• Korean Journal of Materials Research
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• v.17 no.2
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• pp.68-72
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• 2007

Optimum compositions for piezoelectric properties of $(Bi_{0.5}Na_{0.5})_{(1-x)}Ba_xTiO_3$ ceramics were investigated in the range of $x=0{\sim}0.1$ covering rhombohedral to tetragonal phase regions. No impurity phases other than a perovskite phase were found and the grain size decreased with increasing x. A two-phase coexisting morphotropic phase area rather than boundary dividing rhombohedral and tetragonal phase regions appeared to exist at $x=0.05{\sim}0.08$. As for piezoelectric properties within morphotropic phase compositions, the piezoelectric constant ($d_{33}$) and the electromechanical coupling factor ($K_p$) showed peak values at x=0.065, 192 pC/N and 34%, respectively, indicating x=0.065 as an optimum composition for piezoelectric $(Bi_{0.5}Na_{0.5})_{(1-x)}Ba_xTiO_3$ ceramics.

• Bulletin of the Korean Chemical Society
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• v.16 no.10
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• pp.908-911
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• 1995

The EPR spectra of Cu-or Zr-doped BaTiO3 ceramics exhibited absorption signals with g∥=2.380 and g⊥=2.063 which are assigned to Ba1+(Ba2+ + e'→Ba1+) ion reduced by an electron that was produced from the oxygen vacancy (VO..). The intensity of these signals decreased as the temperature increased indicating that Ba1+ was changed to Ba2+ as the temperature increased. These ceramics also showed the EPR signal with g=1.997 around TC which arises from ionized Ba-vacancies, VBa'(VBa + e'→VBa'. In the orthorhombic and tetragonal phase region g=1.997 signal was not seen. The electrons generating from the oxidation of Ba1+ and ionized Ba-vacancies may contribute to a space charge which is responsible for a dielectric relaxation of these samples.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.623-628
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• 2014

Orthorhombic $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals are fabricated using the cost-effective solid-state single crystal growth (SSCG) method; their dielectric and piezoelectric properties are also characterized. Measurements show that (001) $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals have an electromechanical coupling factor ($k_{33}$) higher than 0.83, piezoelectric charge constant ($d_{33}$) of about 400 [pC/N], and piezoelectric voltage constant ($g_{33}$) higher than 50 [${\times}10^{-3}Vm/N$]. The transition temperature ($T_{OT}$) of the (001) $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals between orthorhombic and tetragonal phases is also observed to be about $61^{\circ}C$. Because their electromechanical coupling factor ($k_{33}$) and piezoelectric voltage constant ($g_{33}$) are higher than those of soft PZT ceramics, it is expected that (001) $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals can be used as "lead-free" piezoelectric materials in many piezoelectric applications.

• Journal of the Mineralogical Society of Korea
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• v.1 no.2
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• pp.94-103
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• 1988

Diamond anvil cell (DAC) interfaced with a YAG laser heating system has been used to study the phase transformations on perovskite structured titanates ($BaTiO_3$, and $PbTiO_3$) and to synthesize the silicate perovskite phase from the orthopyroxenes of $MgSiO_3$ and $(Mg_{0.87},\;Fe_{0.13})SiO_3$. $BaTiO_3$ and $PbTiO_3$ transform from tetragonal phase to cubic at the pressures of approximately 2.6 GPa and 4.0 GPa at room temperature, respectively. Cubic phases of the both show wide range of stability in the extended in-situ high pressures and high temperature regions. Starting orthoenstatite of $MgSiO_3$ has yielded the perovskite phase as the major structure with ilmenite, gamma-spinel, betta-spinel and stishovite phases at ~38 GPa and ${\sim}1,000^{\circ}C$. $(Mg_{0.87},\;Fe_{0.13})SiO_3$ has shown the perovskite as the major phase with betta-spinel, stishovite and enstatite phases at ~35 GPa and ${\sim}1,000^{\circ}C$. The ilmenite phase does not occur at this condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.607-610
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• 2004

