• Title/Summary/Keyword: Teflon Film

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A Study on the Way to Increase Heat Resistance of Teflon Type Thin Film Electret Applied for Industrial Sensor (산업용 센서에 사용하는 Teflon계 박막 일렉트렛의 내열성 향상에 관한 연구)

  • 김병수;이덕출
    • Journal of the Korean Society of Safety
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    • v.18 no.3
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    • pp.60-63
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    • 2003
  • For the increase the charge stability of teflon electrets for used at uncomfortable industrial circumstances with high temperature or humidity, We made an investigation into double layer effect of teflon electrets. Teflon AF film was spincoated on FEP film and then the charge storage property of AF/FEP dual film was investigated to be compared with FEP film. It was found that the AF/FEP dual film has higher surface potential than FEP film on the repeated charging and annealing process. It seems that AF/FEP dual film has higher thermal stability than FEP film through TSC measurement. If the investigations of the double layer effect of Teflon film carried out more closely with it's molecular structures and surface conditions, it may be effectively improved the stability of charge storage.

The Thermal Stability of Teflon AF/FEP Double Layer Film Electret (Teflon AF/FEP 이중 필름 일렉트렛트의 열적 안정성)

  • 김병수;이덕출
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.8
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    • pp.693-699
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    • 2003
  • To improve thermal stability of Teflon FEP which is the most widely used materials for electret application, Teflon AF film of 1 $\mu\textrm{m}$ thick was spin coated on FEP film and the charge storage properties were investigated. The surface potential depend on aging temperature. Thermal Stimulated Current(TSC), Atomic Force Microscopy(AFM), and Fourier Transform-Infrared Spectroscope(FT-lR) measurements were carried out. It is shown that the AF/FEP dual film have more higher electrical property and thermal stability than that FEP film have caused by charge stored at interface of AF and FEP.

Aerosol Wall Loss in Teflon Film Chambers Filled with Ambient Air

  • Lee Seung-Bok;Bae Gwi-Nam;Moon Kil-Choo
    • Journal of Korean Society for Atmospheric Environment
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    • v.20 no.E1
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    • pp.35-41
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    • 2004
  • Aerosol wall loss is an important factor affecting smog chamber experiments, especially with chambers made of Teflon film. In this work, the aerosol wall loss was investigated in 2.5 and $5.8-m^3$ cubic-shaped Teflon film chambers filled with ambient air. The natural change in the particle size distribution was measured using a scanning mobility particle sizer in a dark environment. The rate of aerosol wall loss was obtained from the deposition theory suggested by Crump and Seinfeld (1981). The measured rates of aero-sol wall loss were In a good agreement with the theoretical and experimental values given by McMurry and Rader (1985), implying that the electrostatic effect enhances particle deposition on the chamber wall. The significance of aerosol wall loss correction was demonstrated with the photochemical reaction experiments using the ambient air.

A study on Improvement of Electric charge storage characteristics using $Teflon^{(R)}FEP$ film ($Teflon^{(R)}FEP$ film을 사용한 전하보존특성 향상에 관한 연구)

  • Kim, Seong-Jun;Lee, Hyeon-Seok;Kwon, Jeong-Yeol;Kim, Ji-Kyun;Lee, Heon-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.539-540
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    • 2006
  • In this paper, We examine that characteristics of formative electret with polymer film and electric charge storage using grid corona discharge. compound polymer of fluorine resin used for material in electret because of high electric charge accumulation, excellent electrical and physical characteristic. All experiments were carried out with circular samples of $Teflon^(R)FEP$ film, 12.5[${\mu}m$] thick. As experiment variables, we used voltage, electrode thickness, discharge electrode gap, and discharge time. According to this variables, we studied on characteristics of formative electret and electric charge storage. Additionally we make a comparative study of the result between the grid corona discharge and needle electrode discharge.

