• Title/Summary/Keyword: Temperature dependent characteristics

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Electrical properties of SOI n-MOSFET's under nonisothermal lattice temperature (격자온도 불균일 조건에서 SOI n-MOSFET의 전기적 특성)

  • 김진양;박영준;민홍식
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.3
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    • pp.89-95
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    • 1996
  • In this ppaer, temeprature dependent transport and heat transport models have been incorperated to the two dimensional device simulator SNU-2D provides a solid bse for nonisothermal device simulation. As an example to study the nonisothermal problem. we consider SOI MOSFET's I-V characteristics have been simulated and compared with the measurements. It is shown that negative slopes in the Ids-Vds characteristics are casused by the temperature dependence of the saturation velocity and the degradation of the temperature dependence mobility. Also it is shown that the kink effect occurs when impact ionization near the drain produces a buildup of holes in this isolated device island, and the hysteresis is caused by the creation of holes in the channel and their flow to the source.

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Temperature dependance of Leakage Current of Nitrided, Reoxided MOS devices (질화, 재산화시진 모스 절연막의 온도 변화에 따른 누설전류의 변화)

  • 이정석;장창덕;이용재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.71-74
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    • 1998
  • In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

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Optical Characteristics of Er and Yb co-doped YCa4B3O10 (Er과 Yb이 동시 도핑된 YCa4B3O10의 광 특성)

  • Jang, Won-Kweon;Yu, Young-Moon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.12
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    • pp.1082-1086
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    • 2007
  • Optical characteristics of $YCOB(YCa_4B_3O_{10})$, known as a crystal of self frequency doubling, was investigated when Yb and Er ions were co-doped 20 % and 2 %, respectively. The absorption cross section of Er,Yb:YCOB crystal at $1.0\;{\mu}m$ was larger than that of Yb:YCOB, which means that the former was profitable for more energy absorption than the latter. The fluorescent lifetime at $1.5\;{\mu}m$ was measured to be 1.27 ms at room temperature, and lengthened to 1.54 ms and 1.62 ms at low temperatures of 77 K and 6 K, respectively. The line widths of fluorescent spectrum at $1.5\;{\mu}m$ were getting narrower as lowering temperature. However, we didn't observe a temperature dependent peak wavelength shift.

Electrical Conduction Properties of OLED Device with Varying Temperature (온도 변화에 따른 OLED 소자의 전기전도 특성)

  • Lee, Ho-Shik;Kim, Gwi-Yeol;Park, Yong-Pil
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.12
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    • pp.2361-2365
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    • 2007
  • Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3- methylrhenyi)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum(Alq3) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

A Numerical Study on the $NO_{x}$ Reduction in 500MW Pulverized Coal Tangential Firing Boiler (500MW급 접선분사형 미분탄보일러의 $NO_{x}$ 저감에 관한 수치해석적 연구)

  • Choi, Choeng-Ryul;Kang, Dae-Woong;Kim, Chang-Nyung;Park,, Man-Heung;Kim, Kwang-Chu;Kim, Jong-Kill
    • Proceedings of the KSME Conference
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    • 2001.06d
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    • pp.967-972
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    • 2001
  • The emission of $NO_{x}$ during coal combustion is a major reason of environment impact. $NO_{x}$ is an acid rain precursor and participates in the generation of smog through ozone production. $NO_{x}$ can be divided into thermal $NO_{x}$, fuel $NO_{x}$ and prompt $NO_{x}$. Thermal $NO_{x}$ is formed in a highly temperature condition dependent. Fuel $NO_{x}$ is dependent on the local combustion characteristics and initial concentration of nitrogen bound compound, while prompt $NO_{x}$ is formed in a significant quantity in some combustion environments, such as low temperature and short residence times. This paper presents numerical simulation of the flow and combustion characteristics in the furnace of a tangential firing boiler of 500MW with burners installed at the every comer of the furnace. The purpose of this paper is to investigate the reduction of $NO_{x}$ emission in a 500MW pulverized coal tangential firing boiler with different OFA's and burner angles. Calculations with different air flow rates of over fired air(OFA) and burner angles are performed.