The Pb $(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4}TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were fabricated on the Pt/Ti/$SiO_2$/Si by RF sputtering method. The structural properties of the PZT(52/48)/BST(60/40) heterolayered thin films were investigated with Ar/$O_2$ ratio condition. All the PZT(52/48)/BST(60/40) heterolayered thin films had shown the PZT(111), (200) and BST(200) Peaks of the tetragonal structure. Increasing the Ar/$O_2$ ratio, the average roughness was increased. The thickness ratio of the to the PZT and BST thin film was 1:2. In the case of the PZT(52/48)/BST(60/40) heterolayered thin films with Ar/$O_2$ ratio of 80/20, the average roughness was 3.4 [nm].

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.555-559
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• 2006

Using the $Ba_{0.5}Sr_{0.5}TiO_3$(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the $Al_2O_3 $substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with $1{\sim}10$ wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 MHz.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.190-195
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• 1995

Temperature dependences of the dielectric constant K(T), remanent polarization $P_{r}$, (T), effective birefringence overbar .DELTA.n(T), transmitted light intensity and quadratic electro optic coefficient R(T) of the two-stage sintered xBa(L $a_{1}$2/N $b_{1}$2/) $O_{3}$-(1-x)Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$(x=0.085, 0.09, 0.40.leq.y.leq.0.70) ceramics were investigated. Increasing the PbZr $O_{3}$ contents, the crystal structure of a specimen was changed from a tetragonal phase to a rhombohedral and cubic phase, and the phase transition was showed a diffuse phase transition(DPT) characteristics. In the compositions which located on the PE-FE phase boundary, the discrepancy was observed between the Curie temperature and temperature which a microscopic polarization and effective birefringence were disappeared.red.d.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.5-6
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• 2006

Using the $(Ba_{0.5}Sr_{0.5}){TiO_3}$(BST) powders prepared by the Sol-Gel method, the EST thick films were fabricated on the ${Al_2}{O_3}$ substrates coated with Pt by the screen printing method. Compared with pure EST thick films, the structural and dielectric properties of the EST thick films doped with 1${\sim}$10 wt % MgO were investigated. It was observed that the Mg substitution into EST causes a shift in the cubic-tetragonal EST phase transition peak to a lower temperature. The microstructure of the EST substituted with Mg was homogeneous and dense. Mg substitution into EST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of EST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 158] and 1.4 % at 1 MHz.

• Journal of Ceramic Processing Research
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• v.20 no.6
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• pp.603-608
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• 2019

In this study, the multilayered thin films of (Ba,Sr)TiO3/K(Ta,Nb)O3 were fabricated by the sol-gel and spin coating methods, and their structural and electrical properties were investigated. The specimen showed polycrystalline X-ray diffraction (XRD) characteristics with a tetragonal structure. The average grain size and film thickness for one coating were about 30~40nm and 60nm, respectively. The phase transition temperature of specimen was lower than 10 ℃. The dielectric constant and loss at 20 ℃ of the specimen coated six times were 1,231 and 0.69, respectively. The rate of change in dielectric constant at an applied direct current (DC) voltage of the six times coated thin films was 17.3%/V. The electrocaloric effect was the highest around the temperature at which the remanent polarization rapidly changed. When an electric field of 660kV/cm was applied to the triply coated thin films, the highest electrocaloric property of 4.41 ℃ was observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.404-407
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• 2016

In this study, to develop low temperature sintering capacitor composition ceramics with the good dielectric properties, $(Ba_{0.86}Ca_{0.14})(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of $B_2O_3$ addition on the dielectric properties and microstructure was investigated. The XRD patterns demonstrated that all the specimens showed Perovskite phase, and secondary phases are indicated in the measurement range of XRD. And also, temperature coefficient of capacitance(TCC) of all the specimen sintered at $1,180^{\circ}C$ showed +3~-56% except for x=0.006. For all the specimens, observed one peak was tetragonal cubic difuse phase transition temperature(Tc), which is located in the vicinity of room temperature.