• Title/Summary/Keyword: Tetragonal $BaTiO_3$

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Electrical Properties of (Ba,Ca)(Ti,Zr)O3 Ceramics for Bimorph-type Piezoelectric Actuator

  • Shin, Sang-Hoon;Yoo, Ju-Hyun
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.4
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    • pp.226-229
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    • 2014
  • In this study, lead-free $(Ba_{0.85}Ca_{0.15})(Ti_{1-x}Zr_x)O_3$ ceramics and a bimorph-type piezoelectric actuator were fabricated using the normal oxide-mixed sintering method, and their dielectric properties, microstructure, and displacement properties were investigated. From the results of X-ray diffraction, the pattern of the specimen has a pure perovskite structure. In addition, no secondary impurity phases were found. The excellent piezoelectric coefficient of $d_{33}=454pC/N$, the electromechanical coupling factor $k_p=0.51$, the dielectric constant ${\varepsilon}_r=3,657$, the mechanical quality factor $Q_m=239$, and $T_c$(Tetragonal-Cubic) =$90^{\circ}C$ were shown at x= 0.085. ${\Delta}k_p/k_p20^{\circ}C$ and ${\Delta}f_r/f_r20^{\circ}C$ showed the maximum value of -0.255 and 0.111 at $-20^{\circ}C$ and $80^{\circ}C$, respectively. The maximum total-displacement was $60{\mu}m$ under the input voltage of 50 V. As a result, it is considered that lead-free $(Ba_{0.85}Ca_{0.15})(Ti_{1-x}Zr_x)O_3$ ceramics is a promising candidate for piezoelectric actuator application for x= 0.085.

Crystal Structure and Physical Property of Tetragonal-like Epitaxial Bismuth Ferrites Film

  • Nam, Joong-Hee;Biegalski, Michael;Christen, Hans M.;Kim, Byung-Ik
    • Proceedings of the Korean Magnestics Society Conference
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    • 2011.06a
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    • pp.7-8
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    • 2011
  • Basically, the lattice mismatch between film and substrate can make those BiFeO3(BFO) films distorted with strain structure. BFO phase can be stabilized on LaAlO3(LAO) represents the example of a multiferroic with giant axial ratio. Its crystal structure is not strictly tetragonal, but tetragonal with a slight monoclinic distortion and related to the rotation of the oxygen octahedra. In this study, we show that phases with a tetragonal-like epitaxial BFO films can indeed be ferroelectric and also can be stabilized via epitaxial growth onto LAO. Recent reports on epitaxial BFO films show that the crystal structure changes from nearly rhombohedral ("R-like") to nearly tetragonal("T-like") at strains exceeding approximately -4.5%, with the "T-like" structure being characterized by a highly enhanced c/a ratio. While both the "R-like" and the "T-like" phases are monoclinic, our detailed x-ray diffraction results reveal asymmetry change from MA and MC type, respectively. By applying additional strain or by modifying the unit cell volume of the film by substituting Ba for Bi, the monoclinic distortion in the "T-like" MC phase is reduced, i.e. the system approaches a true tetragonal symmetry. There are two different M-H loops for $Bi_{1-x}Ba_xFeO_{3-{\delta}}$(BBFO) and BFO films on SrTiO3(STO) & LAO substrates. Along with the ferroelectric characterization, these magnetic data indicate that the BFO phase stabilized on LAO represents the first example of a multiferroic with giant axial ratio. However, there is a significant difference between this phase and other predicted ferroelectrics with a giant axial ratio: its crystal structure is not strictly tetragonal, but tetragonal with a slight monoclinic distortion. Therefore, in going from bulk to highly-strained films, a phase sequence of rhombohedral(R)-to-monoclinic ["R-like" MA-to-monoclinic, "T-like" MC-to-tetragonal (T)] is observed. This sequence is otherwise seen only near morphotropic phase boundaries in lead-based solid-solution perovskites (i.e. near a compositionally induced phase instability), where it can be controlled by electric field, temperature, or composition. Our results show that this evolution can occur in a lead-free, stoichiometric material and can be induced by stress alone. Those major results are summarized as follows ; 1) Ba-doping increases the unit cell volume, 2) BBFO on LAO can be fully strained up to x=0.08 as a strain limit (Fig. 1), 3) P(E) & M(H) properties can be tuned by the variation of composition, strain, and film thickness.

