• Carbon letters
• /
• 제16권3호
• /
• pp.203-210
• /
• 2015

This study fabricated low thermal conductive polyacrylonitrile (PAN)-based carbon fibers containing cellulose particles while maintaining their mechanical properties. The high thermal conductivity of carbon fibers limits their application as a high temperature insulator in various systems such as an insulator for propulsion parts in aerospace or missile systems. By controlling process parameters such as the heat treatment temperature of the cellulose particles and the amount of cellulose added, the thermal and mechanical properties of the PAN-based carbon fibers were investigated. The results show that it is possible to manufacture composite carbon fibers with low thermal conductivity. That is, thermal conductivities were reduced by the cellulose particles in the PAN based carbon fibers while at the same time, the tensile strength loss was minimized, and the tensile modulus increased.

• 한국원자력학회:학술대회논문집
• /
• 한국원자력학회 1997년도 추계학술발표회논문집(1)
• /
• pp.451-456
• /
• 1997

Temperature distribution measurements in the mockup apparatus of reactor vessel were performed to determine the effective thermal conductivity of porous media with different geometry and to obtain the experimental data for the heat transfer processes by natural convection occurring in the air duct. The temperature distributions at four separated sections with different arrangements of porous media have different slopes according to the geometrical configuration. From the measured temperature distribution, effective thermal conductivity have been derived using the least square fitting method. The test at air duct was performed to the high heat removal at 3.4kW/$m^2$ by the natural convection from the outer wall to the air. And also the temperature distributions in the air duct agree well with the 1/7th power-law turbulent temperature distribution. The obtained heat transfer data have been compared with the Shin's and Sieger's correlations.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
• /
• pp.122-122
• /
• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• 한국초전도ㆍ저온공학회논문지
• /
• 제24권4호
• /
• pp.78-83
• /
• 2022

REBCO coated conductors are widely used for HTS power application, high magnetic field magnet application, and etc. A thermal stability of the REBCO conductor is essential for the operation of HTS-based device, and thermal conductivities of the conductor are relevant parameters for modeling cryogenic heat transfer. REBCO conductors consist of a REBCO layer, copper layers for electrical stabilization and a hastelloy substrate. At cryogenic temperature, thermal conductivity of copper and silver strongly depend on the purity of the material and the intensity of the magnetic field. In this study, thermal conductivities of the laminated composite structure of REBCO conductor are evaluated by using the thermal network model and the multidimensional heat conduction analysis. As a result, the thermal network model is applicable to REBCO conductors configured in series or parallel alone and multidimensional heat conduction analysis is necessary for complex cases of series and parallel configuration.

• 한국복합재료학회:학술대회논문집
• /
• 한국복합재료학회 2000년도 춘계학술발표대회 논문집
• /
• pp.131-134
• /
• 2000

Increased temperature adversely affects the reliability of a device. So, package material should have high thermal diffusion, i.e., high thermal conductivity. And, there are several other physical properties of polymeric materials that are important to microelectronics packaging, some of which are a low dielectric constant, a low coefficient of thermal expansion (CTE), and a high flexural strength. In this study, to get practical maximum packing fraction of AIN (granular type) filled EMC, the properties such as the spiral flow, thermal conductivity, CTE, and water resistance of AIN-filled EMC (65-vol%) were evaluated according to the size of AIN and the filler-size distribution. Also, physical properties of AIN filled EMC above 65-vol% were evaluated according to increasing AIN content at the point of maximum packing fraction (highly loading condition). The high loading conditions of EMC were set $D_L/D_S$=12 and $X_S$=0.25 like as filler of sphere shape and the AIN filled EMC in this conditions can be obtained satisfactory fluidity up to 70-vol%. As a result, the AIN filled EMC (70-vol%) at high loading condition showed improved thermal conductivity (about 6 W/m-K), dielectric constant (2.0~3.0), CTE(less than 14 ppm/$^{\circ}C$) and water resistance. So, the AIN filled EMC (70-vol%) at high loading condition meets the requirement fur advanced microelectronic packaging materials.

• 한국전기전자재료학회논문지
• /
• 제28권11호
• /
• pp.721-726
• /
• 2015

In this study, the properties of C-V degradation for thermal conductivity silicone rubber sample which is attached by copper-copper, copper-aluminum, aluminum-aluminum on upper-side and under-side has been measured at temperature of $80^{\circ}C{\sim}140^{\circ}C$. The results of this study are as follows. In case the frequency is increased, it found that the electrostatic capacity increased with increasing temperature to $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$ regardless of kind of electrode. It found that the electrostatic capacity increased with becoming high temperature range of frequency regardless of kind of electrode. This result is considered to be caused by thermal absorption on the thermal conductivity silicone rubber sample. It found that the electrostatic capacity decreased with increasing temperature and frequency. This result is considered to be caused by molecular motion of C-F radical or OH radical.