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A Study on Properties of C-V Degradation due to Heating in Teflon (테프론의 가열에 의한 C-V 열화 특성에 관한 연구)

  • Lee, Sung Ill
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.11
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    • pp.730-735
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    • 2014
  • In this study, the temperature characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film which is degradated at the $120^{\circ}C{\sim}200^{\circ}C$ temperature range in the oven for 10 hours has been measured in through the applied frequency range of 0.1 kHz~4,800 kHz at temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Also, in the same conditions, the frequency characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film has been measured in through the applied temperature range of $30^{\circ}C{\sim}70^{\circ}C$ on setting frequency of 0.1 kHz, 1 kHz, 10 kHz, 100 kHz. The results of this study are as follows. When the frequency range of 0.1 kHz~4,800 kHz applied to the sample of Teflon film, the electrostatic capacity has been measured at the temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Through this measurement, it found that the electrostatic capacity decreased with increasing temperature. Regarding this result, may be it is because the electromagnetic coupling is degraded by thermal degradation. When the sample of Teflon film heated at $280^{\circ}C$ for 10 hours in oven, the dielectric loss has changed from unstable status to stabilizing status with increasing the degradation temperature in the $120^{\circ}C$, $160^{\circ}C$, $200^{\circ}C$ range. In this measurement, the two spectrums of dielectric loss appeared. It considers that this spectrum of dielectric loss appeared in 300 Hz is caused by the molecular motion of the C-F or OH group. Through this study, It found that the electrostatic capacity decreased with increasing frequency and temperature, and there is no change in dielectric loss, although the frequency increases.

Efficient organic light-emitting diodes with Teflon buffer layer

  • Zhang, Deqiang;Gao, Yudi;Wang, Liduo;Qiu, Yong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.269-271
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    • 2004
  • In this report, high-performance organic light-emitting diodes (OLEDs) with polytetrafluoroethylene (Teflon) buffer layer are demonstrated. Compared with conventional buffer layer, copper phthalocaynine (CuPc), Teflon film shows lower absorption in the wavelength from 200nm to 800nm The OLEDs with Teflon and CuPc buffer layer were fabricated under same conditions, and the device performances were compared. The results indicate that when the thickness of Teflon is 1.5nm, the performance of OLEDs is greatly enhanced with an efficiency of 9.0cd/A at the current density of 100mA/$cm^2$, while the device with an optimized 30-nm-thick CuPc buffer layer only shows an efficiency of6.4cd/A at the same current density.

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Thermoelectric properties of $(Bi,;Sb)_2;(Te,;Se)_3$-based thin films and their applicability to temperature sensors ($(Bi,;Sb)_2;(Te,;Se)_3$계 박막의 열전 특성 및 온도 센서로의 응용)

  • 한승욱;김일호;이동희
    • Journal of the Korean Vacuum Society
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    • v.6 no.1
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    • pp.69-76
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    • 1997
  • P-type ($Bi_{0.5}Sb_{1.5}Te_3$) and n-type ($Bi_2Te_{2.4} Se_{0.6}$) thermoelectric thin film were deposited on glass and Teflon substrates by the flash evaporation technique. The changes in thermoelectric properties, such as Seebeck coefficient, electrical conductivity, carrier concentration, carrier mobility, thermal conductivity, and figure of merit, were investigated as a function of film thickness and annealing condition. Figures of merit of the thin films annealed at 473 K for 1 hour were improved to be $1.3{\times}10^{-3}K^{-1}$ for p-type and $0.3{\times}10^{-3}K^{-1}$ for n-type, and they were almost independent of film thickness. Temperature sensors were fabricated from the thin films having the above mentioned properties. And thermo-emf, sensitivity, and time constant of the sensors were measured to evaluate their characteristics for temperature sensors. Thin film sensors deposited on Teflon substrates showed better performance than those on glass substrates, and their sensitivity and time constant were 2.91 V/W and 28.2 sec respectively for the sensor of leg width 1 mm$\times$length 16 mm.