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Effect of Matrix Structures on the Fracture Characteristics of Austempered C/V Graphite Iron (오스템퍼링처리한 C/V흑연주철의 파괴특성에 미치는 기지조직의 영향에 관한 연구)

  • Kim, Chang-Gyu;Kim, Hong-Beum;Choi, Chang-Ock
    • Journal of Korea Foundry Society
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    • v.16 no.2
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    • pp.109-115
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    • 1996
  • Effect of various austempered structures on fracture characteristics of C/V graphite cast iron has studied. The tensile strength and hardness reached the maximum value of 971.4MPa and HB302 at the austempering temperature of $250^{\circ}C$, respectively. As the austempering temperature increased, the amount of retained austenite increased from 18% to 22, 29%, while $K_{IC}$ values ranged from the value of $65MPa{\cdot}m^{12} to 70MPa{\cdot}m^{1/2}, 66MPa{\cdot}m^{1/2}. This fact that $K_{IC}$ value was not sensitive to the increase of the amount of the retained austenite was that $K_{IC}$ was dependent on the matrix structure in lower bainitic matrix, while dependent on the notch effect from C/V graphite shape in upper bainitic matrix. Fractured surfaces showed a ductile fracture pattern at $300^{\circ}C$. Very large coalescence by C/V graphite and relatively small voids by spheroidal graphite were observed.

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Damping Effect of Reinforced Polyurethane Foam under Various Temperatures

  • Lee, Tak-Kee;Kim, Myung-Hyun;Rim, Chae-Whan;Chun, Min-Sung;Suh, Yong-Suk
    • International Journal of Ocean System Engineering
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    • v.1 no.4
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    • pp.230-235
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    • 2011
  • Reinforced polyurethane foam (RPUF) is one of the important materials of Mark III type insulation systems used in liquefied natural gas (LNG) cargo containment systems. However, RPUF is the most difficult material to use with regard to its safety assessment, because there is little public and reliable data on its mechanical properties, and even some public data show relatively large differences. In this study, to investigate the structural response of the system under compressive loads such as sloshing action, time-dependent characteristics of RPUF were examined. A series of compressive load tests of the insulation system including RPUF under various temperature conditions was carried out using specimens with rectangular section. As a result, the relationship between deformation of RPUF and time is linear and dependent on the loading rate, so the concept of strain rate could be applied to the analysis of the insulation system. Also, we found that the spring constant tends to converge to a value as the loading rate increases and that the convergence level is dependent on temperature.

Effects of Temperature and Pressure on the Breakdown Characteristics of Liquid Nitrogen

  • Baek, Seung-Myeong;Joung, Jong-Man;Kim, Sang-Hyun
    • KIEE International Transactions on Electrophysics and Applications
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    • v.3C no.5
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    • pp.171-176
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    • 2003
  • For practical electrical insulation design of high temperature superconducting (HTS) power apparatuses, knowledge of the dielectric behavior of both liquid nitrogen (L$N_2$) and subcooled liquid nitrogen (SL$N_2$) are essential. To achieve SL$N_2$ at atmospheric pressure, cryostat was designed and constructed. By pumping up the L$N_2$ in the outer dewar, the temperature of L$N_2$ in the inner dewar at atmospheric pressure can be controlled. The breakdown characteristics of L$N_2$ in quasi-uniform and non-uniform electrical fields for temperatures ranging from 77 K to 65 K at atmospheric pressure and pressure ranging from 0.1 to 0.5 MPa were investigated experimentally. The experimental data suggested that the breakdown voltage (BDV) of L$N_2$ is both highly temperature and pressure dependent. We also carried out statistical analysis of the experimental results using the Weibull distribution. The Weibull shape parameter m for the sphere-to-plane electrodes in SL$N_2$ was estimated to be 11 to 18.

Dynamic characteristics for Double Gate MOSFET (더블게이트 MOSFET의 동적 특성)

  • Ko Suk-woong;Jung Hak-kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.9 no.8
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    • pp.1749-1753
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    • 2005
  • In this paper, we have investigated electrical characteristics by action temperature of double gate structure that have main gate and side gate. Could know current-voltage characteristic is superior in ultra low temperature (77 K) as well as in room temperature (300 K). Also, conditions of most suitable for get superior DG MOSFET's dynamic characteristics are main gate length of 50nm and side gate length of 70nm and could know that should be approved more than voltage 2V. Also, this DG MOSFET usefully use may as digital device because on-off characteristic is superior.

Driving Method for Mis-discharge Improvement at Low Temperature in AC PDP (AC PDP의 저온에서의 오방전 개선을 위한 구동 방법)

  • Kim, Gun-Su;Lee, Seok-Hyun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.6
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    • pp.1157-1165
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    • 2009
  • In AC-PDP, it is necessary to achieve high luminance efficiency, high luminance and high definition by adopting technologies such as high xenon concentration, MgO doping, and long gap. However, it is very difficult to apply above technologies because they make the driving voltage margin reduced. Especially, high Xe concentration technology for high efficacy makes not only the driving voltage margin reduced but also the stability of reset discharge decreased at low temperature. In this paper, we studied temperature and voltage dependent stability of reset discharge and present the experimental results of the discharge characteristics at low temperature. In addition, we suggested the mechanism of bright noise and black noise at low temperature. Finally, we proposed double reset waveform to improve the bright noise and descending scan time method to improve the black noise.