• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.311-316
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• 2010

$Zr_{0.7}Sn_{0.3}TiO_4$ (ZST) thin films were fabricated by metal-organic decomposition, and their dielectric properties were investigated in order to evaluate their potential use in passive capacitors for rf and analog/mixed signal integrated circuits. The ZST thin film annealed at the temperature of $800^{\circ}C$ showed a dielectric constant of 27.3 and a dielectric loss of 0.011. The capacitor using the ZST film had quadratic and linear voltage coefficient of capacitance (VCC) of -65 ppm/$V^2$ and -35 ppm/V at 100 kHz, respectively. It also exhibited a good temperature coefficient of capacitance (TCC) value of -32 ppm/$^{\circ}C$ at 100 kHz.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.20-21
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• 2006

In this study, structural and microwave dielectric properties of the ${Ba_5}{B_4}{O_{15}}$ (B=Ta, Nb} cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the ${Ba_5}{B_4}{O_{15}}$ (B=Ta, Nb) ceramics prepared by conventional mixed oxide method and sintered at $1325^{\circ}C{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the ${Ba_5}{Ta_4}{O_{15}}$ ceramics were increased continuously with increasing of sintering temperature. And the bulk density and dielectric constant of the ${Ba_5}{Nb_4}{O_{15}}$ ceramics was increased in $1375^{\circ}C{\sim}1400^{\circ}C$ but decerased in $1425^{\circ}C$. In the case of ${Ba_5}{Ta_4}{O_{15}}$ ceramics sintered at $1475^{\circ}C$ and ${Ba_5}{Nb_4}{O_{15}}$ ceramics sintered at $1400^{\circ}C$, The dielectric constant and quality factor, and temperature coefficient of the resonant frequency (TCRF) were 25.15, 53,105 GHz, $-3.06\;ppm/^{\circ}C$ and, 39.55, 28,052 GHz, $5.7\;ppm/^{\circ}C$ respectively.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.827-835
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• 1992

The effects of CeO2 on the properties of cordierite-based glass-ceramics and its applicability to low firing temperature substrate were examined. Glass-ceramics were prepared by sintering the glass powder compacts at 900~100$0^{\circ}C$ for 3 h. Density, bending strength, dielectric constant and thermal expansion coefficient of the glass-ceramics were measured as functions of CeO2 contents and sintering temperatures. By adding CeO2, dense glass-ceramics were obtained below 100$0^{\circ}C$. dielectric constant and bending strength were more dependent on the porosity of glass-ceramics containing 5 wt% CeO2, sintered at 100$0^{\circ}C$ for 3 h, were as follows; relative density is 95.3%, bending strength is 178$\pm$11 MPa, dielectric constant is 4.98$\pm$0.20 (at 1 MHz) and thermal expansion coefficient is 33.7$\times$10-7/$^{\circ}C$. Therefore, the glass-ceramics containing 5 wt% CeO2 appeared to be suitable for low firing temperature substrate of electronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.726-730
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• 2001

Temperature stabilities of dielectric constraints and resonant frequencies of the substrates are very important in piezoelectric ceramics oscillators and filters. In this study, it was investigated temperature stability of the length-extensional vibration mode of Pb(Zr$\_$y/Ti$\_$1-y/)O$_3$+x[wt%]Cr$_2$O$_3$ ceramics. The mode can be utilized in fabricating ultra-small 455 kHz IF devices. Addition of Cr$_2$O$_3$ in morphotrophic phase PZT decreased the variations of dielectric constant, electro-mechanical coupling factor k$\_$31/ and resonant frequency by thermal shock. As additive weight of Cr$_2$O$_3$increased, the temperature coefficient of resonant frequency changed from positive number to negative one. And the composition tith temperature coefficient of resonant frequency was shifted to the one with increased Cr$_2$O$_3$ additive weigh by thermal aging.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.993-996
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• 2001