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Properties of the Positive Temperature Coefficient Resistor Behavior on the Na and K Doped BaTiO3 (Na 및 K 치환에 따른 BaTiO3의 Positive Temperature Coefficient Resistor 특성)

  • Lee, Mi-Jai;Lim, Tae-Young;Kim, Sei-Ki;Hwang, Jong-Hee;Kim, Jin-Ho;Seo, Won-Seon
    • Korean Journal of Materials Research
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    • v.20 no.12
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    • pp.654-660
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    • 2010
  • The influences of Na and K content on the crystal phase, the microstructure and the electrical property of $BaTiO_3$-based thermistors was found to show typical PTC effects. The crystal phase of powder calcined at $1000^{\circ}C$ for 4hrs showed a single phase with $BaTiO_3$, and the crystal structure was transformed from tetragonal to cubic phase according to added amounts of Na and K. In XRD results at $43^{\circ}\sim47^{\circ}$, the $(Ba_{0.858}Na_{0.071}K_{0.071})(Ti_{0.9985}Nb_{0.0015})O_{3-\delta}$ showed (002) and (200) peaks but the $(Ba_{0.762}Na_{0.119}K_{0.119})(Ti_{0.9975}Nb_{0.0025})O_{3-\delta}$ showed (002), (020) and (200) peaks. In sintered bodies, those calcined at $600^{\circ}C$ rather than at $1000^{\circ}C$ were dense, and for certain amounts of Na and K showed rapid decreases in grain size. In relative permittivity, the curie temperature due to the transformation of ferroelectric phase rose with added Na and K but decreased in terms of relative permittivity. In the result of the R-T curve, the sintered bodies have curie temperatures of about $140^{\circ}C$ and the resistivity of sintered bodies have scores of $\Omega{\cdot}cm$; the jump order of sintered bodies was shown to be more than $10^4$ in powder calcined at $1000^{\circ}C$.

Optical Properties of Opal Glass on the Various Contents of Chemical Composition

  • Nguyen, Tuan Dung;N., Bramhe Sachin;Kim, Ji Ho;Kim, Taik-Nam
    • Korean Journal of Materials Research
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    • v.23 no.1
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    • pp.59-66
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    • 2013
  • Opal glass samples having different chemical compositions were synthesized and transparent glass was obtained after melting. The effects of $TiO_2$, $BaF_2$, and $CeO_2$ content on the color of the opal glass were studied by observing images of the opal samples and analyzing the results via ultraviolet visible spectroscopy and color spectrometry. The aesthetic properties of the opal glass were determined by studying the transmittance of visible light in the 400 nm to 700 nm range. The basic chemical composition of opal glass was $SiO_2$ 52.9 wt%, $Al_2O_3$ 12.35 wt%, $Na_2CO_3$ 15.08 wt%, $K_2CO_3$ 10.35 wt%, $Ca_3(PO)_4$ 4.41 wt%, $MgCO_3$ 1.844 wt%, $LiCO_3$ 2.184 wt%, and $TiO_2$ 0.882 wt%. The glass samples were prepared by varying the weight percentage of $TiO_2$, $BaF_2$, and $CeO_2$. The transmittance of visible light was decreased from 95 % to 75 % in the glass samples in which $TiO_2$ content was increased from 0 to 3.882 wt%. In the blue spectrum region, as the content of $TiO_2$ increased, the reflectance value was observed to become higher. This implies that $TiO_2$ content induces more crystal formation and has an important effect on the optical properties of the glass. The opalescence of opal samples that contained $CeO_2$ or $BaF_2$ is stronger than that in the samples containing $TiO_2$. Opal glass samples comprising $TiO_2$ had tetragonal lattice structures; samples including $CeO_2$ as an additive had cubic lattice structures (FCC, $CeO_2$).

