• 대한화학회지
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• 제50권4호
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• pp.315-320
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• 2006

도핑된 망간 산화물을 저온 산화환원반응을 통하여 합성하였다. 분말X선 회절분석 결과는 황이 도핑된 화합물이 층상 birnessite 구조로, 그리고 셀레늄 도핑 시료는 터널 -MnO2 구조로 결정화 되어 있음을 나타낸다. 이와 대조적으로 텔루륨이 도핑된 시료는 비정질상으로 잘 발달된 회절 피크를 보이지 않는다. EDS분석으로부터 칼코겐 원소가 망간 산화물 격자 내에 망간원소에 대해 4-7%의 농도로 도핑되었음을 확인하였다. 이들 물질을 이루는 구성원소의 화학결합상태를 X선 흡수 분광분석법 (XAS)을 이용하여 조사하였다. Mn K-흡수단 XAS 결과로부터 +3/+4가 혼합 원자가 상태를 가지는 망간 이온이 산소 팔면체 자리에 안정화 되어 있다는 사실을 확인하였다. Se K-와Te L1-흡수단 XAS 분석 결과는 중성인 Se과 Te 원소가 산화제인 KMnO4와의 반응을 통해 +6가 양이온으로 산화되었음을 보여준다. 결정구조와 망간의 산화상태를 감안하면 이들이 리튬 이차전지용 전극물질로서 응용 가능할 것으로 기대된다.

• Journal of Ceramic Processing Research
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• 제13권spc1호
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• pp.128-131
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• 2012

The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multi-sliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and p-type metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.

• Nuclear Engineering and Technology
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• 제55권6호
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• pp.2166-2171
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• 2023

In the present study, six silicone rubber doped by tellurium borate oxides were fabricated using the casting method. The densities of the fabricated silicon rubber-doped by tellurium borate oxides samples were measured using the Archimedes Method. Moreover, the linear attenuation coefficient of silicone rubber doped tellurium borate oxides samples was evaluated experimentally using the hyper pure germanium, and the recorded linear attenuation coefficient values were affirmed using the theoretical Phy-X program. The experimental measurements were performed using the narrow beam transmission method with radioactive isotopes Am-241, Cs-137, and Co-60 with energies of 59, 661, 1173, and 1332 keV. The linear attenuation coefficient values showed an enhancement by 4.73 times, 1.20 time, 1.17, time, and 1.17 time, respectively at gamma photon energies of 59, 661, 1173, and 1332 keV, when the TeO₂ concentration increased in the fabricated composites from 0 to 50 wt%. The enhancement of the linear attenuation coefficient values has a positive effect on the transmission rate values where the half-value thickness and transmission rate were decreased accompanied by an increase in the RPE.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.50.1-50.1
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• 2007

• 한국결정학회:학술대회논문집
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• 한국결정학회 2007년도 추계학술연구발표회 및 정기총회
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• pp.49-49
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• 2007

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제24회 학술발표회 초록집
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• pp.121-121
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• 2003

• 한국자기학회지
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• 제26권2호
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• pp.39-44
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• 2016

대표적 열전물질인 비스무스 텔루라이드에 자성원자를 도핑한 합금에 대한 구조 및 전자적 그리고 자기적 성질에 관한 연구는 고효율 열전물질의 개발이라는 목적뿐만 아니라 특이한 자기적 상호작용 규명 및 위상절연체 분야에서도 큰 관심을 끌고 있다. 본 연구에서는 희토류 원자로서 매우 국소화된 f 전자를 갖는 Gd이 Bi을 치환하여 도핑된 비스무스 텔루라이드 합금의 자성 안정성을 밀도범함수(Density Functional Theory)에 입각하여 제일원리적으로 연구하기 위하여 모든 전자(all-electron) FLAPW(full-potential linearized augmented plane-wave) 방법을 이용하여 전자구조 계산을 수행하였다. 전자간 교환-상관 상호작용은 일반기울기 근사법(Generalized Gradient Approximation)을 도입하여 계산하였으며, 국소화된 f 전자를 기술하는 데 필요한 Hubbard+U 보정과 스핀-궤도 각운동량 상호작용은 제2 변분법적 방법을 이용하여 고려하였다. 계산 결과, 강자성 안정성을 보이는 Gd 덩치계와 다르게 이 합금은 강자성과 반강자성의 총에너지 차이가 ~1 meV/Gd 정도의 아주 작은 값으로 얻어져서, 그 자성 안정성은 결함이나 strain 등에 의한 구조변화에 민감하게 의존하여 변할 수 있음을 알 수 있었다. 특히 Gd 스핀자기모멘트는 덩치에서의 값에 비해 감소하였고, Gd에 가장 가까운 Te에 유도 자기모멘트가 형성되는 것으로 미루어 Te를 매개로 한 자성상호작용이 자성 안정성을 결정하는 데에 중요한 역할을 하는 것으로 예측할 수 있었다.