In the composition of 0.16BaO-0.15(Nd$\_$0.87/,Bi$\_$0.13/)$_2$O$_3$-0.69TiO$_2$$.$Glass [EG-2782] 3wt% addition sintered at 1080$^{\circ}C$, we could obtained microwave properties of dielectric constant $\varepsilon$$\_$r/= 80.1, quality factor Q ${\times}$ f = 810 (at 3.5 GHz]) and temperature coefficient of resonant frequency $\tau$$\_$f/ = -1.3 [ppm/$^{\circ}C$]

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1487-1489
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• 1994

$(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$ system which has a dielectric constant, low dielectric loss and temperature coefficient was investigated. Temperature coefficient varied from positive to negative with increasing of NiO. For the NiO content 1.0wt%. i.e $(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$, the ceramic showed very good dielectric properties such as ${\epsilon}$=37.8, $Q{\times}f_o=49.000$ and ${\tau}_r= 4{\pm}1ppm/^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1131-1137
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• 1996

The dielectric properties and phase stabilities of Pb(Zn0.6Mg0.4)1/3Nb2/3O3 [PZMN]system were investigated into substitution of A-site with Ba, Sr and Ca ions. The A-site substitutions led to the complexity of components of perovskite phase and then DPT coefficient increased. The A-site substitutions of Ba or Sr ion perovskite single phase could be easily formed by columbite process due to increase of perovskite phase stability. The variation of lattice parameters in specimen obeyed Vegard's law and curie temperature and dielectric constant of specimen decreased linearly. But Ca substitution led to perovskite phae instability. The lattice parameter dielectric constant and curie temperature of specimens drasticaly decreased with formation of pyrochlore phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.405-408
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• 1997

The microwave dielectric properties of CuO and CdO addition of BiNbO$_4$ceramics were investigated. As the content of CdO increased, sintered density and quality factor is decreased. With increase in sintering temperature, the dielectric constant and quality factor is increased. In case of specimen sintered at 96$0^{\circ}C$ with 0.03 wt% CuO and CdO, the microwave dielectric properties obtained were dielectric constant of 41.2, quality factor (Q$\times$f) of 6, 500, temperature coefficient of resonant frequency of ppm/$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.346-347
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• 2005

In this study, in order to develop the low temperature sintering ceramics, PZT ceramics adding $MnO_2$, $B_2O_3$ were manufactured, and their piezoelectric and dielectric properties is investigated. The results of this study were gotten such as follows. The electromechanical coupling coefficient(kp) showed good properties on the whole, showed its maximum value 28.266 in specimens sintered at 1200[$^{\circ}C$]. The mechanical quality coefficient(Qm) showed its maximum value 162.61 in specimens sintered at 1200[$^{\circ}C$] and was increased by increasing sintering temperature. The dielectric constant showed the optimum values of 538.903 at specimen sintered at $1000^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.662-665
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• 2002

The microwave dielectric properties and the microstructures of $Tm_2O_3$-modified $BiNbO_4$ ceramics were investigated. $Bi_{(1-x)}Tm_xNbO_4$ ceramics combined with orthorhombic and triclinic phases were identified at sintering temperatures of $920{\sim}960^{\circ}C$. The apparent density decreased slightly with the increasing Tm content. Regardless of the Tm content the dielectric constant $(\varepsilon_r)$ of all compositions except x=0.1 in $Bi_{(1-x)}Tm_xNbO_4$ ceramics saturated at the range of 42~44. The $Q{\times}f_0$ values of 6,000-12,000(GHz) were obtained for all compositions when the sintering temperatures were in the range of $920{\sim}960^{\circ}C$. The temperature coefficient of the resonant frequency$(\tau_f)$ can be also adjusted with increasing the amount of the doped Tm from a positive value of $+15ppm/^{\circ}C$ to a negative value of $-20ppm/^{\circ}C$. The $Bi_{(1-x)}Tm_xNbO_4$ ceramics can be possibly applied to multilayer microwave devices with low processing temperatures.