• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.62-62
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• 1999

Carbon based materials have many attractive properties such as a wide band gap, a low electron affinity, and a high chemical and mechanical stability. Therefore, researches on the carbon-based materials as field emitters have been drawn extensively to enhance the field emission properties. Especially, diamond gives high current density, high current stability high thermal conductivity durable for high temperature operation, and low field emission behaviors, Among these properties understanding the origin of low field emission is a key factor for the application of diamond to a filed emitter and the verification of the emission site and its distribution of diamond is helpful to clarify the origin of low field emission from diamond There have been many investigations on the origin of low field emission behavior of diamond crystal or chemical vapor deposition (CVD) diamond films that is intentionally doped or not. However, the origin of the low field emission behavior and the consequent field emission mechanism is still not converged and those may be different between diamond crystal and CVD diamond films as well as the diamond that is doped or not. In addition, there have been no systematic studies on the dependence of nondiamond carbon on the spatial distribution of emission sites and its uniformity. Thus, clarifying a possible mechanism for the low field emission covering the diamond with various properties might be indeed a difficult work. On the other hand, it is believed that electron emission mechanisms of diamond are closely related to the emission sites and its distributions. In this context, it will be helpful to compare the spatial distribution of emission sites and field emission properties of the diamond films prepared by systematic variations of structural property. In this study, we have focused on an understanding of the field emission variations of structural property. In this study, we have focused on an understanding of the field emission mechanism for the CVD grown undoped polycrystalline diamond films with significantly different structural properties. The structural properties of the films were systematically modified by varying the CH4/H2 ratio and/or applying positive substrate bias examined. It was confirmed from the present study that the field emission characteristics are strongly dependent on the nondiamond carbon contents of the undoped polycrystalline diamond films, and a possible field emission mechanism for the undoped polycrystalline diamond films is suggested.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.409-409
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• 2014

Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Bulletin of the Korean Chemical Society
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• v.17 no.9
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• pp.794-798
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• 1996

Solid solutions of the nonstoichiometric Dy1-xSrxCoO3-y system with the compositions of x=0.00, 0.25, 0.50, 0.75, and 1.00 have been synthesized by the solid state reaction at 1000 ℃ under atmospheric air pressure. The crystallographic structures of the solid solutions are analyzed by the powder X-ray diffraction patterns at room temperature. The analyses assign the compositions of x=0.00 and 0.25 to the orthorhombic system with space group of Pbnm/D2h16, the compositions of x=0.50 and 0.75 to the tetragonal system like a typical SrCoO2.86, and the composition of x=l.00 or SrCoO2.50 to the brownmillerite type system with space group of I**a. The reduced lattice volumes increase with x value due to the larger radius of Sr2+ ion than that of Dy3+ ion. The mole ratio of Co4+ ion to total Co ion with mixed valence state between Co3+ and Co4+ ions at B sites or τ value has been determined by an iodometric titration. All the samples except for the DyCoO3 compound show the mixed valnce state and thus the composition of x=0.50 has the maximum τ value in the system. The oxygen vacancies increasing with x value are randomly distributed over the crystal lattice except for the composition of x=l.00 which have the ordering of the oxygen vacancies. The nonstoichiometric chemical formulas of the Dy1-xSrxCo3+1-τCo4+τO3-(x-τ)/2 system are formulated from the x, τ, and y values. The electrical conductivity in the temperature range of 100 to 900 K increases with τ value linearly because of positive holes of the Co4+ ions in π* band as a conducting carrier. The activation energy of the x=0.50 as Ea=0.17 eV is minimum among other compouds. Broad and high order transition due to the overlap between σ* and π* bands broadened by the thermal activation is observed near 1000 K and shows a low temperature-semiconducting behavior. Magnetic properties following the Currie-Weiss law show the low to high spin transition in the cobaltate perovskite. Especially, the composition of x=0.75 presents weak ferromagnetic behavior due to the Co3+-O2--Co4+ indirect superexchange interaction.

• Journal of Soil and Groundwater Environment
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• v.13 no.1
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• pp.1-12
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• 2008

The purpose of this study is to characterize the hydrogeochemical characteristics of hot spring waters and to interpret the source of noble gases and the geochemical environment of the hot spring waters distributed along the eastern area of the Korean peninsula. For this purpose, We carried out the chemical, stable isotopic and noble gas isotopic analyses for eleven hot spring water and fourteen hot spring gas samples collected from six hot spring sites. The hot spring waters except the Osaek hot spring water show the pH range of 7.0 to 9.1. However, the Osaek $CO_2$-rich hot spring water shows a weak acid of pH 5.7. The temperature of hot spring waters in the study area ranges from $25.7^{\circ}C$ to $68.3^{\circ}C$. Electrical conductivity of hot spring waters varies widely from 202 to $7,130{\mu}S/cm$. High electrical conductivity (av., $3,890{\mu}S/sm$) by high Na and Cl contents of the Haeundae and the Dongrae hot spring waters indicates that the hot spring waters were mixed with seawater in the subsurface thermal system. The type of hot springs in the viewpoint of dissolved components can be grouped into three types: (1) alkaline Na-$HCO_3$ type including sulfur gas of the Osaek, Baekam, Dukgu and Chuksan hot springs, and (2) saline Na-Cl type of the Haeundae and Dongrae hot springs, and (3) weak acid $CO_2$-rich Na-$HCO_3$ type of Osaek hot spring. Tritium ratios of the Haeundae and the Dongrae hot springs indicate different residence time in their aquifers of older water of $0.0{\sim}0.3$ TU and younger water of $5.9{\sim}8.8$ TU. The ${\delta}^{18}O$ and ${\delta}D$ values of hot spring waters indicate that they originate from the meteoric water, and that the values also reflect a latitude effect according to their locations. $^3He/^4He$ ratios of the hot spring waters except Osaek $CO_2$-rich hot spring water range from $0.1{\times}10^{-6}$ to $1.1{\times}10^{-6}$ which are plotted above the mixing line between air and crustal components. It means that the He gas in hot spring waters was originated mainly from atmosphere and crust sources, and partly from mantle sources. The Osaek $CO_2$-rich hot spring water shows $3.3{\times}10^{-6}$ in $^3He/^4He$ ratio that is 2.4 times higher than those of atmosphere. It provides clearly a helium source from the deep mantle. $^{40}Ar/^{36}Ar$ ratios of hot spring water are in the range of an atmosphere source.