• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.886-892
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• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.152-156
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• 2000

Bi-thin films are fabricated by an ion beam sputtering, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Journal of the Korean Society of Safety
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• v.25 no.4
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• pp.30-35
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• 2010

For the safe handling of acetone, the flash point, the explosion limit at $25^{\circ}C$ and the temperature dependence of the explosion limits were investigated. And the AIT for acetone were experimented. By using the literatures data, the lower and upper explosion limits of acetone recommended 2.5 vol% and 13.0 vol%, respectively. In this study, the lower flash points of acetone recommended $-20^{\circ}C$. This study was determined relationship between the AITs and the ignition delay times by using ASTM E659-78 apparatus for acetone, and the experimental AIT of acetone was $565^{\circ}C$. The new equations for predicting the temperature dependence of the explosion limits of acetone is proposed. The values calculated by the proposed equations were a good agreement with the literature data.

• Transactions of Materials Processing
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• v.14 no.9 s.81
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• pp.751-755
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• 2005

This paper is concerned with spring back after sheet forming of bulk amorphous alloys in the super cooled liquid state. The temperature-dependence and strain-rate dependence of Newtonian/non-Newtonian viscosities as well as the stress overshoot/undershoot behavior of amorphous alloys are reflected in the thermo-mechanical Finite Element simulations. Hemispherical deep drawing operations are simulated for various forming conditions such as punch velocity, die comer radius, friction, blank holder force, clearance and initial funning temperature. Here, spring back by an instantaneous elastic unloading was followed by thermal deformation during cooling, and two modes of spring back are examined in detail. It could be concluded that the superior sheet formability of an amorphous alloy can be obtained by taking the proper forming conditions for loading/unloading.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.7
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• pp.901-907
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• 1995

The switching characteristics of As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film were investigated under d.c. bias. And the frequency dependence of the conductivity was analysed with regard to the temperature dependence, in order to find the physical properties of the As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film ; a characteristic relaxation time (.tau.$_{0}$ ), the spatial density of defect states (N), and the localized wavefunction (.alpha.$^{-1}$ ). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.7-7
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• 2010

The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The frequency dependence of dielectric loss showed a value within 0.03 in frequency ranges of 1~1000[kHz].

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.157-161
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• 2001

The observe relaxation phenomena and freezing behavior in Pb(Mg/sub ⅓/Nb/sub ⅔/O₃, relaxor ferroelectrics, weak electric-field properties as well as strong electric-field properties were investigated. The temperature dependence of the dielectric properties obtained using the low electric-field of 1 V/w was investigated. The dielectric properties obtained from the slope of the dielectric hysteresis loop and the temperature dependence of the pyroelectric properties were also investigated. When fitting all the experimental data with the Vogel-Filcher relation, a close agreement between the experimental data and equation was observed. The freezing temperature could be consistently calculated by the various methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.59-63
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$ This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Journal of the Korean Society of Safety
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• v.26 no.2
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• pp.36-41
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• 2011

For the safe handling of n-hexane, the explosion limit at $25^{\circ}C$, the temperature dependence of the explosion limits and the lower flash point were investigated. And AITs(auto-ignition temperatures) by ignition delay time for n-hexane were experimented. By using the literatures data, the lower and upper explosion limits of n-hexane recommended 1.0 Vol% and 8.0 Vol%, respectively. In this study, the lower flash points of n-hexane recommended $-23^{\circ}C$. This study measured relationship between the AITs and the ignition delay times by using ASTM E659-78 apparatus for n-hexane, and the experimental AIT of n-hexane was $240^{\circ}C$. The new equations for predicting the temperature dependence of the explosion limits of n-hexane is proposed. The values calculated by the proposed equations were a good agreement with the literature data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.