Enhancement of PTCR Characteristics of MnO2 Doped Lead Free BaTiO3-(Bi0.5Na0.5)TiO3 Ceramics with High Tc (>165℃) (MnO2가 도핑된 무연 High Tc (>165℃) BaTiO3-(Bi0.5Na0.5)TiO3 세라믹의 PTCR 특성 향상)

  • Kim, Kyoung-Bum;Jang, Young-Ho;Kim, Chang-Il;Jeong, Young-Hun;Lee, Young-Jin;Paik, Jong-Hoo;Lee, Woo-Young;Kim, Dae-Joon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.9
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    • pp.723-727
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    • 2011
  • 0.935Ba$TiO_3$-0.065($Bi_{0.5}Na_{0.5}$)$TiO_3+xmol%MnO_2$ (BBNTM-x) ceramics with $0{\leq}x{\leq}0.05$ were fabricated with muffled sintering by a modified synthesis process. Their microstructure and enhanced positive temperature coefficient of resistivity (PTCR) characteristics were systematically investigated in order to obtain lead-free high TC PTCR thermistors. All specimens showed a perovskite structure with a tetragonal symmetry and no secondary phase was observed. Grain growth was achieved when the doped MnO2 was increased above 0.02 mol%. This is due to the effect of positive Mn ion doping as an acceptor compensating a Ba vacancy occurred by the higher donor dopant concentration of $Bi^{3+}$ ion. Especially, enhanced PTCR characteristics of the extremely low ${\rho}_{RT}$ of $9\;{\Omega}{\cdot}cm$, PTCR jump of $5.1{\times}10^3$, ${\alpha}$ of 15.5%/$^{\circ}C$ and high $T_C$ of $167^{\circ}C$ were achieved for the BBNTM-0.04 ceramics.

Rietveld Refinement and Crystal Structure of K-Ba Substituted Synthetic Hollandite, ($K_{2x}Ba_{1-x}Cr_2Ti_6O_{16}$) (리트벨트법을 이용한 K-Ba 치환 합성 홀란다이트($K_{2x}Ba_{1-x}Cr_2Ti_6O_{16}$)의 결정구조 연구)

  • 최진범;김태현
    • Journal of the Mineralogical Society of Korea
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    • v.14 no.2
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    • pp.128-136
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    • 2001
  • The K-Ba complete solid solution of 7 synthetic hollandite-type minerals ($K_{2x}$ $Ba_{1-x}$ $Cr_2$/$Ti_{6}$ $O_{16}$ , x=0, 0.1, 0.3, 0.5, 0.7, 0.9, 1.0, respectively) are studied by the X-ray powder diffraction and Rietveld refinement to find structural transformation during substitution of $Ba^{2+}$ by $K^{+}$ in A site of the tunnel structure of hollandite. Rietveld indices indicate that $R_{wp}$ with respect to $R^{exp}$ ($R_{wp}$ $R_{exp}$ ) are in the range of 15.66%/20.90% and 14.74%/l9.37%, $R_{B}$ and S(Goodness of Fitness) are 6.45~8.97%, 1.45~1.63, respectively. Unit cell parameters of synthetic hollandites, space group 14/m, are a=10.1194(2)~10.0599(2)$\AA$, c=2.9572(6)~2.9512(7)$\AA$, and V=302.75~298.66$\AA^{3}$. Rutile formed as an impurity in those with more than 50% K contents in hollandite series. Substitution of Ba by K ion in a tunnel structure results in constant decrease of cell parameters, but is not sufficient enough to change the hollandite structure. Our data indicate that transformation of tetragonal 14/m to lower symmetry of monoclinic 12/m in hollandite structure may at least be affected by other cation substitution in same A site and/or by cation substitution in B site.

