 14.7%; traditional tiles from tile-makers showed absorption rates of 17%, while the absorption rate of modern tiles was just 1%, which is significantly low. As for frost resistance, Sungnyemun tiles and traditional tiles from tile-makers showed cracking and exfoliation after being subjected to testing 4 or 5 times, while slight cracking was seen on the surface for modern tiles after 1ngy, or 3 times. In other words, no significant difference from influence by frost was found. According to the results of differential thermal analysis, the plastic temperature was shown to have been no less than 1, $on^{\circ}C$ for all types of tile, and cristobalite was measuredthrough XRD analysis from a Sungnyemun female tile applied during maintenance in 1963, which appeared to have been plasticized at between $1,200^{\circ}C{\sim}1,300^{\circ}C$. Based on these research results on the physical properties of tiles from the Sungnyemun roof, a fundamental production method for tiles to be applied in the restoration of Sungnyemun has been identified.

• Journal of The Geomorphological Association of Korea
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• v.25 no.4
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• pp.89-101
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• 2018

In Mt. Halla, an arctic-alpine plant Diapensia lapponica var. obovata largely clings to rock surfaces. We observed the rock-surface temperatures of a rocky ridge on the summit area of the mountain from late April 2009 to early May 2010 in order to examine the diurnal and annual temperature variations and the thermal amplitude. We also investigated temperature regimes such as the frequency of freeze-thaw cycles and the temperature change, which might endanger the habitat through frost weathering. For comparison of slope aspects, temperature monitoring was carried out on the north and south faces of the same rocky ridge. The south face experiences the high daily maximum rock-surface temperatures and the high thermal amplitudes during the unfreezing season of May to November 2009. The temperature regimes are considered to exert physiological stress to the arctic-alpine plant. In addition, the south face shows the high frequency of freeze-thaw cycles during the seasonal freezing period of December 2009 to April 2010. This indicates that the south face is susceptible the exfoliation and granular disintegration of rock surfaces, which results in habitat destruction. As a consequence, the south face is believed to be less favorable for the establishment and growth of the arctic-alpine plant than the north face on the summit area of Mt. Halla.

• Clean Technology
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• v.15 no.2
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• pp.102-108
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• 2009

In this study, poly(lactic acid) (PLA) was modified by reactive extrusion with a functional monomer GMA(glycidyl methacrylate), MMT(montmorillonite), and initiator to enhance the melt strength. Each modified PLA was prepared with different amounts of GMA and MMT and was characterized by measuring thennal- and melt-viscoelastic properties. The degree of dispersion of MMT was measured by X-ray diffraction(XRD) and transmission electron microscopy(TEM). The glass transition temperature($T_g$) of modified PLA-GMA-MMT nanocomposite decreased with increasing GMA content, but was a little affected by the amount of MMT. Surface analysis showed that the nanocomposite became more intercalated than exfoliated as the amount of MMT increases. The complex viscosity and storage modulus of the nano-composite were greatly increased by addition of MMT.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• Polymer(Korea)
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• v.29 no.3
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• pp.248-252
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• 2005

PP/MMT nanocomposites having a various compositions were prepared by melt blending with a twin screw extruder. In this study, maleic anhydride-grafted PP (MAH-g-PP) was used as a compatibilizer in order to assist the exfoliation or hen in the pp matrix. from the results or x-ray diffraction (XRD) and transmission electron microscope (TEM) measurements for the nanocomposites, we confirmed that MMT was exfoliated. PPM nanocomposites have shown good flame retardancy by synergistic effect between MMT and flame retardant. The mechanical and thermal properties of the nanocomposites showed significant enhancement compared with those of neat PP, The excellent flame retardancy of the PP/MMT nanocomposites, UL94 V-0 value, was successfully obtained with reduced amount of the flame retardant.

