• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.256-257
• /
• 2008

Recently, with the increase of demand of electricity, electric cable or electric transfer machine are rapidly developed and meet the demand with the extra high voltage and massive capacity, the dangers of electrical accident of insulator are increasing by the electric stress, insulation degradation and insulation breakdown in insulator. In this paper, it is investigated that the temperature dependance of dielectric strength in nano-composites. We obtained that breakdown voltage of 0.4 [wt%] specimens is higher than the other $SiO_2$ content.

• Proceedings of the KIEE Conference
• /
• 1994.07a
• /
• pp.76-78
• /
• 1994

Owing to the discover of oxide superconducting over critical temperature100K, it is being made experimentally somewhere under the possibility that there is superconducting magnet by cooling liquid nitrogen. The issues of thermal stability and quench process of Low-Tc superconductor has been studied and used application of oxide superconducting magnets. However the quench propagation property of oxide superconductor, especially experimental data about thermal behavior has not been reported yet. Therefore we measured the effect of temperature dependance of quench propagation velocity, Vq, by using the short samples made up of silver sheathed Bismuth-family (2223phase) superconducting oxide tape.

• Journal of the Korean institute of surface engineering
• /
• v.37 no.3
• /
• pp.158-163
• /
• 2004

ITO thin film was deposited on the glass by RF magnetron sputtering. Dependance of the process parameters such as thickness, target-to-substrate distance, substrate temperature and oxygen partial pressure on the transmittance and electrical resistance of ITO film were investigated. The deposition conditions for getting better optical and electrical ITO characteristics were the 1800-$2300\AA$ thickness, 65mm substrate-to-target distance, $350^{\circ}C$ substrate temperature and 8% oxygen partial pressure. At these conditions, the transmittance and sheet resistance of the ITO film were 83.3% and 77.86Ω/$\square$, respectively.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2003.12a
• /
• pp.250-250
• /
• 2003

• Proceedings of the Korean Magnestics Society Conference
• /
• 1997.11a
• /
• pp.72-73
• /
• 1997

• Proceedings of the KIEE Conference
• /
• 1984.07a
• /
• pp.193-194
• /
• 1984

• Proceedings of the KIEE Conference
• /
• 1987.07a
• /
• pp.361-364
• /
• 1987

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.5
• /
• pp.413-417
• /
• 1998

In this paper, we investigate frequency dependance of inductance of FeCoB amorphous magnetic films. $(Fe_{1-x}Co_x)_{79}Si_2B_{19}$ was used as the basic composition of amorphous magnetic film having near zero magnetostriction. The amorphous magnetic films were fabricated with x=0.94 and x=0.95 by using sputtering method at high frequency. The films were anneald under non-magnetic field and near crystallization temperatures(30min at $280^{\circ}C$, 30min and 1hr at $400^{\circ}C$, respectively). As the results of the experiments with the fabricated films, the lowest coercive force was 0.084[Oe] at 400[W] of the input power and the crystallization temperature was $360^{\circ}C$ . In the case 30min at 40$0^{\circ}C$ the inductance value in the low frequency with x=0.95 was higher by 488% than that with x=0.94. The quality factor Q was below 0.7 for all samples. We obtained the highest quality value at 400[KHz] with 30min at $280^{\circ}C$ and x=0.94. The value was about 0.62. Also, the quality factor value was about 0.35 at 1[MHz] with 30min at $280^{\circ}C$ and x=0.95.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.17 no.1
• /
• pp.131-140
• /
• 1993

The activation energy for high temperature creep is associated with stresses, temperatures, straians And the creep strain appears to be a function of a temperature, compensated time, namely $te^{-}$.DELTA.H/RT/, and the stress. In fact this functional relation appears to be isomorphic to material structure by x-ray analyses. Applying this functional relation, the dependance of activation energy for A17075 creep was investigated. The activation energy for creep is insensitive to stress, temperature, structure, and strain. And phenomenological model agrees with experimental creep data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.9
• /
• pp.686-691
• /
• 2012

In this paper, we designed a Chua's chaotic circuit using transcondcutor based nonlinear resistor. Proposed chaotic circuit consist of L, C, R and transcondcutor based Chua's diode. We performed SPICE simulation for chaotic dynamics such as time seriesform, frequency analysis and phase plane of the circuit. Chaotic dynamics of the circuit was analysed according to MOS size variation of the operational transconductance amplifier. Also, we performed SPICE circuit analysis for temperature dependance of the circuit. SPICE results showed that chaotic dynamics of the circuit varied according to the temperature variation and chaotic signals were generated in specific temperature conditions.