• 한국레이저가공학회지
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• 제8권3호
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• pp.5-10
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• 2005

[ $InxGa_{1-x}P/GaAs$ ] structures were grown by chemical beam epitaxy(CBE), Pure phosphine($PH_3$) gases were used as group V sources. for the group III sources, TEGa, TmIn were used. $InxGa_{1-x}P$ epilayer was grown on SI-GaAs substrate and has a 1-${\mu}m$ thick. We have investigated the characteristics of $InxGa_{1-x}P$ by the photoreflectance(PR) spectroscopy, The PR spectrum of $InxGa_{1-x}P$ shows third-derivative feature whose Peaks Provide energy gap. The energy gap of $InxGa_{1-x}P$ has deduced composition x. From temperature dependance of PR spectra, temperature coefficient is $dEg/dT=-3.773{\times}10^{-4}$ eV/K, and Varshni coefficients $\alpha$ and $\beta$ values obtained $4{\times}10^4$ eV/K and 267 K respectively. Also, interaction $\alpha$B was 19.4 meV using the Bose-Einstein temperature relation, and $\Theta$ value related the average phonon frequency were 101.4 K. In particular, shoulder peak related to defects observed in PR signal that measured in temperature 82 K.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 추계학술대회
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• pp.368-371
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• 2006

[ $La_{0.8}Sr_{0.2}Co_{1-x}Mn_xO_3$ ] cathode as a high performance cathode on YSZ electrolyte was studied by analyzing impedance spectra. It was shown that cathode property of $La_{0.8}Sr_{0.2}Co_{1-x}Mn_xO_3$ is bet ter than that of$La_{0.8}Sr_{0.2}CoO_3$. At $700^{\circ}C$ in air environment, $La_{0.8}Sr_{0.2}Co_{0.4}Mn_{0.6}O_3$ cathode on CGO- layered YSZ electrolyte showed very low area specific resistance of $0.14{\Omega}cm^2$, which is low enough for intermediate-temperature sol id oxide fuel cells. This is because material properties of ionic conductivity and thermal expansion compatibility with electrolyte were optimized. Judging from activation energy and oxygen part i al pressure dependance of cathode property, it was noted that oxygen surface exchange kinetics is dominantly influential on cathode property in higher temperature region than $700^{\circ}C$ and oxygen self-diffusion in cathode material is more influential in lower temperature region.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.18-22
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• 2006

Epitaxial aluminum nitride films on 6H-SiC (0001) were fabricated using reactive RF magnetron sputtering and post-deposition rapid thermal annealing. The electrical properties of AIN films depending on film thickness and measurement temperature have been observed. Full width at half maximum of AIN (0002) was $0.1204^{\circ}$ (about 430 arcsec) X-ray rocking curve results. The equivalent oxide thickness (EOT) of AIN film was estimated as about 10 nm and the leakage current density was within the order of $10^{-8} 4/cm^2$. The dielectric constant of AIN film estimated from the accumulation region of C-V curve measured at $300^{\circ}C$ was 8.3. The dynamic dielectric constant was obtained as 5.1 from J vs. 1/T plots at the temperature ranging from R.T. to $300^{\circ}C$ From above, estimation temperature dependance of the electrical properties of Al/AIN/SiC MIS devices was affirmed and useful data compilation for the reliabilities of SiC MIS is expected.