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Structural and piezoelectric properties of lead-free (1-x)$(Na_{0.5}\;K_{0.5})NbO_3$-xBa($Ti_{0.9}$, $Sn_{0.1}$)$O_3$ ceramics

  • Cha, Yu-Jeong;Nam, San;Kim, Chang-Il;Jeong, Yeong-Hun;Lee, Yeong-Jin;Baek, Jong-Hu
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.33.1-33.1
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    • 2009
  • Lead-free (1-x)$(Na_{0.5}K_{0.5})NbO_3$-xBa($Ti_{0.9}Sn_{0.1})O_3$ [NKN-BTS-100x] ceramics doped with 1 mol% $MnO_2$ have been prepared by the conventional solid state method and their structural and piezoelectric properties were investigated. The NKN-BTS-100x ceramics exhibited a dense and homogeneous microstructure when they were sintered at $1030-1150^{\circ}C$. Grain growth was observed for the specimen sintered at relatively low temperature of $1050^{\circ}C$. A tetragonal/orthorhombic morphotropic phase boundary (MPB) in the perovskite structure was also appeared for the NKN-BTS-100x ceramics (0.04$1050^{\circ}C$. The enhanced piezoelectric properties in the NKN-BTS ceramics with a MPB composition were obtained. Especially, for the NKN-BTS-6 ceramics, a high dielectric constant (${\varepsilon}^T_3/\varepsilon_0=1,400$), piezoelectric constant ($d_{33}=237$) and electromechanical coupling factor ($k_p=0.42$) were obtained.

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The Structural and Dielectric Properties of the PZT/BST Heterolayered Thin Films with RF Power (RF Power에 따른 PZT/BST 이종층 박막의 구조 및 유전 특성)

  • Lee Sang-Chul;Nam Sung-Pil;Lee Sung-Gap;Lee Young-Hie
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.1
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    • pp.13-17
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    • 2005
  • The Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃/(Ba/sub 0.6/Sr/sub 0.4/)TiO₃[PZT/BST] heterolayered thin films were deposited on Pt/Ti/SiO₂/Si substrates by using the RF sputtering method with different RF power. The PZT/BST heterolayered thin films had the tetragonal structure of the PZT phase and BST phase. Increasing the RF power. the intensity of the PZT (100), (110) peaks and BST (111) peaks were decreased and the intensity of the BST (100), (110) peaks were increased. The thickness ratio of the top layered BST thin film and the bottom layered PZT thin film was 2 to1. The atomic concentration of the Ba, Sr, Pb. Zr, Ti atoms were constant in the PZT thin films and BST thin films, respectively. The Pt atom was diffused to the PZT region in the PZT/BST heterolayered thin films deposited at condition of 60[W] RF power. Increasing the frequency, dielectric constant and loss of the PZT/BST heterolayered thin films were decreased. The dielectric constant and loss of the PZT/BST heterolayered thin films deposited with RF power of 90[W] were 406 and 3%, respectively.

The Dielectric Properties of PZT(52/48)/BST(60/40) Heterolayered Thin Film Prepared bv RF Sputtering Method (RF 스퍼터링법을 이용한 PZT(52/48)/BST(60/40) 이종층 박막의 유전 특성)

  • Kwon, Hyun-Yul;Kim, Ji-Heon;Choi, Eui-Sun;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1621-1623
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    • 2004
  • The $Pb(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4})TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using the RF sputtering method with RF powers of 60,70,80,90[W]. All thin films showed the peaks of the tetragonal phase. Increasing the RF power, dielectric constant and loss of the PZT(52/48)/BST(60/40)] heterolayered thin films were decreased. The thickness ratio of PZT and BST thin films was 1/1. The relative dielectric constant and the dielectric loss of the PZT(52/48)/ BST(60/40) heterolayered thin films were 562 and 13%, respectively.

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Properties Optimization for Perovskite Oxide Thin Films by Formation of Desired Microstructure

  • Liu, Xingzhao;Tao, Bowan;Wu, Chuangui;Zhang, Wanli;Li, Yanrong
    • Journal of the Korean Ceramic Society
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    • v.43 no.11 s.294
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    • pp.715-723
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    • 2006
  • Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.