• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.516-518
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• 1996

Bimuth telluride type thermoelectrics are prepared by AC current applied got pressing method. It is possible to minimize the defects arising from the vaporization of Te, because of the very short processing time. The optimum conditions for the got pressing of 95mol% $Bi_2Te_3$-5mol%$Bi_2Se_3$ themoelectrics are sintered at $400^{\circ}C$, for 2min. with 1500 kgf/$cm^2$ from the particle size of 125 to 250 $\mu$m rang of powder. the resulted Z value (figure of merit) was 2.2$\times$10-3deg-1.

• Journal of the Korean Ceramic Society
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• v.47 no.5
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• pp.457-460
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• 2010

$SmCoO_3$ system was investigated for their application to themoelectric materials. All specimens showed p-type semiconducting behavior and their electrical conductivity ($\sigma$), Seebeck coefficient (S) and power factor were measured at high temperature. And the effect of dopant ions on their thermoelectrical properties were also investigated. $Fe^{3+}$ ion doped into $Co^{3+}$ site enhanced the Seebeck coefficient and decreased the electrical conductivity simultaneously. The maximum Seebeck coefficient value for 60% doping case reached to 780 ${\mu}V$/K at $240^{\circ}C$. However $Fe^{3+}$ doped system cause an negative effect on power factor value. In case of the pure phase, the maximum Seebeck coefficient value reached to 290 ${\mu}V$/K at $240^{\circ}C$ and the maximum electrical conductivity was obtained 748 1/(ohm$\times$cm) at $960^{\circ}C$. As a result, the maximum power factor was obtained $1.49\times10^{-4}$ W/$mK^2$ at $550^{\circ}C$.