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Effect of Oxygen Pressure on the Electrical Properties of ZnO Transparent Thin Films on Flexible Teflon Substrate (산소압력이 테프론 휨성 기판위에 형성된 ZRO 투명박막의 전기적 특성에 미치는 영향)

  • Suh Kwang Jong;Chang Ho Jung
    • Korean Journal of Materials Research
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    • v.15 no.4
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    • pp.271-274
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    • 2005
  • We investigated the crystalline and electrical properties of ZnO thin films for transparent electrode as a function of the oxygen pressures during the deposition. The ZnO thin films were deposited on a flexible teflon substrates by the pulsed laser deposition. From the X-ray diffraction, ZnO films showed c axis oriented ZnO(0002) crystal structure. The FWHM (full width at half maximum) values decreased from $0.51^{\circ}\;to\;0.34^{\circ}$ as the oxygen pressure increased from 0.1 mTorr to 10.0 mTorr showing the improvement of crystallinity. The resistivity and hall mobility of ZnO film deposited at the oxgen pressure of 0.1 mTorr at $200^{\circ}C$ was about $5\times10^{-4}\Omega{\cdot}cm\;and\;20cm^2/V{\cdot}s$, respectively. The optical transmittance of the ZnO films on flexible teflon substrate was found to be above $85\%$.

Effect of Interfacial Tensions on Pressure Drop of Two-Phase Plug Flow in Round Mini-channels -A Preliminary Investigation- (원형 미소 채널 내 계면장력이 Plug flow 압력강하에 미치는 영향에 관한 선행 연구)

  • Lee, Chi-Young;Lee, Sang-Yong
    • Proceedings of the KSME Conference
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    • 2007.05b
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    • pp.1882-1887
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    • 2007
  • In the present experimental study, the effect of interfacial tensions on pressure drop of air-water two-phase flow in round mini-channels was investigated. A glass (highly wettable) tube and a Teflon (poorly wettable) tube, both in 350 mm length but 1.8 mm and 1.59 mm in inner diameters each, were used for the tests. All the experiments were performed only in the plug flow regime, confirmed by visualization. In the glass tube, the gas plugs were surrounded by the liquid film along the inner periphery. On the other hand, the inner wall remained dry at the gas portion in the Teflon tube. The pressure drop of the plug flow in the Teflon tube without the liquid film) appeared much larger than in the glass tube (with the liquid film) due to dissipation of energy by movement of the wetting lines. In this paper, various correlations on the two-phase pressure drop of plug flows were compared and a modified correlation was proposed, taking account of the surface wettability.

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Characterization of Fluorocarbon Thin Films by Contact Angle Measurements and AFM/LFM (접촉각 측정과 AFM/LFM을 이용한 불화 유기박막의 특성 평가)

  • 김준성;차남구;이강국;박진구;신형재
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.1
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    • pp.35-40
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    • 2000
  • Teflon-like fluorocarbon thin film was deposited on various substrates by vapor deposition using PFDA (perfluorodecanoic acid). The fluorocarbon films were characterized by static/dynamic contact angle analysis, VASE (Variable-angle Spectroscopic Ellipsometry) and AFM/LFM (Atomic/Lateral Force Microscopy). Based on Lewis Acid/Base theory, the surface energy ($S_{E}$) of the films was calculated by the static contact angle measurement. The work of adhesion (WA) between de-ionized water and substrates was calculated by using the static contact data. The fluorocarbon films showed very similar values of the surface energy and work of adhesion to Teflon. All films showed larger hysteresis than that of Teflon. The roughness and relative friction force of films were measured by AFM and LFM. Even though the small reduction of surface roughness was found on film on $SiO_2$surface, the large reduction of relative friction farce was observed on all films. Especially the relative friction force on TEOS was decreased a quarter after film deposition. LFM images showed the formation of "strand-like"spheres on films that might be the reason far the large contact angle hysteresis.

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