• Proceedings of the Korea Water Resources Association Conference
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• 2008.05a
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• pp.1929-1933
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• 2008

조석에 의한 지하수위변동이 발생하는 해안가 암반대수층에서 고조(high tide)과 저조(low tide) 조건에서의 차이를 규명하기 위한 양수시험이 수행되었다. 본 연구에서 양수시험이 수행된 시험대 수층은 암반층으로서 시험공들은 해안가에서 약 180 m 이격되어 있으며, 양수정(MW1공)과 관측정(MW2공)의 이격거리는 8.05 m 이다. 양수정과 관측정 모두 공 내경은 0.205 m 이며, 케이싱심도는 지표면하 19 m 정도이다. 그리고, 양수정과 관측정의 지하수위는 지표면하 5 m 정도에 형성 되어 있으며, 시험대수층의 두께는 약 40 m 정도이다. 양수시험은 총 3회 수행되었으며, 모든 시험에서 수중모터 설치심도는 지표면하 30 m 이고 양수율은 $75\;m^3/day$로서 동일하였다. 그러나, 양수시작 시간의 차이를 두어 고조 후 1회(1차 시험), 저조 후 2회(2차 및 3차 시험) 수행되었다. 양수정과 관측정에서 자동수위측정기(Model 3001, Solinst)를 설치하여 관측된 지하수위변동 자료에 의하면, 조석현상 발생 후 시험공 내 지하수위변동 경과시간은 고조(high tide) 후 2시간, 저조 (low tide) 후 1시간 정도인 것으로 나타났다. 따라서, 양수시험 시 1차 시험은 고조 후 2시간 경과한 시점에서, 2차 및 3차 시험은 저조 후 1시간 경과한 시점에서 양수가 시작되었다. 양수시험에 의한 경과시간에 따른 수위강하량 그래프에서는 고조조건이 저조조건에 비해 수위강하량이 더 적은 것으로 나타났다. 이러한 원인은 저조에 비해 고조 조건에서는 해수에 의한 지하수위가 상승하여, 동일한 양수조건에서 수위강하량이 적게 나타난 것이다. 양수시험 자료가 AQTESOLV 3.5 프로그램을 이용하여 해석되었다. Theis method에 의해 산정된 수리전도도는 고조 조건의 양수시험에서는 $4.159{\times}10^{-6}\;m/sec$, 저조 후에서는 각각 $3.818{\times}10^{-6}\;m/sec$와 $3.926{\times}10^{-6}\;m/sec$ 이었다. 저조 후에 비해 고조 후의 수리전도도가 5% 이상 높은 것으로 산정되었다. 이상의 연구 결과들에 의해, 해안가 암반대수층에서는 양수시험 시 조석효과에 의한 수리적인 변동을 고려한 설계와 해석이 수행되어야함을 확인할 수 있었다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.4
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• pp.193-201
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• 2017

Financial firms strengthen to protect personal information from the leakage, introducing various security solutions such as print output security, internet network Isolation system, isolationg strorage of customer information, encrypting personal information, personal information detecting system, data loss prevention, personal information monitoring system, and so on. Financial companies are also entering the era of cutthroat competition due to accept of the new channels and the paradigm shift of financial instruments. Accordingly, The needs for security for customer information held by financial firms are keep growing. The large security accidents from the three card companies on January 2014 were happened, the case in which one of the outsourcing personnel seized customer personal information from the system of the thress card companies and sold them illegally to a loan publisher and lender. Three years after the large security accidents had been passed, nevertheless the security threat of the IT outsourcing workforce still exists. The governments including the regulatory agency realted to the financail firms are conducting a review efforts to prevent the leakage of personal information as well as strengthening the extent of the sanction. Through the analysis on the application of security policy for outsourcing personnel in case of large-scale Financial IT projects and the case study of appropriate security policies for security compliance, the theis is proposing a solution for both successfully completing large-scale financial IT Project and so far as possible minizing the risk from the security accidents by the outsouring personnel.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.