• 한국안전학회지
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• 제11권3호
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• pp.81-88
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• 1996

In order to investigate the electrical properties of transformer oils for large power, the characteristics of AC and Impulse breakdown in gap length of 1.0~2.5mm and that of volume resistivity were researched in temperature range of 20~$100^{\circ}C$. An geometrical capacitance of electrode with coaxial cylindrical shape for measuring the volume resistivity was 16pF, and highmegohm meter with model no. VMG-1000 was used, and also the applied voltage were DC 100, 250 and 500V. In the dependance of breakdown characteristics due to electrode gap length, it was confirmed that breakdown voltage was nearly uniform by volume effect according to the increase of gap. In the characteristics for AC breakdown, the dielectric strength was increased to $90^{\circ}C$ but decreased over $90^{\circ}C$, and also in case of impulse breakdown, it was increased to 7$0^{\circ}C$ and at dated $70^{\circ}C$ over in temperature range. The calculated mobility of oils in the characteristics for impulse breakdown were about $10^{-5}$~$10^{-4}cm^2/V{\cdot}S$, and the value of volume resistivity was almost invariable in low temperature range, regardless of voltage by the stable thermal properties, and it indicated a peak at $50^{\circ}C$ and had a sudden change to decrease over that temperature, and also the value of volume resistivity in 250V/mm at $80^{\circ}C$ is suitable for the International electrical standards, it was confirmed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.242-242
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• 2007

To verify the applicability of High Temperature Superconducting (HTS) cable system into the real grid, the HTS cable system with the specification of 22.9 kV, 1250 A, 100 m long was installed in the second quarter of 2006, and the long term field test has been in progress at the KEPCO's Gochang power testing yard. Apart from the conventional power cable, HTS cable system requires sufficient thermo-mechanical strength to endure a large temperature difference. To date, the KEPCO HTS cable system was cooled down and warmed to the room temperature several times to investigate the influence of thermal cycles experimentally. Dielectric properties, critical current dependance and heat losses were evaluated at each step of thermal cycle. The test results showed that thermal cycle did not induce the degradation of dielectric properties, and the critical current decreased to 5 % of the initial value.

• E2M - 전기 전자와 첨단 소재
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• 제10권5호
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• pp.425-433
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• 1997

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 82$0^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$was observed in all of the obtained films.lms.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1071-1074
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• 2002

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}Torr$. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$: and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.671-674
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• 2004

BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820 $^{\circ}C$ and the highly condensed ozone gas pressure(PO3) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795 $^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785\;^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• 한국정보통신학회논문지
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• 제15권8호
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• pp.1791-1796
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• 2011

가우스 광분포를 가지는 KrF 엑시머 레이저와 위상마스크를 이용해 3dB 파장 선폭이 0.7 nm인 단주기 광섬유 격자(Fiber Bragg Grating)가 제작되었고, 이 격자의 파장에 따른 삽입 손실이 단일파장 광원과 cutback방식을 이용해 측정되었다. 이 격자의 온도 의존성을 확인하기 위해 -10 $^{\circ}C$ ~ 70 $^{\circ}C$ 범위에서 중심 파장의 변화를 측정하였는데 0.01 nm/$^{\circ}C$을 얻었으며 이 값은 온도 변화 방향과 무관하였다. 진폭마스크를 이용해 3 dB 선폭이 14.22 nm인 장주기 격자도 제작되었으며 이 경우는 같은 온도 범위에서 0.044 nm/$^{\circ}C$로 단주기 격자에 비해 온도 의존성이 4배 이상 컸다. 장주기 격자는 광섬유 코팅의 존재 여부도 온도 변화에 큰 영향을 미쳤다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.605-608
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• 2001

With the intention of investigating the breakdown properties of oil-immersed transformer oils in temperature range of $20\sim100[^{\circ}C]$, we are made researches AC breakdown in the gap of $500\sim2500[{\mu}m]$. The classification for the physical properties of oil for oil-immersed transformer by FTIR and H-NMR experiments was confirmed to type of mineral oils. As the dependance of breakdown properties due to electrode gap length variation, breakdown voltage was found increasing according to the increase of gap, while dielectric strength was decreasing. As a result the characteristics for AC breakdown, It goes to prove that the breakdown voltage was increased to $90[^{\circ}C]$ but decreased over $90[^{\circ}C]$ in the temperature range. Also, breakdown voltage was found increasing in the increase of gap and the rising of temperature according to Weibull distribution.