• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.241-241
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• 2014

$SnO_2-core/Zn-shell$ heteronanowires were fabricated by a two-step process: thermal evaporation of Sn powders and employing a sputtering technique with a Zn target. X-ray diffraction, high-resolution transmission electron microscopy, and EDX spectra coincidentally indicated that the shell layer comprised the Zn phase. From Gaussian deconvolution studies, we observed that photoluminescence (PL) spectra consisted of yellow, green, and ultraviolet (UV) emission bands, regardless of shell-coating. We speculated the possible mechanisms of these emission peaks.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.357-360
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• 1996

MgO protection layer in ac PDP(plasma display panel) prevents the dielectric layer from ion bombarding in discharge plasma. The MgO layer also has the additional important role in lowering the firing voltage due to a large secondary electron emission coefficient. Until now, the MgO protection layer is mainly prepared by E-beam evaporation. In this study, MgO protection layer is prepared on dielectric layer of ac PDP cell by reactive R.F magnetron sputtering with Mg target under various conditions of oxygen partial pressure. Discharge characteristics of PDP is also studied as a parameter of MgO preparation conditions. The sputtered MgO shows the better discharge characteristics compared with MgO deposited by E-beam evaporator.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1840-1842
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• 1997

MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large $\gamma$-Coefficients. Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore in this study. MgO protection layer is prepared on dielectric layer by R.F. magnetron sputtering with Mg target under various conditions. The sputtered MgO shows the better discharge characteristics compared with MgO deposited by E-beam evaporatior.

• Corrosion Science and Technology
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• 제3권4호
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• pp.148-153
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• 2004

Magnesium thin flims were prepared on cold-rolled steel substrates by RF magnetron sputtering technique. The influence of argon gas pressure and substrate bias voltage on their crystal orientation and morphology of the coated films were investigated by scanning electron microscopy (SEM) and X-ray diffraction, respectively. And the effect of crystal orientation and morphology of magnesium films on corrosion behaviors was estimated by measuring anodic polarization curves in deaerated 3%NaCl solution. From the experimental results, all the sputtered magnesium films showed obviously good corrosion resistance to compare with 99.99% magnesium target of the sputter-evaporation metal. Finally it was shown that the Corrosion-resistance of magnesium films can be improved greatly by controlling the crystal orientation and morphology with effective use of the plasma sputtering technique.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.432-435
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• 1997

In AC PDP, electrodes are covered with dielectric layer and the discharge is formed on the surface of the dielectric layer. MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large secondary electron emission yield( ${\gamma}$ ). Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore, in this study, MgO protection layer is prepared on dielectric layer by reactive R.F. magnetron sputtering with MgO target. Discharge characteristics and secondary electron emission coefficients of PDP are studied as a parameter of preparation conditions. Discharge voltage characteristics of the prepared MgO layer can be stable and improved by the annealing process in vacuum chamber.

• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.23-27
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• 2010

We prepared Al doped ZnO thin film as a top electrode on a glass substrate with a deposited $Alq_3$ for the top emission organic Light emitting device (TEOLED) with facing target sputtering (FTS) method and radio-frequency (RF) sputtering method, respectively. Before the deposition of AZO thin film, we evaporated the $Alq_3$ on glass substrate by thermal evaporation. And we evaluated the damage of organic layer. As a result, PL intensity of $Alq_3$ on grown by FTS method showed higher than that of grown by RF sputtering method, so we found that the FTS showed the lower damage sputtering than RF sputtering. Therefore, we can expect the FTS method is promising the low-damage sputtering system that can be used as a direct sputtering on the organic layer.

• 한국수소및신에너지학회논문집
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• 제34권6호
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• pp.650-656
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• 2023

In order to efficiently control boil-off rate of a liquefied hydrogen tank, the important thing is to maintain an appropriate vacuum level. however, compared to small and medium-sized storage tank, it is very difficult to create and maintain vacuum in large-capacity storage tanks. In this study, we aim to determine the target level of future large-capacity storage tank technology development and secure basic data on performance test methods by analyzing the corelation between evaporation gas and thermal conductivity of liquefied hydrogen storage tanks.

• 한국광학회지
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• 제22권4호
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• pp.198-203
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• 2011

본 논문에서는 국소화된 플라스몬 필드 내에 분자를 동시국소화 시키는 방법으로 플라스몬 센서의 감도를 향상시키기 위한 이론적 연구를 수행하였다. 플라스몬 필드의 국소화는 나노격자를 통하여 이루어 졌으며, 측정하고자 하는 분자 반응은 유전체 박막의 기울임 증착을 통하여 국소화되는 것으로 가정하였다. 근접장 기반의 필드와 분자 분포 간의 중복적분 값을 통하여 중복도가 플라스몬 센서의 감도와 밀접한 관련이 있는 것을 확인하였으며, 계산된 플라스몬 센서 특성에 근거하여 동시국소화된 플라스몬 센서의 경우, 동시국소화되지 않은 경우에 비하여, 10배 정도의 감도개선 효과가 있는 것을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.202-203
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• 2006

In the AC PDP, the MgO film is used as electrode protective film. This film must provide excellent ion bombardment protection, high secondary electron emission, and should be high transparent to visible radiation. In this study, we investigated the relations between the crystal orientation and e-beam evaporation process parameters. The crystal orientation of the MgO layer depends on the conditions of deposition. The parameters are the thickness of the MgO film $1000{\AA}-6500{\AA}$, the deposition rate $200{\AA}/min{\sim}440{\AA}/min$, the temperature $150^{\circ}C{\sim}250^{\circ}C$, and the distance between crucible and substrate 11cm ${\sim}$ 14cm. The temperature of substrate and evaporation rate of source material, or deposition rate of the film, are definitely related to the crystal orientation of the MgO thin film. The crystal orientation can be changed by the distance between the target(MgO tablet) and the substrate. However, the crystal orientation is not much affected by the thickness of MgO thin film.

• 한국재료학회지
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• 제18권2호
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.