• Current Photovoltaic Research
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• 제5권1호
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• pp.1-8
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• 2017

Two different fluorine-doped tin oxide (FTO)-coated glass substrates were investigated to find better suitability for CdTe solar cells. Substrate A consisted of FTO (300 nm)/$SiO_2$ (24 nm)/intrinsic $SnO_2$ (30 nm)/borosilicate glass (2.2 mm), and substrate B consisted of FTO (700 nm)/intrinsic $SnO_2$ (30nm)/borosilicate glass (1.8 mm). The overall thickness of the FTO/glass substrates was about 2.5 mm. The total light transmittance of substrate B was much higher than that of substrate A throughout the whole spectral region, even though the thickness of the FTO in substrate B was twice larger than that of the FTO in the substrate A. The short-circuit current greatly increased in substrate B and the external quantum efficiency (EQE) increased over the whole wavelength range. This study shows that the diffuse optical transmittance played a key role in the large EQE value in the blue wavelength region, and the direct transmittance played a key role in the large EQE value in the red wavelength region. The higher transmittance is due to the rough surface generated by the thicker FTO on glass. The conversion efficiency of the CdTe solar cell increased from 12.4 to 15.1% in combination of rough FTO substrate and Cu solution back contact.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.355-359
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• 2013

In this paper, the $0.995(Li_{0.04}(Na_{0.56}K_{0.44})_{0.96}(Nb_{0.90}Ta_{0.10})_{0.998}Zn_{0.005}O_3+0.005KNbO_3+xwt%\;TeO_2$ lead-free piezoelectric ceramics for energy harvesting devices were fabricated by the conventional mixed oxide method. The microstructure, dielectric, and piezoelectric properties were investigated as a function of the $TeO_2$ addition. All the specimens showed an orthorhombic phase structure. At the composition ceramics doped with 0.1 wt%$TeO_2$, the optimum values of $d_{33}$= 212 pC/N, $d_{33}{\cdot}g_{33}=9.54pm^2/N$, and kp=0.448 were obtained, respectively. The results indicate that the composition ceramics is a promising candidate for energy harvesting devices applications.

• 한국세라믹학회지
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• 제52권2호
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• pp.103-107
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• 2015

The effective glass frit composition used to absorb laser energy and to seal commercial dye-sensitized solar cell panel substrates has been previously developed using $V_2O_5-TeO_2$-based glass with 10 wt% ${\beta}$-eucryptite as a CTE controlling filler. The optimum sealing conditions are provided using a 3 mm beam, a laser power of 40 watt, a scan speed of 300 mm/s, and 200 irradiation cycles. In this study, the feasibility of the developed glass frit is investigated in terms of the sealing strength and chemical durability against the commercial iodide/triiodide electrolyte solution and fluorine-doped tin oxide (FTO) electrode in order to increase the solar cell lifetime. The sealing strength of the laser-sealed $V_2O_5-TeO_2$-based glass frit is $20.5{\pm}1.7MPa$, which is higher than those of thermally sealed glass frit and other reported glass frit. Furthermore, the developed glass frit is chemically stable against electrolyte solutions. The glass frit constituents are not leached out from the glass after soaking in the electrolyte solution for up to three months. During the laser sealing, the glass frit does not react with the FTO electrode; thus, the resistivity of the FTO electrode beneath the laser-sealed area remains the same.