• Polymer(Korea)
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• v.25 no.3
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• pp.421-426
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• 2001

11-Aminododecanoic acid, to insert the functional group of -COOH reacted with the end group of poly($\varepsilon$-caprolactone) diol, and cetyltrimethylammonium bromide (CTMA), to increase the d-spacing of Montmorillonite (MMT), were intercalated into $Na^+;_-$MMT. The modified MMT was reacted with poly(${varepsilon}-caprolactone$) diol ($M_n{=2000$) in THF solution at $80^{\circ}C$ for 4 hrs. After reaction, poly(${varepsilon}-caprolactone$) ($M_n{=80000$) was mixed into the solution for 12 hrs. To prepare the PCL/clay nanocomposite film this solution was cast into the silicon mold at $60^{\circ}C$ in vacuum oven for 6 hrs. From the results of XRD and TEM, it was found that the exfoliated PCL/clay nanocomposite were prepared. The effects of the amount of MMT on the mechanical properties and thermal properties of PCL/clay nanocomposites have been investigated by tensile tester and DSC. Because the MMT was dispersed homogeneously in PCL matrix, the Young's modulus of the nanocomposite were found to be excellent. However, MMT dispersed in PCL matrix had almost no effect on the tensile strength of the composites. The crystallization temperature of PCL increased in proportion to 3 wt% MMT in the PCL matrix.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.376.1-376.1
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• 2014

그래핀은 차세대 2차원 물질로서 지금까지 활발히 연구되어 왔으나 밴드갭이 없기 때문에 전자소자로서의 응용이 매우 제한적이다. 최근에 그래핀을 대체할 수 있는 물질로서 Transition Metal Dichalcogenides (TMDs)가 주목을 받고 있다. 특히, TMDs 중에서 $MoS_2$는 bulk일 때 indirect한 1.2 eV인 밴드 갭을 갖고 있으나, layer가 줄어들면서 direct한 1.8 eV인 밴드갭을 가진다. 국내외 여러 연구 그룹에서 $MoS_2$를 이용하여 제작한 Field Effect Transistor (FET)는 high-$\small{K}$ gate가 산입되지 않은 경우에 on-off ratio와 mobility가 각각 $10^6$와 약 $3cm^2/Vs$로 나타나고 있다. 이와 같이 아주 우수한 전기적, 광학적 특성을 갖는 소자 응용성을 가지고 있다. 최근까지의 연구결과들은 대부분 mechanical exfoliation method (MEM) 로 제작된 $MoS_2$ monolayer를 이용하였으나, 이 방법은 large scale 및 layer controllable에는 적합하지 않다. 본 연구에서는 대면적의 집적회로 응용에 적합한 chemical vapor deposition법을 이용하여 $MoS_2$를 성장하였다. 높은 결정성을 위해 sulphur (powder purity 99.99%)와 molybdenum trioxide(powder purity 99.9%)를 이용하고, Ar 가스 분위기에서 sulphur powder 및 molybdenum trioxide powder를 각각 $130^{\circ}C$ 및 $1000^{\circ}C$로 유지하며 $MoS_2$ 박막을 성장하였다. 성장된 $MoS_2$ 박막은 Atomic force Microscopy (AFM)을 통해 박막의 단차와 roughness을 확인하였다. 또한, X-ray Diffraction (XRD) pattern 분석으로 박막의 결정성을 확인하였으며, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Photoluminescence (PL) 측정으로 광학적 특성을 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.356.1-356.1
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• 2014

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reduction-sulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of mono-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.110-113
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• 2017

The two-dimensional layered $MoS_2$ has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. $MoS_2$ is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-$MoS_2$ and $MoS_2-MoS_2$ heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, $MoS_2$ can easily be exfoliated physically or chemically. During the $MoS_2$ field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-$MoS_2$ gap, and leads to the problem of a rapid decline in the material's yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic $MoS_2$ field effect transistor (FET) was fabricated on a hydrophilic $SiO_2$ substrate via chemical vapor deposition CVD. To solve the problem of $MoS_2$ exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a $MoS_2$ film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.287.1-287.1
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• 2013

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reductionsulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of single-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.