• Korean Journal of Optics and Photonics
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• v.12 no.6
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• pp.503-506
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• 2001

When DC voltages from 5 V up to 90 V are applied to a transmitter chip excited by an ultrafast lacer beam, the terahertz electromagnetic pulses and their spectra are changed. The spectrum shifts to the high frequency range when the high DC voltage is applied to the chip. At that time, the signal-to-noise ratio is increased from 250: 1 to 10,000: 1. The spectrum can expand up to 4 THz by optimal realignment of the THz system. Also, two terahertz electromagnetic pulses are generated from a receiver chip when the laser detection beam is reflected to the back side of the chip.

• Current Optics and Photonics
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• v.6 no.6
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• pp.619-626
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• 2022

In this study, we develop a three-dimensional (3D) terahertz time-of-flight (THz-TOF) imaging technique with a large depth range, based on asynchronous optical sampling (ASOPS) methods. THz-TOF imaging with the ASOPS technique enables rapid scanning with a time-delay span of 10 ns. This means that a depth range of 1.5 m is possible in principle, whereas in practice it is limited by the focus depth determined by the optical geometry, such as the focal length of the scan lens. We characterize the spatial resolution of objects at different vertical positions with a focal length of 5 cm. The lateral resolution varies from 0.8-1.8 mm within the vertical range of 50 mm. We obtain THz-TOF images for samples with multiple reflection layers; the horizontal and vertical locations of the objects are successfully determined from the 2D cross-sectional images, or from reconstructed 3D images. For instance, we can identify metallic objects embedded in insulating enclosures having a vertical depth range greater than 30 mm. For feasible practical use, we employ the proposed technique to locate a metallic object within a thick chocolate bar, which is not accessible via conventional transmission geometry.

• ETRI Journal
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• v.45 no.2
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• pp.193-202
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• 2023

We demonstrate the transmission of uncompressed 4K videos over the photonics-based terahertz (THz) wireless link using a directly modulated distributed feedback laser diode (DFB-LD). For optical heterodyne mixing and data modulation, a DFB-LD was employed and directly modulated with a 5.94-Gb/s non-return-to-zero signal, which is related to a 6G-serial digital interface standard to support ultra-high-definition video resolution. We derived the optimal frequency of the THz carrier by varying the wavelength difference between DFB-LD output and Tunable LD output in the THz signal transmitter to obtain the best transmission performances of the uncompressed 4K video signals. Furthermore, we exploited the negative laser-to-filter detuning for the adiabatic chirp management of the DFB-LD by the intentional discrepancy between the center wavelength of the optical band-pass filter and the output wavelength of the DFB-LD. With the help of the abovementioned methods, we successfully transmitted uncompressed 4K video signals over the 2.3-m wireless transmission distance without black frames induced by time synchronization error.

• Current Optics and Photonics
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• v.7 no.5
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• pp.569-573
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• 2023

We utilized terahertz time-domain spectroscopy (THz-TDS) to measure the thickness and electrical properties of nickel-chromium (Ni-Cr) films. This technique not only aligns well with traditional methods, such as haze-meter and transmission-densitometer measurements, but it also reveals the electrical properties and thickness of films down to a few tens of nanometers. The complex conductivity of the Ni-Cr thin films was extracted using the Tinkham formula. The experimental values closely aligned with the Drude model, indicating the reliability of our Ni-Cr film's electrical and optical constants. The thickness of Ni-Cr was estimated using the complex conductivity. These findings emphasize the potential of THz-TDS in quality control of metallic nanofilms, pointing toward an efficient and nondestructive test (NDT) for such analyses.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.300.2-300.2
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• 2014

테라헤르쯔(terahertz : THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지(meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한(low-temperature grown : LT) InGaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 LT-InGaAs:Be/InAlAs multi quantum well (MQW)를 well과 barrier를 가각 $10{\mu}m$ 씩 100주기 성장을 하였고 Ti와 Au를 각각 30, $200{\mu}m$로 dipole antenna를 제작 하였다. 이 때 Ti:sapphire femto-pulse laser (30 fs/90 MHz)를 excitation source로 사용하였을 때 9000 pA로 LT-InGaAs epilayer (180 pA)보다 50배 이상 큰 전류 신호를 얻을 수 있었다. THz 발생과 검출을 초소형, 초경량, 고효율로 하기 위해서는 fiber-optic를 이용해야 하는데 이때 분산과 산란 손실이 가장 적은 1550 nm 대역에서 많은 연구가 이루어 졌다. 780, 1560 nm의 mode-locking laser (90 fs/100 MHz)를 사용하여 현재 많이 이용되고 있는 Ti:sapphire femto-pulse laser와 비교하여 THz 특성 변화를 확인하는 연구를 진행 하고 있다.