• 유기물자원화
• /
• 제23권4호
• /
• pp.95-103
• /
• 2015

본 연구에서 목적은 열가수분해 반응기에 최적설계를 위해 반응온도에 따른 도계폐기물의 열전도도를 정량하는 것이다. 이에 반응온도에 따른 탈수슬러지의 열전도도를 연속적으로 정량한 결과, 반응온도가 증가할수록 열가수분해 반응에 의한 고온, 고압에 의해 슬러지가 열적으로 가용화된다. 따라서, 슬러지 세포내에 결합수가 자유수로 용출되어 고상의 탈수슬러지가 액상의 슬러리로 상태가 변화된다. 그 결과 반응초기인 반응온도 $20^{\circ}C$에서 도계슬러지에 열전도도가 물에 비해 2.11배정도 낮지만 $200^{\circ}C$에서는 도계슬러지의 열전도도가 $0.677W/m{\cdot}^{\circ}C$로 물과 유사하다. 따라서 열가수분해에 의한 슬러지의 물리적 특성변화는 열전달 효율에 매우 중요한 인자임을 확인하였고, 열가수분해반응기 최적 설계를 위한 경계조건으로 실험 측정값과 일치도가 99.69%인 반응온도에 따른 열전도도 함수를 도출하였다.

• 소성∙가공
• /
• 제29권1호
• /
• pp.44-48
• /
• 2020

Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al₂O₃) single crystals by PLD with AlN target and Y₂O₃ doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y₂O₃-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

• 융복합기술연구소 논문집
• /
• 제8권1호
• /
• pp.21-25
• /
• 2018

We developed nano-porous $TiO_2-SiO_2$ composites (commercial name : PTI, porous titania insulator) with low thermal conductivity as thermal insulating material as well as function of photocatalyst. The objectives of this paper are, firstly, to evaluate of the thermal conductivity of the PTI powder in the temperature range from -160 to $250^{\circ}C$, secondly to evaluate of thermal conductivities of insulation materials that is applied PTI powder. The structure of the PTI powder that has the pores size of 20-30 nm and the particle diameter of 2-10 nm. The PTI had a high surface area of $400m^2/g$ and a mean pore size of $45{\AA}$, which was fairly uniform. The thermal conductivity was measured by GHP(guarded hot plate) method and HFM(heat flux method). The PTI structure is a three-dimensional network nano-structures composed by a pearl-necklace that involved a precious stone in the center of the necklace. The thermal conductivities of PTI-PX powder by the GHP and HFM were 0.0366 W/m.K, 0.0314 W/m.K at $20^{\circ}C$, respectively. This is similar to values that are proportional to the square of the absolute temperature of the thermal conductivity of static air. The thermal conductivities of insulating sheets coated with PTI powder were similar results with that of the PTI powder.

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
• /
• pp.194-199
• /
• 2012

In this study, for increasing the efficiency of solar collector, the thermal conductivities and viscosities of the pure water and ethanol oxidized multi-walled carbon nanofluids were measured. Nanofluids were manufactured by ultra-sonic dispersing oxidized multi-walled carbon nanotubes(OMWCNTs) in the pure-water and ethanol at the rates of 0.0005 ~ 0.1 vol%. the Thermal conductivities and viscosities of manufactured nanofluids were measured at the low temperature($10^{\circ}C$), the room temperature($25^{\circ}C$) and the high temperature($70^{\circ}C$). For measuring thermal conductivity and viscosity, we used Transient Hot-wire Method and Rotational Digital Viscometer, respectively. As a result, under given temperature conditions, thermal conductivity of the 0.1 vol% pure-water nanofluid improved 7.98% ($10^{\circ}C$), 8.34% ($25^{\circ}C$), and 9.14% ($70^{\circ}C$), and its viscosity increased by 37.08% ($10^{\circ}C$), 33.96% ($25^{\circ}C$) and 21.64% ($70^{\circ}C$) than the base fluids. Thermal conductivity of the 0.1 vol% ethanol nanofluids improved 33.72% ($10^{\circ}C$), 33.14% ($25^{\circ}C$), and 32.36% ($70^{\circ}C$), and its viscosity increased by 37.93% ($10^{\circ}C$), 31.92% ($25^{\circ}C$) and 29.42% ($70^{\circ}C$) than the base fluids.