• Journal of the Korean Society for Nondestructive Testing
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• v.37 no.1
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• pp.1-6
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• 2017

In this study, a terahertz time domain spectroscopy (THz-TDS) imaging technique was used to measure doping concentration and physical properties (such as refractive index and permittivity) of the doped silicon (Si) wafers. The transmission and reflection modes with an incidence angle of $30^{\circ}$ were employed to determine the physical properties of the doped Si wafers. The doping concentrations of the prepared Si wafers were varied from $10^{14}$ to $10^{18}$ in both N-type and P-type cases. Finally, the correlation between the doping concentration and the power of the THz wave was determined by measuring the powers of the transmitted and reflected THz waves of the doped Si wafers. Additionally, the doped thickness, the refractive index, and permittivity of each doped Si wafer were calculated using the THz time domain waveform. The results indicate that the THz-TDS imaging technique is potentially a promising technique to measure the doping concentration as well as other optical properties (such as the refractive index and permittivity) of the doped Si wafer.

• Electronics and Telecommunications Trends
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• v.21 no.4 s.100
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• pp.129-141
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• 2006

최근의 광-나노 기술의 발전에 힘입어, 테라헤르츠(THz)파 분야에 있어서 기술혁신이 이루어지고 있다. THz 시간영역 분광법, THz-QCL, 서브-THz 무선 통신, 서브-THz전기신호 처리기술 및 THz 디바이스 등 다양한 THz파 관련 연구 성과가 폭넓게 전개되고 있어, 새로운 과학기술 분야의 하나로서, 또 신규산업의 개척을 짊어지는 것으로서 크게 기대되는 기술이다. 따라서 구체적인 장래 전망을 명확히 하기 위하여 THz 기술에 관한 기술동향을 분석하였다. 본 고에서는 기술동향 분석 결과를 토대로 THz파 기술의 현황과 전망에 관하여 설명하고, 차세대 핵심기술(core-technology) 창출을 목표로, THz 전자파, THz-photonics, THz-electronics 세 가지 연구분야의 총합적인 추진을 제안하고자 한다.

• Journal of the Optical Society of Korea
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• v.19 no.6
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• pp.673-678
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• 2015

Terahertz dual-band frequency selective surface filters made by perforating two different rectangular holes in molybdenum have been designed, fabricated and measured. Physical mechanisms of the dual-band resonant responses are clarified by three differently configured filters and the electric field distribution diagrams. The design process is straightforward and simple according to the physical concept and some formulas. Due to the weak coupling between the two neighboring rectangle holes with different sizes in the unit cell, good dual-band frequency selectivity performance can be easily achieved both in the lower and higher bands by tuning dimensions of the two rectangular holes. Three samples are fabricated, and their dual-band characteristics have been demonstrated by a THz time-domain spectroscopy system. Different from most commonly used metal-dielectric structure or metal-dielectric-metal sandwiched filters, the designed dual-band filters have advantages of easy fabrication and low cost, the encouraging results afforded by these filters could find their applications in dual-band sensors, THz communication systems and other emerging THz technologies.

• Journal of Communications and Networks
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• v.15 no.6
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• pp.569-575
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• 2013

In this paper, we present a photonic approach for generating highly stable coherent sub-terahertz (THz) signals for wireless communications. As proof-of-concept we transmit data at 100 GHz carrier frequency using on-off keying modulation and heterodyne detection. The sub-THz carrier signals are generated by photo-mixing two optical carrier signals at different frequencies, extracted from an optical frequency comb. We introduce a novel system to stabilize the phase of the optical carrier signals. Error-free transmission is successfully achieved up to a bit rate of 8.5 Gbit/s at 100 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.576-580
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• 2013

We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain structures as the promising plasmonic THz detectors.